Abstract: A controller for an autonomous vehicle may include: one or more processors configured to: determine a maneuver planned for the vehicle based on a safety driving model and based on a first message from a network component external to the vehicle, the first message including a respective assessment for each proposed maneuver of at least two maneuvers proposed for the vehicle, and provide an in-vehicle instruction to perform the maneuver planned for the vehicle.

Abstract: A disclosed example includes accessing, by a backend block service driver in an input/output virtual machine executing on one or more processors, a first command submitted to a buffer by a paravirtualized input/output frontend block driver executing in a guest virtual machine; generating, by the backend block service driver, a translated command based on the first command by translating a virtual parameter of the first command to a physical parameter associated with a physical resource; submitting, by the backend block service driver, the translated command to an input/output queue to be processed by the physical resource based on the physical parameter; and submitting, by the backend block service driver, a completion status entry to the buffer, the completion status entry indicative of completion of a direct memory access operation that copies data between the physical resource and a guest memory buffer corresponding to the guest virtual machine.

Abstract: One embodiment provides an apparatus comprising a memory stack including multiple memory dies and a parallel processor including a plurality of multiprocessors. Each multiprocessor has a single instruction, multiple thread (SIMT) architecture, the parallel processor coupled to the memory stack via one or more memory interfaces. At least one multiprocessor comprises a multiply-accumulate circuit to perform multiply-accumulate operations on matrix data in a stage of a neural network implementation to produce a result matrix comprising a plurality of matrix data elements at a first precision, precision tracking logic to evaluate metrics associated with the matrix data elements and indicate if an optimization is to be performed for representing data at a second stage of the neural network implementation, and a numerical transform unit to dynamically perform a numerical transform operation on the matrix data elements based on the indication to produce transformed matrix data elements at a second precision.

Abstract: An activity recording system is provided. The activity recording system includes a three-dimensional camera, a sensor arrangement that is fitted to a subject being recorded, and an activity recording device. The activity recording device receives image information from the three-dimensional camera and sensor arrangement information from the sensor arrangement. Both the image information and the sensor arrangement information include location measurements. The sensor arrangement information is generated by location sensors that are positioned at target features of the subject to be tracked. The sensor arrangement information is a key to the image information that specifies where, in any given image, the target features of the subject lie. Activity data having these characteristics may be applied to solve a variety of system development problems. Such activity data can be used to training machine learning components or test computer vision components for a fraction of the cost of using conventional techniques.

Abstract: An integrated circuit interconnect level including a lower metallization line vertically spaced from upper metallization lines. Lower metallization lines may be self-aligned to upper metallization lines enabling increased metallization line width without sacrificing line density for a given interconnect level. Combinations of upper and lower metallization lines within an interconnect metallization level may be designed to control intra-layer resistance/capacitance of integrated circuit interconnect. Dielectric material between two adjacent co-planar metallization lines may be recessed or deposited selectively to the metallization lines. Supplemental metallization may then be deposited and planarized. A top surface of the supplemental metallization may either be recessed to form lower metallization lines between upper metallization lines, or planarized with dielectric material to form upper metallization lines between lower metallization lines.

Abstract: Examples described herein relate to a graphics processing apparatus that includes a memory device; and a central processing unit (CPU). In some examples, the CPU is configured to: execute a producer to issue graphics command application program interfaces (APIs); execute a driver to translate graphics command APIs into executable instructions; and based on an idle state of the producer, execute a command translation code segment of the producer to translate graphics command APIs into executable instructions. In some examples, the execution unit is coupled to the memory device, the execution unit to execute one or more of the executable instructions. In some examples, the producer includes multiple portions such as application code, graphics pipeline runtime code, and command translation code segment.

Abstract: An example apparatus for detecting objects in video frames includes a receiver to receive a plurality of video frames from a video camera. The apparatus also includes a first still image object detector to receive a first frame of the plurality of video frames and calculate localization information and confidence information for each potential object patch in the first frame. The apparatus further includes a second still image object detector to receive an adjacent frame of the plurality of video frames adjacent to the first frame and calculate localization information and confidence information for each potential object patch in the adjacent frame. The apparatus includes a similarity detector trained to detect paired patches between the first frame and the adjacent frame based on a comparison of the detected potential object patches.

Abstract: An apparatus is provided which comprises: a substrate; one or more active devices adjacent to the substrate; a first set of one or more layers to interconnect the one or more active devices; a second set of one or more layers; and a layer adjacent to one of the layers of the first and second sets, wherein the layer is to bond the one of the layers of the first and second sets.

Abstract: Methods, systems and apparatuses may provide for technology that renders a plurality of virtual monitors to a head mounted display (HMD), detects a change in gaze direction with respect to the HMD, and conducts a modification of one or more of a refresh rate or a texture capture rate associated with at least one of the plurality of virtual monitors based on the change in gaze direction.

Abstract: Apparatus, system and method to provide switchable coils in a computing device, comprising: a plurality of electrically conductive coils to transfer electromagnetic energy; a sensor coupled to a processor, to select a coil from among the plurality of electrically conductive coils; a switch to energize the selected coil; and a switch controller coupled to the switch and to the processor. In some embodiments, the plurality of coils may comprise an inductive charging interface. Some embodiments may further include a communication interface between the processor to the plurality of electrically conductive coils, the plurality of coils comprising an interface for near-field communications (NFC). The antenna coils may be arranged to provide improved NFC coverage when the computing device is in a respective predetermined physical configuration. Sensors may be used to detect the configuration and switch NFC communications to use a preferred antenna coil for the detected configuration.

Abstract: Methods, apparatus, systems, and articles of manufacture are disclosed to improve in-memory multiply and accumulate operations. An example apparatus includes a first multiplexer in a subarray of memory, the first multiplexer to receive first values representative of a column of a lookup table (LUT) including entries to represent products of four-bit numbers and return second values from an intersection of a row and the column of the LUT based on a first element of a first operand; shift and adder logic in the subarray, the shift and adder logic to shift the second values based on at least one of the first element of the first operand or a first element of a second operand; and accumulation storage in the subarray, the accumulation storage to store at least the shifted second values.

Abstract: An integrated circuit (IC) die structure comprises a substrate material comprising silicon. Integrated circuitry is over a first side of the substrate material. A composite layer is in direct contact with a second side of the substrate material. The second side is opposite the first side. The composite layer comprises a first constituent material associated with a first linear coefficient of thermal expansion (CTE), and a first thermal conductivity exceeding that of the substrate. The composite layer also comprises a second constituent material associated with a second CTE that is lower than the first, and a second thermal conductivity exceeding that of the substrate.

Abstract: Embodiments described herein provide a semiconductor package comprising multiple dies encapsulated in multiple molding compounds. In one example, a semiconductor package comprises: a first die or die stack on a substrate; a first molding compound encapsulating the first die or die stack on the substrate; a second die or die stack on the first molding compound; and a second molding compound encapsulating the second die or die stack and at least one portion of the first molding compound. In this example, the first die or die stack is electrically coupled to the substrate using a first wire bond and the second die or die stack is electrically coupled to the substrate using a second wire bond. Additionally, the first molding compound encapsulates the first wire bond and the second molding compound encapsulates the second wire bond. Furthermore, a footprint of the second die overlaps a footprint of the first die.

Abstract: An apparatus includes a first set of processing element nodes, the first set of processing element nodes defining a first hierarchy of processing element nodes, the first set of processing element nodes comprising a source node, a first look-up table (LUT), and a first forwarder node, the source node to communicate with the first forwarder node by a first virtual channel. The apparatus includes a second set of processing element nodes, the second set of processing element nodes defining a second hierarchy of processing element nodes, the second set of processing element nodes comprising a second forwarder node, a second LUT, the second LUT comprising an indication of a direction of the first forwarder node in the first hierarchy, and a target node logically coupled to the second forwarder node by the first virtual channel. The first LUT comprises a direction of the second forwarder node in the second hierarchy.

Abstract: A wireless communication device, method and system. The device includes a memory, and a processing circuitry coupled to the memory. The processing circuitry is to: decode at least one signal field portion of a signal field of a Physical Layer Convergence Protocol (PLCP) Data Unit (PPDU) received over a bonded channel, the bonded channel comprising a plurality of subchannels including a punctured subchannel, the signal field portion on at least one unpunctured subchannel of the plurality of subchannels; determine, from the at least one signal field portion, information on a resource allocation for the device, the resource allocation indicating at least one resource unit (RU) used in a data field of the PPDU for the device; and decode a data field portion of the data field of the PPDU, the data field portion received on a part of the punctured subchannel based on the resource allocation.

Abstract: A disclosed example gateway node includes network communicator circuitry, memory, instructions, and processor circuitry. The network communicator circuitry is to send a first portion of a multi-part secret key to a first secret holder node, and send a plurality of shares of a second portion of the multi-part secret key to second secret holder nodes. The processor circuitry is to execute the instructions to combine responses from the first secret holder node and at least one of the second secret holder nodes to generate a combined authentication message, the network communicator circuitry to send the combined authentication message to a terminal node for authentication.

Abstract: The present disclosure relates to a concept for a transformer, a transmitter circuit, a semiconductor chip, a semiconductor package, a base station, a mobile device and a method for a radio frequency transmitter. The transformer for a radio frequency transmitter circuit comprises a primary coil and a secondary coils, which are configured to receive an input signal and to provide an output signal, and a ternary coil configured to provide a feedback signal.

Abstract: An integrated circuit (IC) die includes a plurality of front-side metallization layers including a first front-side metallization layer and one or more additional front-side metallization layers, a plurality of back-side metallization layers formed on the plurality front side metallization layers including a first back-side metallization layer and one or more additional back-side metallization layers, wherein the first front-side metallization layer is proximate to the first back-side metallization layer, and a vertical metallization structure formed through at least the first front-side metallization layer and the first back-side metallization layer, wherein the vertical metallization structure electrically connects a first metallization structure on one of the one or more additional front-side metallization layers to a second metallization structure on one of the one or more additional back-side metallization layers. Other embodiments are disclosed and claimed.

Abstract: An integrated circuit (IC) die includes a plurality of ferroelectric tunnel junction (FTJ) devices, where at least one FTJ of the plurality of FTJ devices comprises first electrode, a second electrode, ferroelectric material disposed between the first and second electrodes, and interface material disposed between at least one of the first and second electrodes and the ferroelectric material. Other embodiments are disclosed and claimed.

Abstract: An IC device includes a multilayer metal line that is at least partially surrounded by one or more electrical insulators. The multilayer metal line may be formed by stacking four layers on top of one another. The four layers may include a first layer between a second layer and a third layer. The first layer may include Al. The second or third layer may include W. The fourth layer may be a conductive or dielectric layer. The second layer, third layer, and fourth layer can protect the first layer from defects in Al core layer during fabrication or operation of the multilayer metal line. Substrative etch may be performed on the stack of the four layers to form openings. An electrical insulator may be deposited into to the openings to form multiple metal lines that are separated by the electrical insulator. A via may be formed over the third layer.

Abstract: An integrated circuit (IC) die includes a first layer with conductive structures formed in a interlayer dielectric (ILD) material, with a portion of the conductive structures at a first surface of the first layer, a self-alignment layer in contact with non-conductive regions at the first surface of the first layer, a second layer with ILD material in contact with the self-alignment layer and the portion of the conductive structures at the first surface of the first layer, and conductive vias through the self-alignment layer and the second layer in contact with the portion of the conductive structures at the first surface of the first layer. The self-alignment layer may include a first material where the self-alignment layer is in contact with the conductive vias and a second material where the self-alignment layer is not in contact with the conductive vias. Other embodiments are disclosed and claimed.

Abstract: Techniques are described to form semiconductor devices that include one or more gate cuts having a very high aspect ratio (e.g., an aspect ratio of 5:1 or greater). A semiconductor device includes a conductive material that is part of a transistor gate structure around or otherwise on a semiconductor region. The gate structure may be interrupted between two transistors with a gate cut that extends through an entire thickness of the gate structure. A plasma etching process may be performed to form the gate cut with a very high height-to-width aspect ratio with little to no tapering in its sidewall profile, so as to enable densely integrated devices. Furthermore, an etching process may be performed on a gate masking structure used to pattern the location of the gate cuts to ensure that the gate masking structure has low sidewall taper and sufficiently opened enough to expose the underlying gate.

Abstract: In one embodiment, a processor includes a cache and a core. The core includes an execution unit and cryptographic computing circuitry to encrypt plaintext data output by the execution unit and store the encrypted data in the cache and decrypt encrypted data accessed from the cache and provide the decrypted data to the execution unit for processing. The encryption and decryption are based on both a stream cipher and a block cipher. In some embodiments, the encryption is based on providing an output of the stream cipher to the block cipher and the decryption is based on providing an output of the block cipher to the stream cipher.

Abstract: A transistor device may include a first perovskite gate material, a first perovskite ferroelectric material on the first gate material, a first perovskite semiconductor material on the first ferroelectric material, a second perovskite ferroelectric material on the first semiconductor material, a second perovskite gate material on the second ferroelectric material, a third perovskite ferroelectric material on the second gate material, a second perovskite semiconductor material on the third ferroelectric material, a fourth perovskite ferroelectric material on the second semiconductor material, a third perovskite gate material on the fourth ferroelectric material, a first source/drain metal adjacent a first side of each of the first semiconductor material and the second semiconductor material, a second source/drain metal adjacent a second side opposite the first side of each of the first semiconductor material and the second semiconductor material, and dielectric materials between the source/drain metals and the

Abstract: An improved AR/VR operation includes receiving, by a server computing device, encrypted AR/VR user data and cleartext metadata associated with the encrypted AR/VR user data from a client computing device; getting server data based at least in part on cleartext metadata; encoding the server data; performing an AR/VR process on the encrypted AR/VR user data and the encoded server data to generate encrypted AR/VR results; and sending the encrypted AR/VR results to the client computing device.

Abstract: A method comprises receiving, from a remote device, an audio/video input signal, identifying one or more objects in the audio/video input signal tagged as a sensitive object, evaluating a set of workload requirements for a set of processing workloads comprising portions of the audio/video input signal, selecting one or more heavy processing workloads in the set of processing workloads to send to a compute service provider, in response to a determination that the one or more heavy processing workloads comprises one or more objects tagged as a sensitive object, encrypting the one or more objects tagged as a sensitive object using a homomorphic encryption protocol to generate a first homomorphically encrypted string, and sending the first homomorphically encrypted string to the compute service provider via a privacy protected communication channel.

Abstract: An improved search operation includes receiving, by a server computing device, an encrypted search query and cleartext metadata associated with the encrypted search query from a client computing device; performing a search using the encrypted search query to generate encrypted search results; and sending the encrypted search results to the client computing device.

Abstract: Systems and methods include establishing a cryptographically secure communication between an application module and an audio module. The application module is configured to execute on an information-handling machine, and the audio module is coupled to the information-handling machine. The establishment of the cryptographically secure communication may be at least partially facilitated by a mutually trusted module.

Abstract: A system and method for generating, from a permutation of a first input state, a first output state, a first rate and a first capacity, the first rate including a first portion of the first output state and the first capacity including a second portion of the first output state; storing the first output state; generating a first block of ciphertext data of a first packet from XORing the first rate and a first block of plaintext data of the first packet; generating a permutation of a value of the first block of ciphertext data of the first packet concatenated with the first capacity, and generating a second block of ciphertext data of the first packet from XOR of the permutation of the value of the first block of ciphertext data of the first packet concatenated with the first capacity.

Abstract: Various arrangements for IC devices implementing memory with one access transistor for multiple capacitors are disclosed. An example IC device includes a memory array of M memory units, where each memory unit includes an access transistor and N capacitors coupled to the access transistor. A portion of the capacitors are formed in one or more layers above the access transistor, and a portion of the capacitors are formed in one or more layers below the access transistor. The capacitors in a particular memory unit may be coupled to a single via or to individual vias. In some embodiments, some of the vias are backside vias.

Abstract: An example of an integrated circuit may include a first execution cluster, a second execution cluster that is one or more of narrower and shallower as compared to the first execution cluster, and circuitry to selectively steer instructions to the first execution cluster and the second execution cluster based on branch misprediction information. Other embodiments are disclosed and claimed.

Abstract: Apparatuses to synchronize lanes that diverge or threads that drift are disclosed. In one embodiment, a graphics multiprocessor includes a queue having an initial state of groups with a first group having threads of first and second instruction types and a second group having threads of the first and second instruction types. A regroup engine (or regroup circuitry) regroups threads into a third group having threads of the first instruction type and a fourth group having threads of the second instruction type.

Abstract: An integrated circuit die includes a first conductive structure for an input of a capacitively coupled device, a second conductive structure aligned with the first conductive structure for a signal to be capacitively coupled to the input of the capacitively coupled device, a first insulator material disposed between the first conductive structure and the second conductive structure, wherein the first insulator material comprises high gain insulator material, and a cooling structure operable to remove heat from the capacitively coupled device to achieve an operating temperature at or below 0° C. Other embodiments are disclosed and claimed.

Abstract: Techniques relating to virtual idle loops are described. In an embodiment, decoder circuitry decodes a single instruction. The single instruction includes a field for an identifier of a first source operand, a field for an identifier of a second source operand, a field for an identifier of a destination operand, and a field for an opcode. Execution circuitry executes the decoded instruction according to the opcode to: write the first source operand to a memory location identified by the second source operand; compute an index into a control array based at least in part on the destination operand; and determine whether to exit to a hypervisor of a Virtual Machine (VM) based at least in part on data stored at a location in the control array, wherein the location is to be identified by the computed index. Other embodiments are also disclosed and claimed.

Abstract: A processor includes a processing core having a register to store an encoded pointer for a memory address to a memory allocation of a memory, the encoded pointer including a first even odd slot (EOS) bit set to a first value and a second EOS bit set to a second value; and circuitry to receive a memory access request based on the encoded pointer; and in response to determining that the first value matches the second value, perform a memory operation corresponding to the memory access request.

Abstract: Prefetch aware LRU cache replacement policy is described. An example of an apparatus includes one or more processors including a graphic processor, the graphics processor including a load store cache having multiple cache lines (CLs), each including bits for a cache line level (CL level) and one or more sectors for data storage; wherein the graphics processor is to receive one or more data elements for storage in the cache; set a CL level to track each CL receiving data, including setting CL level 1 for a CL receiving data in response to a miss in the cache and setting a CL level 2 for a CL receiving prefetched data in response to a prefetch request, and, upon determining that space is required in the cache to store data, apply a cache replacement policy, the policy being based at least in part on set CL levels for the CLs.

Abstract: In one embodiment, transistor device includes a first source or drain material on a substrate, a semiconductor material on the first source or drain material, a second source or drain material on the semiconductor material, a dielectric layer on the substrate and adjacent the first source or drain material, a ferroelectric (FE) material on the dielectric layer and adjacent the semiconductor material, and a gate material on or adjacent to the FE material. The FE material may be a perovskite material and may have a lattice parameter that is less than a lattice parameter of the semiconductor material.

Abstract: An example of an apparatus may include a first cache organized as two or more portions, a second cache, and circuitry coupled to the first cache and the second cache to determine a designated portion allocation for data transferred from the first cache to the second cache, and track the designated portion allocation for the data transferred from the first cache to the second cache. Other examples are disclosed and claimed.

Abstract: This disclosure describes systems, methods, and devices related to traffic indication map (TIM) piggybacking. A device may determine a frame including one or more TIMs indicating that the device has data to send in a first frequency band of a plurality of supported frequency bands. The device may cause to send the frame in a second frequency band of the plurality of supported frequency bands, wherein the first frequency band is different from the second frequency band, wherein the frame indicates a request for a first station device to be awake in the first frequency band to receive the data. The device may cause to send the data using the first frequency band.

Abstract: Embodiments are directed to trusted local memory management in a virtualized GPU. An embodiment of an apparatus includes one or more processors including a trusted execution environment (TEE); a GPU including a trusted agent; and a memory, the memory including GPU local memory, the trusted agent to ensure proper allocation/deallocation of the local memory and verify translations between graphics physical addresses (PAs) and PAs for the apparatus, wherein the local memory is partitioned into protection regions including a protected region and an unprotected region, and wherein the protected region to store a memory permission table maintained by the trusted agent, the memory permission table to include any virtual function assigned to a trusted domain, a per process graphics translation table to translate between graphics virtual address (VA) to graphics guest PA (GPA), and a local memory translation table to translate between graphics GPAs and PAs for the local memory.

Abstract: Technologies for memory management with memory protection extension include a computing device having a processor with one or more protection extensions. The processor may load a logical address including a segment base, effective limit, and effective address and generate a linear address as a function of the logical address with the effective limit as a mask. The processor may switch to a new task described by a task state segment extension. The task state extension may specify a low-latency segmentation mode. The processor may prohibit access to a descriptor in a local descriptor table with a descriptor privilege level lower than the current privilege level of the processor. The computing device may load a secure enclave using secure enclave support of the processor. The secure enclave may load an unsandbox and a sandboxed application in a user privilege level of the processor. Other embodiments are described and claimed.

Abstract: Machine learning models can process a video and generate outputs such as action segmentation assigning portions of the video to a particular action, or action classification assigning an action class for each frame of the video. Some machine learning models can accurately make predictions for short videos but may not be particularly suited for performing action segmentation for long duration, structured videos. An effective machine learning model may include a hybrid architecture involving a temporal convolutional network and a bi-directional graph neural network. The machine learning model can process long duration structured videos by using a temporal convolutional network as a first pass action segmentation model to generate rich, frame-wise features. The frame-wise features can be converted into a graph having forward edges and backward edges. A graph neural network can process the graph to refine a final fine-grain per-frame action prediction.

Abstract: An apparatus to facilitate supporting vector multiply add with double accumulator access in a graphics environment is disclosed. The apparatus includes a processor comprising processing resources, the processing resources comprising multiplier circuitry to: receive operands for a matrix multiplication operation, wherein the operands comprising two source matrices to be multiplied as part of the matrix multiplication operation; and issue a multiply and add vector (MADV) instruction for the multiplication operation utilizing a double accumulator access output, wherein the MADV instruction to multiply two vectors of the two source matrices in a single floating point (FP) pipeline of the processor.

Abstract: A system and method of enhancing the mitigation of side channel attacks on platform interconnects using endpoint HW based detection, synchronization, and re-keying include generating a set of keys for link encryption based on a high entropy seed, storing the set of keys in a deterministic order in a register, detecting that a re-key programmable threshold is met during link encryption with a device, identifying a synchronization point associated with the device, where the synchronization point indicates the device is ready to switch a current key used for link encryption, and synchronizing a rekeying event with the device.

Abstract: Techniques are provided to form semiconductor devices that include one or more gate cuts having a layer of polymer material at edges of the gate cut. The polymer layer may be provided as a byproduct of the etching process used to form the gate cut recess through the gate structure, and can protect any exposed portions of the source or drain regions from certain subsequent processes. The gate structure may be interrupted between two transistors with a gate cut that extends through an entire thickness of the gate structure and includes a dielectric material to electrically isolate the portions of the gate structure on either side of the gate cut. The edges of the gate cut may be lined with a polymer layer that is also on any exposed portions of the source or drain regions that were exposed during the etching process used to form the gate cut recess.

Abstract: Techniques are provided herein to form semiconductor devices that include one or more gate cuts having a very high aspect ratio (e.g., an aspect ratio of 5:1 or greater, such as 10:1). In an example, a semiconductor device includes a conductive material that is part of a transistor gate structure around or otherwise on a semiconductor region. The semiconductor region can be, for example, a fin of semiconductor material that extends between a source region and a drain region, or one or more nanowires or nanoribbons of semiconductor material that extend between a source region and a drain region. The gate structure may be interrupted between two transistors with a gate cut that extends through an entire thickness of the gate structure. A particular plasma etching process may be performed to form the gate cut with a very high height-to-width aspect ratio so as to enable densely integrated devices.

Abstract: Technologies for a hybrid digital/analog processor for a quantum computer are disclosed. In the illustrative embodiment, a hybrid digital/analog processor may be able to process digital instructions as well as analog instructions. The digital instructions may be, e.g., read from or write to memory or registers, perform an arithmetic operation, perform a branch, etc. The analog instructions may be to, e.g., provide an analog voltage to a particular electrode of a qubit, provide an analog pulse to a qubit, measure a reflection of an analog signal from a qubit, etc. The integration of analog operations in the hybrid digital/analog processor can improve performance by, e.g., lowering latency and lowering power usage.

Abstract: Systems, apparatuses and methods may provide for technology that processes an inference workload in a first subset of layers of a neural network that prevents or inhibits data dependent branch operations, conducts an exit determination as to whether an output of the first subset of layers satisfies one or more exit criteria, and selectively bypasses processing of the output in a second subset of layers of the neural network based on the exit determination. The technology may also speculatively initiate the processing of the output in the second subset of layers while the exit determination is pending. Additionally, when the inference workloads include a plurality of batches, the technology may mask one or more of the plurality of batches from processing in the second subset of layers.

Abstract: A mechanism is described for facilitating real-time multi-view detection of objects in multi-camera environments, according to one embodiment. A method of embodiments, as described herein, includes mapping first lines associated with objects to a ground plane; and forming clusters of second lines corresponding to the first lines such that an intersection point in a cluster represents a position of an object on the ground plane.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a conductive pad having a first surface and an opposing second surface; a conductive via coupled to the first surface of the conductive pad; a microelectronic component having a conductive contact, the conductive contact of the microelectronic component electrically coupled, by an interconnect, to the second surface of the conductive pad, wherein a material of the interconnect includes nickel or tin; and a liner between the interconnect and the second surface of the conductive pad, and wherein a material of the liner includes nickel, palladium, or gold. In some embodiments, a bottom surface of the liner is curved outward towards the conductive pad. In some embodiments, the liner also may be on side surfaces of the interconnect.