Patents Examined by Guy J. Lamarre
-
Patent number: 11671116Abstract: Embodiments of this application disclose provides a low density parity check (LDPC) channel encoding method for use in a wireless communications system. A communication device encodes an input bit sequence by using a LDPC matrix, to obtain an encoded bit sequence for transmission. The LDPC matrix is obtained based on a lifting factor Z and a base matrix. Embodiments of the application provide eight particular designs of the base matrix. The encoding method provided in the embodiments of the application can be used in various communications systems including the fifth generation (5G) telecommunication systems, and can support various encoding requirements for information bit sequences with different code lengths.Type: GrantFiled: February 2, 2022Date of Patent: June 6, 2023Assignee: Huawei Technologies Co., Ltd.Inventors: Jie Jin, Ivan Leonidovich Mazurenko, Aleksandr Aleksandrovich Petiushko, Chaolong Zhang
-
Patent number: 11669395Abstract: A memory system includes; a memory device, a memory controller including a first interface, a second interface, and a first data processor having a first error correction code (ECC) engine, and a field programmable gate array (FPGA) including a third interface connected to the first interface, a fourth interface connected to the second interface, a fifth interface connected to an external host, and a second data processor having a second ECC engine. The memory controller may configure a normal write operation path or highly reliable write operation path.Type: GrantFiled: October 12, 2021Date of Patent: June 6, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Dong-Min Shin, Hong-Rak Son
-
Patent number: 11662951Abstract: A Solid State Drive (SSD) is disclosed. The SSD may include an interface to receive read and write requests from an application on a host. Storage, including at least one chip, may store data. An SSD controller may process the read and write requests from the application. A configuration module may configure the SSD. Storage may include a reliability table which may include entries specifying configurations of the SSD and reliabilities for those configurations.Type: GrantFiled: March 22, 2022Date of Patent: May 30, 2023Inventors: Yang Seok Ki, Rekha Pitchumani
-
Patent number: 11662904Abstract: Methods and apparatus are disclosed for implementing principal component analysis (PCA) within a non-volatile memory (NVM) die of solid state drive (SSD) to reduce the dimensionality of machine learning data before the data is transferred to other components of the SSD, such as to a data storage controller equipped with a machine learning engine. The machine learning data may include, for example, training images for training an image recognition system in which the SSD is installed. In some examples, the on-chip PCA components of the NVM die are configured as under-the-array or next-to-the-array components. In other examples, one or more arrays of the NVM die are configured as multiplication cores for performing PCA matrix multiplication. In still other aspects, multiple NVM dies are arranged in parallel, each with on-chip PCA components to permit parallel concurrent on-chip processing of machine learning data.Type: GrantFiled: December 8, 2021Date of Patent: May 30, 2023Assignee: Western Digital Technologies, Inc.Inventors: Won Ho Choi, Yongjune Kim, Martin Lueker-Boden
-
Patent number: 11656936Abstract: Disclosed is a system that comprises a memory device and a processing device, operatively coupled with the memory device, to perform operations that include, determining that a value of a write counter associated with the memory device satisfies a first threshold criterion. The operations performed by the processing device further include, responsive to determining that the value of the write counter satisfies the first threshold criterion, identifying a first memory unit and a second memory unit of the memory device, the second memory unit comprising one or more memory cells adjacent to one or more memory cells of the first memory unit. The operations performed by the processing device further include performing a read operation on the second memory unit to determine a set of failed bit count statistics corresponding to a plurality of codewords of the second memory unit.Type: GrantFiled: September 7, 2021Date of Patent: May 23, 2023Assignee: Micron Technology, Inc.Inventors: Zhenming Zhou, Tingjun Xie, Charles See Yeung Kwong
-
Patent number: 11652496Abstract: A memory system of an embodiment includes a non-volatile memory and a memory controller. The memory controller executes a first decoding process of reading data encoded by an error correction code from the non-volatile memory and repeatedly executing bounded distance decoding on a symbol group protected by each of component codes included in N component code groups; executes a second decoding process of repeatedly executing decoding exceeding a bounded distance in units of component codes for an error symbol group determined to include an error due to a syndrome of a component code included in the N component code groups when the first decoding process fails; executes a rollback process when the first decoding process executed after the second decoding process fails; and changes a parameter used in the second decoding process and further executes the second decoding process when it is detected that the second decoding process is not progressed.Type: GrantFiled: September 1, 2021Date of Patent: May 16, 2023Assignee: Kioxia CorporationInventors: Yuta Kumano, Hironori Uchikawa
-
Patent number: 11645150Abstract: Apparatuses, systems, and methods for error correction. A memory device may have a number of memory cells each of which stores a bit of information. One or more error correction code (ECC) may be used to determine if the bits of information contain any errors. To mitigate the effects of failures of adjacent memory cells, the information may be divided into a first group and a second group, where each group contains information from memory cells which are non-adjacent to other memory cells of that group. Each group of information may include data bits and parity bits used to correct those data bits. For example, as part of a read operation, a first ECC circuit may receive information from even numbered memory cells, while a second ECC circuit may receive information from odd numbered memory cells.Type: GrantFiled: October 13, 2021Date of Patent: May 9, 2023Assignee: MICRON TECHNOLOGY, INC.Inventors: Toru Ishikawa, Minari Arai
-
Patent number: 11640335Abstract: The controller is configured to receive commands from a host device through a PCIe bus having a MAC, send data to the host device through the PCIe bus, and execute a function level reset (FLR) command. The controller includes a direct memory access (DMA) unit and either a drain unit or a drain and drop unit coupled between the DMA and the PCIe bus. The units are configured to prevent transactions associated with the FLR command to pass from the DMA to the MAC during execution of the FLR command, where the preventing transactions comprises receiving a request from the DMA, storing the request in a pipe, removing the request from the pipe, and providing a response to the DMA without delivering the request to the MAC. The drain and drop unit is configured to drop a MAC generated response.Type: GrantFiled: June 15, 2021Date of Patent: May 2, 2023Assignee: Western Digital Technologies, Inc.Inventors: Erez Frank, Shay Benisty, Amir Segev
-
Patent number: 11637571Abstract: A transmitter is provided. The transmitter includes: a low density parity check (LDPC) encoder configured to encode input bits to generate an LDPC codeword including the input bits and parity bits; a repeater configured to select at least a part of bits constituting the LDPC codeword and add the selected bits after the input bits; and a puncturer configured to puncture at least a part of the parity bits.Type: GrantFiled: May 12, 2021Date of Patent: April 25, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Se-ho Myung, Kyung-joong Kim, Hong-sil Jeong
-
Patent number: 11630726Abstract: Embodiments of the present disclosure relate to a memory system and an operating method thereof. According to the embodiments of the present disclosure, the memory system may completely scan each of one or more target memory blocks among the plurality of memory blocks, once in each scan period to detect an error in data stored in the corresponding target memory block and may block an attempted second scan of each target memory block in a scan period in which the corresponding target memory block has already been scanned until the scan period is completed.Type: GrantFiled: March 10, 2021Date of Patent: April 18, 2023Assignee: SK hynix Inc.Inventors: Tae Ha Kim, Jee Yul Kim, Hyeong Ju Na, Kwan Su Lee
-
Patent number: 11625295Abstract: A memory device is set to a performance mode. Data item is received. The data item in a page of a logical unit of the memory device associated with a fault tolerant stripe is stored. A redundancy metadata update for the fault tolerant stripe is delayed until a subsequent media management operation.Type: GrantFiled: May 10, 2021Date of Patent: April 11, 2023Assignee: Micron Technology, Inc.Inventors: Seungjune Jeon, Zhenming Zhou, Jiangli Zhu
-
Patent number: 11625173Abstract: A solid state drive (SSD) device includes: non-volatile memory, and volatile memory associated with an SSD device controller. In response to determining that the SSD device is to transition to a power saving mode, information is transferred from the volatile memory to a host memory of a host computer via a communication interface, and the at least some of the volatile memory is transitioned to an OFF state. In response to determining that the SSD device is to transition from the power saving mode to a normal operating mode, the at least some of the volatile memory of the SSD device is transitioned to an ON state in which the at least some of the volatile memory is capable of retaining data, and the information from the host memory is transferred to the volatile memory of the SSD device via the communication interface.Type: GrantFiled: September 8, 2021Date of Patent: April 11, 2023Assignee: Marvell Asia Pte LtdInventor: Christophe Therene
-
Patent number: 11609814Abstract: A memory system includes a semiconductor storage device and a memory controller including a storage circuit that stores correction value for read voltages in association with the word line, and a control circuit that reads data from the memory cells, performs a correction operation on the read data to determine a number of error bits therein, determines the correction value for each read voltage based on the number of error bits and a ratio of a lower tail fail bit count and an upper tail fail bit count, and stores the correction values for the read voltages in the storage circuit. The lower tail fail bit count represents the number of memory cells in a first state having threshold voltages of an adjacent state, and the upper tail fail bit count represents the number of memory cells in the adjacent state having threshold voltages of the first state.Type: GrantFiled: July 28, 2021Date of Patent: March 21, 2023Assignee: Kioxia CorporationInventors: Kengo Kurose, Masanobu Shirakawa
-
Patent number: 11609912Abstract: A method includes generating a plurality of parity blocks from a plurality of lines of data blocks. The plurality of lines of data blocks are stored in data sections of memory of a cluster of computing devices of the computing system by distributing storage of individual data blocks of the plurality of lines of data blocks among unique data sections of the cluster of computing devices. The plurality of parity blocks are stored in parity sections of memory of the cluster of computing devices by distributing storage of parity blocks of the plurality of parity blocks among unique parity sections of the cluster of computing devices.Type: GrantFiled: February 24, 2022Date of Patent: March 21, 2023Assignee: Ocient Inc.Inventors: George Kondiles, Jason Arnold
-
Patent number: 11604598Abstract: A non-volatile solid-state storage is provided. The non-volatile solid state storage includes a non-volatile random access memory (NVRAM) addressable by a processor external to the non-volatile solid state storage. The NVRAM is configured to store user data and metadata relating to the user data. The non-volatile solid state storage includes a flash memory addressable by the processor. The flash memory is configured to store the user data responsive to the processor directing transfer of the user data from the NVRAM to the flash memory.Type: GrantFiled: July 19, 2021Date of Patent: March 14, 2023Assignee: PURE STORAGE, INC.Inventors: Brian T. Gold, Ronald Karr
-
Patent number: 11604692Abstract: A field programmable gate array (FPGA) with an automatic error detection and correction function for programmable logic modules includes an error checking and correction device. A check code generation circuit in the error checking and correction device performs error correcting code (ECC) encoding according to input data of corresponding programmable logic registers to generate a check code, and refreshes and writes the check code into a check code register according to a clock signal. A check circuit checks outputs of the programmable logic registers and check code registers to generate syndromes for implementing checking. A decoding circuit generates upset signals corresponding to the syndromes according to a trigger enable pulse of a trigger circuit to control a fault register to directly and asynchronously upset content to correct the error. A circuit area is greatly reduced by using the FPGA, thereby improving a degree of integration of the circuit.Type: GrantFiled: December 3, 2021Date of Patent: March 14, 2023Assignee: WUXI ESIONTECH CO., LTD.Inventors: Yueer Shan, Yanfeng Xu, Jicong Fan, Zhan Jing
-
Patent number: 11599417Abstract: An error correction system is disclosed. The error correction system is applied to a storage system. The error correction system generates X first operation codes, Y second operation codes and a third operation code based on the storage system. The error correction system includes an error state determining circuit and M decoding circuits. The error state determining circuit is configured to identify a current error state. When a plurality of pieces of data have a 1-bit error, the M decoding circuits are configured to execute decoding processing on the X first operation codes and the Y second operation codes, to obtain whether there is erroneous data in the bytes corresponding to the decoding circuits and locate a bit to which the erroneous data belongs.Type: GrantFiled: January 24, 2022Date of Patent: March 7, 2023Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.Inventors: Kangling Ji, Jun He, Yuanyuan Gong, Zhan Ying
-
Patent number: 11593196Abstract: A method and/or system for checking the bus/interface between a host and a memory system during memory access operations includes a memory system having one or more of the data memory devices and a spare memory device; providing a bus/interface between a host and the memory system; selecting information on a per memory device basis to associate with a spare memory device; disassociating the selected information from the one or more data memory devices and associating the selected information with the spare memory device; adding Cyclical Redundancy Check (CRC) code to the one or more data memory devices from which the selected information was disassociated; transferring the CRC code and information over the bus and interface between the host and the memory system; and checking the bus interface with the CRC code added to the one or more data memory devices.Type: GrantFiled: December 1, 2021Date of Patent: February 28, 2023Assignee: International Business Machines CorporationInventors: Kevin M. Mcilvain, Warren E. Maule, Stephen Glancy, Kyu-hyoun Kim, Edgar R. Cordero
-
Patent number: 11586502Abstract: A method is described that includes processing, by a memory subsystem, a read memory command that is addressed to a first die of a memory device. The memory subsystem determines whether processing the read memory command failed to correctly read user data from the first die and, in response to determining that processing the read memory command failed to correctly read user data from the first die, determines whether the first die has failed. In response to determining that the first die has failed, the memory subsystem performs an abbreviated error recovery procedure to successfully perform the read memory command instead of a full error recovery procedure.Type: GrantFiled: May 19, 2021Date of Patent: February 21, 2023Assignee: MICRON TECHNOLOGY, INC.Inventors: Boon Leong Yeap, Matthew Covalt
-
Patent number: 11581905Abstract: Systems and methods of communicating using asymmetric polar codes are provided which overcome the codeword length constraints of systems and methods of communicating that use traditional polar codes. Used herein, asymmetric polar codes refers to a polarizing linear block code of any arbitrary length that is constructed by connecting together constituent polar codes of unequal length. Asymmetric polar codes may be known by other names. In comparison to conventional solutions for variable codeword length, asymmetric polar codes may provide more flexibility, improved performance, and/or reduced complexity of decoding, encoding, or code design. The system and method provide a flexible, universal, and well-defined coding scheme and to provide sound bit-error correction performance and low decoding latency (compared with current length-compatible methods which can be used with current hardware designs).Type: GrantFiled: June 30, 2021Date of Patent: February 14, 2023Assignees: Huawei Technologies Co., Ltd., The Royal Institution for the Advancement of Learning/McGill UniversityInventors: Warren Jeffrey Gross, Adam Christian Cavatassi, Thibaud Tonnellier, Yiqun Ge