Abstract: A network appliance, and a system and user interface therefor, are described. The network appliance includes a file capture module is to obtain files transmitted via a network and to load data from the files into a database. A user interface for communicating with the server includes a first set of fields and a second set of fields. The first set of fields are for selecting data from the database and the second set of fields are for selecting indices for charting the data selected with the first set of fields. A data processing module is configured to retrieve data from the database responsive to the data selected with the first set of fields, to chart the data retrieved responsive to the indices selected with the second set of fields, and to output a graph of the data charted to a server having access to the database.

Abstract: A data storage system 400 includes a first circuit board 401, a plurality of sockets 402 coupled to the first circuit board 401, an connector 403 coupled to each of the sockets 402 for coupling each of the sockets 402 to external circuitry, and a plurality of memory modules 100, each memory module 100 disposed within one of the sockets 402. The memory module 100 includes a circuit board 101, an integrated circuit device 130 having configurable logic, DRAM devices 120-129 that form parallel channels of DRAM memory and flash memory devices 140-160 that form parallel channels of flash memory. The memory module 100 also includes an interface 170 electrically coupled to the integrated circuit device 130 for coupling input and output between the integrated circuit device 130 and external circuitry.

Abstract: Disclosed are processor-implemented methods for technology mapping a logic network onto programmable logic resources of a programmable logic device. The methods include determining respective Boolean flexibility values for a plurality of functionally equivalent mappings of the logic network onto the programmable logic resources, selecting one of the mappings as a function of the respective Boolean flexibility values, and storing the selected mapping.

Abstract: Method and apparatus for mapping flip-flop logic onto shift register logic is described. In one example, a method of processing flip-flop logic in a circuit design for implementation in an integrated circuit is provided. A chain of flip-flops in the circuit design is identified. The chain of flip-flops includes first and second control signals. A shift register is instantiated in a logical description of the circuit design for the chain of flip-flops. A shift register is instantiated in the logical description for the chain of flip-flops. First and second control chains of flip-flops are instantiated in the logical description for the first and second control signals, respectively. A multiplexer is instantiated in the logical description and is configured to select among an output of the shift register, an asserted logic state, and a de-asserted logic state based on outputs of the first and second control chains.

Abstract: A voltage regulator for supplying power to volatile memory cells during a suspend mode of an integrated circuit is described. The integrated circuit in an awake mode generates a regulated voltage at an output node using a first supply voltage and in the suspend mode generates the regulated voltage at the output node using a second supply voltage, at less voltage than the first supply voltage. The second supply voltage is electrically decoupled from the output node for transitioning from the suspend mode to the awake mode, and the first supply voltage is electrically decoupled from the output node for transitioning from the awake mode to the suspend mode.

Abstract: Methods of estimating delays between pins on a tile-based programmable logic device (PLD), by identifying repeat patterns and exploiting these patterns to provide accurate delay estimates. A computer-implemented method can include selecting a sample area in a tile-based PLD and constructing a delay table corresponding to the sample area. Each entry in the delay table includes a base delay value and a description of the fastest available route from a source pin in a source tile to a load pin in the sample area. To estimate a net delay, the base delay value and the description of the route are read from the delay table for specified source and load pins. One or more delay variants (e.g., pin delays and/or crossing penalties) are calculated based on the description of the route. The calculated delay variants are added to the base delay value to obtain an adjusted delay value, which is output.

Abstract: An exemplary circuit for implementing conditional statements in self-timed logic circuits includes first and second logic circuits, an input circuit, an output circuit, and a pipelined routing path. The first and second logic circuits each have a self-timed input and a self-timed output. The input circuit is coupled to provide a self-timed input signal to the self-timed input of a selected one of the first or second logic circuits based on the value of a control signal, and is further coupled to output a self-timed select signal. The output circuit is coupled to receive the self-timed output from the first logic circuit and the self-timed output from the second logic circuit, and to output a selected one of the self-timed outputs based on a value of the self-timed select signal. The pipelined routing path routes the self-timed select signal from the input circuit to the output circuit.

Abstract: A method for forming a stacked-die structure is disclosed in which a buried oxide layer is formed in a semiconductor wafer. Device layers and metal layers are formed on the face side of the semiconductor wafer, defining dice, with each die including an interconnect region. Openings are etched in the interconnect regions that extend through the semiconductor wafer so as to expose portions of the buried oxide layer. Conductive material is deposited within the openings so as to form through-die vias. The semiconductor wafer is then attached to a wafer support structure and material is removed from the backside of the semiconductor wafer so as to form an oxide layer having a thickness that is less than the initial thickness of the buried oxide layer.

Abstract: A test setup is provided to test differential signals outputs from the I/O block (IOB) pairs in an integrated circuit (IC). The test setup allows elimination of the external 100 Ohm resistors provided across the differential outputs on a device under test (DUT) test board containing the IC by taking advantage of a 100 Ohm resistor built into the IC between a portion of the IOB pairs. An IOB pair being tested may have its differential output terminal pair shorted to the differential output terminal pair of the IOBs having the internal 100 Ohm resistor.

Abstract: A method and apparatus to reduce the degradation in performance of semiconductor-based devices due to process, voltage, and temperature (PVT) and/or other causes of variation. Adaptive feedback mechanisms are employed to sense and correct performance degradation, while simultaneously facilitating configurability within integrated circuits (ICs) such as programmable logic devices (PLDs). A voltage-feedback mechanism is employed to detect PVT variation and mirrored current references are adaptively adjusted to track and substantially eliminate the PVT variation. More than one voltage-feedback mechanism may instead be utilized to detect PVT-based variations within a differential device, whereby a first voltage-feedback mechanism is utilized to detect common-mode voltage variation and a second voltage-feedback mechanism produces mirrored reference currents to substantially remove the common-mode voltage variation and facilitate symmetrical operation of the differential device.

Abstract: A high-speed interface for implementation in a programmable device such as, e.g., a programmable logic device (“PLD”) is described. Multi-gigabit transceivers of the PLD provide transmit and receive lock signals and have inputs for reference transmit and receive clock signals. One of the multi-gigabit transceivers provides a first transmit clock signal, a first receive clock signal, and a second receive clock signal. A data rate converter fractionally multiplies a second transmit clock signal to provide the reference transmit clock signal. A skew synchronization block obtains respective transmit and receive lock signals from the multi-gigabit transceivers and provides respective receive and transmit synch adjustment signals to the multi-gigabit transceivers. Synchronous operation of the multi-gigabit transceivers in receive and transmit directions is adjusted with receive and transmit synch adjustment signals to maintain lane-to-lane skew for the high-speed interface within a target range.

Abstract: A programmable delay line includes a first oscillator that is enabled and generates a plurality of clock cycles of a clock signal in response to a transition of the input signal. A first programmable ripple counter is coupled to the first oscillator, counts with each successive clock cycle to a programmed count, and generates a first signal in response to reaching the programmed count. A control circuit is coupled to the first oscillator and to the first programmable ripple counter. The control circuit transitions the output signal and disables the first oscillator in response to the first signal.

Abstract: Command translation of burst commands is described. A slave processor local bus (“PLB”) bridge, part of a processor block core embedded in a host IC, has a data size threshold to allow access to a crossbar switch device. A master device, coupled to the slave PLB bridge, has any of a plurality of command bus widths. A burst command is issued via a command bus, having a command bus width of the plurality, from the master device for the slave PLB bridge. The burst command is converted to a native bus width of the slave processor logic block if the command bus width is not equal to the native bus width. The burst command is translated if execution of the burst command will exceed the data size threshold and passed without the translating if the execution of the burst command will not exceed the data size threshold.

Abstract: A shared memory switch is provided for storing and retrieving data from BlockRAM (BRAM) memory of a PLD. A set of class queues maintain a group of pointers that show the location of the incoming “cells” or “packets” stored in the memory in the switch based on the time of storage in the BRAM. A non-blocking memory architecture is implemented that allows for a scalable N×N memory structure to be created (N=number of input and output ports). A write controller stripes the data across this N×N memory to prevent data collisions on read in or read out of data. The data is scheduled for read out of this N×N shared memory buffer based on priorities or classes in the class queues, with priorities being set by a user, and then data is read out from the BRAM.

Abstract: A capacitor in an integrated circuit (“IC”) has a distribution grid formed in a first patterned metal layer of the integrated circuit and a first vertical conductive filament connected to and extending away from the distribution grid along a first direction. A second vertical conductive filament is connected to the distribution grid and extends in the opposite direction. First and second grid plates are formed in the metal layers above and below the first patterned metal layer. The grid plates surround the first and second vertical conductive filaments. The distribution grid, first vertical conductive filament and second vertical conductive filament are connected to and form a portion of a first node of the capacitor and the first grid plate and the second grid plate are connected to and form a portion of a second node of the capacitor.

Abstract: A capacitor in an integrated circuit (“IC”) has a first node plate link formed in a first metal layer of the IC electrically connected to and forming a portion of a first node of the capacitor extending along a first axis (y) and a second node plate link formed in a second metal layer of the IC extending along the axis and connected to the first node plate with a via. A third node plate link formed in the first metal layer is electrically connected to and forming a portion of a second node of the capacitor and extends along a second axis (x) of the node plate array transverse to the first node plate link, proximate to an end of the first node plate link and overlying a portion of the second node plate link.

Abstract: A capacitor in an integrated circuit (“IC”) has a first node conductor formed in a first metal layer of the IC with a first spine extending along a first direction, a first vertical element extending from the first spine along a second direction perpendicular to the first direction. A first capital element extends along the first direction, and a first serif element extends from the capital element. The capacitor also has a second node conductor having a second spine, a second vertical element extending from the second spine toward the first spine, a second capital element, and a second serif element extending from the second capital between the first vertical element and the first serif element.

Abstract: A method of protecting a circuit design implemented within an integrated circuit (IC) from electrostatic discharge (ESD) can include positioning a device array pair comprising first and second device arrays on the IC to share a common centroid, wherein the first and second device arrays are matched. An ESD diode array pair comprising first and second ESD diode arrays can be positioned on the IC adjacent to a first perimeter encompassing the first and second device arrays, wherein the first and second ESD diode arrays share the common centroid and are matched. A cathode terminal of each ESD diode of the first ESD diode array can be coupled to an input of the first device array, and a cathode terminal of each ESD diode of the second ESD diode array can be coupled to an input of the second device array.

Abstract: A capacitor in an integrated circuit (“IC”) includes a core capacitor portion having first conductive elements electrically connected to and forming a part of a first node of the capacitor formed in a first layer and second conductive elements electrically connected to and forming a part of a second node of the capacitor formed in the first layer. The first and second conductive elements alternate in the first conductive layer. Third conductive elements electrically connected to and forming a part of the first node are formed in a second layer adjacent to the first layer. The capacitor also includes a shield capacitor portion having fourth conductive elements formed in at least first, second, third, and fourth layers. The shield capacitor portion is electrically connected to and forms a part of the second node of the capacitor and surrounds the first and third conductive elements.

Abstract: A capacitor in an integrated circuit (“IC”) has a first plurality of conductive crosses formed in a layer of the IC electrically connected to and forming a portion of a first node of the capacitor and a second plurality of conductive crosses formed in the metal layer of the IC. The conductive crosses in the second plurality of conductive crosses are electrically connected to and form a portion of a second node of the capacitor and capacitively couple to the first node.