Abstract: A display backplane includes a base, a plurality of driving electrodes disposed above the base, and a connection structure disposed on at least one of the plurality of driving electrodes. An orthographic projection of the connection structure on the base is within an orthographic projection of a corresponding driving electrode on the base; and the connection structure includes at least one conductive portion disposed at a first included angle with the corresponding driving electrode.

Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer, wherein the first semiconductor layer, the active layer, and the second semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

Abstract: A light source device includes a substrate, a light emitting unit, a frame, a light permeable member, and a metal shield. An upper electrode layer and a lower electrode layer of the substrate are respectively disposed on two opposite sides of the substrate, and are electrically coupled to each other. The light emitting unit is disposed on the upper electrode layer. The frame is disposed on the substrate and is arranged around the light emitting unit. The light permeable member is disposed on the frame and covers the light emitting unit. The metal shield is fixed to an inner side of the frame and is connected to the ground pad of the upper electrode layer. The metal shield is arranged around the outer side of the light emitting unit.

Abstract: A semiconductor device includes: a first electrode provided on a semiconductor multilayer structure; a second electrode provided on a substrate; and a bonding metal layer which bonds the first electrode and the second electrode together. The bonding metal layer includes a gap inside.

Abstract: An optical sensor includes a semiconductor substrate having a first conductive type. The optical sensor further includes a photodiode disposed on the semiconductor substrate and a metal layer. The photodiode includes a first semiconductor layer having the first conductive type and a second semiconductor layer, formed on the first semiconductor layer, including a plurality of cathodes having a second conductive type. The first semiconductor layer is configured to collect photocurrent upon reception of incident light. The cathodes are configured to be electrically connected to the first semiconductor layer and the second semiconductor layer is configured to, based on the collected photocurrent, to track the incident light. The metal layer further includes a pinhole configured to collimate the incident light, and the plurality of cathodes form a rotational symmetry of order n with respect to an axis of the pinhole.

Abstract: An LED display driven by a dual-negative-voltage power supply is provided. The LED display includes a power supply interface and a display module. The power supply interface includes a first electrode, a second electrode, and a third electrode. The display module includes a substrate, the substrate is provided with a connection terminal having a first port, a second port, and a third port. The first electrode is coupled with the first port via a first wiring harness. The second electrode is coupled with the second port via a second wiring harness. The third electrode is coupled with the third port via a third wiring harness. A potential difference between the first electrode and the second electrode provides a first voltage. A potential difference between the first electrode and the third electrode provides a second voltage. The display module is configured to be powered with the first and second voltages.

Abstract: An organic molecule is disclosed herein having a structure of formula I: wherein n=0 or 1 at each occurrence, m=1-n at each occurrence; i.e. if n is 1, m is 0 and vice versa, o=0 or 1 at each occurrence, and p=1-o at each occurrence; T is selected from the group consisting of a direct bond, NR3, Si(R3)2, C(R3)2, BR3, O, S, S(O) and S(O)2. V is selected from the group consisting of a direct bond, NR3, Si(R3)2, C(R3)2, BR3, O, S, S(O) and S(O)2. Z is at each occurrence independently form another selected from the group consisting of a direct bond, CR3R4, C?CR3R4, C?O, C?NR3, O, SiR3R4, S, S(O) and S(O)2.

Abstract: A display panel and a display device are provided in the present disclosure. The display panel includes a substrate and an array layer on the substrate, where the array layer includes a plurality of control units, one control unit includes a plurality of thin-film transistors, and the plurality of thin-film transistors in a same control unit is sequentially arranged along a ring-shaped path. The display panel further includes a plurality of light-emitting units on a side of the array layer away from the substrate. The plurality of light-emitting units and the plurality of control units are in a one-to-one correspondence. A light-emitting unit includes a plurality of light-emitting devices each having a first electrode. A plurality of first electrodes in a same light-emitting unit is sequentially arranged along an arrangement direction of the plurality of thin-film transistors in a control unit corresponding to the same light-emitting unit.

Abstract: A phosphor combination may include a first phosphor and a second phosphor. The second phosphor may be a red-emitting quantum dot phosphor. The phosphor combination may optionally include a third phosphor that is a red-emitting phosphor with the formula (MB) (TA)3-2x(TC)1+2xO4-4xN4x:E. A conversion element may include the phosphor combination. An optoelectronic device may include the phosphor combination and a radiation-emitting semiconductor chip.

Abstract: A memory device includes a transistor and a memory cell. The memory cell includes a bottom electrode, a top electrode, and a dielectric structure. The top electrode is electrically connected to the transistor. The dielectric structure includes a thin portion and a thick portion. The thin portion is sandwiched between the bottom electrode and the top electrode. The thick portion is thicker than the thin portion and between the bottom electrode and the top electrode.

Abstract: An optoelectronic device including: a first, p-doped semiconductor layer and a second, n-doped semiconductor layer which are superposed and form a p-n junction; a first electrode electrically connected to the first semiconductor layer and forming an anode of the device; a gate positioned against at least one lateral flank of the first semiconductor layer; a second electrode, positioned against a lateral flank of the second semiconductor layer, electrically connected to the second semiconductor layer and electrically isolated from the first semiconductor layer; and in which a portion of the second electrode is positioned against the gate such that the second electrode is electrically connected to the gate and forms both a gate electrode and a cathode of the device.

Abstract: A semiconductor light emitting chip includes a substrate and an N-type semiconductor layer sequentially developed from the substrate, an active region, a P-type semiconductor layer, a reflective layer, at least two insulating layers, an anti-diffusion layer and an electrode set. One of the insulating layers is extended to surround the inner peripheral portion of the reflective layer, and another the insulating layer is extended to surround the outer peripheral portion of the reflective layer, such that the insulating layer isolates the anti-diffusion layer from the P-type semiconductor layer. The electrode set includes an N-type electrode and a P-type electrode, wherein the N-type electrode is electrically connected to the N-type semiconductor layer, and the P-type electrode is electrically connected to the P-type semiconductor layer.

Abstract: A light-emitting unit and a method for manufacturing the same are provided. The light-emitting unit includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer that are distributed in a stacking manner. At least one of the first semiconductor layer or the second semiconductor layer is at least in contact with a part of layer surfaces and a part of side of the light-emitting layer, the first semiconductor layer is insulated from the second semiconductor layer, and one of the first semiconductor layer and the second semiconductor layer is an N-type semiconductor layer, and the other is a P-type semiconductor layer. The present disclosure is conducive to increasing the light-emitting area and the light extraction efficiency of the light-emitting unit.

Abstract: An image sensor includes a substrate including a plurality of pixel regions and one or more pairs of dummy pixel regions; a pixel separation structure between two adjacent pixel regions among the plurality of pixel regions and including a first conductive layer; a dummy pixel separation structure between the one or more pairs of dummy pixel regions, electrically connected to the pixel separation structure, and including a second conductive layer; and a pixel separation contact disposed on the dummy pixel separation structure.

Abstract: Disclosed is a light emitting diode (LED) assembly having vertical type micro LEDs which are vertically aligned and is capable of significantly improving light efficiency, a light quantity, and an integration degree through optimized alignment of the vertical type micro LEDs each having a nano size or micro size. The LED assembly includes a substrate provided with a plurality of through holes formed in a thickness direction, micro LEDs each formed in a vertical type in which a vertical width is greater than a lateral width, and aligned in an upright state by being at least partially inserted into the through holes, and a first electrode deposited on a lower surface of the substrate to be connected to a first conductive layer and a second electrode deposited on an upper surface of the substrate to be connected to a second conductive layer.

Abstract: A package structure is provided. The package structure includes a substrate, a pair of electrodes, a lighting unit, a wall, and a package compound. The pair of electrodes and the wall are disposed on the substrate, and the wall and the substrate jointly define an accommodating space. The lighting unit is disposed in the accommodating space. The package compound is disposed in the accommodating space such that a top end of the package compound has a W-shaped cross section and the lighting unit is embedded in the package compound.

Abstract: A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer.

Abstract: A light emitting device for a display including a first LED stack, a second LED stack disposed thereunder, a third LED stack disposed thereunder and including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, an insulation layer between the second bonding layer and the second LED stack, lower buried layers passing through the second LED stack and the insulation layer and electrically connected to the first and second conductivity type semiconductor layers of the third LED stack, respectively, upper buried layers passing through the first LED stack and the second bonding layer and electrically connected to the lower buried layers, and upper connectors disposed on the first LED stack and including upper connectors covering and electrically connected to the upper buried layers, respectively.

Abstract: A light emitting assembly comprising at least one of each of a solid state device and a thermal radiation source, couplable with a power supply constructed and arranged to power the solid state device and the thermal radiation source, to emit from the solid state device a first, relatively shorter wavelength radiation, and to emit from the thermal radiation source non-visible infrared radiation, and a down-converting luminophoric medium arranged in receiving relationship to said first, relatively shorter wavelength radiation, and the infrared radiation, and which in exposure to said first, relatively shorter wavelength radiation, and infrared radiation, is excited to responsively emit second, relatively longer wavelength radiation.

Abstract: Disclosed in an embodiment are a semiconductor device and a head lamp comprising the same, the semiconductor device comprising: a substrate; a plurality of semiconductor structures arranged at a center part of the substrate; first and second pads arranged at an edge part of the substrate; a first wiring line electrically connecting at least one of the plurality of semiconductor structures to the first pad; a second wiring line electrically connecting at least one of the plurality of semiconductor structures to the second pad; and a wavelength conversion layer arranged on the plurality of semiconductor structures, wherein the plurality of semiconductor structures is arranged to be spaced apart from each other in a first direction and a second direction, the first direction and the second direction cross each other, the interval distance between the plurality of semiconductor structures is 5 ?m to 40 ?m and the thickness of the wavelength conversion layer is 1 ?m to 50 ?m.