Abstract: The invention provides a perpendicular recording medium with high recording density, and a magnetic recording and reproducing apparatus, by improving the function of magnetic anisotropy of a soft magnetic underlayer. The perpendicular recording medium has at least a soft magnetic underlayer and a perpendicular magnetic recording layer on a non-magnetic substrate, wherein when Ku? (erg/cm3) is defined as a perpendicular magnetic anisotropic energy, and Ms (emu/cm 3) is defined as a saturation magnetization of the soft magnetic underlayer, Ku? of the soft magnetic underlayer has a negative value and Ku?<?2?Ms2. As a result, the easy axis of a magnetization of a soft magnetic underlayer is oriented strongly in the substrate surface plane, which is effective to suppress the WATE phenomena and spike noise.
Abstract: There is provided a wafer on which a plurality of electronic devices and circuits under test are to be formed, where each circuit under test includes a plurality of transistors under measurement provided in electrically parallel, a selecting section which sequentially selects the respective transistors under measurement, and an output section which sequentially outputs the source voltages of the transistors under measurement sequentially selected by the selecting section.
Type:
Grant
Filed:
September 19, 2007
Date of Patent:
January 4, 2011
Assignee:
National University Corporation Tohoku University
Abstract: For equalizing the rising and falling operating speeds in a CMOS circuit, it is necessary to make the areas of a p-type MOS transistor and an n-type MOS transistor different from each other due to a difference in carrier mobility therebetween. This area unbalance prevents an improvement in integration degree of semiconductor devices. The NMOS transistor and the PMOS transistor each have a three-dimensional structure with a channel region on both the (100) plane and the (110) plane so that the areas of the channel regions and gate insulating films of both transistors are equal to each other. Accordingly, it is possible to make the areas of the gate insulating films and so on equal to each other and also to make the gate capacitances equal to each other. Further, the integration degree on a substrate can be improved twice as much as that in the conventional technique.
Type:
Grant
Filed:
December 20, 2006
Date of Patent:
January 4, 2011
Assignees:
Tohoku University, Foundation for Advancement of International Science
Abstract: According to one embodiment, a multilayered underlayer including a first underlayer containing Cu aligned in a (111) plane and a second underlayer formed on the Cu underlayer and containing Cu and nitrogen as main components is formed.
Abstract: Provided is a method for managing manufacturing apparatuses used in a managed production line including a plurality of manufacturing processes for manufacturing an electronic device, each of the apparatuses being used in one or more of the processes. The method includes acquiring a property of a reference device manufactured in a predetermined reference production line including the manufacturing processes to be performed, performing at least one of the manufacturing processes in the managed production line, performing the other manufacturing processes in the reference production line, and manufacturing a comparison device. The method further includes measuring a property of the comparison device, comparing the measured properties of the reference and the comparison devices, and judging whether a manufacturing apparatus used in the at least one manufacturing process in the managed production line is defective or not, based on a property difference between the reference and the comparison devices.
Type:
Grant
Filed:
March 25, 2008
Date of Patent:
December 7, 2010
Assignees:
National University Corporation Tohoku University, Advantest Corporation
Abstract: A manufacture method that can manufacture ZnO based compound semiconductor crystal of good quality. A ZnO substrate is prepared to have a principal surface made of a plurality of terraces of (0001) planes arranged stepwise along an m-axis direction, the envelop of the principal surface being inclined relative to the (0001) plane by about 2 degrees or less. ZnO based compound semiconductor crystal is grown on the principal surface.
Type:
Grant
Filed:
September 27, 2008
Date of Patent:
November 9, 2010
Assignees:
Stanley Electric Co., Ltd., Tokyo Denpa Co., Ltd., Tohoku University
Abstract: The object of the present invention is to provide a method of preparing excellent cultured muscle cells having high metabolic capacity and insulin responsiveness, and further provide a method for the measurement of sensitive metabolic capacity using the cells. The present invention is a method of preparing myotube cells, comprising a step (1) of culturing myoblast cells, a step (2) of differentiation-inducing the myotube cells into the myoblast cells in a culture medium with a high content of amino acids, and a step (3) of applying an electric pulse to the differentiation-induced myotube cells.
Abstract: An information recording apparatus comprises a plurality of fine particles forming an array on a plane in close proximity of each other, each of the plural particles including a ferromagnetic metal, a light-emitting device for exciting a near-field light, and a photo-electric conversion element for detecting a near-field light traveled along the fine particles.
Abstract: A film with small hysteresis and high voltage resistance is obtained by reducing the carbon content in a gate insulating film on a SiC substrate. Specifically, the carbon content in the gate insulating film is set to 1×1020 atoms/cm3 or less. For this, using a plasma processing apparatus, a silicon oxide film is formed on the SiC substrate and then the formed silicon oxide film is reformed by exposure to radicals containing nitrogen atoms. Thus, the gate insulating film excellent in electrical properties is obtained.
Type:
Grant
Filed:
June 21, 2007
Date of Patent:
October 26, 2010
Assignees:
Tohoku University, Foundation for Advancement of International Science
Abstract: A process for producing a nonvolatile semiconductor memory having a mixed or laminated structure of a hardly oxidizable material composed of a hardly oxidizable element having Gibbs' free energy for forming oxide higher than that of Si under the same temperature condition at 1 atm and in temperature range of 0° C. to 1,200° C. and an oxide of an easily oxidizable material composed of an element having Gibbs' free energy for forming oxide lower than that of Si under the same temperature condition at 1 atm in the temperature range and Si. The process includes forming a portion of the hardly oxidizable material and a portion of the oxide by physical forming method and carrying out heat treatment in oxidizing and reducing gas mixture. The ratio of the gases and the temperature are controlled so that the hardly oxidizable material is reduced and the oxide is oxidized in the temperature range.
Type:
Grant
Filed:
March 12, 2008
Date of Patent:
October 26, 2010
Assignees:
Asahi Glass Company, Limited, Tohoku University
Abstract: A solid-state imaging device, a line sensor and an optical sensor for enhancing a wide dynamic range while keeping high sensitivity with a high S/N ratio, and a method of operating a solid-state imaging device for enhancing a wide dynamic range while keeping high sensitivity with a high S/N ratio are provided. The solid-state imaging device comprises an integrated array of a plurality of pixels, each of which comprises a photodiode PD for receiving light and generating photoelectric charges, a transfer transistor Tr1 for transferring the photoelectric charges, and a storage capacitor element C connected to the photodiode PD at least through the transfer transistor Tr1 for accumulating, at least through the transfer transistor Tr1, the photoelectric charge overflowing from the photodiode PD during accumulating operation.
Type:
Grant
Filed:
March 4, 2009
Date of Patent:
October 26, 2010
Assignee:
National University Corporation Tohoku University
Abstract: A copper interconnection structure includes an insulating layer, an interconnection and a barrier layer. The insulating layer includes silicon (element symbol: Si), carbon (element symbol: C), hydrogen (element symbol: H) and oxygen (element symbol: O). The interconnection is located on the insulating layer, and the interconnection includes copper (element symbol: Cu). The barrier layer is located between the insulating layer and the interconnection. The barrier layer includes an additional element, carbon (element symbol: C) and hydrogen (element symbol: H). The barrier layer has atomic concentrations of carbon (element symbol: C) and hydrogen (element symbol: H) maximized in a region of a thickness of the barrier layer where the atomic concentration of the additional element is maximized.
Type:
Application
Filed:
June 24, 2010
Publication date:
October 21, 2010
Applicants:
Advanced Interconnect Materials, LLC, Tohoku University
Abstract: A method for activating an efferent sympathetic nerve innervating an adipose tissue and improving obesity-associated symptoms is provided, comprising stimulating an afferent vagal nerve from the liver without directly enhancing peroxisome proliferator-activated receptor (PPAR)-?2 function in the liver.
Type:
Grant
Filed:
May 21, 2007
Date of Patent:
October 19, 2010
Assignee:
Tohoku University
Inventors:
Hideki Katagiri, Yoshitomo Oka, Tetsuya Yamada, Kenji Uno
Abstract: A permeability measurement apparatus includes a magnetic field generation means applying an alternating magnetic field having a predetermined frequency to a magnetic substance to be measured; a probe needle placed in proximity or in contact to a microscopic area of the magnetic substance to be measured to which the alternating magnetic field is applied; a resonator including a coil wound on the probe needle, and generating a magnetic field having a resonant frequency higher than the frequency of the alternating magnetic field applied on the microscopic area having the probe needle in proximity or in contact thereto, and having an inductance of the coil varied as permeability in the microscopic area varies; and a measurement means measuring the permeability of the microscopic area of the magnetic substance to be measured based on the variation of the resonant frequency of the resonator according to the variation of the coil inductance.
Abstract: There is provided a device identifying method for identifying an electronic device including therein an actual operation circuit and a test circuit having a plurality of test elements provided therein, where the actual operation circuit operates during an actual operation of the electronic device and the test circuit operates during a test of the electronic device.
Type:
Grant
Filed:
February 18, 2008
Date of Patent:
October 12, 2010
Assignees:
National University Corporation Tohoku University, Advantest Corporation
Abstract: Because AK022567 has angiogenesis inhibitory activity, it is useful as an angiogenesis inhibitor. Furthermore, 4 splicing variants obtained from the same gene are also useful as an angiogenesis inhibitor. These 5 polypeptides, polynucleotides encoding the polypeptides and antibodies against the polypeptides are useful for screening of a candidate compound as an angiogenesis inhibitor or promoter. A compound obtained from the screening is useful as a medicine and can be used for a preventive or therapeutic agent for an angiogenesis related disease.
Type:
Application
Filed:
February 8, 2010
Publication date:
October 7, 2010
Applicants:
Shionogi & Co., Ltd., Tohoku University
Abstract: A nonvolatile solid state magnetic memory with a ultra-low power consumption and a recording method thereof, the memory including a magnetic material having a magnetic anisotropy that can be changed by increasing or decreasing a carrier concentration, wherein a direction of an easy axis of magnetization, in which the magnetization is oriented easily, is controlled by increasing or decreasing the carrier concentration. The nonvolatile solid state magnetic memory including a recording layer of a magnetic material, and a recording method thereof, in which a carrier (electron or hole) concentration in the recording layer is increased and/or decreased, whereby the magnetization is rotated or reversed and the recording operation is performed.
Type:
Application
Filed:
October 3, 2008
Publication date:
September 30, 2010
Applicants:
Tohoku University, JAPAN SCIENCE AND TECHNOLOGY AGENCY
Abstract: A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.
Abstract: A first and a second static-pressure gas bearings supporting a rod at two locations in the axial direction in the non-contact manner are provided, in which the first static-pressure gas bearing is fixedly supported by a bearing housing, while the second static-pressure gas bearing is supported capable of displacement through a movable support mechanism. And this movable support mechanism has an actuator and suppresses contact of the rod with the static-pressure gas bearings by displacing the shaft center of the second static-pressure gas bearing with respect to the first static-pressure gas bearing by this actuator according to a load acting on the rod.
Abstract: An excavation technique for a stratum capable of excavating a submerged stratum such as a layer containing an underground resource by using laser irradiation in liquid is provided. In this technique, a laser beam transmitted through laser transmission means 20 is irradiated in liquid 90 in form of a laser beam having a wavelength with high absorptance of the liquid 90 by laser-induced bubble generation means 35, generating a bubble flow 36, thus excavation of a submerged stratum may be carried out by using a laser-induced destruction effect. Moreover, a laser beam 41 having low absorptance of the liquid 90 is irradiated by laser irradiation means 39 and passed through the bubble flow 36, thereby applying a thermal effect to a stratum to destroy rock and excavate the stratum. The destruction effect and the thermal effect also may be cooperatively worked.
Type:
Grant
Filed:
March 16, 2006
Date of Patent:
September 28, 2010
Assignees:
Japan Drilling Co., Ltd., Tohoku University, National University Corporation the University of Electro-Communications