Patents Assigned to Tohoku University
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Publication number: 20120148441Abstract: The zirconium content of the alloy composition of a copper alloy wire is 3.0 to 7.0 atomic percent; and the copper alloy wire includes copper matrix phases and composite phases composed of copper-zirconium compound phases and copper phases. The copper matrix phases and the composite phases form a matrix phase-composite phase fibrous structure and are arranged alternately parallel to an axial direction as viewed in a cross-section parallel to the axial direction and including a central axis. The copper-zirconium compound phases and the copper phases in the composite phases also form a composite phase inner fibrous structure and are arranged alternately parallel to the axial direction at a phase pitch of 50 nm or less as viewed in the above cross-section. This double fibrous structure presumably makes the copper alloy wire densely fibrous to provide a strengthening mechanism similar to the rule of mixture for fiber-reinforced composite materials.Type: ApplicationFiled: September 13, 2010Publication date: June 14, 2012Applicants: Tohoku University, NGK Insulators, Ltd.Inventors: Naokuni Muramatsu, Hisamichi Kimura, Akihisa Inoue
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Patent number: 8199278Abstract: Surface light source device includes: point light sources (13); light guide plate (1) having (i) two end parts in length direction, one of which serves as incident surface (2), and (ii) two end parts in thickness direction which serve as exit surface (7) and back surface (8), light guide plate (1) directing light, emitted from point light sources (13), incident on incident surface (2), so as to cause light to exit from substantially entire area of exit surface (7); and reflector (14) which reflects, toward incident surface (2), part of light which is emitted from point light sources (13) and is then reflected from incident surface (2). Incident surface (2) has elliptic arc (10) which is concave part having surface shape along elliptic arc identical to elliptic arc which is part of ellipse (31) having two focal points corresponding to point light sources (13) and reflector (14).Type: GrantFiled: August 4, 2009Date of Patent: June 12, 2012Assignees: Sharp Kabushiki Kaisha, Tohoku UniversityInventors: Tatsuo Uchida, Yoshito Suzuki, Tohru Kawakami, Takahiro Ishinabe, Baku Katagiri, Yoshihiro Hashimoto, Shoichi Ishihara, Shuichi Kozaki, Yutaka Ishii
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Patent number: 8191235Abstract: The method of the present invention provides a magnetoresistance effect element, which is capable of having a high MR ratio, corresponding to high density recording and being suitably applied to a magnetoresistance device even though a barrier layer is thinned to reduce resistance of the magnetoresistance effect element. The method of producing the magnetoresistance effect element, which includes the barrier layer composed of an oxidized metal, a first magnetic layer contacting one of surfaces of the barrier layer and a second magnetic layer contacting the other surface thereof, comprises the steps of: laminating the barrier layer on the first magnetic layer with using a target composed of the oxidized metal; and laminating the second magnetic layer on the barrier layer. The barrier layer is annealed before laminating the second magnetic layer thereon.Type: GrantFiled: December 19, 2008Date of Patent: June 5, 2012Assignees: Fujitsu Limited, Tohoku UniversityInventors: Migaku Takahashi, Masakiyo Tsunoda, Koujiro Komagaki, Yuji Uehara, Kazuyuki Sunaga
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Patent number: 8193642Abstract: This invention provides an interlayer insulating film for a semiconductor device, which has low permittivity, is free from the evolution of gas such as CFx and SiF4 and is stable, and a wiring structure comprising the same. In an interlayer insulating film comprising an insulating film provided on a substrate layer, the interlayer insulating film has an effective permittivity of not more than 3. The wiring structure comprises an interlayer insulating film, a contact hole provided in the interlayer insulating film, and a metal filled into the contact hole. The insulating film comprises a first fluorocarbon film provided on the substrate layer and a second fluorocarbon film provided on the first fluorocarbon film.Type: GrantFiled: June 20, 2006Date of Patent: June 5, 2012Assignees: Tohoku University, Foundation for Advancement of International ScienceInventor: Tadahiro Ohmi
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Patent number: 8188468Abstract: An organometal material gas is supplied into a low electron temperature and high density plasma excited by microwaves to form a thin film of a compound on a substrate as a film forming object. In this case, the temperature of a supply system for the organometal material gas is controlled by taking advantage of the relationship between the vapor pressure and temperature of the organometal material gas.Type: GrantFiled: May 2, 2008Date of Patent: May 29, 2012Assignees: National University Corporation Tohoku University, Rohm Co., Ltd., Tokyo Electron Limited, Ube Industries, Ltd.Inventors: Tadahiro Ohmi, Hirokazu Asahara, Atsutoshi Inokuchi, Kohei Watanuki
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Patent number: 8188372Abstract: A flex-rigid printed wiring board is provided which can retain flexibility of a flexible portion while increasing durability of the flexible portion against folding, and can ensure conduction in a rigid portion, and a method of manufacturing the printed wiring board. The flex-rigid printed wiring board includes a conductor layer provided on at least one face of a base film, one region of the wiring board containing the base film being a rigid region, an another region containing the base film being a flexible region. The average thickness “tf” of the conductor layer on the base film formed in the flexible region and the average thickness “tR” of the conductor layer on the base film formed in the rigid region satisfy the relationship of tf<tR.Type: GrantFiled: September 21, 2006Date of Patent: May 29, 2012Assignees: Daisho Denshi Co., Ltd., Tohoku UniversityInventors: Akihiro Sato, Masahiro Sasaki, Tadahiro Ohmi, Akihiro Morimoto
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Patent number: 8184191Abstract: A solid-state imaging device includes a plurality of pixels stored in one-dimensional or two-dimensional array, each of the plurality of pixels including a photodiode receiving light and producing photocharges, an overflow gate coupled to the photodiode and transferring photocharges that overflow the photodiode during a storage operation, and a storage capacitor element that stores the photocharges transferred by the overflow gate during the storage operation.Type: GrantFiled: August 9, 2006Date of Patent: May 22, 2012Assignee: Tohoku UniversityInventors: Shigetoshi Sugawa, Nana Akahane, Satoru Adachi
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Patent number: 8178727Abstract: It has been demanded to improve the poor solubility of curcumin to develop an anti-tumor compound capable of inhibiting the growth of various cancer cells at a low concentration. Thus, disclosed is a novel synthetic compound, a bis(arylmethylidene)acetone, which has both of an excellent anti-tumor activity and a chemo-preventive activity. A bis(arylmethylidene)acetone (i.e., a derivative having a curcumin skeleton) which is an anti-tumor compound and has a chemo-preventive activity is synthesized and screened. A derivative having enhanced anti-tumor activity and chemo-preventive activity can be synthesized.Type: GrantFiled: June 27, 2006Date of Patent: May 15, 2012Assignee: National University Corporation Tohoku UniversityInventors: Hiroyuki Shibata, Yoshiharu Iwabuchi, Hisatsugu Ohori, Hiroyuki Yamakoshi, Yuichi Kakudo
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Publication number: 20120111394Abstract: It is an object of the present invention to provide a photoelectric conversion device having a passivation layer suitable for a structure provided with a heat dissipation mechanism. A photoelectric conversion device 1 of the present invention has a first electrode layer 20, a single power generation laminate 22 having a nip structure formed of a-Si (amorphous silicon), and a second electrode layer 26 of Al formed on the power generation laminate 22 through a nickel layer 24. On the second electrode layer 26, a passivation layer 28 constructed of a material containing SiCN is formed. On the passivation layer 28, a heat sink 30 (for example, formed of Al) is mounted through an adhesive layer 29.Type: ApplicationFiled: July 26, 2010Publication date: May 10, 2012Applicant: National University Corporation Tohoku UniversityInventor: Tadahiro Ohmi
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Patent number: 8175692Abstract: An electrocardiogram signal processing method and device for extracting a fetus electrocardiogram signal included in a biopotential signal detected from an electrode attached to a mother's body is provided.Type: GrantFiled: December 22, 2005Date of Patent: May 8, 2012Assignee: Tohoku UniversityInventors: Yoshitaka Kimura, Mitsuyuki Nakao, Shinichi Chida, Kunihiro Okamura, Michiyoshi Sato, Takuya Ito, Takayuki Shimazaki, Junichi Sugawara, Masato Senoo
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Patent number: 8173487Abstract: A thin-film transistor (1) of the present invention includes an insulating substrate (2), a gate electrode (3) which has a predetermined shape and is formed on the insulating substrate (2), a gate insulating film (4) formed on the gate electrode (3), and a semiconductor layer (5) which is polycrystalline ZnO and is formed on the gate insulating film (4). The semiconductor layer (5) is immersed in a solution in which impurities are dissolved so that the impurities are selectively added to a grain boundary part of the polycrystalline ZnO film. Subsequently, a source electrode (6) and a drain electrode (7) are formed so as to have a predetermined shape. Next, a protection layer (8) is formed on the source electrode (6) and the drain electrode (7). Thus, a thin-film transistor which has a good subthreshold characteristic and has a zinc oxide film as a base of an active layer can be realized.Type: GrantFiled: April 1, 2008Date of Patent: May 8, 2012Assignees: Sharp Kabushiki Kaisha, Tohoku UniversityInventors: Masao Urayama, Masashi Kawasaki, Hideo Ohno
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Publication number: 20120099610Abstract: A laser diode assembly includes: a mode-locked laser diode device; a diffraction grating that configures an external resonator, returns primary or more order diffracted light to the mode-locked laser diode device, and outputs 0-order diffracted light outside; and an imaging section provided between the mode-locked laser diode device and the diffraction grating and imaging an image of a light output end face of the mode-locked laser diode device on the diffraction grating.Type: ApplicationFiled: October 6, 2011Publication date: April 26, 2012Applicants: Tohoku University, SONY CORPORATIONInventors: Shunsuke Kono, Hiroyuki Yokoyama, Masaru Kuramoto, Tomoyuki Oki
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Patent number: 8155395Abstract: An iris authentication apparatus includes an iris area extraction unit, registration pattern generating unit, collation pattern generating unit, and collation unit. The iris area extraction unit extracts iris areas from a sensed registration eyeball image and a sensed collation eyeball image. When the iris area extraction unit extracts an iris area from the registration eyeball image, the registration pattern generating unit generates a registration iris pattern image by performing polar coordinate transformation of an image in the extracted iris area. When the iris area extraction unit extracts an iris area from the collation eyeball image, the collation pattern generating unit generates a collation iris pattern image by performing polar coordinate transformation of an image in the extracted iris area.Type: GrantFiled: July 28, 2006Date of Patent: April 10, 2012Assignees: Yamatake Corporation, National University Corporation Tohoku UniversityInventors: Koji Kobayashi, Atsushi Katsumata, Hiroshi Nakajima, Kazuyuki Miyazawa, Koichi Ito, Takafumi Aoki
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Patent number: 8146924Abstract: A low-compression force metal gasket includes a coating layer containing a polymer material on at least a sealing surface of the gasket, and the coating layer satisfies the following conditions (1) to (3): (1) the layer comprises a resin, a rubber or a mixture thereof having an oxygen gas permeability coefficient at 25° C. of 10×10?12 to 0.1×10?12 (m2/s); (2) when the layer is compression deformed, the storage elastic modulus (E?) at 200° C. is in the range of 1.0×107 to 1.0×102 Pa; and (3) the coating layer has a thickness of 1 to 40 ?m. The gasket provides a high seal at a low clamping force.Type: GrantFiled: June 11, 2008Date of Patent: April 3, 2012Assignees: Tohoku University, Nippon Valqua Industries, Ltd.Inventors: Tadahiro Ohmi, Yasuyuki Shirai, Yasushi Aburatani, Akira Muramatsu, Masayuki Noguchi, Kouji Sato, Satoshi Kumaki
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Publication number: 20120074339Abstract: [Problem] To provide a regulating valve device having a valve element opened or closed by a working fluid. [Solution to Problem] A valve element 310 has a structure in which a valve head 310a and a valve body 310b are coupled by a valve stem 310c. In the valve box 305, the valve element 310 and a power transmitting member 320a are slidably housed. A first bellows 320b is fixed to the power transmitting member 320a and the valve box 305 to form a first space Us at a position on a side of the power transmitting member 320a opposite the valve element. A second bellows 320c is fixed to the power transmitting member 320a and the valve box 305 to form a second space Ls at a position on a side of the power transmitting member 320a closer to the valve element.Type: ApplicationFiled: March 8, 2010Publication date: March 29, 2012Applicants: Fujikin Incorporated, Tohoku University, Tokyo Electron LimitedInventors: Nobukazu Ikeda, Michio Yamaji, Tsuyoshi Tanigawa, Hiroshi Kaneko, Yasushi Yagi, Yuji Ono, Tadahiro Ohmi, Yasuyuki Shirai
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Patent number: 8137825Abstract: In a method of manufacturing an aluminum nitride single crystal film on a substrate by heating a sapphire substrate in the presence of carbon, nitrogen and carbon monoxide, an aluminum compound which differs from the raw material sapphire substrate and the formed aluminum nitride single crystal and can control the concentration of aluminum in the heating atmosphere, such as aluminum nitride or alumina, is made existent in a reaction system to promote a reduction nitriding reaction. An aluminum nitride single crystal multi-layer substrate having an aluminum nitride single crystal film on the surface of a sapphire substrate, wherein the aluminum nitride single crystal has improved crystallinity and a low density of defects, is provided.Type: GrantFiled: August 1, 2006Date of Patent: March 20, 2012Assignees: Tokuyama Corporation, Tohoku UniversityInventors: Hiroyuki Fukuyama, Kazuya Takada, Akira Hakomori
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Patent number: 8138527Abstract: An accumulation mode transistor has an impurity concentration of a semiconductor layer in a channel region at a value higher than 2×1017 cm?3 to achieve a large gate voltage swing.Type: GrantFiled: July 12, 2007Date of Patent: March 20, 2012Assignees: National University Corporation Tohoku University, Foundation For Advancement of International ScienceInventors: Tadahiro Ohmi, Akinobu Teramoto, Rihito Kuroda
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Patent number: 8137297Abstract: An elastic metal strip aligning a longitudinal direction with a rolling direction of a cold-rolled plate is collected and processed to a shape including a correction plate with the longitudinal direction of the elastic metal as a width direction of a nail and a plurality of tongue strips protruded from the edge of the correction plate near the nail tip. Each tongue strip is folded and bent to form a hooked claw with a double structure of a folding part and a bending part. A nail tip of a deformed nail is inserted between the hooked claw and the correction plate to apply a restoring force of elasticity in the correction plate to the deformed nail as correction ability for deformed nails. A wrought wire rod can be used instead of a cold-rolled plate and a Cu—Al—Mn type shape-memory alloy may further be used as a raw material.Type: GrantFiled: December 20, 2006Date of Patent: March 20, 2012Assignee: Tohoku UniversityInventors: Kiyohito Ishida, Kiyoshi Yamauchi, Ryosuke Kainuma, Yuji Sutou, Toshihiro Omori, Akira Ogawa
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Patent number: 8134376Abstract: In a method for measuring an electronic device which is an object to be measured, a passive element is connected to the electronic device in parallel, and electric parameters of the electronic device are extracted by measuring an impedance of the entire circuit.Type: GrantFiled: January 17, 2006Date of Patent: March 13, 2012Assignee: Tohoku UniversityInventors: Tadahiro Ohmi, Akinobu Teramoto
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Patent number: 8130340Abstract: A large liquid crystal display (100) comprises a light guide plate (3) arranged on the back side of a liquid crystal panel (1). The front surface of the light guide plate (3) is flat, while the back surface thereof is concave. The upper and lower end faces of the light guide plate (3) respectively facing hot cathode fluorescent lamps (2a, 2b) have a convex shape projecting toward the respective lamps. White light from the fluorescent lamps is incident on the upper and lower end faces of the light guide plate directly or by being reflected by reflectors (4a, 4b), and propagates within the light guide plate while being reflected by the front and back surfaces of the light guide plate. At the front surface of the light guide plate, a part of the white light is directed toward the back side of the liquid crystal panel (1) by a light guide portion (5).Type: GrantFiled: August 14, 2006Date of Patent: March 6, 2012Assignees: Tohoku University, Kuraray Co., Ltd., Sharp CorporationInventors: Tadahiro Ohmi, Yasuyuki Shirai, Kiwamu Takehisa, Mitsuo Matsumoto, Tokuo Ikari, Toshiaki Sato, Ikuo Onishi, Etsuo Nakazato, Yuichiro Yamada, Tokihiko Shinomiya, Takashi Ishizumi, Yuhsaku Ajichi