Patents by Inventor Andreas Meiser

Andreas Meiser has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170047443
    Abstract: A semiconductor device is provided including a transistor cell in a semiconductor substrate having a first main surface. The transistor cell includes a gate electrode in a gate trench in the first main surface adjacent to a body region. A longitudinal axis of the gate trench extends in a first direction parallel to the first main surface. A source region, a body region and a drain region are disposed along the first direction. A source contact comprises a first source contact portion and a second source contact portion. The second source contact portion is disposed at a second main surface of the semiconductor substrate. The first source contact portion includes a source conductive material in direct contact with the source region and a portion of the semiconductor substrate arranged between the source conductive material and the second source contact portion.
    Type: Application
    Filed: August 11, 2016
    Publication date: February 16, 2017
    Applicant: Infineon Technologies Dresden GmbH
    Inventors: Andreas MEISER, Karl-Heinz GEBHARDT, Till SCHLOESSER, Detlef WEBER
  • Patent number: 9570576
    Abstract: A method for forming a semiconductor device includes forming an electrical structure at a main surface of a semiconductor substrate and carrying out an anodic oxidation of a back side surface region of a back side surface of the semiconductor substrate to form an oxide layer at the back side surface of the semiconductor substrate.
    Type: Grant
    Filed: December 10, 2013
    Date of Patent: February 14, 2017
    Assignee: Infineon Technologies AG
    Inventors: Andreas Meiser, Anton Mauder, Markus Zundel, Hans-Joachim Schulze, Franz Hirler, Hans Weber
  • Publication number: 20170033189
    Abstract: A method of manufacturing a structure in a semiconductor body comprises forming a first mask above a first surface of the semiconductor body. The first mask comprises an opening surrounding a first portion of the first mask, thereby separating the first portion and a second portion of the first mask. The semiconductor body is processed through the opening at the first surface. The opening is increased by removing at least part of the first mask in the first portion while maintaining the first mask in the second portion. The semiconductor body is further processed through the opening at the first surface.
    Type: Application
    Filed: July 27, 2016
    Publication date: February 2, 2017
    Inventors: Wolfgang Werner, Peter lrsigler, Andreas Meiser
  • Publication number: 20170033191
    Abstract: A semiconductor device is provided that includes a transistor in a semiconductor body having a main surface. The transistor includes a source region, a drain region, a body region, a drift zone, and a gate electrode at the body region. The body region and the drift zone are disposed along a first direction between the source region and the drain region. The first direction is parallel to the main surface. The semiconductor device further includes a field plate disposed in field plate trenches extending along the first direction in the drift zone, and a field dielectric layer between the field plate and the drift zone. A thickness of the field dielectric layer gradually increases along the first direction from a portion adjacent to the source region to a portion adjacent to the drain region.
    Type: Application
    Filed: July 22, 2016
    Publication date: February 2, 2017
    Applicant: Infineon Technologies AG
    Inventors: Andreas MEISER, Oliver HAEBERLEN
  • Patent number: 9558933
    Abstract: A method for forming a semiconductor device includes carrying out an anodic oxidation of a surface region of a semiconductor substrate to form an oxide layer at a surface of the semiconductor substrate by generating an attracting electrical field between the semiconductor substrate and an external electrode within an electrolyte to attract oxidizing ions of the electrolyte, causing an oxidation of the surface region of the semiconductor substrate. Further, the method includes reducing the number of remaining oxidizing ions within the oxide layer, while the semiconductor substrate is within an electrolyte.
    Type: Grant
    Filed: October 22, 2015
    Date of Patent: January 31, 2017
    Assignee: Infineon Technologies AG
    Inventors: Hans-Joachim Schulze, Markus Zundel, Anton Mauder, Andreas Meiser, Franz Hirler, Hans Weber
  • Publication number: 20170012002
    Abstract: A method of manufacturing a semiconductor device includes forming a separation trench into a first main surface of a semiconductor substrate and removing substrate material from a second main surface of the semiconductor substrate, so as to thin the substrate to a thickness of less than 100 ?m, the second main surface being opposite to the first main surface, so as to uncover a bottom side of the trench. Additional methods of manufacturing semiconductor devices are provided.
    Type: Application
    Filed: September 22, 2016
    Publication date: January 12, 2017
    Inventors: Andreas Meiser, Markus Zundel, Martin Poelzl, Paul Ganitzer, Georg Ehrentraut
  • Patent number: 9530884
    Abstract: A method of manufacturing a semiconductor device including a transistor comprises forming field plate trenches in a main surface of a semiconductor substrate, a drift zone being defined between adjacent field plate trenches, forming a field dielectric layer in the field plate trenches, thereafter, forming gate trenches in the main surface of the semiconductor substrate, a channel region being defined between adjacent gate trenches, and forming a conductive material in at least some of the field plate trenches and in at least some of the gate trenches. The method further comprising forming a source region and forming a drain region in the main surface of the semiconductor substrate.
    Type: Grant
    Filed: September 29, 2015
    Date of Patent: December 27, 2016
    Assignee: Infineon Technologies AG
    Inventors: Andreas Meiser, Till Schloesser
  • Publication number: 20160365443
    Abstract: A transistor cell includes a drift region, a source region, a body region, and a drain region that is laterally spaced apart from the source region. A gate electrode is adjacent the body region. A field electrode is arranged in the drift region. A source electrode is connected to the source region and the body region, and a drain electrode is connected to the drain region. An avalanche bypass structure is coupled between the source electrode and the drain electrode and includes a first semiconductor layer of the first doping type, a second semiconductor layer of the first doping type, and a pn-junction arranged between the first semiconductor layer and the source electrode. The second semiconductor layer has a higher doping concentration than the first semiconductor layer and is arranged between the second semiconductor layer and the drift region. The drain electrode is electrically connected to the second semiconductor layer.
    Type: Application
    Filed: June 14, 2016
    Publication date: December 15, 2016
    Inventors: Andreas Meiser, Till Schloesser
  • Patent number: 9502421
    Abstract: A semiconductor device is disclosed. In one embodiment, the semiconductor device includes two different semiconductor materials. The two semiconductor materials are arranged adjacent one another in a common plane.
    Type: Grant
    Filed: December 18, 2014
    Date of Patent: November 22, 2016
    Assignee: Infineon Technologies Austria AG
    Inventors: Franz Hirler, Andreas Meiser
  • Publication number: 20160322357
    Abstract: A semiconductor device includes first and second field effect transistors (FETs) formed in a semiconductor substrate having a first main surface. The first FET includes first source and drain contact grooves, each running in a first direction parallel to the first main surface, each formed in the first main surface. First source regions are electrically connected to a conductive material in the first source contact groove. First drain regions are electrically connected to a conductive material in the first drain contact groove. The second FET includes second source and drain contact grooves, each running in a second direction parallel to the first main surface, each formed in the first main surface. Second source regions are electrically connected to a conductive material in the second source contact groove, and second drain regions are electrically connected to a conductive material in the second drain contact groove.
    Type: Application
    Filed: April 26, 2016
    Publication date: November 3, 2016
    Inventors: Andreas Meiser, Till Schloesser
  • Publication number: 20160322464
    Abstract: A semiconductor device comprises a field effect transistor in a semiconductor substrate having a first main surface. The field effect transistor comprises a source region, a drain region, a body region, and a gate electrode at the body region. The gate electrode is configured to control a conductivity of a channel formed in the body region, and the gate electrode is disposed in gate trenches. The body region is disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The body region has a shape of a ridge extending along the first direction, the body region being adjacent to the source region and the drain region. The semiconductor device further comprises a source contact and a body contact, the source contact being electrically connected to a source terminal, the body contact being electrically connected to the source contact and to the body region.
    Type: Application
    Filed: April 27, 2016
    Publication date: November 3, 2016
    Inventors: Andreas Meiser, Till Schloesser
  • Publication number: 20160322347
    Abstract: A switch comprises a field effect transistor in a semiconductor substrate having a first main surface. The field effect transistor comprises a source region, a drain region, a body region, and a gate electrode at the body region, the gate electrode being configured to control a conductivity of a channel formed in the body region. The gate electrode is disposed in gate trenches. The body region is disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The body region has a shape of a ridge extending along the first direction. The body region is adjacent to the source region and the drain region. The switch further comprises a source contact and a body contact portion, the source contact being electrically connected to a source terminal. The body contact portion is in contact with the source contact and is electrically connected to the body region.
    Type: Application
    Filed: April 27, 2016
    Publication date: November 3, 2016
    Inventors: Andreas Meiser, Till Schloesser
  • Publication number: 20160307885
    Abstract: A semiconductor device includes a semiconductor body including a first trench extending into the semiconductor body from a first surface and a diode including an anode region and a cathode region. One of the anode region and the cathode region is at least partly arranged in the first trench. The other one of the anode region and the cathode region includes a first semiconductor region directly adjoining the one of the anode region and the cathode region from outside of the first trench, thereby constituting a pn junction. The semiconductor device further includes a conducting path through a sidewall of the first trench.
    Type: Application
    Filed: June 22, 2016
    Publication date: October 20, 2016
    Inventors: Joachim Weyers, Anton Mauder, Franz Hirler, Andreas Meiser, Ulrich Glaser
  • Publication number: 20160308044
    Abstract: A semiconductor device comprises a transistor in a semiconductor body having a first main surface. The transistor comprises a source region of a first conductivity type, a drain region, a body region of a second conductivity type, different from the first conductivity type, and a gate electrode disposed in gate trenches extending in a first direction parallel to the first main surface. The source region, the body region and the drain region are arranged along the first direction. The body region comprises first ridges extending along the first direction, the first ridges being disposed between adjacent gate trenches in the semiconductor body. The body region further comprises a second ridge. A width of the second ridge is larger than a width of the first ridges, the widths being measured in a second direction perpendicular to the first direction.
    Type: Application
    Filed: April 11, 2016
    Publication date: October 20, 2016
    Inventors: Andreas Meiser, Till Schloesser
  • Publication number: 20160307891
    Abstract: A semiconductor device comprises a transistor in a semiconductor body having a main surface. The transistor comprises a source region, a drain region, a body region, a drift zone, and a gate electrode at the body region. The body region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the main surface. The gate electrode is disposed in a trench extending in the first direction. The semiconductor device further comprises a source contact electrically connected to the source region and to a source terminal. The source contact is disposed in a source contact opening in the main surface. The semiconductor device further comprises a body contact portion electrically connected to the source terminal and to the body region. The body contact portion vertically overlaps with the source region.
    Type: Application
    Filed: April 12, 2016
    Publication date: October 20, 2016
    Inventors: Andreas Meiser, Till Schloesser
  • Publication number: 20160307996
    Abstract: A semiconductor device comprises a transistor in a semiconductor body having a first main surface and a second main surface, the first main surface being opposite to the second main surface. The transistor comprises a source region at the first main surface, a drain region, a body region, a drift zone, and a gate electrode at the body region. The body region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The gate electrode is disposed in trenches extending in the first direction. The transistor further comprises an insulating layer adjacent to the second main surface of the body region. The source region vertically extends to the second main surface.
    Type: Application
    Filed: March 25, 2016
    Publication date: October 20, 2016
    Inventors: Andreas Meiser, Till Schloesser
  • Publication number: 20160300944
    Abstract: A semiconductor device includes a transistor formed in a semiconductor substrate having a main surface. The transistor includes a source region of a first conductivity type, a drain region of the first conductivity type, a channel region of a second conductivity type, a gate trench adjacent to a first sidewall of the channel region, a gate conductive material disposed in the gate trench, the gate conductive material being connected to a gate terminal, and a channel separation trench adjacent to a second sidewall of the channel region. The second sidewall faces the first sidewall via the channel region. The channel separation trench is filled with an insulating separation trench filling consisting of an insulating material in direct contact with the channel region. The source region and the drain region are disposed along a first direction. The first direction is parallel to the main surface.
    Type: Application
    Filed: June 21, 2016
    Publication date: October 13, 2016
    Inventors: Andreas Meiser, Till Schloesser, Franz Hirler
  • Patent number: 9461004
    Abstract: A semiconductor workpiece includes a semiconductor substrate, at least two chip areas, components of semiconductor devices being formed in the semiconductor substrate in the at least two chip areas, and a separation trench disposed between adjacent chip areas. The separation trench is formed in a first main surface of the semiconductor substrate and extends from the first main surface to a second main surface of the semiconductor substrate. The second main surface is disposed opposite to the first main surface. The separation trench is filled with at least one sacrificial material.
    Type: Grant
    Filed: May 29, 2015
    Date of Patent: October 4, 2016
    Assignee: Infineon Technologies Austria AG
    Inventors: Andreas Meiser, Markus Zundel, Martin Poelzl, Paul Ganitzer, Georg Ehrentraut
  • Publication number: 20160284840
    Abstract: A controllable semiconductor component is produced by providing a semiconductor body with a top side and a bottom side, and forming a first trench protruding from the top side into the semiconductor body and a second trench protruding from the top side into the semiconductor body. In a common process, an oxide layer is formed in the first trench and in the second trench such that the oxide layer fills the first trench and electrically insulates a surface of the second trench. The oxide layer is removed from the first trench completely or at least partly such that the semiconductor body has an exposed first surface area arranged in the first trench. An electrically conductive material is filled into the second trench, and the semiconductor body and the oxide layer are partially removed such that the electrically conductive material has an exposed second surface area at the bottom side.
    Type: Application
    Filed: June 3, 2016
    Publication date: September 29, 2016
    Inventors: Andreas Meiser, Markus Zundel
  • Patent number: 9450085
    Abstract: A semiconductor device includes a semiconductor substrate having first regions of a first conductivity type and body regions of the first conductivity type, which are arranged in a manner adjoining the first region and overlap the latter in each case on a side of the first region which faces a first surface of the semiconductor substrate, and having a multiplicity of drift zone regions arranged between the first regions and composed of a semiconductor material of a second conductivity type, which is different than the first conductivity type. The first regions and the drift zone regions are arranged alternately and form a superjunction structure. The semiconductor device further includes a gate electrode formed in a trench in the semiconductor substrate.
    Type: Grant
    Filed: November 20, 2014
    Date of Patent: September 20, 2016
    Assignee: Infineon Technologies AG
    Inventors: Till Schloesser, Andreas Meiser