Abstract: A method includes: receiving a first result obtained by performing BIP check on a sent first to-be-checked bit stream; performing BIP check on a received second to-be-checked bit stream to obtain a second result, where the second to-be-checked bit stream is a bit stream received by a receiving device after the first to-be-checked bit stream is transmitted; detecting a type of a control block in the second to-be-checked bit stream, and determining a third result based on impact of the type of the control block on a BIP check result; comparing the first result, the second result, and the third result; and if the first result is different from the second result, the first result is different from the third result, and the second result is different from a predetermined result, determining that a bit error occurs when the first to-be-checked bit stream is transmitted.

Abstract: A method of operating a memory system including a memory device, including in response to a write request of a host, storing write data and a physical address received from the host in a buffer; performing a write operation on the memory device based on the write data and the physical address; based on a write error corresponding to the write data occurring, asynchronously providing the host with error occurrence information; and providing the host with the write data having the write error and information used for a recovery from the write error.

Abstract: Embodiments of this application disclose provides a low density parity check (LDPC) channel encoding method for use in a wireless communications system. A communication device encodes an input bit sequence by using a LDPC matrix, to obtain an encoded bit sequence for transmission. The LDPC matrix is obtained based on a lifting factor Z and a base matrix. Embodiments of the application provide eight particular designs of the base matrix. The encoding method provided in the embodiments of the application can be used in various communications systems including the fifth generation (5G) telecommunication systems, and can support various encoding requirements for information bit sequences with different code lengths.

Abstract: An integrated circuit includes a built-in-self-test circuit that generates output test signals and a circuit tested by the built-in-self-test circuit. The circuit tested by the built-in-self-test circuit generates test results in response to the output test signals during a test. Pipeline register circuits are coupled together to form a signal path for transmitting the output test signals from the built-in-self-test circuit to the circuit tested by the built-in-self-test circuit. A functional circuit block is located in a reserved die area of the integrated circuit. The signal path is routed around the reserved die area to the circuit tested by the built-in-self-test circuit. At least a subset of the pipeline register circuits are located adjacent to at least two sides of the reserved die area.

Abstract: Embodiments of the present invention disclose methods and apparatuses for correcting errors in data stored in a solid state device. The solid state device may have a plurality of bits stored in multi-level memory cells. The method may include identifying one or more errors in a plurality of memory cells. The method may further include converting the erroneous cells to erasures. The method may further include correcting the one or more erasures.

Abstract: A data reading method is provided. The method includes: according to a first read command received from a host system, sending a first read command sequence, which is configured to instruct a reading of a plurality of physical units of the rewritable non-volatile memory module to obtain first data; identifying data stored in at least one first physical unit in the physical units as uncorrectable data according to the first data; according to a second command received from the host system, sending a second read command sequence, which is configured to instruct a reading of the physical units of the rewritable non-volatile memory module to obtain second data; generating response data corresponding to the second read command according to the second data and padding data, which is configured to replace the data read from the at least one first physical unit; and transmitting the response data to the host system.

Abstract: A memory system includes a nonvolatile memory, a memory controller included in a first package, and a memory interface circuit included in a second package that is different from the first package. The memory controller includes an encoder for performing encoding for error correction. The memory controller is configured to encode first data into second data using the encoder, and program the second data into a location in the nonvolatile memory. The memory interface circuit is interposed between the memory and the memory controller. The memory interface circuit includes a decoder for performing decoding for error correction. The memory interface circuit is configured to read third data from a first location in the nonvolatile memory, diagnose the third data by decoding the third data using the decoder, and convey a result of the diagnosis to the memory controller.

Abstract: Methods and apparatus are disclosed for implementing principal component analysis (PCA) within a non-volatile memory (NVM) die of solid state drive (SSD) to reduce the dimensionality of machine learning data before the data is transferred to other components of the SSD, such as to a data storage controller equipped with a machine learning engine. The machine learning data may include, for example, training images for training an image recognition system in which the SSD is installed. In some examples, the on-chip PCA components of the NVM die are configured as under-the-array or next-to-the-array components. In other examples, one or more arrays of the NVM die are configured as multiplication cores for performing PCA matrix multiplication. In still other aspects, multiple NVM dies are arranged in parallel, each with on-chip PCA components to permit parallel concurrent on-chip processing of machine learning data.

Abstract: A storage device includes a nonvolatile memory device that includes a plurality of pages, each of which includes a plurality of memory cells, and a controller that receives first write data expressed by 2m states (m being an integer greater than 1) from an external host device. The controller in a first operating mode shapes the first write data to second write data, which are expressed by “k” states (k being an integer greater than 2) smaller in number than the 2m states, performs first error correction encoding on the second write data to generate third write data expressed by the “k” states, and transmits the third write data to the nonvolatile memory device for writing at a selected page from the plurality of pages.

Abstract: Techniques for storage management involve: detecting a trigger for an adjustment of a redundant level for a set of RAIDs. Each of the set of RAIDs includes one or more RAID extents. Each RAID extent is formed by a plurality of storage extents from a set of storage extents. The set of storage extents is obtained by dividing a plurality of storage disks into storage extents. The plurality of storage extents are located in different storage disks of the plurality of storage disks. The techniques further involve: in response to detecting the trigger, selecting, from the set of RAIDs, a target RAID for which the redundant level is to be adjusted. The techniques further involve: adjusting the redundant level of the target RAID from a first redundant level to a second redundant level. Such techniques can improve the performance of a RAID storage system.

Abstract: A semiconductor storage apparatus capable of realizing continuous read with high speed is provided. A continuous read method of a NAND flash memory includes: a step for holding setting information related to a read time of a memory cell array in continuous read in a register; a step for reading data from the memory cell array in the read time based on the setting information; a step for holding the read data in a latch (L1) and a latch (L2); and a step for outputting the data held synchronously with an external clock signal corresponding to the setting information.

Abstract: A method is provided for detecting a cold boot attack in a data processing system. The data processing system includes a processor, a memory with ECC, and a monitor circuit. In the method, during a boot process of the data processing system, the monitor circuit counts read and write accesses to the memory and maintains a count of the number of errors in the memory detected by the ECC. The read and write access count and the error count are used to detect suspicious activity that may indicate a cold boot attack on the memory. A data processing system that implements the method is also provided.

Abstract: Error correcting memory systems and methods of operating the memory systems are disclosed. In some embodiments, a memory system includes: a data memory; an ECC memory; and a data scrubbing circuit electrically coupled to the ECC memory and the data memory. The data scrubbing circuit may be configured to, in response to receiving a scrub data command, correct an error in the data memory. A code word length used to correct the error may be longer than a word length used during normal access of the data memory. In some embodiments, a memory system includes a first memory circuit associated with a first bit error rate and a second memory circuit associated with a second bit error rate. In some embodiments, a memory system includes an error correctable multi-level cell (MLC) array.

Abstract: A memory device, such as a MRAM device, includes a plurality of memory macros, where each includes an array of memory cells and a first ECC circuit configured to detect data errors in the respective memory macro. A second ECC circuit that is remote from the plurality of memory macros is communicatively coupled to each of the plurality of memory macros. The second ECC circuit is configured to receive the detected data errors from the first ECC circuits of the plurality of memory macros and correct the data errors.

Abstract: A method and apparatus for allocation of back-end (BE) logic resources between NVM sets. When a controller detects that an NVM set is in an idle state, it deallocates the BE logic from the originally assigned NVM set and provides the BE logic resource to another NVM set. An NVM set controller matrix maps interconnections between the BE logic resource and the new NVM set to enable use of the BE logic resource and the new NVM set. When a new command arrives for the originally assigned NVM set, the BE logic resources is re-allocated to the originally assigned NVM set.

Abstract: A method and/or system for checking the bus/interface between a host and a memory system during memory access operations includes a memory system having one or more of the data memory devices and a spare memory device; providing a bus/interface between a host and the memory system; selecting information on a per memory device basis to associate with a spare memory device; disassociating the selected information from the one or more data memory devices and associating the selected information with the spare memory device; adding Cyclical Redundancy Check (CRC) code to the one or more data memory devices from which the selected information was disassociated; transferring the CRC code and information over the bus and interface between the host and the memory system; and checking the bus interface with the CRC code added to the one or more data memory devices.

Abstract: A memory device has multiple nonvolatile (NV) memory arrays that collectively store a block of data, with each array to store a portion of the data block. A selected NV memory array stores a write count for the block of data. In response to a write command, the NV memory arrays that store data perform an internal pre-write read. The selected NV memory array that stores the write count will perform a pre-write read of the write count, increment the write count internally to the selected NV memory array, and write the incremented write count back to the selected NV memory array.

Abstract: A system is provided for performing error correction in memory. During operation, the system can receive a memory access request from a host processor. The system can then compare a memory address specified in the memory access request with a set of entries in an error correction code (ECC) mapping table. In response to the system determining that the memory address corresponds to at least one entry in the ECC mapping table, the system may determine, based on value in the counter field, whether the memory address belongs to a first portion or a second portion of the address range specified in the ECC mapping table entry. The system can then select a current ECC mode when the memory address belongs to the first portion; and select a previous ECC mode when the memory address belongs to the second portion. The system may then process the memory access request based on the selected ECC mode.

Abstract: A memory system includes a memory device including memory cells, and a controller that performs a write operation, a read operation, and a check operation on the memory device. During the check operation, the controller controls the memory device to read check data from target memory cells of the memory cells by using a check level, compares the check data with original data stored in the target memory cells, and determines a reliability of the target memory cells or the check data based on a result of the comparison.

Abstract: A non-volatile computer data storage programming system includes a scan chain modification configured to receive a default model defining a scan chain of an industry standardized device. A controller is in signal communication with the scan chain modification system, and is configured to program an industry standardized device. A non-volatile computer data storage device is configured to receive data from the industry standardized device. The scan chain modification system modifies the default model to generate a new model including a reduced scan chain, and the controller programs the industry standardized device based on the new model such that the industry standardized device is programmed with the reduced scan chain.