Abstract: An organic light emitting display device, including a substrate, a first conductive layer pattern on the substrate, a first insulation layer pattern on the first conductive layer pattern, a first semiconductor layer pattern on the first insulation layer pattern, a gate insulation layer pattern on the gate insulation layer pattern, a gate electrode on the gate insulation layer pattern, a planarization layer on the gate electrode, the planarization layer including a first protruding portion protruded in a first direction perpendicular to an upper surface of the substrate, a lower electrode on the first protruding portion, a pixel defining layer exposing at least a portion of the lower electrode, the pixel defining layer covering opposite side portions of the first protruding portion, a light emitting layer on the lower electrode, and an upper electrode on the light emitting layer.

Abstract: The invention relates to an optoelectronic component with a first substrate, a second substrate, a functional layer stack, a lateral first recess and a first contact surface, the layer stack being arranged between the first substrate and the second substrate. Said layer stack comprises an organically active area for producing electromagnetic radiation, and the component has a first lateral surface. The first recess extends in the lateral direction to the first lateral surface and in the vertical direction through the second substrate.

Abstract: Provided are a method of manufacturing a substrate, a method of manufacturing an organic electronic device (OED), a substrate, an OED, and a use thereof. The method of manufacturing a substrate which may provide an OED having an element with improved efficiency may be provided. In addition, a substrate having excellent surface roughness, and a refractive index or a light scattering property, which is suitably controlled according to a desired effect may be manufactured, and therefore the substrate capable of forming an OED having excellent reliability and efficiency and the method of manufacturing an OED may be provided. Moreover, a substrate and an OED, which are manufactured by the above methods, and their uses may be provided. The manufacturing method may be effectively applied to manufacture, for example, a flexible element.

Abstract: A display may have thin-film transistor circuitry on a substrate. An array of organic light-emitting diodes may be formed on the thin-film transistor circuitry. The organic light-emitting diodes may have anodes, cathodes, and emissive material located between the anodes and cathodes. A circular polarizer may be formed over the array of organic light-emitting diodes. The circular polarizer may include a linear polarizer and a quarter wave plate. The linear polarizer may be formed from one or more film layers having narrowband dichroic dyes so that the polarizer exhibits transmission peaks aligned with a selected subset of wavelengths and absorbance notches corresponding to the selected subset of wavelengths. The selected subset of wavelengths may cover the ranges where the light-emitting diodes are outputting light. Configured in this way, the polarizer will exhibit enhanced luminance at the desired wavelengths while suppressing ambient light reflections at other wavelengths in the visible spectrum.

Abstract: A display device includes a display region comprising a plurality of pixels, each pixel of the plurality of pixels comprises a light emitting element which includes a pixel electrode, a conductive layer below the pixel electrode and configured to receive a specified electric voltage, and a thin film transistor below the pixel electrode and the conductive layer, wherein the thin film transistor comprises a semiconductor layer which includes a channel region, a gate electrode which is overlapping the channel region, a first electrode electrically connected to the semiconductor layer and the pixel electrode, and a second electrode electrically connectable to a power supply line, wherein the conductive layer includes an overlapped region which overlaps with the channel region, and the first electrode extends so as to cover the gate electrode at the overlapped region.

Abstract: An organic light-emitting diode display device includes a first substrate that includes a display region with a plurality of pixels and a non-display region in a periphery of the display region, a first electrode disposed on the first substrate, a second electrode opposed to the first electrode, an organic light-emitting layer disposed between the first electrode and the second electrode, and at least one light sensing member disposed on a rear surface of the first substrate that overlaps the display region.

Abstract: A method for a capacitive micromachined ultrasound transducer (cMUT) is provided. The method grows and patterns a diffusion barrier layer over a surface of a base layer. The diffusion barrier layer have different areas that allow different levels of diffusion penetration. A diffusion process is performed over the diffusion barrier layer such that a diffusion reactivated material reaches different depths into the base layer below the different areas. A anchor is formed using the diffusion reactivated material. The anchor has a lower portion below a major surface of the base layer and an upper portion above the major surface of the base layer. A cover layer is placed over the anchor and the base layer. At least one of the cover layer and the base layer includes a flexible layer, such that the cMUT electrodes are movable relative to each other to cause a change of the gap width.

Abstract: A device includes a substrate, a metal pad over the substrate, and a passivation layer having a portion over the metal pad. A post-passivation interconnect (PPI) is electrically coupled to the metal pad, wherein the PPI includes a portion over the metal pad and the passivation layer. A polymer layer is over the PPI. A solder ball is over the PPI. A compound includes a portion adjoining the solder ball and the polymer layer, wherein the compound includes flux and a polymer.

Abstract: An organic light-emitting diode (OLED) display panel includes an organic layer positioned on a first electrode and a multilayer thin film positioned on the organic layer. The multilayer thin film is formed of a stack of graphene. The multilayer thin film has an interlayer bonding between two or more upper layers thereof.

Abstract: A display device includes a substrate and a reflection layer. The substrate includes a first emission region, a second emission region, a third emission region, and a non-emission region. The reflection layer overlaps the first emission region, the second emission region, and the non-emission region, and has an opening corresponding to the third emission region. The first emission region, the second emission region, and the third emission region emit different color light.

Abstract: Disclosed is an organic light emitting device (OLED) that may include a first electrode including at least two conductive units that are immediately adjacent to each other; a second electrode facing the first electrode; an organic layer between the first electrode and the second electrode; and an auxiliary electrode electrically connected to the first electrode, the auxiliary electrode including at least two branch points that are immediately adjacent to each other, each branch point having at least three branches, wherein a resistance between the at least two branch points is 35? or less, and wherein a resistance between the at least two conductive units is 2,000? or more and 600,000? or less.

Abstract: The invention provides a memory device and a manufacturing method thereof. The memory device includes a substrate, a capacitor, a protection device, a first metal interconnect, and a second metal interconnect. The capacitor is located on the substrate of a first region. The protection device is located in the substrate of a second region. The capacitor includes a plurality of bottom electrodes, a top electrode, and a capacitor dielectric layer. The top electrode has a first portion and a second portion, wherein the second portion is extended to the second region. The capacitor dielectric layer is located between the bottom electrodes and the top electrode. The first metal interconnect is located between the capacitor and the substrate. The second metal interconnect is located between the second portion of the top electrode and the protection device. The top electrode is electrically connected to the protection device through the second metal interconnect.

Abstract: To provide a method of manufacturing a display device having an excellent impact resistance property with high yield, in particular, a method of manufacturing a display device having an optical film that is formed using a plastic substrate. The method of manufacturing a display device includes the steps of: laminating a metal film, an oxide film, and an optical filter on a first substrate; separating the optical filter from the first substrate; attaching the optical filter to a second substrate; forming a layer including a pixel on a third substrate; and attaching the layer including the pixel to the optical filter.

Abstract: Three light-emitting units are included. Two light-emitting units of the three light-emitting units are similar-color light-emitting units that emit light in a similar color, and have mutually different luminance lives. A remaining light-emitting unit of the three light-emitting units is a different-color light-emitting unit that emits light in a color that is different from the similar color, and has a luminance life that is shorter than each luminance life of the two similar-color light-emitting units.

Abstract: An OLED module equipped with vertical electric connection structure includes a substrate, a plurality of OLED clusters, an anode wire structure and a cathode wire structure. The substrate is extended toward a first direction. The OLED clusters are located on the substrate in the first direction. The anode wire structure includes a bottom layer wire set, an insulation layer, a middle wire layer set and a top layer wire set. The bottom layer wire set is located on the substrate. The insulation layer is located on the bottom layer wire set. The top layer wire set is located on the insulation layer. The cathode wire structure is located on the substrate and extended axially thereof. The middle layer wire set runs through the insulation layer and forms vertical connection between the bottom layer wire set and the top layer wire set.

Abstract: An organic light-emitting display device includes: a substrate; a display on the substrate and comprising a display region and a non-display region at a perimeter of the display region; a thin-film encapsulation layer sealing the display; a voltage line at the non-display region and surrounding the display region; and a dam unit overlapping an edge of an outer side of the voltage line, wherein the voltage line comprises: a first voltage line at one side of the display region; and a second voltage line surrounding a pair of first end portions of the first voltage line and other sides of the display region, and an outer side of the first voltage line and an outer side of the second voltage line are on a same line outside the one side of the display region.

Abstract: A method for manufacturing an array substrate, a film-etching monitoring and a film-etching monitoring device. The monitoring method comprises: monitoring and recording the transmittance reference value of a film after a film pattern is formed; and monitoring the transmittance present value of the film in real time in the process of etching an overcoating layer to form a through hole after the overcoating layer is formed on the film pattern, and monitoring the etching degree of the film by determining the variation between the transmittance present value and the transmittance reference value. The device comprises a plurality of light sources (3) and a plurality of light-sensitive probes (4) disposed in the chamber. The light sources (3) are configured to irradiate the film on a substrate; and the light-sensitive probes (4) are configured to sense the transmittance of the film.

Abstract: The present invention discloses a monochrome OLED and a method for manufacturing the same, and an OLED display panel, which can improve the performance of an OLED. A monochrome OLED according to an embodiment of the invention comprises a luminescent layer, wherein the luminescent layer comprises at least one luminescent sublayer; and at least one carrier control layer that is adjacent to the luminescent sublayer, wherein the carrier control layer is adapted to control the concentration ratio of carriers with different polarities in the luminescent layer.

Abstract: Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material.

Abstract: A method for fabricating a semiconductor device may include receiving a gated substrate comprising a substrate with a channel layer and a gate structure formed thereon, over-etching the channel layer to expose an extension region below the gate structure, epitaxially growing a halo layer on the exposed extension region using a first in-situ dopant and epitaxially growing a source or drain on the halo layer using a second in-situ dopant, wherein the first in-situ dopant and the second in-situ dopant are of opposite doping polarity. Using an opposite doping polarity may provide an energy band barrier for the semiconductor device and reduce leakage current. A corresponding apparatus is also disclosed herein.