Abstract: Described are arrays of light emitting diode (LED) devices and methods for their manufacture. An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, the top surface comprising a second n-type layer on the tunnel junction. The LED array further comprises an adjacent mesa comprising a top surface, the first LED, a second LED including the second n-type layer, a second p-type layer and a second color active region. There is a first trench separating the first mesa and the adjacent mesa, n-type metallization in the first trench and in electrical contact with the first color active region and the second color active region of the adjacent mesa, and p-type metallization contacts on the n-type layer of the first mesa and on the p-type layer of the adjacent mesa.

Abstract: A semiconductor structure includes a high-k metal gate structure (HKMG) disposed over a channel region of a semiconductor layer formed over a substrate, where the HKMG includes an interfacial layer disposed over the semiconductor layer, a high-k dielectric layer disposed over the interfacial layer, and a gate electrode disposed over the high-k dielectric layer, where a length of the high-k dielectric layer is greater than a length of the gate electrode and where outer edges of the interfacial layer, the high-k dielectric layer, and the gate electrode form a step profile. The semiconductor structure further includes gate spacers having sidewall portions contacting sidewalls of the gate electrode and bottom portions contacting top portions of the high-k dielectric layer and the interfacial layer, and source/drain features disposed in the semiconductor layer adjacent to the HKMG.

Abstract: Disclosed is a semiconductor device including a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer. The semiconductor structure includes a first upper surface on which the first semiconductor layer is exposed, a second upper surface on which the second semiconductor layer is disposed, an inclined surface connecting the first upper surface and the second upper surface, and a recess formed between the first upper surface and the inclined surface. The recess has a depth less than or equal to 30% of a vertical distance between the first upper surface and the second upper surface.

Abstract: A micro light-emitting diode device includes a substrate, a micro light-emitting diode, a first protection layer and a second protection layer. The micro light-emitting diode is adapted to be disposed on the substrate. The first protection layer is disposed on a first portion of an outer side wall of the micro light-emitting diode and has a gap from the substrate. The second protection layer is disposed on a second portion of the outer side wall of the micro light-emitting diode. The second protection layer is located in the gap between the first protection layer and the substrate and covers a part of the first protection layer. A maximum thickness of the first protection layer on the outer side wall is less than a maximum thickness of the second protection layer on the outer side wall.

Abstract: A semiconductor light emitting element includes: an n-type semiconductor layer; an active layer provided in a first region on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; a first covering layer that is provided to cover a second region on the n-type semiconductor layer different from the first region, a side of the active layer, and the p-type semiconductor layer and that is made of aluminum oxide (Al2O3); an n-side contact electrode that extends through the first covering layer and is in contact with the n-type semiconductor layer; a p-side contact electrode that extends through the first covering layer and is in contact with the p-type semiconductor layer; and a second covering layer provided to cover the first covering layer, the n-side contact electrode, and the p-side contact electrode.

Abstract: A display device is provided. The display device includes a substrate having a first surface and a second surface opposite to the first surface, a plurality of light-emitting units disposed on the first surface of the substrate, and a plurality of conductive structures extending into the substrate from the second surface of the substrate. The plurality of conductive structures are electrically connected to the plurality of light-emitting units.

Abstract: A light-emitting device includes a semiconductor stacked body having first and second semiconductor layers. The second semiconductor layer includes conductive portions contacting a second conductive layer and having island configurations. The conductive portions are disposed in a first region, a second region, a third region, and a fourth region. The first region is positioned at a periphery of a first corner of the semiconductor stacked body. The second region is positioned at a periphery of a second corner of the semiconductor stacked body. The third region is positioned at a periphery of a third corner of the semiconductor stacked body. The fourth region is positioned at a periphery of a fourth corner of the semiconductor stacked body. A density of the conductive portions disposed in the first region is greater than densities of the conductive portions disposed in the second region, the third region, and the fourth region.

Abstract: A method for fabricating calcite channels in a nanofluidic device is described. A photoresist layer is coated onto a top surface of a silicon nitride (SiN) substrate. After coating the photoresist layer, the photoresist layer is scanned with an electron beam in a predefined pattern. The scanned photoresist is developed to expose portions of the top surface of the SiN substrate in the predefined pattern. Calcite is deposited in the predefined pattern using atomic layer deposition (ALD) using a calcite precursor gas. Using a solvent, a remaining portion of the photoresist layer is removed to expose the deposited calcite in the predefined pattern and on the top surface of the SiN substrate, where a width of the deposited calcite is in range from 50 to 100 nanometers (nm).

Abstract: In a semiconductor device including a transistor including a gate electrode formed over a substrate, a gate insulating film covering the gate electrode, a multilayer film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the multilayer film, a first oxide insulating film covering the transistor, and a second oxide insulating film formed over the first oxide insulating film, the multilayer film includes an oxide semiconductor film and an oxide film containing In or Ga, the oxide semiconductor film has an amorphous structure or a microcrystalline structure, the first oxide insulating film is an oxide insulating film through which oxygen is permeated, and the second oxide insulating film is an oxide insulating film containing more oxygen than that in the stoichiometric composition.

Abstract: The present invention relates to a display device and, particularly, to a display device using a semiconductor light emitting element. The display device according to the present invention comprises a plurality of semiconductor light emitting elements mounted on a substrate, wherein at least one of the semiconductor light emitting elements comprises: a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer in which the first conductive electrode is disposed; a second conductive semiconductor layer which overlaps the first conductive semiconductor layer and in which the second conductive electrode is disposed; a first passivation layer formed to cover outer surfaces of the first conductive semiconductor layer and the second conductive semiconductor layer; and a second passivation layer formed to cover the first passivation layer and formed such that at least a portion thereof varies in thickness.

Abstract: A display panel and a display device are provided. When manufacturing a first electrode, by depositing a first transparent electrode layer, a first metal layer, and a second transparent electrode layer on a region of the display panel, and etching the first transparent electrode layer, the first metal layer, and the second transparent electrode layer on the thinned-down region; and afterwards, depositing a third transparent electrode layer, a second metal layer, and a fourth transparent electrode layer, a first electrode of the display panel is formed.

Abstract: A method of fabricating a micro light emitting diode (micro LED) array substrate having a plurality of micro LEDs. The method includes forming a plurality of signal lines on a base substrate; depositing a semiconductor material on the base substrate to form a semiconductor material layer; and patterning the semiconductor material layer to form a semiconductor layer of the plurality of micro LEDs. A surface of the plurality of signal lines away from the base substrate is uncovered during depositing the semiconductor material. The plurality of signal lines form a grid for facilitating epitaxial growth of the semiconductor material.

Abstract: A light emitting diode includes a first conductivity type semiconductor layer and a mesa disposed on the first conductivity type semiconductor layer wherein the mesa is a semiconductor stack including an active layer and a second conductivity type semiconductor layer; a ZnO layer disposed on the second conductivity type semiconductor layer; a lower insulation layer covering the ZnO layer and the mesa, and including an opening exposing the ZnO layer; a first pad metal layer disposed on the lower insulation layer, and electrically connected to the first conductivity type semiconductor layer; a second pad metal layer electrically connected to the ZnO layer through the opening of the lower insulation layer, and an upper insulation layer covering the first pad metal layer and the second pad metal layer.

Abstract: A display device includes: a base layer including a first region in which a hole is defined, a second region surrounding the first region, and a third region surrounding the second region; a line part disposed on the second region and including first, second, third, and fourth lines disposed on different layers from each other; pixels disposed on the third region; first signal lines electrically connected to the pixels and arrayed along a first direction; and second signal lines electrically connected to the pixels and arrayed along a second direction, wherein one second signal line is electrically connected to the first line, another second signal line is electrically connected to the second line, one first signal line is electrically connected to the third line, and another first signal line is electrically connected to the fourth line.

Abstract: In a micro light emitting element, a first metal film electrically connected to a second conductive layer is disposed on a surface on an opposite side of a light emitting surface side. The first metal film covers the second conductive layer. A first inclined angle of a first conductive layer side surface from a slope formed around a light emission layer to the light emitting surface is larger than a second inclined angle of the slope. The slope and the first conductive layer side surface are covered together by a second metal film. A first transparent insulating film is disposed between the slope and the second metal film.

Abstract: A method of fabricating a micro light emitting diode (micro LED) display substrate. The method includes forming a definition layer on a growth substrate for defining a plurality of subpixel areas, the definition layer formed to include a plurality of lateral walls, each of the plurality of subpixel areas surrounded by a respective one of the plurality of lateral walls; forming a plurality of semiconductor layers of a plurality of micro LEDs on the growth substrate in the plurality of subpixel areas defined by the definition layer; transferring the plurality of semiconductor layers of the plurality of micro LEDs on the growth substrate onto a target substrate; and removing the growth substrate from the plurality of semiconductor layers of the plurality of micro LEDs transferred onto the target substrate.

Abstract: An organic light emitting display device including a base layer; an insulating layer disposed on the base layer and including a flat region having a flat surface and a lens region having a concave or convex surface; a dam disposed on the insulating layer and defining an opening exposing the lens region; and a color filter disposed on the lens region of the insulating layer and filling the opening, The dam includes a sensing electrode.

Abstract: A semiconductor light-emitting element includes: a semiconductor stack including an n-type, layer and a p-type layer and having at least one n exposure portion being a recess where the n-type layer is exposed; a p wiring electrode layer on the p-type layer; an insulating layer (i) continuously covering inner lateral surfaces of at least one n exposure portion and part of a top surface of the p wiring electrode layer and (ii) having an opening portion that exposes the n-type layer; an n wiring electrode layer disposed above the p-type layer and the p wiring electrode layer and in contact with the n-type layer in the opening portion; and at least one first n connecting member connected to the n wiring electrode layer in at least one first n terminal region. The n wiring electrode layer and the p-type layer are disposed below at least one first n terminal region.

Abstract: Provided are a display control circuit and a driving method thereof, and a display panel and manufacturing and controlling methods thereof, in the field of display technology. The display control circuit includes: a driving sub-circuit configured to provide a control signal from the control signal terminal to the control node; a first switching sub-circuit configured to provide a data signal from the data signal terminal to the OLED; and a second switching sub-circuit configured to provide the data signal to the liquid crystal display unit. The first switching sub-circuit and the second switching sub-circuit operate at different periods of time.

Abstract: An air cavity package includes a dielectric frame that is formed from an alumina ceramic, a polyimide, or a semi-crystalline thermoplastic. The dielectric frame is joined to a flange using a high temperature silicone adhesive. Leads may be bonded to the dielectric frame using a high temperature organic adhesive, a direct bond, or by brazing.