Abstract: A scintillator for neutron detection, comprising a metal fluoride crystal containing, as constituent elements, a metal having a valence of 2 or higher, such as calcium, aluminum or yttrium; lithium; and fluorine, the metal fluoride crystal containing 1.1 to 20 atoms per unit volume (atoms/nm3) of 6Li, having an effective atomic number of 10 to 40, containing a lanthanoid such as cerium, praseodymium or europium, and being represented by, for instance, LiCaAlF6, LiSrAlF6 and LiYF4. The scintillator for neutron detection has high sensitivity to neutron rays, and is reduced in a background noise attributed to ? rays.

Abstract: There is provided a semiconductor device formed of a highly integrated high-speed CMOS inverter coupling circuit using SGTs provided on at least two stages. A semiconductor device according to the present invention is formed of a CMOS inverter coupling circuit in which n (n is two or above) CMOS inverters are coupled with each other, each of the n inverters has: a pMOS SGT; an nMOS SGT, an input terminal arranged so as to connect a gate of the pMOS SGT with a gate of the nMOS SGT; an output terminal arranged to connect a drain diffusion layer of the pMOS SGT with a drain diffusion layer of the nMOS SGT in an island-shaped semiconductor lower layer; a pMOS SGT power supply wiring line arranged on a source diffusion layer of the pMOS SGT; and an nMOS SGT power supply wiring line arranged on a source diffusion layer of the NMOS SGT, and an n?1th output terminal is connected with an nth input terminal.

Abstract: A lighting device includes: a light guide plate; a light source disposed on a side face of the light guide plate; and a light modulation element disposed on a surface or in the inside of the light guide plate and adhered to the light guide plate. The light modulation element has a pair of transparent substrates disposed separately and oppositely, a pair of electrodes provided on respective surfaces of the pair of transparent substrates, and a light modulation layer provided in a gap between the pair of transparent substrates. The light modulation layer includes a first region, having optical anisotropy, responsive to an electric field, and a second region, having optical anisotropy, unresponsive to an electric field. The second region has a striped structure with average striped texture size of 0.05 ?m to 10 ?m both inclusive in a short axis direction.

Abstract: In a perpendicular magnetic recording medium in which at least a soft magnetic underlayer, an orientation control layer, a magnetic recording layer and a protective layer are formed on a non-magnetic substrate in order from the bottom, the orientation control layer has a laminated structure of two or more layers including an intermediate layer and a seed layer which is disposed closer to the non-magnetic substrate than the intermediate layer. The seed layer includes two or more kinds of elements having a face-centered cubic structure, has face-centered cubic (111) plane crystals oriented in a direction perpendicular to a substrate surface, and has a pseudo-hexagonal structure.

Abstract: The present invention provides a magnetic recording medium which is capable of improving the perpendicular orientation of a perpendicular magnetic recording layer while maintaining a writing performance during recording and obtaining both an improvement in the perpendicular orientation and fine magnetic crystal particles with a uniform diameter, and which enables information to be recorded or reproduced at high density, a method of manufacturing the same, and a magnetic recording/reproducing apparatus. A magnetic recording medium 10 according to the present invention includes at least a soft magnetic underlayer 2, an orientation control layer 3, a magnetic recording layer 4, and a protective layer 5 formed on a non-magnetic substrate 1. The orientation control layer 3 has a seed layer 6 and an intermediate layer 7. The seed layer 6 is made of a Cu—Ti alloy that has a face-centered cubic structure and includes Cu as a main component.

Abstract: A lighting device includes: a light guide plate; a light source; and a light modulation element disposed on a surface of or in the inside of the light guide plate, and adhered to the light guide plate. The light modulation element has a pair of transparent substrates, a first electrode provided on a surface of one of the transparent substrates, a second electrode provided on a surface of the other of the transparent substrates, and a light modulation layer, provided in a gap between the transparent substrates, exhibiting a light-scattering property or a light-transmitting property concerning light from the light source depending on intensity of an electric field. One or both of the first and second electrodes include partial electrodes. First partial electrodes of the partial electrodes are adjacent to second partial electrodes of the partial electrodes, and have irregular shapes on edges adjacent to the second partial electrodes.

Abstract: A pellet 4 for use in spectrometry includes a first powder 41 of a light transmitting material in a compression-molded form, and a second powder 42 which is hydrophilic and water-insoluble and is dispersedly mixed in the first powder. A sample 40 to be subjected to spectrometry is e.g. in a powdery form and dispersedly mixed in the first and the second powders 41 and 42. When the sample 40 is a hydrate, the second powder 42 exerts the effect of accelerating dehydration of the sample 40, so that stable spectrum data on the sample in the dehydrated state is obtained early. This makes it possible to perform a processing such as identification of the sample 40 early and precisely.

Abstract: Disclosed are: a compound which can be produced through a chemical synthesis at low cost, has an excellent osteogenesis-promoting activity, has high affinity for a bone, and can be applied without the need of any special DDS; and a method for promoting osteogenesis by administering the compound and applying the promotion of osteogenesis to the formation or regeneration of a bone. Specifically disclosed are: an osteogenesis promoter or a pharmaceutical composition comprising [4-(methylthio)phenylthio]methanebisphosphonic acid, which is one of bisphosphonic acids, or a pharmaceutically acceptable salt thereof as an active ingredient; and a method for promoting osteogenesis, which comprises administering the osteogenesis promoter or the pharmaceutical composition to a subject to be treated.

Abstract: Transformed cells are efficiently selected using a mutant ALS gene having high specificity to PC herbicides. The transformation method comprises the steps of: transforming a host cell with a recombination vector containing a gene of interest and a gene coding for a mutant acetolactate synthase having mutation of glycine corresponds to position 95 of the amino acid sequence of a wild-type acetolactate synthase derived from rice to alanine; culturing the transformed cell obtained in the former step in the presence of a pyrimidinyl carboxy herbicide; and wherein the gene coding for the mutant acetolactate synthase is used as a selection marker.

Abstract: In manufacturing processes of a semiconductor device including a shallow trench element isolation region and an interlayer insulating film of a multilayer structure, it is necessary to repeatedly use CMP, but since the CMP itself is costly, the repeated use of the CMP is a cause to increase the manufacturing cost. As an insulating film for use in a shallow trench (ST) element isolation region and/or a lowermost-layer interlayer insulating film, use is made of an insulating coating film that can be coated by spin coating. The insulating coating film has a composition expressed by ((CH3)nSiO2-n/2)x(SiO2)1-x(where n=1 to 3 and 0?x?1.0) and a film with a different relative permittivity k is formed by selecting heat treatment conditions. The STI element isolation region can be formed by modifying the insulating coating film completely to a SiO2 film, while the interlayer insulating film with a small relative permittivity k can be formed by converting it to a state not completely modified.

Abstract: A magnetic recording medium is provided, which has at least one soft magnetic layer, at least one seed layer, at least one underlayer and at least one perpendicular magnetic recording layer, and is characterized in that the or each seed layer is comprised of a covalently bonded material. The covalently bonded material preferably predominantly comprises a nitride having a hexagonal crystal structure, more preferably, predominantly comprises aluminum nitride having a hexagonal wurtzite crystal structure. This magnetic recording medium is superior in recording and reproducing an information with high density.

Abstract: A seed layer is formed on a surface of an insulating film and along a recess of the insulating film, and after a copper wiring is buried in the recess, a barrier film is formed, and an excessive metal is removed from the wiring. On a surface of a copper lower layer conductive path exposed at the bottom of the recess, a natural oxide of the copper is reduced or removed. On a substrate from which the natural oxide is reduced or removed, the seed layer, composed of a self-forming barrier metal having oxidative tendency higher than that of copper or an alloy of such metal and copper, is formed. The substrate is heated after burying copper in the recess. Thus, a barrier layer is formed by oxidizing the self-forming barrier metal. An excessive portion of the self-forming barrier metal is deposited on a surface of the buried copper.

Abstract: A system provides definitions of network states, and identifies a cause for the anomaly upon detection. A traffic measuring portion (characteristic quantity generating portion) counts the number of packets/time slot classified by traffic type with respect to network traffic, generating a characteristic quantity; a memory portion stores information about the characteristic quantity; a portion calculates correlation coefficients between each pair of characteristic quantities classified by traffic type; a portion generates a histogram from correlation coefficients; a portion for determining the severity of an anomaly based on the histogram; a portion evaluates the similarity of an anomaly of interest to a reference anomaly using the occurrence probabilities of correlation coefficients; and a portion assigns a color to each pixel according to its occurrence probability value, generating an n×n picture.

Abstract: The present invention relates to a magnetic thin film containing a L11 type Co—Pt—C alloy in which atoms are orderly arranged, and can realize an order degree excellent in regard to the L11 type Co—Pt—C alloy to achieve excellent magnetic anisotropy of the magnetic thin film. Therefore, in the various application devices using the magnetic thin film, it is possible to achieve a large capacity process and/or a high density process thereof in a high level.

Abstract: Disclosed is a method for cleaning a semiconductor substrate that can solve a problem of a conventional cleaning method which should include at least five steps for cleaning a substrate such as a semiconductor substrate. The method for cleaning a semiconductor substrate comprises a first step of cleaning a substrate with ultrapure water containing ozone, a second step of cleaning the substrate with ultrapure water containing a surfactant, and a third step of removing an organic compound derived from the surfactant, with a cleaning liquid containing ultrapure water and 2-propanol. After the third step, plasma of noble gas such as krypton is applied to the substrate to further remove the organic compound derived from the surfactant.

Abstract: A method of treating hydrogen sulfide or producing hydrogen which comprises disposing a liquid tank having a photocatalyst electrode comprising a photocatalyst and a liquid tank having a metal electrode so that the two liquid tanks are separated from each other by a cation-exchange membrane, placing a liquid containing either hydrogen sulfide or an organic substance in the liquid tank having the photocatalyst electrode, electrically connecting the photocatalyst electrode to the metal electrode, and exposing the photocatalyst to a light. The liquid to be placed in the liquid tank having the metal electrode preferably is an acidic solution. The photocatalyst preferably comprises a metal sulfide, and preferably is fine particles having a layered nanocapsule structure.

Abstract: Provided is an Al alloy member with an excellent mechanical strength that is sufficient for use in large-scale manufacturing apparatuses. The Al alloy member is characterized in that, in mass %, Mg concentration is 5.0% or less, Ce concentration is 15% or less, Zr concentration is 0.15% or less, the balance comprises Al and unavoidable impurities, the elements of the unavoidable impurities are respectively 0.01% or less, and the Vickers hardness of the Al alloy member is greater than 30.

Abstract: A bonding apparatus including a chamber for maintaining an inert gas atmosphere; a first plasma torch for performing a surface treatment on pads and electrodes, the first plasma torch being attached in the chamber, to apply gas plasma to a substrate and a semiconductor chip that is placed inside the chamber; a second plasma torch for performing a surface treatment on an initial ball and/or wire at a tip end of a capillary that is positioned inside the chamber, the second plasma torch being attached in the chamber, to apply gas plasma to the initial ball and/or wire; and a bonding unit for bonding the surface-treated initial ball and/or wire to the surface-treated pads and electrodes in the chamber, thereby cleaning of the surface of the electrodes and pads as well as the wire can be effectively performed.

Abstract: A gas or an insulating material having a relative dielectric constant of not more than 2.5 on average is interposed between a first wiring layer and a second wiring layer included in a multilayer wiring structure. Between a wiring of the first wiring layer and a wiring of the second wiring layer, a conductive connector is arranged. Between a predetermined wiring of the first wiring layer and a predetermined wiring of the second wiring layer, an insulating heat conductor having a relative dielectric constant of not more than 5 is arranged.

Abstract: A nitriding process is performed at a process temperature of 500° C. or more by causing microwave-excited high-density plasma of a nitrogen-containing gas to act on silicon in the surface of a target object, inside a process container of a plasma processing apparatus. The plasma is generated by supplying microwaves into the process container from a planar antenna having a plurality of slots.