Abstract: A processing device determines a duration for executing a portion of an erase operation based on a plurality of execution times of erase operations performed on a memory device. The processing device executes the portion of the erase operation. Responsive to detecting expiration of the duration for executing the erase operation, the processing logic executes an erase suspend operation to suspend the erase operation. Responsive to detecting completion of the erase suspend operation, the processing logic executes one or more commands. The processing device further executes an erase resume operation to resume the erase operation on the memory device.

Abstract: A sense amplifier, a memory and a method for controlling the sense amplifier are provided. The sense amplifier includes: an amplification module configured to read data in a storage unit on a first or second bit line; a control module electrically connected to the amplification module. When data in the storage unit on the first bit line is read, in a first amplification phase of the sense amplifier, the control module configures the amplification module to include a first current mirror structure and connects a mirror terminal of the first current mirror structure to the second bit line; when data in the storage unit on the second bit line is read, in the first amplification phase of the sense amplifier, the control module configures the amplification module to include a second current mirror structure and connects a mirror terminal of the second current mirror structure to the first bit line.

Abstract: Apparatuses, systems, and methods for read clock timing alignment in a stacked memory. An interface die provides a read clock to a core die. The core die includes a serializer which generates data with timing based on the read clock and an adjustable delay circuit which provides a delayed read clock back to the interface die. The interface die outputs the data with timing based on the delayed read clock received from the core die. In this way, the read clock passes along a return clock path from the interface die, through a delay circuit of the core die and back to the interface die before controlling data output timing. Each core die may adjust the timing of the delay of the read clock in order to better align the read clock with the timing of data provided from that die.

Abstract: A method for storing data comprises maintaining an address table for a memory space containing volatile memory and nonvolatile memory space. The nonvolatile memory space includes both multi-level cell (MLC) space and single level cell (SLC) space and the volatile memory includes a random access volatile memory element. An address table maps logical and physical addresses adaptable to the system by the address table. The mapping is performed as necessitated by the system to maximize lifetime maps data in at least one of volatile or nonvolatile memories. Storing received data within a controller memory associated with the at least one controller. Controlling access of the MLC and SLC nonvolatile memory elements and the random access volatile memory element for storage of the received data.

Abstract: A semiconductor device includes a ferroelectric field-effect transistor (FeFET), wherein the FeFET includes a substrate; a source region in the substrate; a drain region in the substrate; and a gate structure over the substrate and between the source region and the drain region. The gate structure includes a gate dielectric layer over the substrate; a ferroelectric film over the gate dielectric layer; and a gate electrode over the ferroelectric film.

Abstract: Systems and method are provided for operating a multi-array memory that includes a left memory array and a right memory array of a memory bank. A command is received at memory input pins. A signal representative of the command is propagated to an array control inhibitor. An array inhibit command is received on one or more other pins of the memory and provided to the array control inhibitor. The array control inhibitor is used to prevent arrival of the command to one of the left memory array and the right memory array based on the array inhibit command.

Abstract: A capacitor string structure, a memory device and a charge pump circuit thereof are provided. The capacitor string structure includes a plurality of conductive plates. The conductive plates are disposed in the memory device. The conductive plates are stacked to each other, and respectively form a plurality of word lines of the memory device, where two neighbored conductive plates form a capacitor.

Abstract: Methods, systems, and devices for deck-level signal development cascodes are described. A memory device may include transistors that support both a signal development and decoding functionality. In a first operating condition (e.g., an open-circuit condition), a transistor may be operable to isolate first and second portions of an access line based on a first voltage applied to a gate of the transistor. In a second operating condition (e.g., a signal development condition), the transistor may be operable to couple the first and second portions of the access line and generate an access signal based on a second voltage applied to the gate of the transistor. In a third operating condition (e.g., a closed-circuit condition), the transistor may be operable to couple the first and second portions of the access line based on applying a third voltage greater than the second voltage to the gate of the transistor.

Abstract: Thin-film Ferroelectric field-effect transistor (FeFET) may be organized as 3-dimensional NOR memory string arrays. Each 3-dimensional NOR memory string array includes a row of active stack each including a predetermined number of active strips each provided one on top of another and each being spaced apart from another by an isolation layer. Each active strip may include a shared source layer and a shared drain layer shared by the FeFETs provided along the active strip. Data storage in the active strip is provided by ferroelectric elements that can individually electrically set into one of two polarization states. FeFETs on separate active strips may be configured for read, programming or erase operations in parallel.

Abstract: A flash controller for managing at least one MLC non-volatile memory module and at least one SLC non-volatile memory module. The flash controller is adapted to determine if a range of addresses listed by an entry and mapped to said at least one MLC non-volatile memory module fails a data integrity test. In the event of such a failure, the controller remaps said entry to an equivalent range of addresses of said at least one SLC non-volatile memory module. The flash controller is further adapted to determine which of the blocks in the MLC and SLC non-volatile memory modules are accessed most frequently and allocating those blocks that receive frequent writes to the SLC non-volatile memory module and those blocks that receive infrequent writes to the MLC non-volatile memory module.

Abstract: A memory circuit includes a first memory array including first memory cells wherein a plurality of first word lines is coupled with a plurality of rows of first memory cells in a first segment of the first memory array, and a plurality of second word lines is coupled with the plurality of rows of first memory cells in a second segment of the first memory array. The memory circuit also includes a read circuit configured to retrieve data from the first memory cells of the first memory array and a computation circuit configured to perform a matrix computation by combining first data retrieved from the first memory cells of the first segment with second data retrieved from the first memory cells of the second segment.

Abstract: Apparatuses, systems, and methods for data timing alignment in stacked memory. The memory a number of core dice stacked on an interface die. The core and interface die each include adjustable delay circuits along each of a delay and native path. A state machine operates interface and core aligner control circuits to set values of the delay(s) in the interface and core dice respectively. The state machine may initialize the delays and then enter a maintenance state where averaging is used to determine when to adjust the delay in the core dice. If an overflow or underflow condition is met, the state machine may cycle between adjusting the delay in the interface die and adjusting the delays in the core dice without averaging until the overflow and underflow conditions are no longer met and the maintenance state is returned to.

Abstract: Memories are provided. A memory includes a plurality of ferroelectric random access memory (FRAM) cells arranged in a first memory array, and a plurality of static random access memory (SRAM) cells arranged in a second memory array. The first memory array and the second memory array share the same bus. Each of the FRAM cells includes a ferroelectric field-effect transistor (FeFET). A gate structure of the FeFET includes a gate electrode over a channel of the FeFET, and a ferroelectric layer over the gate electrode.

Abstract: A semiconductor memory device includes an array of memory cells arranged in a plurality of rows and columns, with each memory cell including a plurality of bit cell transistors. The semiconductor memory device further includes a plurality of write assist circuits, including one or more write assist circuits within each column of the array of memory cells, each write assist circuit configured to provide a core voltage to memory cells within the same column and to reduce the core voltage during a write operation. The array of memory cells and the plurality of write assist circuits have a common semiconductor layout.

Abstract: A read-write conversion circuit, a read-write conversion circuit driving method, and a memory are provided. The read-write conversion circuit includes a first precharge circuit, a positive feedback circuit, a second precharge circuit, a fourth switch unit, a sixth switch unit, a seventh switch unit, an eighth switch unit, a tenth switch unit, an eleventh switch unit, a twelfth switch unit, a thirteenth switch unit, a fourteenth switch unit, and a fifteenth switch unit. In the read-write conversion circuit, corresponding signals can be read from a third signal terminal and a fourth signal terminal by using only one of a first signal terminal or a second signal terminal in a signal read stage, and corresponding signals can be written to the first signal terminal and the second signal terminal by using only one of the third signal terminal or the fourth signal terminal in a signal write stage.

Abstract: A processing device determines a target bit error rate corresponding to a point of a first programming voltage distribution level corresponding to memory cells of a memory sub-system and a second programming voltage distribution corresponding to the memory cells of the memory sub-system. An offset voltage level corresponding to the point at the target bit error rate is selected. A first portion of a first group of the memory cells in the first programming voltage distribution level is programmed at a threshold voltage level to set a first embedded data value. A second portion of a second group of the memory cells in the second programming voltage distribution level is programmed at the threshold voltage level offset by the offset voltage level to set a second embedded data value.

Abstract: A signal generation circuit includes: a clock circuit configured to receive a flag signal and generate a clock signal; a control circuit configured to generate a control circuit; and a generation circuit connected to both the clock circuit and control circuit and configured to receive the clock signal, the control signal, and the flag signal and generate a target signal, wherein when the flag signal changes from a first level to a second level, the target signal changes from a third level to a fourth level, and after the target signal is maintained at the fourth level for a target duration, the target signal changes from the fourth level to the third level; and the generation circuit is further configured to determine the target duration according to the clock signal and control signal.

Abstract: Embodiments provide a write operation circuit, a semiconductor memory, and a write operation method. The write operation circuit includes: a data determination module that determines whether to flip the current input data according to the previous depending on the number of changed data bits between the previous input data and the current input data of the semiconductor memory so as to generate a flip flag data and an intermediate data; a data buffer module that is used to determine an initial state of a global bus according to an enable signal and the intermediate data; and a data receiving module that receives the global bus data on the global bus, and receives the flip flag data through the flip flag signal line, and that is used to decode the global bus data according to the flip flag data, and write the decoded data into a memory block of the semiconductor.

Abstract: A semiconductor device may include a word line, a bit line crossing the word line, and a memory cell coupled to the word line and the bit line to receive an electrical signal to control the memory cell and including a switching material layer and an oxidation-reduction reversible material layer that is in contact with the switching material layer to allow for either oxidation reaction or reduction reaction to occur in response to different amplitudes and different polarities of the electrical signal, wherein the oxidation-reduction reversible material layer and the switching material layer responds to a first threshold voltage and a first polarity of the electrical signal to generate an oxidation interface between the switching material layer and the oxidation-reduction reversible material layer, and responds to a second threshold voltage and a second polarity of the electrical signal to reduce the generation of the oxidation interface.

Abstract: A memory device includes a command interface configured to receive a two-cycle command from a host device via multiple command address bits. The memory device also includes a command decoder configured to decode a first portion of the multiple command address bits in a first cycle of the two-cycle command. The command decoder includes mask circuitry. The mask circuitry includes mask generation circuitry configured to generate a mask signal. The mask circuitry also includes multiplexer circuitry configured to apply the mask signal to block the command decoder from decoding a second portion of the multiple command address bits in a second cycle of the two-cycle command.