Abstract: A lifting table stand includes a pair of telescopic columns, a carrier, an actuation module, and a passive mechanism. Each telescopic column includes multiple tubes adapted to sheathe with each other and move telescopically relative to each other. The carrier includes a beam straddling the telescopic columns and a pair of support members perpendicularly connected to two ends of the beam. The actuation module includes a receiving member detachably installed to the beam and a driver connected to the receiving member. The passive mechanism includes a transmission shaft and a pair of gear sets installed in the tubes. The transmission shaft passes the driver and is connected to each gear set. Since the receiving member is detachably installed to beam, the actuation module may be changed to different types to control the elevation of the lifting table stand.

Abstract: The present disclosure provides a photo sensing device, the photo sensing device includes a substrate, including a silicon layer at a front surface, a photosensitive member extending into and at least partially surrounded by the silicon layer, a first doped region having a first conductivity type at a first side of the photosensitive member, wherein the first doped region is in the silicon layer, and a second doped region having a second conductivity type different from the first conductivity type at a second side of the photosensitive member opposite to the first side, wherein the second doped region is in the silicon layer, and the first doped region is apart from the second doped region, and a superlattice layer disposed between the photosensitive member and the silicon layer, wherein the superlattice layer includes a first material and a second material different from the first material.

Abstract: A latch circuit includes first and second supply nodes having a first voltage value and a second voltage below the first voltage value, first and second input nodes, first and second output nodes, a first switch coupled between the first and second output nodes and turned on and off responsive to first and second clock signal states, first and second transistors coupled between the respective second and first output nodes and the second supply node. A second switch is coupled between a first transistor gate and the first input node, a third switch is coupled between a second transistor gate and the second input node, and each is turned on and off responsive to the first and second states. During the first state, one of the first or second transistors is part of a low resistance path from the first power supply node to the second power supply node.

Abstract: A portable electronic device is provided. The portable electronic device includes a body, an image sensor and a main system. The image sensor continually captures a first image outside the body, detects at least one motion of a user according to the first image, and generates a control signal related to the motion. The main system receives the control signal from the image sensor and executes a function or a service corresponding to the motion according to the control signal.

Abstract: An image capturing assembly including a mounting base, a driving component, a first gear, a second gear, a lens assembly, a third gear and a resistance component. The driving component is disposed on the mounting base. The first gear is connected to the driving component and configured to be driven by the driving component. The second gear is pivotally connected to the mounting base and connected to the first gear. The driving component is configured to drive the second gear via the first gear. The lens assembly is fixed to the second gear. The third gear is pivotally connected to the mounting base and engaged with the second gear. The resistance component presses against the third gear to allow the third gear to transmit a resistance against the second gear during a rotation of the second gear.

Abstract: A biplane flying device includes a fuselage, an upper wing, a lower wing, a first propulsion assembly and a second propulsion assembly. The upper wing is connected to one side of the fuselage. The upper wing has a first end and a second end opposite to each other. The lower wing is connected to the fuselage and opposite to the upper wing. The lower wing has a third end and a fourth end opposite to each other. The first end is opposite to the third end, and the second end is opposite to the fourth end. The first propulsion assembly is connected between the first end, the third end and the fuselage. The second propulsion assembly is connected between the second end, the fourth end and the fuselage.

Abstract: A chip transferring method includes providing a plurality of chips on a first load-bearing structure; measuring photoelectric characteristic values of the plurality of chips; categorizing the plurality of chips into a first portion chips and a second portion chips according to the photoelectric characteristic values of the plurality of chips, wherein the second portion chips comprise parts of the plurality of chips which photoelectric characteristic value falls within an unqualified range; removing the second portion chips from the first load-bearing structure; dividing the first portion chips into a plurality of blocks according to the photoelectric characteristic values, and each of the plurality of blocks comprising multiple chips of the first portion chips; and transferring the multiple chips of one of the plurality of blocks to a second load-bearing structure.

Abstract: A semiconductor device package includes a display device, an encapsulation layer disposed in direct contact with the display device, and a reinforced structure surrounded by the encapsulation layer. The reinforced structure is spaced apart from a surface of the display device. A method of manufacturing a semiconductor device package is also disclosed.

Abstract: A lightweight beam structure includes a first and a second frame. The first frame includes an upper plate, two inner side plates downward bent and extended from two sides of the upper plate, two outer side plates upward bent and extended from two inner side plates respectively and two fixing plates bent and extended from two outer side plates respectively. Each outer side plate is formed outside each inner side plate. A groove is formed between each inner side plate and each outer side plate. The second frame is connected with the first frame and includes a top plate and two intermediate plates downward bent and extended from two sides of the top plate. Each intermediate plate is received in each groove. The top plate is formed over the upper plate. Therefore, the stability is maintained and the weight is reduced so that the material costs may be decreased.

Abstract: An optical detection device is applied to an organism and includes a light emitting module, an optical detection module and an operation processor. The light emitting module includes a plurality of light emitters arranged along a first direction. The optical detection module includes a plurality of optical sensors arranged along a second direction and symmetrically relative to the light emitting module. The second direction is substantially different from the first direction. The optical sensors are substantially placed more outward from a center of the optical detection device than the light emitters. The operation processor is electrically connected to the optical detection module. The operation processor is adapted to analyze signal variation in the plurality of light emitters acquired by each of the plurality of optical sensors for determining a physiological feature of the organism.

Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.

Abstract: The disclosure is a beam structure for a leg stand of an electric table, which includes a first frame and a second frame. The first frame includes an inner bottom plate, an inner side plate and an inner embedding plate. The inner embedding plate is formed on outside of the inner side plate. The inner embedding plate includes an exposed section. The second frame is movably connected with the first frame. The second frame includes an outer bottom plate, an outer side plate and an outer connecting plate. The inner bottom plate is formed above the outer bottom plate. The inner side plate is formed on inside of the outer side plate. The inner embedding plate is correspondingly embedded in the outer connecting plate. The exposed section is exposed from the outer connecting plate.

Abstract: Present invention is related to a microwave and electromagnetic heated foaming method, mold and foaming material thereof. The microwave and electromagnetic heated foaming method comprises steps of adding a foam material into a mold, simultaneously applying a microwave and electromagnetic energy toward the mold under a normal or low pressure, and the microwave and electromagnetic energy made the foam material into molded foam body. The mold of the present invention has a microwave penetrating part and an electromagnetic heating part. The microwave penetrating part has an extruded bottom that is corresponded to a dented top of the electromagnetic heat penetrating part. By utilizing the microwave and electromagnetic energy, the present invention is about to provide an efficient way for processing the foaming material compared to the conventional infrared or electrical heated tube heating and achieve the foam method that can be executed under normal or low pressure.

Abstract: A circuit board structure includes a substrate, a first build-up structure layer, first and second external circuit layers, at least one first conductive via, and second conductive vias. The first build-up structure layer is disposed on a first circuit layer of the substrate. The first external circuit layer is disposed on the first build-up structure layer. The second external circuit layer is disposed on a second circuit layer and a portion of a third dielectric layer of the substrate. The first conductive via is electrically connected to the first external circuit layer and the second external circuit layer to define a signal path. The second conductive vias surround the first conductive via, and the first external circuit layer, the second conductive vias, the first circuit layer, the outer conductive layer, and the second external circuit layer define a first ground path. The first ground path surrounds the signal path.

Abstract: A circuit board, including a first dielectric material, a second dielectric material, a third dielectric material, a fourth dielectric material, a first external circuit layer, a second external circuit layer, a conductive structure, a first conductive via, and multiple second conductive vias, is provided. The first conductive via at least passes through the first dielectric material and the fourth dielectric material, and is electrically connected to the first external circuit layer and the second external circuit layer to define a signal path. The second conductive vias pass through the first dielectric material, the second dielectric material, the third dielectric material, and a part of the conductive structure, and surround the first conductive via. The second conductive vias are electrically connected to the first external circuit layer, the conductive structure, and the second external circuit layer to define a ground path, and the ground path surrounds the signal path.

Abstract: Self-aligned gate cutting techniques are disclosed herein that provide dielectric gate isolation fins for isolating gates of multigate devices from one another. An exemplary device includes a first multigate device having first source/drain features and a first metal gate that surrounds a first channel layer and a second multigate device having second source/drain features and a second metal gate that surrounds a second channel layer. A dielectric gate isolation fin separates the first metal gate from the second metal gate. The dielectric gate isolation fin includes a first dielectric layer having a first dielectric constant and a second dielectric layer having a second dielectric constant disposed over the first dielectric layer. The second dielectric constant is greater than the first dielectric constant. The first metal gate and the second metal gate physically contact the first channel layer and the second channel layer, respectively, and the dielectric gate isolation fin.

Abstract: A method includes depositing a multi-layer stack on a semiconductor substrate, the multi-layer stack including a plurality of sacrificial layers that alternate with a plurality of channel layers; forming a dummy gate on the multi-layer stack; forming a first spacer on a sidewall of the dummy gate; performing a first implantation process to form a first doped region, the first implantation process having a first implant energy and a first implant dose; performing a second implantation process to form a second doped region, where the first doped region and the second doped region are in a portion of the channel layers uncovered by the first spacer and the dummy gate, the second implantation process having a second implant energy and a second implant dose, where the second implant energy is greater than the first implant energy, and where the first implant dose is different from the second implant dose.

Abstract: A method for manufacturing a memory device includes forming a first metal layer over a substrate, forming a magnetic tunnel junction (MTJ) layer stack over the first metal layer, forming a second metal layer over the MTJ layer stack, forming a hard mask layer over the second metal layer, performing a first etching process on the MTJ layer stack to form an MTJ structure and a redeposited layer on a sidewall of the MTJ structure, performing a second etching process to remove the redeposited layer, and performing a third etching process on the sidewall of the MTJ structure.

Abstract: An electronic device can include a first pad, a first detection pad, a second pad and an electronic component. The first detection pad and the first pad can be separated from one another. The electronic component can include a first electrode and a second electrode. The first electrode can be coupled to the first pad and the first detection pad, and the second electrode can be coupled to the second pad.

Abstract: A FinFET is provided including a channel region containing a constituent element and excess atoms, the constituent element belonging to a group of the periodic table of elements, wherein said excess atoms are nitrogen, or belong to said group of the periodic table of elements, and a concentration of said excess atoms in the channel region is in the range between about 1019 cm?3 and about 1020 cm?3.