Abstract: Some demonstrative embodiments include a one-touch input interface. For example, a one-touch input interface may include a hybrid Body-Area-Network (BAN) Near-Field-Communication (NFC) module to receive NFC information from a NFC device via a body of a user; and a fingerprint sensor to sense a fingerprint of the user, wherein the hybrid BAN NFC module and the fingerprint sensor are to receive the NFC information and to sense the fingerprint during a touch of the one-touch interface by the user.

Abstract: Described herein are techniques related to near field coupling and WLAN dual-band operations. For example, a WLAN dual-band utilizes the same coil antenna that is utilized for near field communications (NFC) functions. The WLAN dual-band may be integrated into an NFC module to form a single module.

Abstract: Techniques are disclosed for forming transistor devices having reduced parasitic contact resistance relative to conventional devices. The techniques can be implemented, for example, using a standard contact stack such as a series of metals on, for example, silicon or silicon germanium (SiGe) source/drain regions. In accordance with one example such embodiment, an intermediate boron doped germanium layer is provided between the source/drain and contact metals to significantly reduce contact resistance. Numerous transistor configurations and suitable fabrication processes will be apparent in light of this disclosure, including both planar and non-planar transistor structures (e.g., FinFETs), as well as strained and unstrained channel structures. Graded buffering can be used to reduce misfit dislocation. The techniques are particularly well-suited for implementing p-type devices, but can be used for n-type devices if so desired.

Abstract: Described herein are techniques related to near field coupling (e.g., wireless power transfers (WPF) and near field communications (NFC)) operations among others. This Abstract is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: Various embodiments of the invention relate to a CMOS device having (1) an NMOS channel of silicon material selectively deposited on a first area of a graded silicon germanium substrate such that the selectively deposited silicon material experiences a tensile strain caused by the lattice spacing of the silicon material being smaller than the lattice spacing of the graded silicon germanium substrate material at the first area, and (2) a PMOS channel of silicon germanium material selectively deposited on a second area of the substrate such that the selectively deposited silicon germanium material experiences a compressive strain caused by the lattice spacing of the selectively deposited silicon germanium material being larger than the lattice spacing of the graded silicon germanium substrate material at the second area.

Abstract: Techniques are disclosed for customization of nanowire transistor devices to provide a diverse range of channel configurations and/or material systems within the same integrated circuit die. In accordance with one example embodiment, sacrificial fins are removed and replaced with custom material stacks of arbitrary composition and strain suitable for a given application. In one such case, each of a first set of the sacrificial fins is recessed or otherwise removed and replaced with a p-type layer stack, and each of a second set of the sacrificial fins is recessed or otherwise removed and replaced with an n-type layer stack. The p-type layer stack can be completely independent of the process for the n-type layer stack, and vice-versa. Numerous other circuit configurations and device variations are enabled using the techniques provided herein.

Abstract: A method for producing hydrogen using fuel cell off gases, the method feeding hydrocarbon fuel to a sulfur adsorbent to produce a desulfurized fuel and a spent sulfur adsorbent; feeding said desulfurized fuel and water to an adsorption enhanced reformer that comprises of a plurality of reforming chambers or compartments; reforming said desulfurized fuel in the presence of a one or more of a reforming catalyst and one or more of a CO2 adsorbent to produce hydrogen and a spent CO2 adsorbent; feeding said hydrogen to the anode side of the fuel cell; regenerating said spent CO2 adsorbents using the fuel cell cathode off-gases, producing a flow of hydrogen by cycling between said plurality of reforming chambers or compartments in a predetermined timing sequence; and, replacing the spent sulfur adsorbent with a fresh sulfur adsorbent at a predetermined time.

Abstract: Techniques are disclosed for forming transistor devices having reduced parasitic contact resistance relative to conventional devices. The techniques can be implemented, for example, using a standard contact stack such as a series of metals on, for example, silicon or silicon germanium (SiGe) source/drain regions. In accordance with one example such embodiment, an intermediate boron doped germanium layer is provided between the source/drain and contact metals to significantly reduce contact resistance. Numerous transistor configurations and suitable fabrication processes will be apparent in light of this disclosure, including both planar and non-planar transistor structures (e.g., FinFETs), as well as strained and unstrained channel structures. Graded buffering can be used to reduce misfit dislocation. The techniques are particularly well-suited for implementing p-type devices, but can be used for n-type devices if so desired.

Abstract: Described herein are techniques related one or more systems, apparatuses, methods, etc. for integrating a near field communications (NFC) coil antenna in a portable device. For example, the NFC antenna is integrated under a metal chassis of the portable device. The metal chassis and a conductive coating—that is integrated underneath the full metal chassis—are designed to include one or more slots to provide high impedance to Eddy current induced in the conductive coating.

Abstract: Embodiments include apparatuses, method, and systems for managing a transfer buffer associated with a non-volatile memory. In one embodiment, controller logic may be coupled to a non-volatile memory and a transfer buffer. The controller logic may read a plurality of sectors of data from the non-volatile memory and store the read sectors in the transfer buffer. The controller logic may further allocate individual sectors to pages according to a completion time of the read of individual sectors of the plurality of sectors, the individual pages including a plurality of the sectors. The controller logic may further write the pages of sectors to the non-volatile memory responsive to a determination that all sectors of the page have been read.

Abstract: The present disclosure relates to computer-implemented systems and methods for establishing communication using a body area network. A system may receive, by a capacitive sensor, a touch interaction from a user. Furthermore, the system may determine, by the capacitive sensor based at least in part on the touch interaction, a change in capacitance. In addition, the system may transmit, via the user's body in response to the change in capacitance, a request to a user device for credential information. The system may also receive, from the user device via the user's body, the credential information.

Abstract: The present disclosure relates to computer-implemented systems and methods for wireless communication via proximity detection. The method may include determining, by a computer via a plurality of induction coils in a proximity transponder, a magnetic field emitted from a base station. The computer may include one or more processors, a radio transceiver, and the proximity transponder. The method may also include transmitting, by the proximity transponder to the base station in response to the magnetic field, identification information. Additionally, the method may include receiving, from the base station, a verification of the identification information. The method may also include establishing, by the radio transceiver based at least in part on the verification, a radio connection with the base station.

Abstract: A thin film composite polyamide membrane having a porous support and a thin film polyamide layer comprising a reaction product of m-phenylene diamine (mPD) and trimesoyl chloride (TMC), characterized by the thin film polyamide layer having a critical strain value of less than 10%. In another embodiment, the thin film polyamide layer has a modulus of greater than 0.75 (GPa). In yet another embodiment, the thin film polyamide layer has an equilibrium swelling value of at least 45%. In another embodiment, the thin film polyamide layer has a thickness of at least 230 nm.

Abstract: Techniques are disclosed for forming low contact resistance transistor devices. A p-type germanium layer is provided between p-type source/drain regions and their respective contact metals, and an n-type III-V semiconductor material layer is provided between n-type source/drain regions and their respective contact metals. The n-type III-V semiconductor material layer may have a small bandgap (e.g., <0.5 eV) and/or otherwise be doped to provide desired conductivity, and the p-type germanium layer can be doped, for example, with boron. After deposition of the III-V material over both the n-type source/drain regions and the germanium covered p-type source/drain regions, an etch-back process can be performed to take advantage of the height differential between n and p type regions to self-align contact types and expose the p-type germanium over p-type regions and thin the n-type III-V material over the n-type regions. The techniques can be used on planar and non-planar transistor architectures.

Abstract: A thin film composite polyamide membrane including a porous support and a thin film polyamide layer which is a reaction product of m-phenylene diamine (mPD) and trimesoyl chloride (TMC), wherein the membrane is characterized by the thin film polyamide layer having a dissociated carboxylic acid content of at least 0.18 moles/kg at pH 9.5, and wherein pyrolysis of the thin film polyamide layer at 650 C results in a ratio of responses from a flame ionization detector for fragments produced at 212 m/z and 237 m/z of less than 2.8.

Abstract: Described herein are techniques related to near field coupling and proximity sensing operations. For example, a proximity sensor uses a coil antenna that is utilized for near field communications (NFC) functions. The proximity sensor may be integrated into an NFC module to form a single module.

Abstract: A wireless access point (300A, 300B, 300C) provides (101) a surrogate Internet Protocol address to use on behalf of a mobile station (401). That wireless access point then uses (102) that surrogate Internet Protocol address along with its own Internet Protocol address to facilitate establishing one or more data tunnels as necessary to support the communication needs of the mobile station.

Abstract: Mobile station information is exchanged between a plurality of distributed mobility agents (106, 108). The exchange is initiated by a mobility agent (106) associated with a last known network access point (110) that has communicated with the mobile station (114). The mobile station (114) is paged from at least one network access point using an available air interface technology to interface with the mobile station (114) and using the mobile station information. No centralized controller is used in the paging.

Abstract: A simple, compact process for cleansing hydrocarbon fuel such as jet fuel is disclosed. This process involves subjecting the fuel to an oxidative desulfurization process in a desulfurization reactor followed by passing the fuel through an adsorption bed. The cleansed desulfurized fuel may then be utilized directly in generation of hydrogen for fuel cell applications.

Abstract: Embodiments of the present disclosure provide techniques and configurations associated with conversion of thin transistor elements from silicon (Si) to silicon germanium (SiGe). In one embodiment, a method includes providing a semiconductor substrate having a channel body of a transistor device disposed on the semiconductor substrate, the channel body comprising silicon, forming a cladding layer comprising germanium on the channel body, and annealing the channel body to cause the germanium to diffuse into the channel body. Other embodiments may be described and/or claimed.