Abstract: An integrated circuit (IC) device may include a first active transistor of a first-type in a first-type region. The first active transistor may have a first-type work function material and a low channel dopant concentration in an active portion of the first active transistor. The IC device may also include a first isolation transistor of the first-type in the first-type region. The second active transistor may have a second-type work function material and the low channel dopant concentration in an active portion of the first isolation transistor. The first isolation transistor may be arranged adjacent to the first active transistor.

Abstract: Disclosed is an organic light emitting device (OLED) that may include a first electrode including at least two conductive units, each of the at least two conductive units connected to a conductive connector of the first electrode; a second electrode facing the first electrode; a current carrying electrode electrically connected to the at least two conductive units, wherein the current carrying electrode includes a current carrying portion of the first electrode connected to the conductive connector of each of the at least two conductive units or an auxiliary electrode formed of a material different from that of the first electrode; and an organic layer between the first electrode and the second electrode; wherein the conductive connector includes an area in which a length of a direction, in which a current substantially flows, is at least ten times longer than a width of a direction vertical to the length of the direction, and wherein a resistance of the conductive connector is 400? or more and 300,000? or le

Abstract: A method for fabricating an Organic Light-Emitting Diode (OLED) display panel is provided. The method includes arranging Thin-Film Transistor (TFT) devices on one side of a substrate and a function layer on the other side of the substrate to form a laminate including both the TFT devices and the function layer, attaching the laminate onto a loading platform such that the function layer included in the laminate faces towards the loading platform, and conducting a process on the laminate to form an organic electroluminescent material layer on surfaces of the TFT devices.

Abstract: The invention discloses a QD CF substrate and manufacturing method thereof. The manufacturing method uses a patterned photo-resist layer as a masking layer to perform selective quenching on QD layer with a quencher to obtain selectively quenched QD layer, which simplifies QD CF substrate manufacturing process and reduces cost. The QD CF substrate does not use blue QD material in QD layer, but uses blue backlight and organic transparent photo-resist layer to improve light utilization efficiency and reduce material cost. The QD layer is a selectively quenched QD layer, and the portion of the QD layer located above the organic transparent photo-resist layer is quenched by the quencher, and will not emit light when excited by backlight. As such, the invention achieves using the QD material to improve color gamut and brightness, avoid color impurity at blue sub-pixels caused by light mixture, and the manufacturing method is simple.

Abstract: This technology provides an electronic device. An electronic device in accordance with an implementation of this document includes a semiconductor memory, and the semiconductor memory includes a variable resistance structure including a material having a resistance that is changed by formation or dissipation of conductive filaments; and a Magnetic Tunnel Junction (MTJ) structure inserted in the variable resistance structure and comprising a first magnetic layer having a pinned magnetization direction, a second magnetic layer having a variable magnetization direction, and a tunnel dielectric layer interposed between the first magnetic layer and the second magnetic layer.

Abstract: There is provided a nitride semiconductor ultraviolet light-emitting element capable of efficiently releasing a waste heat generated in an ultraviolet light emitting operation. The nitride semiconductor ultraviolet light-emitting element includes a semiconductor laminated portion 11 having an n-type AlGaN layer 6, an active layer 7 of an AlGaN layer, and p-type AlGaN layers 9 and 10; an n electrode 13; a p electrode 12; a protective insulating film 14, and a first plated electrode 15 formed by a wet plating method and composed of copper or alloy containing copper as a main component. The semiconductor laminated portion 11 is formed in a first region R1, and the p electrode is formed on the portion 11. An upper surface of the n-type AlGaN-based semiconductor layer 6 is exposed in a second region, and the n electrode 13 is formed on the upper surface. The protective insulating film 14 has openings for exposing at least one part of the n electrode 13 and at least one part of the p electrode 12.

Abstract: Provided are an organic light emitting diode and a method for preparing the same.

Abstract: Some embodiments described herein include apparatuses and methods of forming such apparatuses. One such embodiment may include a routing arrangement having pads to be coupled to a semiconductor die, with a first trace coupled to a first pad among the pads, and a second trace coupled to a second pad among the pads. The first and second traces may have different thicknesses. Other embodiments including additional apparatuses and methods are described.

Abstract: Disclosed is a light emitting device which includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first current blocking layer, a second current blocking layer arranged on the light emitting structure to be separated from each other, a light-transmitting conductive layer arranged on the first current blocking layer, the second current blocking layer and the light emitting structure, first electrode and second electrode electrically coupled to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, a through hole formed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer, and a through electrode arranged inside the through hole. Here, the through electrode does not overlap the first current blocking layer in a vertical direction.

Abstract: A highly reliable semiconductor device that includes a transistor including an oxide semiconductor, which can display a high-definition image and can be manufactured with a high yield. The semiconductor device includes a pixel portion including a plurality of pixels, a gate signal line driver circuit portion, and a source signal line driver circuit portion including a first circuit that controls timing of sampling video signals and a second circuit that samples the video signals in accordance with the timing and then inputs the sampled video signals to the pixels. The second circuit includes a plurality of transistors in each of which an oxide semiconductor stacked layer is used as a channel formation region, the first circuit and the second circuit are electrically connected to each other by a wiring, and the wiring is electrically connected to gates of at least two transistors of the plurality of transistors.

Abstract: An emissive article includes an OLED having a light emission surface, a circular polarizer, and a light extraction film optically between the OLED and the circular polarizer and being optically coupled to the light emission surface. The light extraction film includes a two-dimensional structured layer of extraction elements having a first index of refraction and a pitch in a range from 400 to 800 nm and a backfill layer including a material having a second index of refraction different from the first index of refraction.

Abstract: Aspects of the present disclosure provides a device comprising a P-type semiconductor substrate, an N-type tub above the semiconductor substrate, a P-type region provided in the N-type tub isolated by one or more P-type isolation structures, and an N-type punch-through stopper provided under the P-type regions isolated by the isolation structure(s). The punch-through stopper is heavily doped compared to the N-type tub. The P-type region has a width between the two isolation structures that is equal to or less than that of the N-type punch-through stopper.

Abstract: A method of fabricating a micro electro mechanical system (MEMS) structure includes providing a first substrate structure including a bonding pad structure. The bonding pad structure has at least one recess therein. A second substrate structure is provided and bonded with the bonding pad structure of the first substrate structure.

Abstract: An organic light emitting display device including a first substrate; a second substrate facing the first substrate; a display unit, which is formed on a surface of the first substrate facing the second substrate and includes at least one organic light-emitting element; a first sealing unit, which is disposed between the first substrate and the second substrate to surround the display unit; a second sealing unit, which is disposed between the first substrate and the second substrate along the inner edges of the first sealing unit and includes a plurality of dots disposed apart from one another; and a screen, which is formed on a surface of the second substrate opposite a surface facing the first substrate to cover the second sealing unit.

Abstract: Methods of forming semiconductor structures that include bodies of a semiconductor material disposed between rails of a dielectric material are disclosed. Such methods may include filling a plurality of trenches in a substrate with a dielectric material and removing portions of the substrate between the dielectric material to form a plurality of openings. In some embodiments, portions of the substrate may be undercut to form a continuous void underlying the bodies and the continuous void may be filled with a conductive material. In other embodiments, portions of the substrate exposed within the openings may be converted to a silicide material to form a conductive material under the bodies. For example, the conductive material may be used as a conductive line to electrically interconnect memory device components. Semiconductor structures and devices formed by such methods are also disclosed.

Abstract: The present disclosure discloses a composite film and a method for manufacturing the same, and an organic light-emitting diode and a method for packaging the same. The composite film comprises: a base membrane; a PDDA layer, which is deposited on a first surface of the base membrane; a graphite oxide layer, which is deposited on the PDDA layer; a monomolecular layer, which is self-assembled on a surface of the graphite oxide layer and is composed of a compound of Formula I. The method for manufacturing the composite film comprises a self-assembling step which includes placing and soaking a base membrane deposited with a graphite oxide layer in a solution of a compound of Formula I, and self-assembling the compound of Formula I on the graphite oxide layer.

Abstract: In some embodiments, the present disclosure relates to a method of operating an RRAM cell having a PMOS access transistor. The method may be performed by forming an initial conductive filament within a dielectric data storage layer of an RRAM cell having a bottom electrode connected to a drain terminal of a PMOS transistor and a top electrode separated from the bottom electrode by the dielectric data storage layer. The initial conductive filament is formed by turning on the PMOS transistor by providing a substantially zero first forming voltage to a gate terminal of the PMOS transistor, by providing a substantially zero second forming voltage to a source terminal of the PMOS transistor, by providing a first non-zero forming voltage to a bulk terminal of the PMOS transistor, and by providing a second non-zero forming voltage to the top electrode.

Abstract: An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by which a semiconductor device can be manufactured with high productivity. A main point is to perform oxygen radical treatment on a surface of a gate insulating layer. Accordingly, there is a peak of the oxygen concentration at an interface between the gate insulating layer and a semiconductor layer, and the oxygen concentration of the gate insulating layer has a concentration gradient. The oxygen concentration is increased toward the interface between the gate insulating layer and the semiconductor layer.

Abstract: An OLED display device including a first substrate, a first electrode disposed on the first substrate, an organic light emitting layer disposed on the first electrode, a second electrode disposed on the organic light emitting layer, and an organic dot disposed on the second electrode.

Abstract: Embodiments are directed to a method of forming a dielectric region of a fin-type field effect transistor (FinFET). The method includes forming at least one fin, and forming a dielectric region adjacent a lower portion of the at least one fin, wherein the dielectric region includes a top surface. The method further includes forming a blocking layer on the top surface of the dielectric region, wherein the blocking layer is configured to prevent at least one subsequent FinFET fabrication operation from impacting the top surface of the dielectric region.