Abstract: A method for determining a leakage current through an inter-gate dielectric structure of a flash memory cell, the flash memory cell including a substrate including a channel region; a floating gate positioned above the channel region and separated from the channel region by a tunnel dielectric layer; a control gate positioned above the floating gate and separated from the floating gate electrode by the inter-gate dielectric structure; the method including programming the flash memory cell into an initial programmed state and applying biasing conditions to the programmed flash memory cell so as to obtain a zero electric field in the tunnel dielectric layer; measuring over time a change in a threshold voltage of the flash memory cell; and determining the leakage current from the change in the threshold voltage.

Abstract: A memory device may include: a cell array comprising a main area and an adjacent area with a plurality of main memory cells disposed in the main area and a plurality of adjacent memory cells disposed in the adjacent area; a control circuit suitable for controlling a row operation and column operation of the cell array; and an adjacent area controller suitable for controlling adjacent memory cells so that the adjacent memory cells are operated under a different condition from the main memory cells.

Abstract: A nonvolatile memory device includes a memory cell, and a switching unit. The memory cell includes a cell transistor having a floating gate and a coupling capacitor connected to the floating gate. The switching unit is coupled between the coupling capacitor and a bias terminal, and switches on or off based on the comparison result between a cell current flowing through the memory cell with a reference current during a program operation for programming the memory cell.

Abstract: A semiconductor device includes a plurality of memory cells, an access circuit configured to perform a data read operation, a data write operation and a data refresh operation on the memory cells, the access circuit to operate in a selected one of a first mode that is ready to perform and a second mode that is not ready to perform, and a judgment circuit configured to respond to first command information, to cause, when the access circuit is in the first mode, the access circuit to perform the data refresh operation, and to cause, when the access circuit is in the second mode, the access circuit to exit from the second mode and then to perform the refresh operation.

Abstract: Aspects of the disclosure provide an integrated circuit (IC) chip having a memory controller. The memory controller includes a memory interface circuit configured to interface the IC chip with a memory chip having a memory array, and a first control circuit. The memory chip has a configuration circuit for adjusting one or more configurations of the memory chip. The first control circuit is configured to control the memory interface circuit and to communicate with the configuration circuit in the memory chip via the memory interface circuit to adjust the one or more configurations of the memory chip.

Abstract: Systems and methods for controlling a sense amplifier are provided. First and second MOS transistors of a first type are connected in series between a first voltage potential and a node. A gate terminal of the first MOS transistor is coupled to a first data. A gate terminal of the second MOS transistor is coupled to a second data line. A third MOS transistor of a second type is connected between the node and a second voltage potential. The third MOS transistor has a gate terminal coupled to the first data line. A fourth MOS transistor of the second type is connected between the node and the second voltage potential in a parallel arrangement with the third MOS transistor. The fourth MOS transistor has a gate terminal coupled to the second data line. A control signal provided to a sense amplifier is based on a voltage of the node.

Abstract: Methods to maintain values representing data in a memory are disclosed. A method may include identifying a plurality of in-use portions of the memory currently used to store data and recording which in-use portion was a last portion of the memory to be rewritten. Responsive to a trigger signal, data is read from a selected one of the in-use portions of the memory adjacent to the last portion. The method may also include storing the read data into a buffer to form buffered data, and rewriting the buffered data into the memory.

Abstract: Cross-point memory cells, non-volatile memory arrays, methods of reading a memory cell, methods of programming a memory cell, and methods of writing to and reading from a memory cell are described. In one embodiment, a cross-point memory cell includes a word line extending in a first direction, a bit line extending in a second direction different from the first direction, the bit line and the word line crossing without physically contacting each other, and a capacitor formed between the word line and the bit line where such cross. The capacitor comprises a dielectric material configured to prevent DC current from flowing from the word line to the bit line and from the bit line to the word line.

Abstract: According to one embodiment, a semiconductor storage device includes a first memory area, a first selection circuit for selecting a bit line of the first memory area, a second memory area, a second selection circuit for selecting a bit line of the second memory area, and a third selection circuit arranged between the first selection circuit and the second selection circuit and configured to select either the first selection circuit or the second selection circuit.

Abstract: A method of erasing a non-volatile memory device which includes a plurality of NAND strings is provided as follows. A first voltage is applied to each of word lines for a corresponding effective erasing execution time. An erase operation is performed on memory cells connected to each of the word lines for the corresponding effective erasing execution time. A second voltage is applied to each of at least some word lines among the word lines for a corresponding erasing-prohibited time after the corresponding effective erasing execution time elapses. A sum of the corresponding effective erasing execution time and the corresponding erasing-prohibited time for each of the at least some word lines is substantially equal to an erasure interval during which an erase operation is performed using the first voltage and the second voltage higher than the first voltage. The word lines are stacked on a substrate.

Abstract: A flash memory controller is configured to provide a first erase mode for erasing one or more groups of flash memory cells in a flash memory device using a plurality of erase pulses and a second erase mode for erasing the one or more groups of flash memory cells using a single erase pulse. The controller may receive a fast erase signal to erase the one or more groups of flash memory cells and, in response to the signal, switch operating parameters of the flash memory device from first parameters corresponding to the first erase mode to second parameters corresponding to the second erase mode, and instruct the flash memory device to perform an erase operation on the one or more groups of flash memory cells according to the second parameters. The controller may then verify that the erase operation was completed using the single erase pulse.

Abstract: A fuse memory comprising a discharge circuit is provided. The fuse memory includes a fuse cell array comprising fuse cells connected to read word lines, programs word lines, and bit lines arranged in rows and columns; and at least one discharge circuit arranged in each of the rows. The discharge circuit discharges a voltage level of a program word line of the fuse cells selected in a read mode to a ground voltage.

Abstract: A memory device may include a calibration circuit configured to perform a calibration operation of generating a pull-up control code and a pull-down control code in a calibration mode, and in a stress applying mode, turn on at least one of each of first and second transistor units to apply stress, and an on-die termination (ODT)/off-chip driver (OCD) circuit, a resistance value of the ODT/OCD circuit being adjusted in response to at least one of the pull-up control code and the pull-down control code. The calibration circuit includes a pull-up control code generator including the first transistor unit and a pull-down control code generator including the second transistor unit.

Abstract: Integrated circuits with memory cells and methods of programming the memory cells are provided. In an exemplary embodiment, a method of programming a memory cell includes determining a memory cell temperature for a memory cell within an integrated circuit. A pulse number is determined, where the pulse number is the number of electrical pulses at a set voltage required to program the memory cell at the memory cell temperature. The memory cell is programmed with a write operation, where the write operation includes the pulse number of electrical pulses.

Abstract: A semiconductor device with a memory unit of which the variations in the operation timing are reduced is provided. For example, the semiconductor device is provided with dummy bit lines which are arranged collaterally with a proper bit line, and column direction load circuits which are sequentially coupled to the dummy bit lines. Each column direction load circuit is provided with plural NMOS transistors fixed to an off state, predetermined ones of which have the source and the drain suitably coupled to any of the dummy bit lines. Load capacitance accompanying diffusion layer capacitance of the predetermined NMOS transistors is added to the dummy bit lines, and corresponding to the load capacitance, the delay time from a decode activation signal to a dummy bit line signal is set up. The dummy bit line signal is employed when setting the start-up timing of a sense amplifier.

Abstract: Improved STT MRAM midpoint reference cell configurations are provided. In one aspect, a STT MRAM midpoint reference cell includes: a plurality of word lines having at least one write reference word line and at least one read reference word line; a plurality of bit lines perpendicular to the word lines; at least one source line perpendicular to the bit lines; at least one first magnetic tunnel junction in series with i) a first field effect transistor gated by the write reference word line and ii) a second field effect transistor gated by the read reference word line; and at least one second magnetic tunnel junction in series with iii) a third field effect transistor gated by the write reference word line and iv) a fourth field effect transistor gated by the read reference word line. A method of operating a STT MRAM midpoint reference cell is also provided.

Abstract: A semiconductor system includes a first semiconductor device configured to output command addresses; and a second semiconductor device configured to generate a first control signal including a pulse controlled in its pulse width in synchronization with a toggling time of a bank active signal for selecting a bank to be activated in an active operation in response to the command addresses, a second control signal enabled in response to the bank active signal, and an internal voltage in response to the first and second control signals.

Abstract: Systems, apparatuses, and methods for tracking a retention voltage are disclosed. In one embodiment, a circuit is utilized for generating a standby voltage for a static random-access memory (SRAM) array. The circuit tracks the leakage current of the bitcells of the SRAM array as the leakage current varies over temperature. The circuit mirrors this leakage current and tracks the higher threshold voltage of a p-channel transistor or an n-channel transistor, with the p-channel and n-channel transistors matching the transistors in the bitcells of the SRAM array. The circuit includes a voltage regulator to supply power to the SRAM array at a supply voltage proportional to the higher threshold voltage tracked. Setting a supply voltage of the SRAM array based on threshold voltages and leakage current may reduce power consumption as compared to using a supply voltage based on a worst case operating conditions assumption for the SRAM array.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. Limiting current between terminals of the non-volatile memory device during read operations may enable use of higher voltages for higher realized gain.

Abstract: Methods, systems, and devices for operating a ferroelectric memory cell or cells are described. Before reading a memory cell, the voltage on an access line of the memory cell may be initialized to a value associated with the threshold voltage of a switching component in electronic communication with the memory cell. The voltage may be initialized by reducing the existing voltage on the access line to the value. The switching component or an additional pull down device, or both, may be used to reduce the voltage of the access line. After the access line has been initialized to the value, the read operation may be triggered.