Patents Examined by Mahmoud Dahimene
  • Patent number: 9803107
    Abstract: The present invention relates to a polishing agent including: cerium oxide particles; a water-soluble polyamine; potassium hydroxide; at least one selected from an organic acid and a salt thereof; and water, in which the polishing agent has a pH of 10 or more, a polishing method using the polishing agent, and a method for manufacturing a semiconductor integrated circuit device.
    Type: Grant
    Filed: February 10, 2016
    Date of Patent: October 31, 2017
    Assignee: ASAHI GLASS COMPANY, LIMITED
    Inventors: Masaru Suzuki, Toshihiko Otsuki
  • Patent number: 9805945
    Abstract: Disclosed is a method for selectively etching a first region made of silicon oxide to a second region made of silicon nitride. The method includes: performing a first sequence once or more to etch the first region; and performing a second sequence once or more to further etch the first region. The first sequence includes: a first step of generating plasma of a processing gas containing a fluorocarbon to form a fluorocarbon-containing deposit on a workpiece; and a second step of etching the first region by radicals of the fluorocarbon. The second sequence includes: a third step of generating plasma of a processing gas containing a fluorocarbon gas to form a fluorocarbon-containing deposit on a workpiece; and a fourth step of generating plasma of a processing gas containing oxygen gas and an inert gas in the processing container.
    Type: Grant
    Filed: June 16, 2016
    Date of Patent: October 31, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Akira Hidaka, Soichiro Kimura, Masaru Sugimoto
  • Patent number: 9803286
    Abstract: Provided is a method of etching a copper layer. The method includes generating plasma of a processing gas within a processing container which accommodates an object to be processed that includes the copper layer and a metal mask formed on the copper layer. The metal mask contains titanium. In addition, the processing gas includes CH4 gas, oxygen gas, and a noble gas. In an exemplary embodiment, the metal mask may include a layer made of TiN.
    Type: Grant
    Filed: October 13, 2014
    Date of Patent: October 31, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Eiichi Nishimura, Keiichi Shimoda, Kei Nakayama
  • Patent number: 9779986
    Abstract: Provided is a plasma treatment method including: placing a substrate carrier holding a substrate on a stage; adjusting a distance between a cover and the stage to a first distance in which the cover covers a frame without coming into contact with the substrate carrier; performing a plasma treatment on the substrate placed on the stage after the adjusting of the distance; carrying the substrate together with the substrate carrier out from a reaction chamber after the performing of the plasma treatment; and removing an adhered substance adhered to the cover by generating plasma in the inside of the reaction chamber after the carrying of the substrate, in which the distance between the cover and the stage in the removing of the adhered substance is a second distance greater than the first distance.
    Type: Grant
    Filed: August 23, 2016
    Date of Patent: October 3, 2017
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Atsushi Harikai, Noriyuki Matsubara, Hideo Kanou, Mitsuru Hiroshima, Syouzou Watanabe, Toshihiro Wada
  • Patent number: 9779941
    Abstract: In a method of forming patterns of a semiconductor device, an object layer is formed on a substrate. A plurality of guiding pillars and at least one guiding dam are formed on the object layer. A self-aligned layer including a block copolymer is formed in a space between the guiding pillars and the guiding dam, such that first blocks aligned around the guiding pillars and second blocks aligned around the guiding dam are formed. A trim pattern at least partially covering the guiding dam is formed. The first blocks are transferred in the object layer.
    Type: Grant
    Filed: June 30, 2016
    Date of Patent: October 3, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventor: Seok-Han Park
  • Patent number: 9773674
    Abstract: A method of etching a layer including at least one pattern that has flanks is provided, including at least one step of modifying the layer by putting the layer in presence with a plasma into which CxHy is introduced and which includes ions heavier than hydrogen; and wherein the plasma creates a bombardment of ions with a hydrogen base coming from the CxHy, the bombardment being anisotropic according to a main direction of implantation parallel to the flanks and so as to modify portions of the layer that are inclined with respect to the main direction and so as to retain unmodified portions on the flanks, wherein chemical species of the plasma form a carbon film on the flanks; and at least one step of removing the modified layer to be etched using a selective etching of modified portions of the layer with respect to the carbon film.
    Type: Grant
    Filed: June 17, 2016
    Date of Patent: September 26, 2017
    Assignee: COMMISARIAT A L'ENERGIE ATOMIQUE AUX ENERGIES ALTERNATIVES
    Inventor: Nicolas Posseme
  • Patent number: 9767991
    Abstract: For a first period of time, a higher radiofrequency power is applied to generate a plasma in exposure to a substrate, while applying low bias voltage at the substrate level. For a second period of time, a lower radiofrequency power is applied to generate the plasma, while applying high bias voltage at the substrate level. The first and second periods of time are repeated in an alternating and successive manner for an overall period of time necessary to produce a desired effect on the substrate. In some embodiments, the first period of time is shorter than the second period of time such that on a time-averaged basis the plasma has a greater ion density than radical density. In some embodiments, the first period of time is greater than the second period of time such that on a time-averaged basis the plasma has a lower ion density than radical density.
    Type: Grant
    Filed: November 4, 2015
    Date of Patent: September 19, 2017
    Assignee: Lam Research Corporation
    Inventors: Zhongkui Tan, Qian Fu, Ying Wu, Qing Xu
  • Patent number: 9766590
    Abstract: The method makes it possible to produce a decorated component for a timepiece or piece of jewellery. This component provided with the decoration may be, for example, a watch hand. To produce said component, a base substrate is used and a micromachining operation is performed on or in the base substrate to obtain an upper part of the component, which is provided with the decoration. The decoration is produced through the thickness of the upper part and in a programmed pattern. Thereafter, the upper part is placed on a luminescent or colored substance to obtain the component.
    Type: Grant
    Filed: October 21, 2015
    Date of Patent: September 19, 2017
    Assignee: Nivarox-FAR S.A.
    Inventor: Marc Stranczl
  • Patent number: 9761454
    Abstract: A method of polishing a SiC substrate by supplying a polishing liquid and bringing a polishing pad into contact with the SiC substrate is provided. The polishing liquid contains a permanganate, inorganic salts having an oxidizing ability, and water. The method includes: a first polishing step of polishing the SiC substrate by use of a first polishing pad; and a second polishing step of polishing the SiC substrate by use of a second polishing pad softer than the first polishing pad after the first polishing step.
    Type: Grant
    Filed: October 28, 2015
    Date of Patent: September 12, 2017
    Assignee: DISCO CORPORATION
    Inventors: Katsuyoshi Kojima, Takeshi Sato
  • Patent number: 9753367
    Abstract: The method includes forming a graphite layer on a substrate, forming a supporting layer on the graphite layer to form a stack of the graphite layer and the supporting layer, removing the substrate to separate the stack from the substrate, transferring the stack of the graphite layer and the supporting layer onto a frame, and removing the supporting layer from the frame.
    Type: Grant
    Filed: December 17, 2015
    Date of Patent: September 5, 2017
    Assignees: Samsung Electronics Co., Ltd., Research & Business Foundation Sungkyunkwan University
    Inventors: Munja Kim, Ji-Beom Yoo, Sooyoung Kim, Taesung Kim, Dong-Wook Shin, Hwanchul Jeon, Seul-Gi Kim
  • Patent number: 9748109
    Abstract: An IC device manufacturing process effectuates a planar recessing of material that initially varies in height across a substrate. The method includes forming a polymer coating, CMP to form a planar surface, then plasma etching to effectuate a planar recessing of the polymer coating. The material can be recessed together with the polymer coating, or subsequently with the recessed polymer coating providing a mask. Any of the material above a certain height is removed. Structures that are substantially below that certain height can be protected from contamination and left intact. The polymer can be a photoresist. The polymer can be provided with suitable adhesion and uniformity for the CMP process through a two-step baking process and by exhausting the baking chamber from below the substrate.
    Type: Grant
    Filed: February 19, 2016
    Date of Patent: August 29, 2017
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wen-Kuei Liu, Teng-Chun Tsai, Kuo-Yin Lin, Shen-Nan Lee, Yu-Wei Chou, Kuo-Cheng Lien, Chang-Sheng Lin, Chih-Chang Hung, Yung-Cheng Lu
  • Patent number: 9738560
    Abstract: A method of manufacturing a glass substrate to control the fragmentation characteristics by etching and filling trenches in the glass substrate is disclosed. An etching pattern may be determined. The etching pattern may outline where trenches will be etched into a surface of the glass substrate. The etching pattern may be configured so that the glass substrate, when fractured, has a smaller fragmentation size than chemically strengthened glass that has not been etched. A mask may be created in accordance with the etching pattern, and the mask may be applied to a surface of the glass substrate. The surface of the glass substrate may then be etched to create trenches. A filler material may be deposited into the trenches.
    Type: Grant
    Filed: May 24, 2016
    Date of Patent: August 22, 2017
    Assignee: International Business Machines Corporation
    Inventors: Cyril Cabral, Jr., Fuad E. Doany, Gregory M. Fritz, Michael S. Gordon, Qiang Huang, Eric P. Lewandowski, Xiao Hu Liu, Kenneth P. Rodbell, Thomas M. Shaw
  • Patent number: 9728422
    Abstract: Disclosed is a dry etching method for a laminated film in which at least one silicon layer and at least one silicon oxide layer are laminated together. The dry etching method includes generating a plasma gas from a dry etching agent and etching the laminated film with the plasma gas under the application of a bias voltage. The dry etching agent contains an unsaturated hydrofluorocarbon represented by the following formula: C3HxFy where x is an integer of 1 to 5; y is an integer of 1 to 5; and x and y satisfy a relationship of x+y=4 or 6, and iodine heptafluoride. The volume of the iodine heptafluoride in the dry etching agent is 0.1 to 1.0 times the volume of the unsaturated hydrofluorocarbon in the dry etching agent.
    Type: Grant
    Filed: January 21, 2016
    Date of Patent: August 8, 2017
    Assignee: Central Glass Company, Limited
    Inventors: Hiroyuki Oomori, Akiou Kikuchi
  • Patent number: 9725798
    Abstract: An apparatus for manufacturing a display device and a method of manufacturing a display device is disclosed. In one aspect, the apparatus includes a guider configured to guide a substrate on which a display portion is formed, a plasma sprayer configured to be spaced apart from the display portion and configured to spray plasma onto the substrate and a mask configured to be arranged over the substrate and cover the display portion. The mask includes a body portion configured to face the display portion and a protrusion portion formed at an end of the body portion and configured to extend towards the substrate.
    Type: Grant
    Filed: January 15, 2015
    Date of Patent: August 8, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Suhwan Lee, Eunho Kim
  • Patent number: 9718991
    Abstract: A chemical mechanical polishing slurry for polishing a stainless steel substrate is provided, which comprises a content 10˜50 wt % of abrasive particles, a content 0.001˜2.0 wt % of a coolant, a content 0.001˜1.0 wt % of an oxidant, a content 10˜5000 ppm of a lubricity improver, and a content 10˜5000 ppm of a foam inhibitor. A particle size of the abrasive particles is in a range of 20˜500 nm. The alkaline polishing slurry according to the present invention is capable of increasing the polishing performance, surface quality, and surface passivation effect after the chemical-mechanical polishing process.
    Type: Grant
    Filed: May 28, 2015
    Date of Patent: August 1, 2017
    Assignee: UWIZ TECHNOLOGY CO., LTD.
    Inventors: Yi Han Yang, Wen Cheng Liu, Ming Che Ho, Ming Hui Lu, Song Yuan Chang
  • Patent number: 9716014
    Abstract: A method according to an embodiment includes (i) a step of preparing a workpiece in a processing container of a plasma processing apparatus, (ii) a first plasma processing step of generating a plasma of a first processing gas, which contains chlorine, in the processing container, (iii) a second plasma processing step of generating a plasma of a second processing gas, which contains fluorine, in the processing container, and (iv) a third plasma processing step of generating a plasma of a third processing gas, which contains oxygen, in the processing container. A plurality of sequences, each of which includes the first plasma processing step, the second plasma processing step, and the third plasma processing step, are performed.
    Type: Grant
    Filed: May 9, 2016
    Date of Patent: July 25, 2017
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Fumiya Kobayashi, Masahiro Ogasawara
  • Patent number: 9711168
    Abstract: A method provides magnetic write apparatus. A side shield location layer having a location corresponding to the side shield(s) and back and side surfaces is provided. Part of the back surface corresponds to the back surface of the side shield. A nonmagnetic layer adjoining the back and side surface(s) of the side shield location layer is provided. A pole trench is formed in the layers using a first etch process. The nonmagnetic and side shield location layers have an etch selectivity of at least 0.9 and not more than 1.1 for the first etch. A pole is provided in the pole trench. A remaining portion of the side shield location layer is removed using a wet etch. The nonmagnetic layer is nonremovable by the wet etch. Side shield(s) having a back surface substantially the same as the back surface of the side shield location layer are provided.
    Type: Grant
    Filed: May 17, 2016
    Date of Patent: July 18, 2017
    Assignee: WESTERN DIGITAL (FREMONT), LLC
    Inventors: Xiaoyu Yang, Jinqiu Zhang, Feng Liu, Xiaotian Zhou, Hai Sun, Ming Jiang
  • Patent number: 9691618
    Abstract: Provided are a semiconductor device fabricating apparatus configured to perform an atomic layer etching process and a method of fabricating a semiconductor device including performing the atomic layer etching process. The method includes loading a wafer onto an electrostatic chuck in a chamber, performing a first periodical process in which a first gas is supplied to an inside of the chamber and the first gas is adsorbed onto the wafer, performing a second periodical process in which a second gas is supplied to the inside of the chamber and the first gas remaining in the chamber is exhausted to an outside of the chamber, performing a third periodical process in which a third gas is supplied to the inside of the chamber, plasma including the third gas is generated, the plasma collides with the wafer, and the first gas adsorbed onto the wafer is removed, and unloading the wafer to the outside of the chamber.
    Type: Grant
    Filed: November 13, 2015
    Date of Patent: June 27, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dougyong Sung, Sejin Oh, Je-Hun Woo, Hyunju Lee, Seungkyu Lim, Kiho Hwang
  • Patent number: 9651869
    Abstract: A method for preparing a wafer includes forming a film layer on a substrate of the wafer; coating the film layer with a photoresist layer; exposing a first portion of the photoresist layer to a beam of light; and patterning a second portion of the photoresist layer after performing exposing the first portion of the photoresist layer. A cross-link reaction is caused on the first portion of the photoresist layer and the first portion of the photoresist layer is converted to a reacted first portion of the photoresist layer. The reacted first portion of the photoresist layer is near an edge of the wafer. The second portion of the photoresist layer is different from the reacted first portion of the photoresist layer. The second portion of the photoresist layer is converted to a patterned second portion of the photoresist layer.
    Type: Grant
    Filed: April 7, 2015
    Date of Patent: May 16, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Wei Chang, Wang-Pen Mo, Hung-Chang Hsieh
  • Patent number: 9650544
    Abstract: A polishing composition contains silicon dioxide, a water-soluble polymer, and water. An adsorbate containing at least part of the water-soluble polymer is adsorbed on the silicon dioxide. The adsorbate is contained in a concentration of 4 ppm by mass or more in terms of carbon. A percentage of the concentration of the adsorbate in terms of carbon relative to a total carbon concentration in the polishing composition is 15% or more.
    Type: Grant
    Filed: August 12, 2013
    Date of Patent: May 16, 2017
    Assignee: FUJIMI INCORPORATED
    Inventors: Kohsuke Tsuchiya, Maki Asada