Patents Examined by Hoang-Quan Ho
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Patent number: 10957659Abstract: A method for making a photovoltaic device is provided that includes the steps of providing a silicon substrate having a complementary metal-oxide semiconductor (“CMOS”); bonding a first layer of silicon oxide to a second layer of silicon oxide wherein the bonded layers are deposited on the silicon substrate; and forming a III-V photovoltaic cell on a side of the bonded silicon oxide layers opposite the silicon substrate, wherein when the III-V photovoltaic cell is exposed to radiation, the III-V photovoltaic cell generates a current that powers a memory erasure device to cause an alteration of a memory state of a memory cell in an integrated circuit.Type: GrantFiled: May 23, 2019Date of Patent: March 23, 2021Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Kenneth Rodbell, Davood Shahrjerdi
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Patent number: 10930896Abstract: The present invention provides a package method of an OLED element and an OLED package structure. In the package method of the OLED element, according to the present invention, by manufacturing a circle of the retaining wall at the periphery of the OLED element, and then forming the laminated film covering the OLED element in the region surrounded by the retaining wall, and the laminated film comprises the few first barrier layers and the few buffer layers which are alternately stacking, and ultimately, forming the second barrier layer which completely covers the buffer layer and the top of the retaining wall on the outermost buffer layer of the laminated film, the OLED package structure of extremely strong sealing can be obtained. In the package method, a protective shield of extremely strong sealing for the OLED element is formed with the retaining wall and the outermost second barrier layer.Type: GrantFiled: August 18, 2020Date of Patent: February 23, 2021Assignee: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventor: Jiajia Qian
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Patent number: 10910582Abstract: A light emitting display device and a method of manufacturing a light emitting display device, the device including a substrate; a switching element on the substrate; a first electrode connected to the switching element; a second electrode on the first electrode; a light emitting element between the first electrode and the second electrode; and a non-conductive oxide film between the first electrode and the light emitting element.Type: GrantFiled: April 25, 2018Date of Patent: February 2, 2021Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Gwuihyun Park, Pilsoon Hong, Chulwon Park, Bogeon Jeon
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Patent number: 10903371Abstract: According to one embodiment, an apparatus includes a substrate, and at least one three dimensional (3D) structure above the substrate. The substrate and the 3D structure each include a semiconductor material. The 3D structure also includes: a first region having a first conductivity type, and a second region coupled to a portion of at least one vertical sidewall of the 3D structure.Type: GrantFiled: January 7, 2016Date of Patent: January 26, 2021Assignees: Lawrence Livermore National Security, LLC, The Regents of the University of CaliforniaInventors: Adam Conway, Sara Elizabeth Harrison, Rebecca J. Nikolic, Qinghui Shao, Lars Voss, Srabanti Chowdhury
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Patent number: 10840192Abstract: A chip package assembly and method for fabricating the same are provided which utilize a stiffener to improve a package substrate against out of plane deformation. In one example, a chip package assembly is provided that includes a package substrate, at least one integrated circuit (IC) die and a stiffener. The package substrate has a first surface and a second surface coupled by a side wall. The at least one IC die is disposed on the first surface of the package substrate. The stiffener is disposed outward of the at least one IC die. The stiffener has a first surface disposed outward of and bonded to the side wall of the package substrate. The stiffener has a second surface bonded to at least one of the first and second surfaces of the package substrate.Type: GrantFiled: April 6, 2017Date of Patent: November 17, 2020Assignee: XILINX, INC.Inventors: Nael Zohni, Shin S. Low, Inderjit Singh, Raghunandan Chaware, Ganesh Hariharan
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Patent number: 10840358Abstract: Semiconductor structures and method for forming the same are provide. The method includes forming a gate structure over a substrate and forming a recess in the substrate adjacent to the gate structure. The method further includes forming a doped region at a sidewall and a bottom surface of the recess and partially removing the doped region to modify a shape of the recess. The method further includes forming a source/drain structure over a remaining portion of the doped region.Type: GrantFiled: April 25, 2018Date of Patent: November 17, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shahaji B. More, Shih-Chieh Chang, Cheng-Han Lee, Huai-Tei Yang
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Patent number: 10833123Abstract: A method for deactivating memory cells affected by the presence of grain boundaries in polycrystalline selection devices includes crystallizing a semiconductor layer in a diode stack to form a polycrystalline layer for selection diodes formed in a crossbar array. To achieve a crystalline state in phase change memory elements coupled to corresponding selection diodes perform an anneal. Memory cells having shunted selection diodes due to grain boundaries are identified by scanning the array using sense voltages. A second voltage larger than the sense voltages is applied to the phase change memory elements gated by the shunted selection diodes such that the phase change memory elements gated by the shunted diodes achieve a permanently high resistive state.Type: GrantFiled: January 15, 2019Date of Patent: November 10, 2020Assignee: International Business Machines CorporationInventors: Bahman Hekmatshoartabari, Chung H. Lam, Fabio Carta, Matthew J. BrightSky
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Patent number: 10825966Abstract: A display panel, a display device and a display method are provided. The display panel includes a base substrate, a pixel array and a light conversion layer. The pixel array is arranged on the base substrate and includes a plurality of pixel units, and the light conversion layer is arranged on a display side of the pixel array. Each of the plurality of pixel units includes an optical resonant structure, and the optical resonant structure includes a first reflection layer, a second reflection layer and a dielectric layer. The first reflection layer is arranged on the base substrate, the second reflection layer is arranged on the first reflection layer and is parallel to the first reflection layer, and the dielectric layer is arranged between the first reflection layer and the second reflection layer.Type: GrantFiled: April 25, 2018Date of Patent: November 3, 2020Assignees: BOE TECHNOLOGY GROUP CO., LTD., BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.Inventors: Zhidong Wang, Lianjie Qu, Yun Qiu
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Patent number: 10825821Abstract: A computing device includes a wafer having multiple layers, the wafer including a top layer and sublayers disposed below it, the sublayers including one or more memory devices. The computing device also includes two or more shaped retainer elements shaped to mate with and at least partially surround at least the top of the wafer and in electrical contact with one or more chips disposed on a top of the top layer and a holding device that mates with the retainer elements to provide at least power to the retaining elements. So arranged, the wafer may be cooled.Type: GrantFiled: December 18, 2015Date of Patent: November 3, 2020Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Babar A. Khan, Arvind Kumar, Kamal K. Sikka
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Patent number: 10818866Abstract: An organic electroluminescent device, a production method thereof, and a display apparatus are disclosed. Specifically, the organic electroluminescent device includes: a substrate; a pixel defining layer on the substrate; and a hole injection layer on the substrate, wherein the hole injection layer is located in a pixel defining opening of the pixel defining layer, wherein the hole injection layer includes a first hole injection sub-layer and a second hole injection sub-layer covering the first hole injection sub-layer, an orthographic projection area of the second hole injection sub-layer on the substrate is greater than the orthographic projection area of the first hole injection sub-layer on the substrate, and a hole mobility of the second hole injection sub-layer is greater than the hole mobility of the first hole injection sub-layer.Type: GrantFiled: May 29, 2018Date of Patent: October 27, 2020Assignee: BOE TECHNOLOGY GROUP CO., LTD.Inventor: Wenjun Hou
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Patent number: 10811421Abstract: Vertical memory devices, and methods of manufacturing the same, include providing a substrate including a cell array region and a peripheral circuit region, forming a mold structure in the cell array region, forming an opening for a common source line passing through the mold structure and extending in a first direction perpendicular to a top surface of the substrate, forming a first contact plug having an inner sidewall delimiting a recessed region in the opening for the common source line, and forming a common source bit line contact electrically connected to the inner sidewall of the first contact plug.Type: GrantFiled: September 22, 2017Date of Patent: October 20, 2020Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-yong Park, Kee-jeong Rho, Hyeong Park, Tae-wan Lim
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Patent number: 10798496Abstract: A hearing assistance device to provide sound to the ear of a user, the device comprising a housing, hearing assistance electronics enclosed in the housing, an acoustic transducer adapted to be worn in the ear, a cable assembly adapted to connect the acoustic transducer to the hearing assistance electronics, a wireless communications receiver connected to the hearing assistance electronics, and an antenna comprising one or more conductors forming at least a portion of the cable assembly.Type: GrantFiled: December 5, 2016Date of Patent: October 6, 2020Assignee: Starkey Laboratories, Inc.Inventor: Jeffrey Paul Solum
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Patent number: 10784468Abstract: The present invention provides a package method of an OLED element and an OLED package structure. In the package method of the OLED element, according to the present invention, by manufacturing a circle of the retaining wall at the periphery of the OLED element, and then forming the laminated film covering the OLED element in the region surrounded by the retaining wall, and the laminated film comprises the few first barrier layers and the few buffer layers which are alternately stacking, and ultimately, forming the second barrier layer which completely covers the buffer layer and the top of the retaining wall on the outermost buffer layer of the laminated film, the OLED package structure of extremely strong sealing can be obtained. In the package method, a protective shield of extremely strong sealing for the OLED element is formed with the retaining wall and the outermost second barrier layer.Type: GrantFiled: April 26, 2016Date of Patent: September 22, 2020Assignee: TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventor: Jiajia Qian
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Patent number: 10777673Abstract: A high electron mobility transistor (HEMT) gallium nitride (GaN) bidirectional blocking device includes a hetero-junction structure comprises a first semiconductor layer interfacing a second semiconductor layer of two different band gaps thus generating an interface layer as a two-dimensional electron gas (2DEG) layer. The HEMT GaN bidirectional blocking device further includes a first source/drain electrode and a second source/drain electrode disposed on two opposite sides of a gate electrode disposed on top of said hetero-junction structure for controlling a current flow between the first and second source/drain electrodes in the 2DEG layer wherein the gate electrode is disposed at a first distance from the first source/drain electrode and a second distance from the second source/drain electrode and the first distance is different from the second distance.Type: GrantFiled: May 31, 2019Date of Patent: September 15, 2020Assignee: Alpha and Omega Semiconductor IncorporatedInventor: David Sheridan
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Patent number: 10777583Abstract: An array substrate, a method for manufacturing the same and a display panel are provided. The array substrate comprises: a substrate; a bare chip fixed on the substrate, the bare chip comprising pins; a buffer layer and a first metallic layer disposed sequentially on the bare chip, the first metallic layer comprising outer leads in one-to-one correspondence with the pins of the bare chip, the outer leads being connected electrically to the pins corresponding thereto of the bare chip, and the outer leads being electrically insulated from each other; a thin film transistor; and a first signal wire and a first connecting wire disposed in a same layer as a gate electrode of the thin film transistor, and a second signal wire and a second connecting wire disposed in a same layer as a source electrode and a drain electrode of the thin film transistor.Type: GrantFiled: April 25, 2018Date of Patent: September 15, 2020Assignees: BOE TECHNOLOGY GROUP CO., LTD., BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.Inventors: Zhidong Wang, Yun Qiu, Lianjie Qu
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Patent number: 10741560Abstract: A semiconductor device includes a source region and a drain region formed in a transistor structure. A channel region is disposed between the source region and the drain region. A cladding layer is formed on the channel region, the cladding layer including a semiconductor material. A gate dielectric of a gate structure is formed on the cladding layer.Type: GrantFiled: October 26, 2017Date of Patent: August 11, 2020Assignee: International Business Machines CorporationInventor: Effendi Leobandung
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Patent number: 10727327Abstract: Fabrication methods and device structures for a silicon controlled rectifier. A cathode is arranged over a top surface of a substrate and a well is arranged beneath the top surface of the substrate. The cathode is composed of a semiconductor material having a first conductivity type, and the well also has the first conductivity type. A semiconductor layer, which has a second conductivity type opposite to the first conductivity type, includes a section over the top surface of the substrate. The section of the semiconductor layer is arranged to form an anode that adjoins the well along a junction.Type: GrantFiled: January 29, 2018Date of Patent: July 28, 2020Assignee: GLOBALFOUNDRIES INC.Inventors: Rahul Mishra, Vibhor Jain, Ajay Raman, Robert J. Gauthier
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Patent number: 10693037Abstract: A light emitting diode structure includes a first type semiconductor layer, a second type semiconductor layer, an active layer disposed therebetween, and a reflective stacked layer. The reflective stacked layer includes a first reflective layer and a second reflective layer. The first reflective layer is disposed at a side of the second type semiconductor layer opposing the active layer. The second reflective layer is disposed at a side of the first reflective layer opposing the second type semiconductor layer, and extends along a side surface of the first reflective layer to a surface of the second type semiconductor layer. A vertical projection area of the second reflective layer on the second-type semiconductor layer is greater than that of the first reflective layer thereon. The second reflective layer has a better resistance to migration than the first reflective layer.Type: GrantFiled: February 16, 2017Date of Patent: June 23, 2020Assignee: Lextar Electronics CorporationInventors: Shiou-Yi Kuo, Shih-Huan Lai
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Patent number: 10693003Abstract: An embodiment of a method for forming a transistor that includes providing a semiconductor substrate having a source/drain region is provided where a first SiGe layer is formed over the source/drain region. A thermal oxidation is performed to convert a top portion of the first SiGe layer to an oxide layer and a bottom portion of the first SiGe layer to a second SiGe layer. A thermal diffusion process is performed after the thermal oxidation is performed to form a SiGe area from the second SiGe layer. The SiGe area has a higher Ge concentration than the first SiGe layer.Type: GrantFiled: May 19, 2017Date of Patent: June 23, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Hao Chang, Jeff J. Xu, Chien-Hsun Wang, Chih Chieh Yeh, Chih-Hsiang Chang
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Patent number: 10685983Abstract: To provide a semiconductor device capable of retaining data for a long time. The semiconductor device includes a first transistor, an insulator covering the first transistor, and a second transistor over the insulator. The first transistor includes a first gate electrode, a second gate electrode overlapping with the first gate electrode, and a semiconductor between the first gate electrode and the second gate electrode. The first gate electrode is electrically connected to one of a source and a drain of the second transistor.Type: GrantFiled: October 26, 2017Date of Patent: June 16, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Daigo Ito, Yutaka Okazaki, Takahisa Ishiyama