Abstract: A MIM capacitor is formed on a semiconductor substrate having a top surface and including regions formed in the surface selected from a Shallow Trench Isolation (STI) region and a doped well having exterior surfaces coplanar with the semiconductor substrate. A capacitor lower plate is either a lower electrode formed on the STI region in the semiconductor substrate or a lower electrode formed by a doped well formed in the top surface of the semiconductor substrate that may have a silicide surface. A capacitor HiK dielectric layer is formed on or above the lower plate. A capacitor second plate is formed on the HiK dielectric layer above the capacitor lower plate. A dual capacitor structure with a top plate may be formed above the second plate with vias connected to the lower plate protected from the second plate by sidewall spacers.

Abstract: The invention is a light emitting diode that exhibits high reflectivity to incident light and high extraction efficiency for internally generated light. The light emitting diode includes a reflecting layer that reflects both the incident light and the internally generated light. A multi-layer semiconductor structure is deposited on the reflecting layer. The multi-layer semiconductor structure has an active layer that emits the internally generated light. An array of light extracting elements extends at least part way through the multi-layer semiconductor structure and improves the extraction efficiency for internally generated light. The light extracting elements can be an array of trenches, an array of holes, an array of ridges or an array of etched strips. The light emitting diode improves the efficiency of light recycling illumination systems.

Abstract: An organic electro luminescence device is provided. A thin film transistor (TFT) is formed within a sub-pixel region defined by a gate line and a data line on a substrate. A passivation layer and a first electrode are sequentially formed on the substrate where the TFT is formed. A contact hole is formed at a predetermined portion of the passivation layer and the first electrode so as to expose a drain electrode of the TFT. An electrode separator and a buffer layer are misaligned with the gate line by a predetermined position, such that an emission region corresponding to the sub-pixel and a region including the contact hole of the TFT are separated. An organic electro luminescent layer is formed within a region defined by the buffer region. A second electrode is formed on the organic electrode luminescent layer and is connected to the drain electrode of the TFT through the contact hole.

Abstract: Semiconductor component, having a first chip arranged on a second chip, in which the first and second chips in each case have, on one of their main areas, first and second metalizations, respectively, which face one another. First regions of the metalizations are provided for the production of an electrical connection between the first and second chips. Second regions of the metalization are provided as an additional electrical functional plane outside the first and second chips.

Abstract: A semiconductor light emitting device comprising: a transparent substrate; an electron injection layer of N-type GaN-based semiconductor; an active layer on the electron injection layer; a hole injection layer of P-type GaN-based semiconductor on the active layer; a first electrode structure on the hole injection layer; a second electrode structure on the electron injection layer; and a circuit substrate flip-chip bonded with the electrode structures, wherein the first electrode structure comprises a contact metal structure which is mesh- or island-shaped on the hole injection layer to expose a surface portion of the hole injection layer, and a reflective layer which covers the contact metal structure and the exposed surface portion of the hole injection layer, at least an upper portion of the reflective layer being made of silver (Ag) or aluminum (Al), an area ratio of the contact metal structure to the first electrode structure satisfies a following inequality: 0.4?Apd/Atotal<1.

Abstract: An organic thin film transistor and a method of manufacturing the same are provided. The transistor has a threshold voltage that can be easily controlled without changing the material forming an organic semiconductor film. The organic thin film transistor includes a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor film. A threshold voltage controlling film is provided between the gate insulating film and the organic semiconductor film.

Abstract: A method of a bulk tri-gate transistor having stained enhanced mobility and its method of fabrication. The present invention is a nonplanar transistor having a strained enhanced mobility and its method of fabrication. The transistor has a semiconductor body formed on a semiconductor substrate wherein the semiconductor body has a top surface on laterally opposite sidewalls. A semiconductor capping layer is formed on the top surface and on the sidewalls of the semiconductor body. A gate dielectric layer is formed on the semiconductor capping layer on the top surface of a semiconductor body and is formed on the capping layer on the sidewalls of the semiconductor body. A gate electrode having a pair of laterally opposite sidewalls is formed on and around the gate dielectric layer. A pair of source/drain regions are formed in the semiconductor body on opposite sides of the gate electrode.

Abstract: A side-emission type semiconductor light-emitting device 10 includes a substrate 12, and the substrate 12 is provided with a case 14 formed of a resin having opacity and reflectivity. The substrate 12 is formed, on its surface, with electrodes 18a and 18b onto which an LED chip 20 is bonded. A transparent or translucent resin 16 is charged between the substrate 12 and the case 14 whereby the LED chip 20 is molded. A light-emitting surface of the side-emission type semiconductor light-emitting device 10 includes surfaces 16a, 16b and a surface opposite to the surface 16b which are formed of the transparent or translucent resin 16. Furthermore, the light-emitting surface is formed by a roughened surface. Due to this, a light outputted from the LED chip and a light reflected from the case 14 is scattered by the light-emitting surface.

Abstract: A semiconductor device is provided which has a capacitor insulating film made up of zirconium aliminate being an amorphous film obtained by having crystalline dielectric contain amorphous aluminum oxide and having its composition of AlXZr(1-X)OY (0.05?x?0.3), hereby being capable of preventing, in a process of forming a capacitor of MIM (Metal Insulator Metal) structure, dielectric breakdown of a capacitor insulating film while a relative dielectric constant of a metal oxide film used as the capacitor insulating film is kept high.

Abstract: A semiconductor device capable of incorporating an element configured to accept and emit light having a short wavelength and a manufacturing method thereof are provided. A semiconductor element is housed in an enclosure which includes a bottom portion and side portions and having an aperture on an upper part thereof. Leads are buried in the bottom portion, and an end of each of the leads is arranged so as to approach the semiconductor element. The semiconductor element is connected to the leads by use of metal wires. The aperture of the enclosure is covered with a lid made of a transparent material for transmitting light accepted or emitted by the semiconductor element.

Abstract: A light emitting device has: a light emitting element; a conducting portion to supply power to the light emitting element; an element housing portion that houses the light emitting element therein; and a sealing material that seals the light emitting element housed in the element housing portion. The sealing material contains a transparent resin material and a transparent filler with a thermal expansion coefficient smaller than the transparent resin material, and the transparent filler has a refractive index nearly equal to the transparent resin material.

Abstract: A non-contact identification semiconductor device is provided with a semiconductor chip including a receiving circuit that receives an inquiry to the non-contact identification semiconductor device, a memory that stores identification information of multiple bits and a sending circuit that sends the identification information. An antenna coupled to said semiconductor chip receives the identification information from said semiconductor chip and transmits the identification information outside of said non-contact semiconductor. The long side length of the semiconductor chip is not greater than 0.5 mm in plane dimension, and the identification information is stored by a pattern printed by an electron beam.

Abstract: After an amorphous semiconductor thin film is crystallized by utilizing a catalyst element, the catalyst element is removed by performing a heat treatment in an atmosphere containing a halogen element. A resulting crystalline semiconductor thin film exhibits {110} orientation. Since individual crystal grains have approximately equal orientation, the crystalline semiconductor thin film has substantially no grain boundaries and has such crystallinity as to be considered a single crystal or considered so substantially.

Abstract: To provide an electro-optical device comprising a thin film having a uniform thickness, which is formed by drying liquid droplets filled in a liquid droplet ejection region surrounded by a partition. An electro-optical device comprises partitions 22 for separating a plurality of regions formed on a substrate 10. Each of the partitions 22 has a lyophilic first partition 43 and a liquid-repellent second partition 44 which is formed on an upper surface portion of the first partition except for a circumferential portion surrounding the region of the first partition 43. The device also comprises a functional layer 45 which is formed on the region surrounded by the partition and includes at least a light emitting layer.

Abstract: A Flip-chip light-emitting device with integral micro-reflector. The flip-chip light-emitting device emits reflected light provided by a light-emitting layer. The micro-reflector reflects light that might otherwise be lost to internal refraction and absorption, so as to increase light-emitting efficiency.

Abstract: Semiconducting devices, including integrated circuits, protected from reverse engineering comprising metal traces leading to field oxide. Metallization usually leads to the gate, source or drain areas of the circuit, but not to the insulating field oxide, thus misleading a reverse engineer. A method for fabricating such devices.

Abstract: A flip-chip type of Group III nitride based compound semiconductor light-emitting device comprises a transparent conductive film 10 made of ITO on a p-type contact layer. On the transparent conductive film, an insulation protection film 20, a reflection film 30 which is made of silver (Ag) and aluminum (Al) and reflects light to a sapphire substrate side, and a metal layer 40 made of gold (Au) are deposited in sequence. Because the insulation protection film 20 exists between the transparent conductive film 10 and the reflection film 30, metal atoms comprised in the reflection film 30 can be prevented from diffusing in the transparent conductive film 10. That enables the transparent conductive film 10 to maintain high transmissivity. As a result, a light-emitting device having high external quantum efficienty can be provided.

Abstract: Exemplary embodiments of the present invention are intended to provide a semiconductor device that can readily address or achieve high integration. Exemplary embodiments provide a semiconductor device constructed to include a transistor and a multi-layer wiring structure electrically connected to the transistor, the multi-layer wiring structure having a first wiring layer disposed in the same layer as the semiconductor layer of the transistor.

Abstract: A semiconductor light emitting device includes a planar light emitting layer with a wurtzite crystal structure having a <0001> axis roughly parallel to the plane of the layer, referred to as an in-plane light emitting layer. The in-plane light emitting layer may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, the in-plane light emitting layer has a thickness greater than 50 ?.

Abstract: A light-emitting module having a light-emitting efficiency. The light-emitting module that emits light includes a semiconductor light-emitting element operable to emit light, and a sealing member operable to seal the semiconductor light-emitting element with materials that transmit the light emitted from the light-emitting module, in which the semiconductor light-emitting element includes a sapphire substrate that transmits light toward the sealing member to send the transmitted light from a facing face facing the sealing member and forms a sub-wavelength grating for reducing reflection of light on the facing face in grid periods shorter than a wavelength of the light transmitted through the sapphire substrate, and a semiconductor layer that is formed on a rear face of the facing face in the sapphire substrate by crystal growth and emits light toward the sapphire substrate.