Abstract: Described herein are techniques related to near field coupling and proximity sensing operations. For example, a proximity sensor uses a coil antenna that is utilized for near field communications (NFC) functions. The proximity sensor may be integrated into an NFC module to form a single module.

Abstract: Described herein are techniques related to near field coupling and wireless power transfers. For example, a coil antenna configuration is the same in all portable devices; however, when the portable devices are arranged in back to back position with one another, the coil antenna configuration defines a dissymmetric and antenna configuration.

Abstract: Complimentary metal-oxide-semiconductor nanowire structures are described. For example, a semiconductor structure includes a first semiconductor device. The first semiconductor device includes a first nanowire disposed above a substrate. The first nanowire has a mid-point a first distance above the substrate and includes a discrete channel region and source and drain regions on either side of the discrete channel region. A first gate electrode stack completely surrounds the discrete channel region of the first nanowire. The semiconductor structure also includes a second semiconductor device. The second semiconductor device includes a second nanowire disposed above the substrate. The second nanowire has a mid-point a second distance above the substrate and includes a discrete channel region and source and drain regions on either side of the discrete channel region. The first distance is different from the second distance.

Abstract: Techniques are disclosed involving reconfigurable coils. Such coils may be used in applications, including (but not limited to) wireless charging and near field communications (NFC). For instance, a reconfigurable coil may include a first conductive portion and a second conductive portion. Two or more configurations may be established. These configurations may correspond to particular current paths. For example, in a circular configuration, a path is provided having the same rotational sense in both first and second conductive portions. However, in a figure eight configuration, a path is provided having a first rotational sense in the first conductive portion and a second rotational sense in the second conductive portion. A switch coupled between these portions may set the coil's configuration. Configurations may be selected based on one or more operating conditions involving the coil.

Abstract: A signal feed apparatus for an antenna including a slot through a conductive wall, comprises a non-conductive slot insert, a non-conductive block fixed to the slot insert and including first and second cable conduits and first and second plug sockets coinciding with first and second signal feed-points of the antenna. A signal cable is inserted into the cable conduits and includes first and second conductors. Conductive plugs are inserted into the first and second plug sockets to electrically connect the conductors to the first and second signal feed-points.

Abstract: Embodiments of the present disclosure provide techniques and configurations associated with conversion of thin transistor elements from silicon (Si) to silicon germanium (SiGe). In one embodiment, a method includes providing a semiconductor substrate having a channel body of a transistor device disposed on the semiconductor substrate, the channel body comprising silicon, forming a cladding layer comprising germanium on the channel body, and annealing the channel body to cause the germanium to diffuse into the channel body. Other embodiments may be described and/or claimed.

Abstract: Described herein are techniques related to near field coupling and wireless power transfers. A device may include a cascaded coil antenna to include a first coil antenna that is connected in series with a second coil antenna. The first and second coil antennas are independent antennas prior to cascading and are located in different surfaces of the device to establish near field coupling through front side, top side, bottom side, or corner side of the portable device. Furthermore, a flux guide may be placed in the cascaded coil antenna to facilitate magnetic flux at the first coil antenna and the second coil antenna to induce current of the same phase during receive mode. During transmit mode, the flux guide facilitates the magnetic flux at the first coil antenna and the second coil antenna to generate magnetic fields of the same direction.

Abstract: An embodiment includes determining estimate(s) of bandwidth for class(es) of quality of service to be implemented in base station(s) for service(s) provided to user equipment by the base station(s), determining expiration time(s) for corresponding ones of the estimate(s) of bandwidth, and communicating indications of the same toward mobile backhaul node(s). At a backhaul node, the indications are received and, based on the received indications, downstream bandwidth is modified for user equipment of different quality of service classes, wherein the downstream bandwidth passes through the mobile backhaul node toward the base station(s). Apparatus, software, and computer program produces are also disclosed.

Abstract: This document discloses one or more systems, apparatuses, methods, etc. for integrating coil antennas in a carbon fiber chassis portable device. More particularly, the carbon fiber chassis portable device containing unidirectional weave carbon fibers in its chassis—to support near field communications (NFC) related functions—is described.

Abstract: In an embodiment, a command that specifies a logical block to trim in a storage device is acquired. An entry in a logical-to-physical address (L2P) table that contains a physical address that corresponds to the logical block may be set to point to an invalid address. A trim token that specifies the logical block may be generated. The trim token may be stored in a non-volatile storage contained in the storage device.

Abstract: Apparatus, methods, computer program products, and software for reducing interference occurring when a capacity booster cell has a coverage area within the overlapping coverage areas of more than one coverage cell are disclosed. Essentially, weights are assigned, either by individual capacity booster cells or by zone controllers with which a plurality of capacity booster cells communicate, to coverage cells. The interfering coverage cells are ranked in accordance with the assigned weights, and the metrics to be reported to each of the interfering coverage cells are adjusted in view of the assigned weights. The adjusted metrics are then reported to each of the interfering coverage cells to influence the ABS muting pattern subsequently used by each of said interfering coverage cells.

Abstract: Embodiments of the present invention describe a epitaxial region on a semiconductor device. In one embodiment, the epitaxial region is deposited onto a substrate via cyclical deposition-etch process. Cavities created underneath the spacer during the cyclical deposition-etch process are backfilled by an epitaxial cap layer. The epitaxial region and epitaxial cap layer improves electron mobility at the channel region, reduces short channel effects and decreases parasitic resistance.

Abstract: Described herein are architectures, platforms and methods for integrating near field communication (NFC) coil antenna behind a screen display of devices and more particularly, to improve near field coupling capabilities of the devices by configuring the screen display to implement a context based software logo to guide a user. The context based software logo displays a tapping area location during NFC related functions.

Abstract: A circuit including headset type detection provides compatibility with different transducer types, such as headphones provided by different manufacturers. An audio circuit that generates or receives an audio signal includes electrical terminals for coupling to a transducer device, at least one of which carries the audio signal. A transducer device type detection circuit is included and detects a type of a transducer device coupled to the audio device from characteristics measured at the multiple electrical terminals when the transducer is coupled to the audio device. The circuit also includes a configuration control circuit for altering a configuration of the audio device according to a detected type of the transducer device.

Abstract: A network device may act as a proxy for a client requesting video from a server and may control the quality of the video requested from the server. The network device may detect a negotiation for a video stream, the negotiation including at least a first message from the client indicating a requested video quality by the client; and determine a maximum allowed video quality for the client. The network device may additionally determine whether the requested video quality by the client is greater than the maximum allowed video quality and modifying, when the requested video quality by the client is greater than the maximum allowed video quality, a first message to change the requested video quality to be equal to the maximum allowed video quality.

Abstract: A method to form a strain-inducing epitaxial film is described. In one embodiment, the strain-inducing epitaxial film is a three-component epitaxial film comprising atoms from a parent film, charge-neutral lattice-substitution atoms and charge-carrier dopant impurity atoms. In another embodiment, the strain-inducing epitaxial film is formed by a multiple deposition/etch cycle sequence involving hydrogenated amorphous silicon, followed by charge carrier dopant and charge-neutral lattice-forming impurity atom implant steps and, finally, a kinetically-driven crystallization process.

Abstract: Techniques are disclosed for customization of fin-based transistor devices to provide a diverse range of channel configurations and/or material systems within the same integrated circuit die. In accordance with one example embodiment, sacrificial fins are removed and replaced with custom semiconductor material of arbitrary composition and strain suitable for a given application. In one such case, each of a first set of the sacrificial fins is recessed or otherwise removed and replaced with a p-type material, and each of a second set of the sacrificial fins is recessed or otherwise removed and replaced with an n-type material. The p-type material can be completely independent of the process for the n-type material, and vice-versa. Numerous other circuit configurations and device variations are enabled using the techniques provided herein.

Abstract: Techniques are disclosed for incorporating high mobility strained channels into fin-based transistors (e.g., FinFETs such as double-gate, trigate, etc), wherein a stress material is cladded onto the channel area of the fin. In one example embodiment, silicon germanium (SiGe) is cladded onto silicon fins to provide a desired stress, although other fin and cladding materials can be used. The techniques are compatible with typical process flows, and the cladding deposition can occur at a plurality of locations within the process flow. In some cases, the built-in stress from the cladding layer may be enhanced with a source/drain stressor that compresses both the fin and cladding layers in the channel. In some cases, an optional capping layer can be provided to improve the gate dielectric/semiconductor interface. In one such embodiment, silicon is provided over a SiGe cladding layer to improve the gate dielectric/semiconductor interface.

Abstract: A method, non-transitory computer readable medium, and apparatus that establishes a connection with a host computing device. One or more processes running on the host computing device are identified. One or more hooking operations performed in the one or more identified processes are identified. One or more suspected key logging actions are identified from the one or more identified hooking operations based on one or more of a first set of rules and output.

Abstract: High sensitivity thermal detectors that perform beyond the blackbody radiation noise limit are described. Thermal detectors, as described herein, use spectrally selective materials that absorb strongly in the wavelength region of the desired signal but only weakly or not at all in the primary thermal emission band. Exemplary devices that can be made in accordance with the present invention include microbolometers containing semiconductors that absorb in the MWIR and/or THz range but not the LWIR.