Abstract: A random access read/write MOS memory device consisting of an array of rows and columns of one-transistor memory cells employs a bistable sense amplifier circuit at the center of each column. The sense amplifier is of the dynamic type in that coupling transistors connect the column line halves to the cross-coupled drive transistors. The sources of the driver transistors are connected to ground through a sequentially timed, three step grounding arrangement employing two transistors, one having a dual channel implanted to provide two different threshold voltages. Active load devices connected to the column line halves provide pull-up of the voltage on the one-going column line half to a full Vdd level.

Abstract: A random access read/write MOS memory device consisting of an array of rows and columns of one-transistor memory cells employs a bistable sense amplifier circuit at the center of each column. The sense amplifier is of the dynamic type in that coupling transistors connect the column line halves to the cross-coupled driver transistors. The sources of the driver transistors are connected to ground through a sequentially timed, three step grounding arrangement employing two transistors, one having a dual channel implanted to provide two different threshold voltages. Active load devices connected to the column line halves provide pull-up of the voltage on the one-going column line half to a full Vdd level.

Abstract: A clock pulse generating circuit comprises a plurality of circuit blocks connected in series successively to form a multistage configuration, each of alternate ones of which at the odd stages is composed of a first switching element being supplied with a first timing signal, first capacitive element coupled in series with the first switching element and an a NOR gate circuit to which a voltage obtained at the connecting point between the first switching element and the first capacitive element and the first timing signal are supplied, and each of another alternate ones of which at the even stages is composed of a second switching element supplied with a second timing signal, a second capacitive element coupled in series with the second switching element and an inverter to which a voltage obtained at the connecting point between the second switching element and the second capacitive element.

Abstract: An FET complementary pair provides the output to a data line. A data input line is coupled to the gate of the P-FET via an OR gate configuration, and to the gate of the N-FET via an AND gate configuration. The output of each gate configuration is cross-connected to an input of the other. When the input data state changes, the two gate configurations provide delays which are effectively in tandem, so that the FET which was ON is first turned OFF, and after a short delay the other is turned ON. This delay ensures that both FET's are not ON at the same time, which prevents an undesirable power flow. To provide a high impedance "float" state, an enable input and its complement are connected to the AND and OR gate configurations respectively.

Abstract: A dynamic ECL circuit is provided which drives loads having significant capacitance. The dynamic ECL circuit may utilize single level or multiple level logic and may be configured, for example, as an OR/NOR gate. A capacitor is placed between the base of a current source transistor and a circuit point having a logic level complementary to the output connected to the current source. As logic transitions occur within the circuit and are presented on the output, a transient current will be experienced through the capacitor due to the shift in the complementary level thereby momentarily altering the voltage on the base of the current source transistor. The dynamic alteration of base voltage produces a momentary change in the current through the current source transistor which serves to both speed up the high-to-low transition time and the low-to-high transition time on the output line.

Abstract: A semiconductor device for use in a sense amplifier of a memory circuit includes a first load, a second load, third loads and first and second enhancement-type transistors. The first enhancement-type transistor is connected between the first load and the third loads and receives a data signal. The second enhancement-type transistor is connected between the second load and the third loads and receives a reference voltage. The reference voltage is compensated for by a temperature-compensating circuit so that the reference voltage is changed in accordance with a change in temperature.

Abstract: The voltage comparator includes a first and a second voltage supply terminal, and a first and a second output node. A first current source is connected between the first supply terminal and the first output node. A first field effect transistor of one channel conductivity type is connected between the first output node and the second supply terminal. The gate of the first transistor is connected to the second output node. A second current source is connected between the first supply terminal and the second output node. A second field effect transistor of the one conductivity is connected between the second output node and the second supply terminal. The gate of the second transistor is connected to the first output node. During a first period of time the first and second output nodes and the capacitances of the gates of the first and second transistors connected thereto are maintained at the potential of the second supply terminal by switches connected thereacross.

Abstract: A MOS logic circuit including a known MOS logic circuit arrangement having a particular input/output signal transfer characteristic and a control gating circuit including an FET connected to the known MOS logic circuit arrangement, the gate of which gating circuit receives a control voltage derived from an irreversible control voltage generator utilizing a fuse. Under the control of the irreversible control voltage, the MOS logic circuit can permanently change the known logic circuit arrangement's signal transfer characteristic without varying its logic function.

Abstract: A temperature compensated differential level shift circuit is provided. An ECL type buffered differential circuit employs a source of threshold voltage, V.sub.T, which matches the temperature-dependent characteristic of the input section of the level shift circuit. In a preferred embodiment, a Schottky diode is provided in the output section of a bandgap reference voltage generator which matches the temperature dependence of a Schottky diode in the input section of the level shift circuit. As temperature shifts, the threshold voltage will shift in a manner that tracks the temperature-produced shift in the input voltage as it passes through the Schottky diode in the input section of the level shift circuit. Matched PNP or NPN transistors may also be used in the input section of the level shift circuit and in the output section of the bandgap reference voltage generator.

Abstract: A random access read/write MOS memory device consisting of an array of rows and columns of one-transistor memory cells employs a bistable sense amplifier circuit at the center of each column. The sense amplifier is of the dynamic type in that coupling transistors connect the column line halves to the cross-coupled driver transistors. The sources of the driver transistors are connected to ground through a sequentially timed, three step grounding arrangement employing two transistors, one having a dual channel implanted to provide two different threshold voltages. Active load devices connected to the column line halves provide pull-up of the voltage on the one-going column line half to a full Vdd level.

Abstract: First and second networks each comprised of two low-on-impedance transistors having their conduction paths connected in series are connected between first and second circuit outputs and a power terminal. In response to a signal transition of one polarity the two transistors of one network are momentarily turned-on to clamp its associated output to the power terminal. In response to a signal transition of opposite polarity the two transistors of the other network are momentarily turned-on to clamp its associated output to the power terminal.

Abstract: A bidirectional counting circuit for use with a transducer producing two pulses per engineering unit includes an UP/DOWN counter which receives separate UP and DOWN input pulses from the transducer through respective AND gates. A synchronizing flip-flop, which switches states in response to either an UP or DOWN pulse, alternately enables the AND gates and effectively divides the input pulses by two. The state of the flip-flop is used to control a display digit to add the suffix "5" or "0" to the displayed counter content in order to display one-half engineering unit resolution. The circuit includes automatic and manual zeroing capability and a direction indicator.

Abstract: A logic circuit comprises a first and second circuit. The first circuit consists of at least one first conductivity-type MOSFET having a gate connected to an input terminal, and having a first current path connected at one end to an output terminal. The second circuit consists of at least one second conductivity-type MOSFET having a gate is connected to the input terminal, and having a second current path connected at one end to the output terminal. The logical circuit further comprises a depletion-type MOSFET of the second conductivity type and a depletion-type MOSFET of the first conductivity type. The depletion-type MOSFET of the second conductivity type has a threshold voltage the absolute value of which is larger than that of the first conductivity-type MOSFET, has a current path connected between the other end of the first current path and a first power source, and has a gate connected to the output terminal.

Abstract: Logic circuit means for providing a binary output which is a predetermined logical function of a plurality of binary inputs, said logic circuit means including: at least first, second and third push-pull Darlington current sink (PPDCS) logic circuits, each said PPDCS logic circuit comprising: first, second and third transistors, each of said first, second and third transistors having an emitter, base and collector, said collector of said third transistor connected to a first source of potential and said emitter of said second transistor connected to a third source of potential; input circuit means, said input circuit means being adapted to receive n binary inputs, where n is a positive integer having a magnitude of two or greater, said input circuit means being connected to said collector of said first transistor and said base of said third transistor; a first resistor connected between said emitter of said first transistor and a second source of potential; a second resistor connected between said first sourc

Abstract: A tristate driver circuit is provided on an integrated circuit chip for driving a bus line or signal line located off of the chip. This circuit very rapidly charges the bus line or signal line to positive voltage level each time and just before it switches to its tristate or high impedance output condition. This eliminates the need for a pull-up resistor or pull-up transistor to be connected to the off-chip bus line or signal line.

Abstract: A I.sup.2 L circuit device including logical operation circuits comprising I.sup.2 L elements, wherein when main power supply is interrupted, an injector current is injected from an auxiliary current source circuit into part of the I.sup.2 L circuit device to thereby hold a logical value, so that when the main power supply is restored, the logical state having been prevailing prior to the interruption of the main power supply is restored. When applied to a drive circuit for a switch including a self-restore type contact, for example, this I.sup.2 L circuit device is operative such that the switch is set to a predetermined logical value; the logical value is stored in a storage circuit of the I.sup.

Abstract: A sense amplifier latch voltage waveform generator circuit provides an output voltage waveform which first increases to a first potential level, which is just below the threshold voltage of a field effect transistor, and subsequently increases with an ever-increasing slope over a useful voltage range. The generated voltage waveform is applied to the gate terminal of a latch field effect transistor, which is part of a sense amplifier circuit that includes a cross-coupled pair of field effect transistors whose sources are coupled to the drain of the latch transistor and whose drain terminals receive differential memory signals. The generator circuit consists essentially of an input gating transistor, an output stage having serially connected pull-up and pull-down transistors, and another similar feedback stage which includes a bootstrap capacitor. The bootstrap capacitor is coupled to the output stage.

Abstract: The clock signal to a fine delay shift register is divided by the number of fine delay bits for application to a coarse delay shift register such that two serially connected shift registers can provide a range of delays equivalent to a shift register having a number of bits equal to the product of the bits of the two shift registers.

Abstract: Disclosed is a means for enhancing logic circuit performance and more particularly, for enhancing the switching speeds of a variety of logic circuits. What is involved is the insertion of a so called "snap" or enhancement transistor connected to a common node defining an output of a basic logic circuit. In one example, the emitter of this "snap" transistor is connected to an output node in the circuit, which in conventional practice would be charged during an upgoing transition by a fixed RC time constant. In accordance with the present improvement, however, the "snap" transistor, due to charge stored therein, remains conducting--although the associated logic device is turned off. This current discharges as reverse base current and the output provides what appears to be an inductive voltage spike. The effect is that a temporary source of current is available to charge the common node.

Abstract: An integrated circuit device containing internal logic and/or memory circuitry is provided with means to receive multiple inputs at the voltage levels of different logic families and with means to provide multiple outputs at the voltage levels of different logic families. On-chip input translators receive the inputs at the level of a given logic family and translate to the level required by the internal logic and/or memory circuitry. After performance of logic and/or memory functions, on-chip output translators translate the output of the internal logic and/or memory circuitry and provide external outputs at the voltage levels of different logic families. The internal logic and/or memory circuitry may be of a single logic family or may be composed of several logic families. On-chip translators may also be added between internal logic and/or memory circuitry of different families.