Patents Assigned to Xilinx, Inc.
  • Patent number: 7890916
    Abstract: Various approaches for controlling a circuit implemented on an integrated circuit device having programmable logic. According to one approach a hierarchy of directories and files are maintained in a virtual file system that is registered with an operating system. The directories and files are associated with resources of the programmable logic. Each file represents a respective data set of configuration data for an associated one of the resources, and at least one of the files is a clock control file that is associated with a clock control circuit on the integrated circuit. A first value is stored in the clock control circuit of the programmable logic in response to invocation of an operating system file access command that references the clock control file and specifies the first value. Advancement of a clock signal on the programmable logic is controlled in response to the first value stored in the clock control circuit.
    Type: Grant
    Filed: March 25, 2008
    Date of Patent: February 15, 2011
    Assignee: Xilinx, Inc.
    Inventors: Adam P. Donlin, Brandon J. Blodget, Paul M. Hartke, Patrick Lysaght, Hayden Kwok-Hay So
  • Patent number: 7888202
    Abstract: A method and apparatus for reducing parasitic capacitance. A P-well blocked layer is formed directly beneath a parasitic device. The P-well blocked layer significantly increases the resistance underneath the parasitic device. The resistance of the P-well blocked layer, in effect, partially disconnects the parasitic device from the ground terminal to minimize the effective capacitive impedance that is added to the total termination impedance.
    Type: Grant
    Filed: September 14, 2009
    Date of Patent: February 15, 2011
    Assignee: Xilinx, Inc.
    Inventors: Firas N. Abughazaleh, Brian T. Brunn
  • Patent number: 7888771
    Abstract: An electronic fuse (“E-fuse”) has a silicide filament link extending along a gap between polysilicon structures formed on a silicon substrate. The silicide filament link extends across diffusions formed in the gap. A P-N junction between terminals of the E-fuse provides high resistivity after programming (fusing) the silicide filament link.
    Type: Grant
    Filed: May 2, 2007
    Date of Patent: February 15, 2011
    Assignee: Xilinx, Inc.
    Inventors: Lakhbeer Singh Sidhu, Srikanth Sundararajan, Michael J. Hart
  • Patent number: 7888143
    Abstract: An apparatus and method of utilizing an electron beam and ion beam microscope in combination with nanomanipulators to improve the accuracy of the characterization of structures within an integrated circuit. Probes attached to the nanomanipulators, i.e., nano-probes, are applied to the features of interest via a first trench, while physical dimensions of the features of interest are altered via a second trench. As such, the nano-probes may remain attached to the feature being characterized, while alteration of the feature is conducted from the second trench to obtain 3-dimensional characterization of the feature of interest with improved accuracy. The nano-probes may also be used to apply the test stimulus to the features of interest, or conversely, an electron beam microscope may be used.
    Type: Grant
    Filed: July 30, 2008
    Date of Patent: February 15, 2011
    Assignee: Xilinx, Inc.
    Inventors: Fergal W. Keating, Cathal N. McAuley
  • Patent number: 7888954
    Abstract: A method and apparatus is provided to facilitate testing of integrated circuits using an interposer to be utilized in conjunction with an automated test equipment (ATE) system that includes a device handler and a device tester. The interposer may be utilized to convert overall device under test (DUT) board pitches to accommodate various device handler pitch orientations, or conversely, the interposer may be utilized in conjunction with a single DUT board to convert the footprint of the DUT board to accommodate multiple device package footprints. The interposer may also be used to convert a DUT board exhibiting a first single/multi-site orientation to a converted DUT board that exhibits a second single/multi-site orientation. The interposer may be composed of an elastomeric material having multiple conductive columns distributed throughout the elastomeric material or may be composed of a more rigid material such as a Pogo® pin array or printed circuit board.
    Type: Grant
    Filed: September 18, 2008
    Date of Patent: February 15, 2011
    Assignee: Xilinx, Inc.
    Inventor: Mohsen H. Mardi
  • Patent number: 7890917
    Abstract: Method and apparatus for providing secure intellectual property (IP) cores for a programmable logic device (PLD) are described. An aspect of the invention relates to a method of securely distributing an IP core for PLDs. A circuit design is generated for the IP core, the circuit design being re-locatable in a programmable fabric for PLDs. The circuit design is encoded to produce at least one partial configuration bitstream. Implementation data is generated for utilizing the IP core as a reconfigurable module in top-level circuit designs. The at least one partial configuration bitstream and the implementation data are delivered to users of the PLDs.
    Type: Grant
    Filed: January 14, 2008
    Date of Patent: February 15, 2011
    Assignee: Xilinx, Inc.
    Inventors: Jay T. Young, Jeffrey M. Mason
  • Patent number: 7885320
    Abstract: A device and a method for processing high data rate serial data includes circuitry for recovering a clock based on the high data rate input data stream and for providing the recovered clock to a circuit portion, for example, a portion of a field programmable gate array fabric, to enable the circuit portion to use either a reference clock or the recovered clock for subsequent processing. The invention specifically allows for different circuitry portions to utilize different clocks, including different recovered clocks, for corresponding functions that are being performed. Applications for the present invention are many but include multi-gigabit transceiver, switching devices, and protocol translation devices. More generally, the device and method provide for application specific clock references to be utilized in order to minimize or eliminate timing mismatch in serial data processing.
    Type: Grant
    Filed: September 11, 2003
    Date of Patent: February 8, 2011
    Assignee: XILINX, Inc.
    Inventors: Eric D. Groen, Charles W. Boecker, William C. Black, Scott A. Irwin, Joseph Neil Kryzak
  • Patent number: 7886256
    Abstract: Approaches for determining a static timing analysis of a logic design are disclosed. Physical delay arcs of a plurality of physical elements of an integrated circuit specify respective propagation delays from inputs of the physical elements to outputs of the physical elements. Logic components of the logic design are mapped to selected ones of the physical components of the physical elements. For each of the logic components, the logic delay arcs are determined from the physical delay arcs. Each logic delay arc for each logic component specifies a propagation delay from an input of the logic component to an output of the logic component. A static timing analysis of the logic components is performed using the logic delay arc, and data from the timing analysis is output.
    Type: Grant
    Filed: June 26, 2008
    Date of Patent: February 8, 2011
    Assignee: Xilinx, Inc.
    Inventors: Pradip Kumar Jha, Dinesh D. Gaitonde, Yau-Tsun Steven Li
  • Publication number: 20110026173
    Abstract: Enhanced electrostatic discharge (“ESD”) protection for an integrated circuit is described. An embodiment relates generally to a circuit for protection against ESD. The circuit has an input/output node and a driver. The driver has a first transistor and a second transistor. A first source/drain node of the first transistor is coupled to the input/output node. A second source/drain node of the first transistor forms a first interior node capable of accumulating charge when electrically floating. A first current flow control circuit is coupled to a discharge node and the second source/drain node of the first transistor. The first current flow control circuit is electrically oriented in a bias direction for allowing accumulated charge to discharge from the first interior node via the first current flow control circuit to the discharge node.
    Type: Application
    Filed: July 30, 2009
    Publication date: February 3, 2011
    Applicant: XILINX, INC.
    Inventor: James Karp
  • Patent number: 7882484
    Abstract: A method of creating a design-specific I/O model document can include reading a plurality of I/O pin models corresponding to available I/O pin profiles on a target device (355) and identifying I/O pins of the target device that are used by a circuit design (325). An I/O pin profile for each I/O pin of the target device that is used by the circuit design can be determined (345). An I/O pin model can be selected from the plurality of I/O pin models for each I/O pin of the target device that is used by the circuit design according to the I/O pin profiles (355). The design-specific I/O model document for the circuit design can be generated by including each selected I/O pin model within the design-specific I/O model document (365). The design-specific I/O model document can be output (380).
    Type: Grant
    Filed: March 21, 2008
    Date of Patent: February 1, 2011
    Assignee: Xilinx, Inc.
    Inventors: Jennifer D. Baldwin, Paul Cheng, Philippe Garrault, Hari Devanath
  • Patent number: 7880265
    Abstract: A packaged integrated circuit includes an integrated circuit and a package substrate. A trace in the package substrate includes a first portion and a second, high-inductance, portion. The high-inductance portion of the trace is proximate to a port of the integrated circuit and provides a selected inductance operating in cooperation with the capacitance of the port to reduce return loss from the port. The first portion of the trace is part of a transmission line having a characteristic impedance.
    Type: Grant
    Filed: October 12, 2007
    Date of Patent: February 1, 2011
    Assignee: Xilinx, Inc.
    Inventors: Soon-Shin Chee, Ann Chiuchin Lin
  • Patent number: 7881320
    Abstract: Multiplexing data from bitstreams is described. Data status is determined for data of each of the bitstreams. Stream numbers are assigned respectively to the bitstreams, and the data of each of the bitstreams is controllably stored in respective memory. A memory buffer of the memory buffers is controllably selected. The data obtained from the memory buffer selected is parsed to provide an output. The controllably selecting and the parsing are repeated to obtain and parse the data stored in at least one other memory buffer of the memory buffers to provide the output. The output is multiplexed data from the bitstreams respectively associated with the memory buffer and the at least one other memory buffer.
    Type: Grant
    Filed: December 12, 2005
    Date of Patent: February 1, 2011
    Assignee: Xilinx, Inc.
    Inventors: Paul R. Schumacher, Kornelis Antonius Vissers
  • Patent number: 7882165
    Abstract: A digital signal processing circuit including: a multiplier circuit; a plurality of multiplexers coupled to the multiplier circuit and controlled by a first opcode; and an arithmetic logic unit coupled to plurality of multiplexers and controlled by a second opcode.
    Type: Grant
    Filed: April 21, 2006
    Date of Patent: February 1, 2011
    Assignee: Xilinx, Inc.
    Inventors: James M. Simkins, Jennifer Wong, Bernard J. New, Alvin Y. Ching, John M. Thendean, Anna Wing Wah Wong, Vasisht Mantra Vadi, David P. Schultz
  • Patent number: 7875543
    Abstract: Recesses are formed in the drain and source regions of an MOS transistor. An ohmic contact layer is formed in the recesses, and a stressed silicon-nitride layer is formed over the ohmic contact layer. The recesses allow the stressed silicon nitride layer to provide strain in the plane of the channel region. In a particular embodiment, a tensile silicon nitride layer is formed over recesses of an NMOS transistor in a CMOS cell, and a compressive silicon nitride layer is formed over recesses of a PMOS transistor in the CMOS cell. In a particular embodiment the stressed silicon nitride layer(s) is a chemical etch stop layer.
    Type: Grant
    Filed: August 28, 2008
    Date of Patent: January 25, 2011
    Assignee: Xilinx, Inc.
    Inventors: Yuhao Luo, Deepak Kumar Nayak
  • Publication number: 20110012633
    Abstract: An integrated circuit device is described that includes a stacked die and a base die having probe pads that directly couple to test logic of the base die so as to implement a scan chain for testing of the integrated circuit device. The base die further includes contacts disposed on a back side of the base die and through-die vias coupled to the contacts and coupled to programmable logic of the base die. In addition, the base die includes a first probe pad configured to couple test input, a second probe pad configured to couple test output and a third probe pad configured to couple control signals. Test logic of the base die is configured to couple to additional test logic of the stacked die so as to implement a scan chain for testing of the integrated circuit device.
    Type: Application
    Filed: July 17, 2009
    Publication date: January 20, 2011
    Applicant: XILINX, INC.
    Inventors: Arifur Rahman, Hong-Tsz Pan, Bang-Thu Nguyen
  • Patent number: 7873931
    Abstract: A computer-implemented method of incorporating probe points within a circuit design for implementation within an integrated circuit device can include routing probe nets of the circuit design in an overlap mode, identifying a plurality of probe net routes including a common overlapping portion, and including a switch at each location within the circuit design where at least two probe net routes of the plurality of probe net routes diverge from a common point. The circuit design can be output.
    Type: Grant
    Filed: March 21, 2008
    Date of Patent: January 18, 2011
    Assignee: Xilinx, Inc.
    Inventor: Adam P. Donlin
  • Patent number: 7873927
    Abstract: A method of partitioning a design across a plurality of integrated circuits can include creating a software construct for each one of the plurality of integrated circuits and assigning a plurality of instances to a selected software construct. Each of the plurality of instances can be from a different logic hierarchy. The method further can include automatically adding at least one input/output buffer and port to the selected software construct to accommodate the plurality of instances and creating nets connecting the plurality of instances and the at least one input/output buffer and port within the selected software construct.
    Type: Grant
    Filed: April 3, 2008
    Date of Patent: January 18, 2011
    Assignee: Xilinx, Inc.
    Inventors: David A. Knol, Abhishek Ranjan, Salil Ravindra Raje
  • Patent number: 7872495
    Abstract: A unit cell for a programmable termination circuit in an integrated circuit and a method for programming such termination circuit are described. In an embodiment, such unit cells may have three n-type and three p-type transistors. A first transistor is coupled to receive a first float control signal. A second transistor is coupled to receive a second float control signal. The third and fourth transistors are coupled to receive a first termination voltage control signal. The fifth and sixth transistors are coupled to receive a second termination voltage control signal. The first float control signal and the second float control signal are a pair of complementary signals.
    Type: Grant
    Filed: January 28, 2010
    Date of Patent: January 18, 2011
    Assignee: Xilinx, Inc.
    Inventors: Toan D. Tran, Cheng H. Hsieh, Mark J. Marlett
  • Patent number: 7872346
    Abstract: An IC package includes an IC die mounted on a substrate that includes an ESD protection structure formed within the substrate to dissipate any charge accumulation associated with the package's no-connect pins resulting from human body model ESD and/or voltage spikes during package testing. For some embodiments, the ESD protection structure includes a resistive element formed in the substrate between the no-connect pin and a power plane. For other embodiments, the ESD protection structure includes a conductive ring formed in the substrate and laterally surrounding the land pad of the no-connect pin.
    Type: Grant
    Filed: December 3, 2007
    Date of Patent: January 18, 2011
    Assignee: Xilinx, Inc.
    Inventors: Soon Shin Chee, Eugene O'Rourke
  • Patent number: 7869452
    Abstract: A FIFO communication system is provided using a FIFO and connection circuit to transmit data from a single source to multiple sinks. The connection circuit operates to enable simultaneous reads by the multiple sinks with a single output port FIFO. Multiple FIFOs can likewise be used to distribute data from a single source to multiple sinks without requiring a simultaneous read by both sinks. Similarly, a multiple output port FIFO can be used to supply multiple sinks without requiring simultaneous reads and without requiring additional memory use.
    Type: Grant
    Filed: July 19, 2007
    Date of Patent: January 11, 2011
    Assignee: Xilinx, Inc.
    Inventor: Stephen A. Neuendorffer