Abstract: An memory component includes a memory bank and a command interface to receive a read-modify-write command, having an associated read address indicating a location in the memory bank and to either access read data from the location in the memory bank indicated by the read address after an adjustable delay period transpires from a time at which the read-modify-write command was received or to overlap multiple read-modify-write commands. The memory component further includes a data interface to receive write data associated with the read-modify-write command and an error correction circuit to merge the received write data with the read data to form a merged data and write the merged data to the location in the memory bank indicated by the read address.

Abstract: A method and device for testing a memory array structure, and a non-transitory storage medium are provided. The method includes that: respective storage data corresponding to each preset test pattern is written into a to-be-tested memory array, the each preset test pattern being one of preset test patterns in a preset test pattern library; a row aggressing test is repeatedly performed on the to-be-tested memory array until a bit error occurs in the storage data, to obtain row aggressing test times, corresponding to the each preset test pattern, of the to-be-tested memory array, where the bit error characterizes that the storage data has changed; a target preset test pattern corresponding to the to-be-tested memory array is determined from the preset test pattern library based on the row aggressing test times; and an array structure of the to-be-tested memory array is determined based on the target preset test pattern.

Abstract: A transmitter is provided. The transmitter includes: an outer encoder configured to encode input bits to generate outer-encoded bits including the input bits and parity bits; a zero padder configured to generate a plurality of bit groups each of which is formed of a same number of bits, maps the outer-encoded bits to some of the bits in the bit groups, and pads zero bits to remaining bits in the bit groups, based on a predetermined shortening pattern, thereby to constitute Low Density Parity Check (LDPC) information bits; and an LDPC encoder configured to encode the LDPC information bits, wherein the remaining bits in which zero bits are padded include some of the bit groups which are not sequentially disposed in the LDPC information bits.

Abstract: A system and method are disclosed for formulating a sequential equivalency problem for fault (non)propagation with minimal circuit logic duplication by leveraging information about the location and nature of a fault. The system and method further apply formal checking to safety diagnoses and efficiently models simple and complex transient faults.

Abstract: In some examples, an integrated circuit comprises: a TDI input, a TDO output, a TCK input and a TMS input; a TAP state machine (TSM) having an input coupled to the TCK input, an input coupled to the TMS input, an instruction register control output, a TSM data register control (DRC) output, and a TSM state output; an instruction register having an input coupled to the TDI input, an output coupled to the TDO output, and a control input coupled to the instruction register control output of the TAP state machine; router circuitry including a TSM DRC input coupled to the TSM DRC output, a control DRC input coupled to the TSM state output, and a router DRC output; and a data register having an input coupled to the TDI input, an output coupled to the TDO output, and a data register DRC input coupled to the router DRC output.

Abstract: This application relates to the field of wireless communications technologies, and discloses an encoding method and apparatus, to improve accuracy of reliability calculation and ordering for polarized channels. The method includes: obtaining a first sequence used to encode K to-be-encoded bits, where the first sequence includes sequence numbers of N polarized channels, the first sequence is same as a second sequence or a subset of the second sequence, the second sequence comprises sequence numbers of Nmax polarized channels, and the second sequence is the sequence shown in Sequence Q11 or Table Q11, K is a positive integer, N is a positive integer power of 2, n is equal to or greater than 5, K?N, Nmax=1024; selecting sequence numbers of K polarized channels from the first sequence; and performing polar code encoding on K the to-be-encoded bits based on the selected sequence numbers of the K polarized channels.

Abstract: Error detection and correction (EDAC) logic of a memory subsystem may be monitored for error corrections, with the EDAC logic configured to use a first EDAC level. The number of error corrections made by the EDAC logic while using the first EDAC level during a time interval may be determined. The EDAC logic may be switched from using the first EDAC level to using a second EDAC level when the number of error corrections using the first EDAC level during the time interval exceeds a threshold.

Abstract: An apparatus includes a daughter die (DD) logic, and an arbitrator connected to the DD logic, and connected to an external testing device and a main die (MD) included in a multi-chip package (MCP). The apparatus further includes an enable logic configured to receive a message from the MD, based on the received message, determine whether the MD or the external testing device is enabled to access the DD logic, and based on the external testing device being determined to be enabled to access the DD logic, control the arbitrator to enable the external testing device to access the DD logic.

Abstract: A program method of a nonvolatile memory device including a plurality of memory cells, each storing at least two bits of data, includes performing a first program operation based on a plurality of program voltages having a first pulse width to program first page data into selected memory cells connected to a selected word line among the plurality of memory cells; and performing a second program operation based on a plurality of program voltages having a second pulse width different from the first pulse width to program second page data into the selected memory cells in which the first page data is programmed.

Abstract: A method for data transmission includes receiving a data stream from a host device, the data stream as received from the host device including encoded data, separating the encoded data in the data stream into first data blocks and second data blocks, and generating a first forward error correction (FEC) block. The first FEC block includes a first parity section and a first data section, the first parity section includes a first parity bit corresponding to the first data blocks and a second parity bit corresponding to the second data blocks, and the first data section includes the first data blocks and the second data blocks. The method further includes transmitting the first FEC block.

Abstract: A log of error events associated with a memory device is maintained. Each error event included in the log is associated with one of multiple physical locations within the memory device. A physical location within the memory device is identified for background scanning based on the log of error events. A background scan is performed on the physical location identified based on the log of error events.

Abstract: A synchronization circuit includes a first synchronizer, a second synchronizer, and selection circuitry. The first synchronizer is configured to synchronize a received signal to a clock signal. The second synchronizer is disposed in parallel with the first synchronizer and configured to synchronize the received signal to the clock signal. The selection circuitry is coupled to the first synchronizer and the second synchronizer. The selection circuitry is configured to provide an output value generated by the first synchronizer at an output terminal of the synchronization circuit based on the output value generated by the first synchronizer being the same as an output value generated by the second synchronizer.

Abstract: A method for managing transactions burstiness associated with a sequence of transactions generated in a test environment for verifying a Device Under Test (DUT) is disclosed. In some embodiments, the method includes processing a plurality of signals associated with a sequence of transactions. The method further includes generating a transactions burstiness signature representative of the sequence of transactions based on processing a set of signals from the plurality of signals. The method further includes analysing the transactions burstiness signature to identify at least one pattern of interest. The method further includes iteratively providing an input comprising at least one missing pattern of interest. The method further includes iteratively generating a subsequent sequence of transactions and a subsequent transactions burstiness signature associated with the subsequent sequence of transactions.

Abstract: The present disclosure includes a redundant array of independent NAND for a three dimensional memory array. A number of embodiments include a three-dimensional array of memory cells, wherein the array includes a plurality of pages of memory cells, a number of the plurality of pages include a parity portion of a redundant array of independent NAND (RAIN) stripe, and the parity portion of the RAIN stripe in each respective page comprises only a portion of that respective page.

Abstract: A memory system comprises a memory device including plural memory blocks, and a controller coupled to the memory device. The controller controls the memory device to read a first group including plural data items and a parity associated with the plural data items from first locations in the plural memory blocks. The controller generates a new parity when the plural data items and the parity include plural errors, substitute one of the plural errors with the new parity and another of the plural errors with dummy data. The controller controls the memory device to program a second group including the new parity and the dummy data in second locations in the plural memory blocks. The second locations are different from the first locations.

Abstract: Methods, systems, and devices for managing information protection schemes in memory systems are described. A memory device may dynamically select an information protection scheme from a set of information protection schemes. In some examples, the memory device may identify a quantity of defective blocks in each plane associated with a control. The memory device may then identify a quantity of planes that satisfy a block threshold. In some cases, the memory device may select an information protection scheme using the quantity of planes. The information protection scheme may be an example of a redundant array of independent nodes scheme, and may indicate a quantity of planes used in performing a protected write operation.

Abstract: An error recovery process provides for selecting a first recovery scheme for a decoding attempt on a first subset of a set of failed data blocks read from a data track; selecting a second different recovery scheme for a decoding attempt on a second subset of the set of failed data blocks read from the data track; and during a single revolution of the data track, performing operations to decode a first subset of the failed data blocks according to the first recovery scheme operations to decode the second subset of the failed data blocks according to the second different recovery scheme.

Abstract: Provided is a communication device, including: a transmission and reception unit that transmits and receives a signal with an other communication device; an error detection unit that detects an occurrence of an error by having the transmission and reception unit receive a preamble specifying a type of data to be transmitted next, and comparing a bit sequence of a signal received following the preamble to a bit sequence that should be transmitted for the type specified for transmission by the preamble; and a conflict avoidance unit that, if the occurrence of an error is detected by the error detection unit, instructs the transmission and reception unit to transmit a clock corresponding to a certain number of bits following the preamble, and then transmit an abort signal giving an instruction to terminate communication partway through.

Abstract: An error correction system includes M decoding units, each configured to perform decoding on the X first operation codes and the Y second operation codes; the decoding unit includes: a decoder, configured to receive the X first operation codes and output N first decoded signals, each corresponding to a respective one bit of the N data; a first AND gate unit, configured to receive and perform a logical AND operation on Z selected operation codes; an NOR gate unit, configured to receive and perform a logical NOR operation on (Y?Z) unselected operation codes; and N second AND gate units, each having an input terminal connected to an output terminal of the first AND gate unit, an output terminal of the NOR gate unit and one of the first decoded signals.

Abstract: Disclosed herein are method, system, and storage-medium embodiments for single-pass diagnosis of multiple chain defects in circuit-design testing. Embodiments include processor(s) to select a plurality of a scan chains in a circuit under test and determine presence of at least a first defect in the first scan chain, and a second defect in the first scan chain or in the second scan chain. The plurality of scan chains may include specific scan chains that each have respective pluralities of scan cells. Processor(s) may map the first defect to a first range of first scan cells, and the second defect to a second range of second scan cells. Based at least in part on a failing capture-pattern set, processor(s) may locate the first defect in a first scan cell of the first range, and the second defect in a second scan cell of the first range or the second range.