Abstract: A device includes first and second semiconductor-regions located in a substrate which are adjacent to each other at a boundary. First contacts are located in the first semiconductor-region along the boundary and are electrically connected to the first semiconductor-region. Second contacts are located in the second semiconductor-region along the boundary and are electrically connected to the second semiconductor-region. The second contacts are not located in parts of the second semiconductor-region on an opposite side to the first contacts across the boundary. The parts of the second semiconductor-region are adjacent to the first contacts in a first direction s perpendicular to an arranging direction of the first and second contacts. The first contacts are not located in parts of the first semiconductor-region on an opposite side to the second contacts across the boundary. The parts of the first semiconductor-region are adjacent to second contacts in the first direction.

Abstract: A microwave module lid is disclosed. The microwave module lid can include an inner side operable to define, at least in part, a cavity configured to have a radio frequency (RF) emitting component disposed therein. The microwave module lid can also include two or more dielectric layers proximate one another. Each layer can have a thickness, a dielectric constant, and a dielectric loss characteristic. In addition, the microwave module lid can include a metal backing layer proximate one of the dielectric layers to contain RF energy within the lid. The thicknesses, the dielectric constants, and/or the dielectric loss characteristics of the dielectric layers can be configured to minimize RF resonance in the cavity.

Abstract: A device comprising a semiconductor device, a conductive via laterally separated from the semiconductor, an encapsulant between the semiconductor device and the conductive via, and a mark. The mark is formed from characters that are either cross-free characters or else have a overlap count of less than two. In another embodiment the mark is formed using a wobble scan methodology. By forming marks as described, defects from the marking process may be reduced or eliminated.

Abstract: A package includes a substrate having an electronic component flip chip mounted thereto by flip chip bumps. The electronic component includes an active surface and an inactive surface. Electrically conductive columns (TSV) extend through the electronic component between the active surface and the inactive surface. A RDL structure is coupled to the inactive surface, the RDL structure redistributing the pattern of the electrically conductive columns at the inactive surface to a pattern of inactive surface RDL lands. The inactive surface RDL lands are exposed through via apertures of a package body. By using the inactive surface of the electronic component to distribute the inactive surface RDL lands, the allowable size of the electronic component is maximized.

Abstract: A hermetically sealed electronic device and method of fabrication are provided. A base layer of a wafer is created using a substrate formed from ultra-thin glass or ceramic using panel or roll to roll processing. One or more layers are bonded to the base layer. The wafer is singulated into a plurality of electronic devices having a top surface and a plurality of sides. A hermetic sealant is applied to each electronic device to completely encase the top surface and the sides while bonding to the base layer. At least one of the layers is a metallization layer formed by metal deposition. Full metallization may be applied over the entire wafer and a pattern subsequently transferred to the full metallization by one of laser and chemical etching. The electronic device may further include at least one electronic component attached to one of the layers and encased by the hermetic sealant.

Abstract: An electronic package that includes a substrate and a die attached to the substrate. A plurality of supports attached to the substrate adjacent to the die. At least one support in the plurality of supports is positioned adjacent to at least one corner of the die such that the at least one corner of the die is positioned adjacent to the at least one support. Other example forms relate to a method of fabricating an electronic package. The method includes securing a die to a substrate and securing a plurality of supports to the substrate such that at least one support is adjacent to at least one corner of the die.

Abstract: A semiconductor device includes: a substrate; a semiconductor element disposed on the substrate; a plurality of electrodes disposed on the substrate separately from one another and arranged so as to surround the semiconductor element in a plan view; a lid that cover the semiconductor element, the lid including an inner portion and a periphery portion that is outer than the inner portion in a plan view, the lid including a plurality of first protruding members that is provided separately from one another, the first protruding members being disposed in the inner portion; and conductive members disposed between the plurality of electrodes and the plurality of protruding members disposed in positions opposed to the plurality of electrodes respectively, the conductive members being joined to the plurality of electrodes and the plurality of protruding members respectively.

Abstract: A semiconductor device with fine pitch redistribution layers is disclosed and may include a semiconductor die with a bond pad and a first passivation layer comprising an opening above the bond pad. A redistribution layer (RDL) may be formed on the passivation layer with one end of the RDL electrically coupled to the bond pad and a second end comprising a connection region. A second passivation layer may be formed on the RDL with an opening for the connection region of the RDL. An under bump metal (UBM) may be formed on the connection region of the RDL and a portion of the second passivation layer. A bump contact may be formed on the UBM, wherein a width of the RDL is less than a width of the opening in the second passivation layer and may be constant from the bond pad through at least a portion of the opening.

Abstract: An organic light emitting diode (OLED) display is provided. The OLED display has a plurality of pixel regions and comprises a substrate, a first electrode layer formed on the substrate, a second electrode layer formed on the first electrode layer, a pixel defining layer, and a light absorption composite layer. The pixel regions are separated by the pixel defining layer. The light absorption composite layer is formed on the substrate, and absorbs a light with wavelength of 380˜780 nm. The light absorption composite layer comprises a first light absorption layer and a second light absorption layer stacked together. The first light absorption layer absorbs a light with shorter wavelength. The second light absorption layer absorbs a light with longer wavelength different from that of the light absorbed by the first light absorption layer in the region of 380˜780 nm.

Abstract: In an organic electroluminescent device, deterioration of an organic material layer of an OLED due to moisture and the like from a surrounding material is effectively prevented. An OLED is provided with an organic material layer including a light emitting layer and is provided on a lower substrate. A first diamond-like carbon layer is provided between the lower substrate and the organic material layer and is at least arranged in a light emitting area in a surface along the lower substrate. A second diamond-like carbon layer is provided above the organic material layer and is at least arranged in the light emitting area.

Abstract: An organic light emitting diode display includes a plurality of pixels. At least one pixel is connected to a scan line receive a scan signal, a data line to receive a data signal, and voltage line to receive a driving voltage. The at least one pixel includes a switching transistor including a switching drain electrode to output the data voltage, a driving transistor including a driving source electrode connected to the switching drain electrode, and an organic light emitting diode connected to a driving drain electrode of the driving transistor. The driving source electrode is separated from the data line.

Abstract: An integrated circuit (IC) package that includes a first die, a wire bond coupled to the first die, a first encapsulation layer that at least partially encapsulates the first die and the wire bond, a second die, a redistribution portion coupled to the second die, and a second encapsulation layer that at least partially encapsulates the second die. In some implementations, the wire bond is coupled to the redistribution portion. In some implementations, the integrated circuit (IC) package further includes a package interconnect that is at least partially encapsulated by the second encapsulation layer. In some implementations, the integrated circuit (IC) package further includes a via that is at least partially encapsulated by the second encapsulation layer. In some implementations, the integrated circuit (IC) package has a height of about 500 microns (?m) or less.

Abstract: An integrated circuit package with embedded passive structures may include first and second integrated circuit dies that are surrounded by capacitor structures. A molding compound is deposited to encapsulate the integrated circuit dies and the capacitor structures. The molding compound is then attached to a redistribution wafer, in which the integrated circuit dies and the capacitor structures are electrically connected to metal routing layers of the redistribution wafer. A conductive layer is subsequently formed over the first integrated circuit die in the molding compound. The conductive layer is made up of additional metal routing layers and inductor structures. The integrated circuit package may further include a group of conductive vias that is formed in the molding compound. Each conductive via has a first end contacting the metal routing layers of the distribution wafer, and a second end contacting the conductive layer.

Abstract: Embodiments described herein relate to silicone-based thermal interface materials which include a thermally conductive material and a silicone-based polymeric material having a solubility parameter that is not less than 9.09 cal1/2 cm?3/2.

Abstract: A semiconductor device includes a semiconductor substrate, a conductive pad on the semiconductor substrate, and a first dielectric over the semiconductor substrate. The semiconductor device also includes a conductive layer disposed in the first dielectric and a second dielectric disposed on the conductive layer. In the semiconductor device, at least a portion of the conductive layer is exposed from the first dielectric and second dielectric. The semiconductor device further includes a conductive trace partially over the second dielectric and in contact with the exposed portion of the conductive layer. In the semiconductor device, the conductive trace is connected to the conductive pad at one end.

Abstract: An organic light-emitting device includes: an organic light-emitting device that includes: a cathode; an anode facing the cathode; a functional layer located between the cathode and the anode, the functional layer including a light-emitting layer; and an electron-injection layer located between the cathode and the functional layer, the electron-injection layer at least partially composed of a metallic compound containing a metal element, wherein the electron-injection layer includes crystal grains in which the metallic compound is crystallized and the metal element has a d10 electron configuration in the outermost shell, and at least one of the crystal grains is in contact with both the cathode and the functional layer.

Abstract: A circuit arrangement includes at least two semiconductor chip having first and second load terminals that are each connected to one another, a first load current collecting conductor track, and also an external terminal electrically conductively connected thereto. For each of the semiconductor chips there is at least one electrical connection conductor electrically conductively connected to the first load terminal of the relevant semiconductor chip and also to the first load current collecting conductor track. The total inductance of all the connection conductors with which the first load terminal of the second of the semiconductor chips is connected to the first load current collecting conductor track has at least twice the inductance of that section of the first load current collecting conductor track which is formed between the second connection location of the first of the semiconductor chips and the second connection location of the second of the semiconductor chips.

Abstract: The present invention provides a semiconductor structure comprising a wafer and an aligning mark. The wafer has a dicing region which comprises a central region, a middle region surrounds the central region, and a peripheral region surrounds the middle region. The aligning mark is disposed in the dicing region, wherein the alignment mark is a mirror symmetrical pattern. The aligning mark comprises a plurality of second patterns in the middle region and a plurality of third patterns disposed in peripheral region, wherein each third pattern comprises a plurality of lines, and a width of the line is 10 times less than a width of the L-shapes. The present invention further provides a method of forming the same.

Abstract: A semiconductor package and a method for fabricating the semiconductor package are provided. The semiconductor package includes a base layer, a plurality of conductive pillars, a semiconductor element, and an encapsulation. The base layer has opposing first and second surfaces and a receiving part. The conductive pillars are formed on the second surface. Each of the conductive pillars has first and second terminals, and the second terminal is distant from the second surface of the base layer. The semiconductor element is received in the receiving part, and has opposing active and passive surfaces, and the active surface is exposed from the first surface. The encapsulation is formed on the second surface, encapsulates the conductive pillars and the semiconductor element, and has opposing third and fourth surfaces, and the second terminals of the conductive pillars are exposed from the fourth surface. The semiconductor package is provided with the conductive pillars having fine pitches.

Abstract: An integrated circuit device includes a semiconductor substrate with a top surface, a bottom surface opposite the top surface and an intermediate portion positioned between the top and bottom surfaces. The device also includes interior substrate surfaces defined by at least one void extending from the bottom surface to the intermediate portion.