Abstract: Integrated circuit structures having source or drain structures with vertical trenches are described. In an example, an integrated circuit structure includes a fin having a lower fin portion and an upper fin portion. A gate stack is over the upper fin portion of the fin, the gate stack having a first side opposite a second side. A first source or drain structure includes an epitaxial structure embedded in the fin at the first side of the gate stack. A second source or drain structure includes an epitaxial structure embedded in the fin at the second side of the gate stack. The epitaxial structures of the first and second source or drain structures have a vertical trench centered therein. The first and second source or drain structures include silicon and a Group V dopant impurity.

Abstract: Disclosed herein are structures and techniques for underfill flow management in electronic assemblies. For example, in some embodiments, an electronic assembly may include a first component, a second component, an underfill on the first component and at least partially between the first component and the second component, and a material at a surface of the first component, wherein the material is outside a footprint of the second component, and the underfill contacts the material with a contact angle greater than 50 degrees.

Abstract: Various systems and methods of establishing and utilizing device management (DM) services in Internet of Things (IoT) networks and similar distributed network architectures, are described. In an example, RESTful messaging within IoT operational and resource models are used to establish, instantiate, and operate DM services having various roles within an IoT framework abstraction.

Abstract: Multiple non-silicon semiconductor material layers may be stacked within a fin structure. The multiple non-silicon semiconductor material layers may include one or more layers that are suitable for P-type transistors. The multiple non-silicon semiconductor material layers may further include one or more one or more layers that are suited for N-type transistors. The multiple non-silicon semiconductor material layers may further include one or more intervening layers separating the N-type from the P-type layers. The intervening layers may be at least partially sacrificial, for example to allow one or more of a gate, source, or drain to wrap completely around a channel region of one or more of the N-type and P-type transistors.

Abstract: A sample and hold scheme for temperature measurements for non-volatile memory can enable significant reduction in temperature readout latency. In one example thermometer circuits are enabled at a refresh rate to cause the temperature to be sensed and latched at regular intervals. By performing the temperature readings in the background at a refresh rate instead of on-demand, the temperature is available to service commands with almost no latency.

Abstract: Apparatus, systems and methods for adaptively reducing blocking artifacts in block-coded video are disclosed. In one implementation, a system includes processing logic at least capable of deblock filtering at least a portion of a line of video data based, at least in part, on edge information and texture information to generate at least a portion of a line of deblocked video data, and an image data output device responsive to the processing logic.

Abstract: Methods, apparatus, systems and articles of manufacture are disclosed for electronic devices having multiple modes of operation. An example electronic device disclosed herein includes a display having a first rigid plate coupled to a first portion of the display, a second rigid plate coupled to a second portion of the display, and a flexible plate coupled to a third portion of the display, the flexible plate positioned between the first rigid plate and the second rigid plate. The device further includes a drive to move the display between a first physical configuration, a second physical configuration and a third physical configuration.

Abstract: An apparatus is provided which comprises: a substrate, a die site on the substrate to couple with a die, a die side component site on the substrate to couple with a die side component, and a raised barrier on the substrate between the die and die side component sites to contain underfill material disposed at the die site, wherein the raised barrier comprises electroplated metal. Other embodiments are also disclosed and claimed.

Abstract: Self-aligned gate endcap (SAGE) architectures having gate contacts, and methods of fabricating SAGE architectures having gate contacts, are described. In an example, an integrated circuit structure includes a gate structure over a semiconductor fin. A gate endcap isolation structure is laterally adjacent to and in contact with the gate structure. A trench contact structure is over the semiconductor fin, where the gate endcap isolation structure is laterally adjacent to and in contact with the trench contact structure. A local gate-to-contact interconnect is electrically connecting the gate structure to the trench contact structure.

Abstract: Embodiments disclosed herein comprise semiconductor devices with two dimensional (2D) semiconductor channels and methods of forming such devices. In an embodiment, the semiconductor device comprises a source contact and a drain contact. In an embodiment, a 2D semiconductor channel is between the source contact and the drain contact. In an embodiment, the 2D semiconductor channel is a shell.

Abstract: Embodiments are generally directed to graphics processor data access and sharing. An embodiment of an apparatus includes a circuit element to produce a result in processing of an application; a load-store unit to receive the result and generate pre-fetch information for a cache utilizing the result; and a prefetch generator to produce prefetch addresses based at least in part on the pre-fetch information; wherein the load-store unit is to receive software assistance for prefetching, and wherein generation of the pre-fetch information is based at least in part on the software assistance.

Abstract: A heat dissipation device may be formed having at least one isotropic thermally conductive section (uniformly high thermal conductivity in all directions) and at least one anisotropic thermally conductive section (high thermal conductivity in at least one direction and low thermal conductivity in at least one other direction). The heat dissipation device may be thermally coupled to a plurality of integrated circuit devices such that at least a portion of the isotropic thermally conductive section(s) and/or the anisotropic thermally conductive section(s) is positioned over at least one integrated circuit device.

Abstract: Disclosed embodiments relate to a new instruction for performing data-ready memory access operations.

Abstract: A processor includes a range register to store information that identifies a reserved range of memory associated with a secure arbitration mode (SEAM) and a core coupled to the range register. The core includes security logic to unlock the range register on a logical processor, of the processor core, that is to initiate the SEAM. The logical processor is to, via execution of the security logic, store, in the reserved range, a SEAM module and a manifest associated with the SEAM module, wherein the SEAM module supports execution of one or more trust domains; initialize a SEAM virtual machine control structure (VMCS) within the reserved range of the memory that is to control state transitions between a virtual machine monitor (VMM) and the SEAM module; and authenticate the SEAM module using a manifest signature of the manifest.

Abstract: Examples described herein relate to a graphics processing system that includes one or more integrated graphics systems and one or more discrete graphics systems. In some examples, an operating system (OS) or other software supports switching between image display data being provided from either an integrated graphics system or a discrete graphics system by configuring a multiplexer at runtime to output image data to a display. In some examples, a multiplexer is not used and interface supported messages are used to transfer image data from an integrated graphics system to a discrete graphics system and the discrete graphics system generates and outputs image data to a display. In some examples, interface supported messages are used to transfer image data from a discrete graphics system to an integrated graphics system and the integrated graphics system uses an overlay process to generate a composite image for output to a display.

Abstract: An apparatus for content based anti-aliasing is described herein. The apparatus comprises a detector, corrector, and downscaler. The detector is to detect potential aliased content in an input image, wherein the potentially aliased content occurs at a downscaled version of the input image. The corrector is to apply a correction to a single component of the input image. A downscaler may downscale the corrected input image to an output image according to a scaling factor.

Abstract: An apparatus to facilitate optimization of a convolutional neural network (CNN) is disclosed. The apparatus includes optimization logic to receive a CNN model having a list of instructions and including pruning logic to optimize the list of instructions by eliminating branches in the list of instructions that comprise a weight value of 0.

Abstract: An apparatus and method are described for utilizing volume proxies. For example, one embodiment of an apparatus comprises: a volume subdivision module to subdivide a volume into a plurality of partitions, the apparatus to process a first of the partitions and to distribute data associated with each of the other partitions to each of a plurality of nodes; a proxy generation module to compute a first proxy for the first partition, the first proxy to be transmitted to the plurality of nodes; and a ray tracing engine to perform one or more traversal/intersection operations for a current ray or group of rays using the first proxy; if the ray or group of rays interacts with the first proxy, then the ray tracing engine to send the ray(s) to a second node associated with the first proxy or retrieves data related to the interaction from the second node.

Abstract: An apparatus to facilitate thread scheduling is disclosed. The apparatus includes logic to store barrier usage data based on a magnitude of barrier messages in an application kernel and a scheduler to schedule execution of threads across a plurality of multiprocessors based on the barrier usage data.

Abstract: Embodiments described herein enable the offload of address calculations required to access a data element within an array of data elements from primary compute resources of a graphics processor to the memory access circuitry of the graphics processor. The memory access circuitry is configured to receive a message to access a data element of an array of data elements in the memory, the message to include an index of the data element in the array of data elements, calculate a byte address for the data element based in part on the index of the data element in the array of data elements, and submit a memory access request to the memory to access the data element at the byte address.

Abstract: An apparatus to facilitate disaggregated computing for a distributed confidential computing environment is disclosed. The apparatus includes one or more processors to facilitate receiving a manifest corresponding to graph nodes representing regions of memory of a remote client machine, the graph nodes corresponding to a command buffer and to associated data structures and kernels of the command buffer used to initialize a hardware accelerator and execute the kernels, and the manifest indicating a destination memory location of each of the graph nodes and dependencies of each of the graph nodes; identifying, based on the manifest, the command buffer and the associated data structures to copy to the host memory; identifying, based on the manifest, the kernels to copy to local memory of the hardware accelerator; and patching addresses in the command buffer copied to the host memory with updated addresses of corresponding locations in the host memory.

Abstract: Techniques are provided herein to form an integrated circuit having a grating pattern of gate cut structures such that a gate cut structure extends between the gate layers of adjacent semiconductor devices and between the source or drain regions (e.g., epitaxial regions) of the adjacent semiconductor devices. In an example, neighboring semiconductor devices each include a semiconductor region extending between a source region and a drain region, and a gate structure extending over the semiconductor regions of the neighboring semiconductor devices. In some such examples, a gate cut structure is present between each pair of neighboring semiconductor devices thus interrupting the gate structure and isolating the gate electrode of one semiconductor device from the gate electrode of the other semiconductor device. The gate cut structure further extends to separate the source or drain regions of the neighboring semiconductor devices.

Abstract: Described herein is a technique for automatic generation of optimized RTL via redundant code removal. By automatically introducing local mutations into the original RTL and using equivalence checking tools to confirm that the functionality it is not affected, optimized RTL can be produced automatically without requiring human intervention.

Abstract: An apparatus comprising first circuitry to process a request generated by a first device, the request specifying a memory address range of a second device to monitor for errors; and second circuitry to, based on a determination that a read request targets the memory address range of the second device, compare first data read from the second device with second data read from a memory to determine whether an error has occurred.

Abstract: Embodiments described herein provide a technique to merge partial cache line writes to a cache memory. One embodiment provides a graphics processor comprising a graphics core, a cache coupled with the graphics core, and memory access circuitry to process memory access messages received from the graphics core. The memory access circuitry includes partial cache line write merge circuitry configured to merge a first partial write to a cache line of the cache with a second partial write to the cache line of the cache.

Abstract: Techniques are provided herein to form semiconductor devices that include a layer across an upper surface of a dielectric fill between devices and configured to prevent or otherwise reduce recessing of the dielectric fill. In this manner, the layer may be referred to as a barrier layer or recess-inhibiting layer. The semiconductor regions of the devices extend above a subfin region that may be native to the substrate. These subfin regions are separated from one another using a dielectric fill that acts as a shallow trench isolation (STI) structure to electrically isolate devices from one another. A barrier layer is formed over the dielectric fill early in the fabrication process to prevent or otherwise reduce the dielectric fill from recessing during subsequent processing. The layer may include oxygen and a metal, such as aluminum.

Abstract: Embodiments described herein provide techniques to facilitate instruction-based control of memory attributes. One embodiment provides a graphics processor comprising a processing resource, a memory device, a cache coupled with the processing resources and the memory, and circuitry to process a memory access message received from the processing resource. The memory access message enables access to data of the memory device. To process the memory access message, the circuitry is configured to determine one or more cache attributes that indicate whether the data should be read from or stored the cache. The cache attributes may be provided by the memory access message or stored in state data associated with the data to be accessed by the access message.

Abstract: Techniques are provided herein to form semiconductor devices having epitaxial growth laterally extending between inner spacer structures to mitigate issues caused by the inner spacer structures either being too thick or too thin. A directional etch is performed along the side of a multilayer fin to create a relatively narrow opening for a source or drain region to increase the usable fin space for forming the inner spacer structures. After the inner spacer structures are formed around ends of the semiconductor layers within the fin, the exposed ends of the semiconductor layers are laterally recessed inwards from the outermost sidewalls of the inner spacer structures. Accordingly, the epitaxial source or drain region is grown from the recessed semiconductor ends and thus fills in the recessed regions between the spacer structures.

Abstract: An integrated circuit structure includes laterally adjacent first and second devices. The first device has (i) a first diffusion region, (ii) a first body including semiconductor material extending laterally from the first diffusion region, and (iii) a first gate structure on the first body. The first diffusion region has a first lower section that extends below a lower surface of the first gate structure, the first lower section having a first height. The second device has (i) a second diffusion region, (ii) a second body including semiconductor material extending laterally from the second diffusion region, and (iii) a second gate structure on the second body. The second diffusion region has a second lower section that extends below a lower surface of the second gate structure, the second lower section having a second height. In an example, the first height is at least 2 nanometers greater than the second height.

Abstract: A method comprises receiving, from a remote device, a first encrypted data set encrypted using a first encryption scheme, performing a set of computations on the first encrypted data set to generate a first set of encrypted results, encrypting the first set of encrypted results using a second encryption scheme to generate a second set of encrypted results, sending the second set of encrypted results to the remote device, receiving, from the remote device, third set of encrypted results in which the first encryption scheme has been decrypted, and generating a set of decrypted results by applying a decryption algorithm to the third set of encrypted results to decrypt the second encryption scheme.

Abstract: Described herein are full wafer devices that include interconnect layers on a back side of the device. The backside interconnect layers couple together different dies of the full wafer device. The backside interconnect layers include an active layer that includes active devices, such as transistors. The active devices may act as switches, e.g., to control routing of signals between different dies of the full wafer device.

Abstract: Described herein are full wafer devices that include passive devices formed in a power delivery structure. Power is delivered to the full wafer device on a backside of the full wafer device. A passive device in a backside layer is formed using an additive process that results in a seam running through the passive device. The seam may be, for example, an air gap, a change in material structure, or a region with a different chemical makeup from the surrounding passive device.

Abstract: An integrated circuit structure includes a sub-fin having (i) a first portion including a p-type dopant and (ii) a second portion including an n-type dopant. A first body of semiconductor material is above the first portion of the sub-fin, and a second body of semiconductor material is above the second portion of the sub-fin. In an example, the first portion of the sub-fin and the second portion of the sub-fin are in contact with each other, to form a PN junction of a diode. For example, the first portion of the sub-fin is part of an anode of the diode, and wherein the second portion of the sub-fin is part of a cathode of the diode.

Abstract: For example, an Access Point (AP) may be configured to transmit a frame including a prioritized-access enabled/disabled field to indicate whether a prioritized-access contention mechanism is to be enabled or disabled over a wireless medium. For example, the prioritized-access contention mechanism may be configured to allow a prioritized station (STA) to transmit a reservation signal over the wireless medium at a reservation signal transmission time, and to contend the wireless medium according to a high-priority contention policy to obtain a Transmit Opportunity (TxOP) after transmission of the reservation signal. For example, the reservation signal transmission time may be based on an end of a predefined time duration from a start of a contention period. For example, the reservation signal may be configured to indicate a busy Clear Channel Assessment (CCA) to a receiving STA.

Abstract: An apparatus to facilitate workload scheduling is disclosed. The apparatus includes one or more clients, one or more processing units to processes workloads received from the one or more clients, including hardware resources and scheduling logic to schedule direct access of the hardware resources to the one or more clients to process the workloads.

Abstract: An apparatus to facilitate data prefetching is disclosed. The apparatus includes a cache, one or more execution units (EUs) to execute program code, prefetch logic to maintain tracking information of memory instructions in the program code that trigger a cache miss and compiler logic to receive the tracking information, insert one or more pre-fetch instructions in updated program code to prefetch data from a memory for execution of one or more of the memory instructions that triggered a cache miss and download the updated program code for execution by the one or more EUs.

Abstract: A method comprises receiving, from an input device, an input speech signal, encoding the input speech signal to generate a first homomorphically encrypted string, sending the homomorphically encrypted string to a remote device via communication link, receiving, from the remote device, a reply comprising a second homomorphically encrypted string, decoding the second homomorphically encrypted string into an output speech signal, and outputting the output speech signal on an audio output device.

Abstract: Systems and methods for updating remote memory side caches in a multi-GPU configuration are disclosed herein. In one embodiment, a graphics processor for a multi-tile architecture includes a first graphics processing unit (GPU) having a first memory, a first memory side cache memory, a first communication fabric, and a first memory management unit (MMU). The graphics processor includes a second graphics processing unit (GPU) having a second memory, a second memory side cache memory, a second memory management unit (MMU), and a second communication fabric that is communicatively coupled to the first communication fabric. The first MMU is configured to control memory requests for the first memory, to update content in the first memory, to update content in the first memory side cache memory, and to determine whether to update the content in the second memory side cache memory.

Abstract: A nanowire device includes one or more nanowire having a first end portion, a second end portion, and a body portion between the first end portion and the second end portion. A first conductive structure is in contact with the first end portion and a second conductive structure is in contact with the second end portion. The body portion of the nanowire has a first cross-sectional shape and the first end portion has a second cross-sectional shape different from the first cross-sectional shape. Integrated circuits including the nanowire device and a method of cleaning a semiconductor structure are also disclosed.

Abstract: An integrated circuit structure includes a sub-fin having at least a portion that is doped with a first type of dopant, and a diffusion region doped with a second type of dopant. The diffusion region is in contact with the sub-fin and extends upward from the sub-fin. The first type of dopant is one of a p-type or an n-type dopant, and the second type of dopant is the other of the p-type or the n-type dopant. In an example, a first conductive contact is above and on the diffusion region, and a second conductive contact is in contact with the portion of the sub-fin. In an example, the diffusion region is at least a part of one of an anode or a cathode of a diode, and the portion of the sub-fin is at least a part of the other of the anode or the cathode of the diode.

Abstract: Disclosed herein are integrated circuit (IC) supports with microstrips, and related embodiments. For example, an IC support may include a plurality of microstrips and a plurality of conductive segments. Individual ones of the conductive segments may be at least partially over at least two microstrips, a dielectric material may be between the plurality of microstrips and the plurality of conductive segments, and the conductive segments are included in a tape.

Abstract: Techniques for a glass core inductor are disclosed. In the illustrative embodiment, an integrated circuit component includes a glass substrate and a fully-integrated voltage regulator (FIVR). The FIVR includes a glass core inductor that is embedded in the glass substrate. Each inductor turn of the inductor includes two angled through-glass vias and a trace on top of the glass substrate connecting the angled through-glass vias, resulting in an inductor with a cross-section in the shape of a triangle or trapezoid. The inductor may have a relatively large inductance per unit area, requiring less space or allowing for a larger inductance.

Abstract: An apparatus comprises a first supply node to provide a first voltage and a second supply node to provide a second voltage lower than the first voltage. First and second transistors, of a first conductivity type, are coupled in series at a first common node, wherein the first transistor is coupled to the first supply node, and the second transistor is coupled to an output node. Third and fourth transistors, of a second conductivity type, coupled in series at a second common node, wherein the fourth transistor is coupled to a third node that is to provide a third voltage, and the third transistor is coupled to the output node. First impedance circuitry is coupled to a gate terminal of the second transistor, the second supply node, and to a gate terminal of the first transistor.

Abstract: Multi-camera dynamic calibration can be performed using three or more images, each from a separate camera viewing the same 3D scene. Multi-camera translation magnitude can be determined by incorporating information from an additional image. A relative translation scale is determined for a configuration of three cameras using a ratio of translation magnitudes. The translation scale can be expanded to configurations having more than three cameras using the relative scale of the pair-wise camera translations to determine translation scales for a multi-camera set-up. If the ground-truth translation is known for a pair of cameras, then the translation magnitude can be determined for all pairs of cameras to ground-truth accuracy. Multi-camera scale estimation is divided into smaller overlapping triplet-camera scale estimation, and the translation scale determination corresponding to each image pair is applied iteratively to overlapping sets of three images.

Abstract: An integrated circuit structure includes a sub-fin, a source region in contact with a first portion of the sub-fin, and a drain region in contact with a second portion of the sub-fin. A body including semiconductor material is above the sub-fin, where the body extends laterally between the source region and the drain region. A gate structure is on the body and includes (i) a gate electrode, and (ii) a gate dielectric between the gate electrode and the body. In an example, a first distance between the drain region and the gate electrode is at least two times a second distance between the source region and the gate electrode, where the first and second distances are measured in a same horizontal plane that runs in a direction parallel to the body. In an example, the body is a nanoribbon, a nanosheet, a nanowire, or a fin.

Abstract: Described herein are full wafer devices that include passive devices formed in one or more interconnect layers. Interconnect layers are formed over a front side of the full wafer device. A passive device is formed using an additive process that results in a seam running through the passive device. The seam may be, for example, an air gap, a change in material structure, or a region with a different chemical makeup from the surrounding passive device. In some embodiments, the passive devices are formed in global interconnect layers coupling multiple does of the full wafer device.

Abstract: An apparatus of a user equipment (UE) includes processing circuitry, where to configure the UE for New Radio (NR) communications above a 52.6 GHz carrier frequency, the processing circuitry is to decode higher layer signaling, the higher layer signaling including a default slot duration for a transmission of control signaling. The control signaling includes a synchronization signal (SS) and a physical broadcast channel (PBCH) signaling. Synchronization information within a SS block is decoded. The SS block is received within a SS burst set and occupying a plurality of symbols within a slot having the default slot duration. A synchronization procedure is performed with a next generation Node-B (gNB) based on the synchronization information within the SS block and the PBCH signaling.

Abstract: A transistor structure includes a base and a body over the base. The body comprises a semiconductor material and has a first end portion and a second end portion. A gate structure is wrapped around the body between the first end portion and the second end portion, where the gate structure includes a gate electrode and a dielectric between the gate electrode and the body. A source is in contact with the first end portion and a drain is in contact with the second end portion. A first spacer material is on opposite sides of the gate electrode and above the first end portion. A second spacer material is adjacent the gate structure and under the first end portion of the nanowire body. The second spacer material is below and in contact with a bottom surface of the source and the drain.

Abstract: Systems, apparatus, methods, and techniques for reporting an attack or intrusion into an in-vehicle network are provided. The attack can be broadcast to connected vehicles over a vehicle-to-vehicle network. The broadcast can include an indication of a sub-system involved in the attack and can include a request for assistance in recovering from the attack. Connected vehicles can broadcast responses over the vehicle-to-vehicle network. The responses can include indications of data related to the compromised sub-system. The vehicle can receive the responses and can use the responses to recover from the attack, such as, estimate data.

Abstract: Personal computing device covers having stands are disclosed. A disclosed example apparatus includes a protective cover to at least partially cover a personal computing device. The cover includes a fixed panel to be thermally coupled to a chassis of the personal computing device to define a heatsink of the personal computing device, and a foldable panel to be rotatably coupled to the fixed panel via a hinge to support the personal computing device to stand at an angle from a surface.