Patents by Inventor Chang-Lin (Peter) Hsieh

Chang-Lin (Peter) Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • PIXEL STRUCTURE
    Publication number: 20230216001
    Abstract: A pixel structure is provided. The pixel structure includes a substrate and a conductive line electrically connected to the substrate. The ratio of the height to the width of the conductive line is between 0.5 and 6. The pixel structure also includes an electrode electrically connected to the conductive line and a conversion element electrically connected to the conductive lines through the electrode.
    Type: Application
    Filed: December 30, 2021
    Publication date: July 6, 2023
    Inventors: Yu-Chang LIN, Tai-Jui WANG, Chieh Wei FENG, Wei-Chung CHEN
  • ELECTRONIC PACKAGE AND METHOD OF FORMING THE SAME
    Publication number: 20230215775
    Abstract: An electronic package is provided in the present disclosure. The electronic package comprises: an electronic component; a thermal conductive element above the electronic component, wherein thermal conductive element includes a first metal; an adhesive layer between the electronic component and the thermal conductive element, wherein the first adhesive layer includes a second metal; and an intermetallic compound (IMC) between the first metal and the second metal.
    Type: Application
    Filed: January 5, 2022
    Publication date: July 6, 2023
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventor: Chang-Lin YEH
  • Processing path generating method and device
    Patent number: 11694337
    Abstract: A processing path generating method includes the following steps. An image-capturing device is moved to the first position of the region of interest to perform an image-capture on a workpiece, so as to obtain a first image. The image-capturing device is moved to a second position to perform the image-capture on the workpiece, so as to obtain a second image. A first edge characteristic and a second edge characteristic of the workpiece are obtained according to the first image and the second image. Three-dimensional edge information of the workpiece is fitted according to the first edge characteristic and the second edge characteristic. A processing path is generated according to the three-dimensional edge information.
    Type: Grant
    Filed: March 31, 2022
    Date of Patent: July 4, 2023
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Meng-Chiou Liao, Chang-Lin Wang, Chin-Ming Chen, Chien-Yi Lee, Po-Hsun Wu
  • OPTICAL SYSTEM
    Publication number: 20230204903
    Abstract: An optical system is provided, including a first movable part for connecting an optical element; a first base, wherein the first movable part is movable relative to the first base; and a first driving assembly for driving the movable part to move relative to the first base. The optical system further includes a light quantity control mechanism for controlling the quantity of light entering the optical element. The light quantity control mechanism further includes a base seat and a light quantity control assembly at least partially movable relative to the base seat. The optical system further includes a second driving assembly for controlling the light quantity control assembly.
    Type: Application
    Filed: March 3, 2023
    Publication date: June 29, 2023
    Inventors: Yi-Ho CHEN, Chen-Hsin HUANG, Chao-Chang HU, Chen-Chi KUO, Ying-Jen WANG, Ya-Hsiu WU, Sin-Jhong SONG, Che-Hsiang CHIU, Kuen-Wang TSAI, Mao-Kuo HSU, Tun-Ping HSUEH, I-Hung CHEN, Chun-Chia LIAO, Wei-Zhong LUO, Wen-Chang LIN
  • ELECTRONIC SYSTEM WITH EYE PROTECTION IN RESPONSE TO USER DISTANCE
    Publication number: 20230209174
    Abstract: An electronic system including a display device, an image sensor, a face detection engine, an eye detection engine and an eye protection engine is provided. The image sensor captures an image. The face detection engine recognizes a user face in the image. The eye detection engine recognizes user eyes in the image. The eye protection engine turns off the display device when the user eyes are recognized in the image but the user face is not recognized in the image.
    Type: Application
    Filed: February 20, 2023
    Publication date: June 29, 2023
    Inventors: HAN-CHANG LIN, GUO-ZHEN WANG, NIEN-TSE CHEN
  • OPTICAL ELEMENT DRIVING MECHANISM
    Publication number: 20230204901
    Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a circuit assembly. The movable assembly is configured to connect an optical element, the movable assembly is movable relative to the fixed assembly, and the optical element has an optical axis. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The circuit assembly includes a plurality of circuits and is affixed to the fixed assembly.
    Type: Application
    Filed: February 23, 2023
    Publication date: June 29, 2023
    Inventors: Sin-Hong LIN, Yung-Ping YANG, Wen-Yen HUANG, Yu-Cheng LIN, Kun-Shih LIN, Chao-Chang HU, Yung-Hsien YEH, Mao-Kuo HSU, Chih-Wei WENG, Ching-Chieh HUANG, Chih-Shiang WU, Chun-Chia LIAO, Chia-Yu CHANG, Hung-Ping CHEN, Wei-Zhong LUO, Wen-Chang LIN, Shou-Jen LIU, Shao-Chung CHANG, Chen-Hsin HUANG, Meng-Ting LIN, Yen-Cheng CHEN, I-Mei HUANG, Yun-Fei WANG, Wei-Jhe SHEN
  • SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
    Publication number: 20230197856
    Abstract: A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a plurality of first nanostructures stacked over a substrate in a vertical direction. The semiconductor device structure also includes a first bottom layer formed adjacent to the first nanostructures, and a first dielectric layer formed over the first bottom layer. The semiconductor device structure further includes a first source/drain (S/D) structure formed over the first dielectric layer, and the first S/D structure is isolated from the first bottom layer by the first dielectric layer.
    Type: Application
    Filed: March 3, 2022
    Publication date: June 22, 2023
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Cheng CHEN, Zhi-Chang LIN, Jung-Hung CHANG, Chien-Ning YAO, Tsung-Han CHUANG, Kuo-Cheng CHIANG, Chih-Hao WANG
  • Optical element driving mechanism
    Patent number: 11681118
    Abstract: An optical element driving mechanism having an optical axis includes a fixed portion, a movable portion, and a driving assembly. The movable portion is connected to the fixed portion. The driving assembly drives the movable portion to move in a direction that is parallel to the optical axis relative to the fixed portion, when viewed in the direction that is parallel to the optical axis, the optical element driving mechanism is a rectangular structure with a first side, a second side, a third side, and a fourth side, the first side and the third side are opposite, and the first side is adjacent to the second side and the fourth side.
    Type: Grant
    Filed: December 4, 2020
    Date of Patent: June 20, 2023
    Assignee: TDK TAIWAN CORP.
    Inventors: Wei-Jhe Shen, Kun-Shih Lin, Yung-Ping Yang, Chun-Chieh Chang, Sheng-Chang Lin, Che-Hsiang Chiu
  • LIFTING TABLE STAND
    Publication number: 20230180928
    Abstract: A lifting table stand includes a pair of telescopic columns, a carrier, an actuation module, and a passive mechanism. Each telescopic column includes multiple tubes adapted to sheathe with each other and move telescopically relative to each other. The carrier includes a beam straddling the telescopic columns and a pair of support members perpendicularly connected to two ends of the beam. The actuation module includes a receiving member detachably installed to the beam and a driver connected to the receiving member. The passive mechanism includes a transmission shaft and a pair of gear sets installed in the tubes. The transmission shaft passes the driver and is connected to each gear set. Since the receiving member is detachably installed to beam, the actuation module may be changed to different types to control the elevation of the lifting table stand.
    Type: Application
    Filed: February 2, 2023
    Publication date: June 15, 2023
    Inventor: Yu-Chang LIN
  • ENHANCED CHANNEL STRAIN TO REDUCE CONTACT RESISTANCE IN NMOS FET DEVICES
    Publication number: 20230187447
    Abstract: A semiconductor device includes a substrate, a fin structure and an isolation layer formed on the substrate and adjacent to the fin structure. The semiconductor device includes a gate structure formed on at least a portion of the fin structure and the isolation layer. The semiconductor device includes an epitaxial layer including a strained material that provides stress to a channel region of the fin structure. The epitaxial layer has a first region and a second region, in which the first region has a first doping concentration of a first doping agent and the second region has a second doping concentration of a second doping agent. The first doping concentration is greater than the second doping concentration. The epitaxial layer is doped by ion implantation using phosphorous dimer.
    Type: Application
    Filed: February 6, 2023
    Publication date: June 15, 2023
    Inventors: Yu-Chang LIN, Chun-Feng NIEH, Huicheng CHANG, Hou-Yu CHEN, Yong-Yan LU
  • Method for metal gate cut and structure thereof
    Patent number: 11676819
    Abstract: A semiconductor device includes a first fin, a second fin, a first gate electrode having a first portion that at least partially wraps around an upper portion of the first fin and a second portion that at least partially wraps around an upper portion of the second fin, a second gate electrode having a portion that at least partially wraps around the upper portion of the first fin, and a gate-cut feature having a first portion in the first gate electrode between the first and second portions of the first gate electrode. The gate-cut feature is at least partially filled with one or more dielectric materials. In a direction of a longitudinal axis of the first fin, the gate-cut feature has a second portion extending to a sidewall of the second gate electrode.
    Type: Grant
    Filed: June 29, 2022
    Date of Patent: June 13, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Pei-Yu Wang, Zhi-Chang Lin, Ching-Wei Tsai, Kuan-Lun Cheng
  • Latch circuits and method of operating a latch circuit
    Patent number: 11677388
    Abstract: A latch circuit includes a power supply node, first and second input nodes, and first and second output nodes. A first switching device is coupled between the first and second output nodes and is turned on and off in response to respective first and second states of a clock signal. A first transistor has a source coupled with a common node, a drain coupled with the second output node, and a gate directly coupled with the first input node, and a second transistor has a source coupled with the common node, a drain coupled with the first output node, and a gate directly coupled with the second input node. A second switching device is coupled between the common node and the power supply node and is turned on and off in response to the respective second and first states of the clock signal.
    Type: Grant
    Filed: April 24, 2018
    Date of Patent: June 13, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tsung-Ching (Jim) Huang, Chan-Hong Chern, Ming-Chieh Huang, Chih-Chang Lin, Tien-Chun Yang
  • Semiconductor Device Structure and Method for Forming the Same
    Publication number: 20230178600
    Abstract: A method for forming a semiconductor device structure is provided. The semiconductor device structure includes a plurality of first nanostructures stacked over a substrate in a vertical direction. The semiconductor device structure includes a first bottom layer formed adjacent to the first nanostructures, and a first insulating layer formed over the first bottom layer. The semiconductor device structure includes a first source/drain (S/D) structure formed over the first insulating layer, and the first insulating layer is in direct contact with one of the first nanostructures.
    Type: Application
    Filed: May 16, 2022
    Publication date: June 8, 2023
    Inventors: Tsung-Han Chuang, Zhi-Chang Lin, Shih-Cheng Chen, Jung-Hung Chang, Chien Ning Yao, Kai-Lin Chuang, Kuo-Cheng Chiang, Chih-Hao Wang
  • INDUSTRIAL HEAVY LOAD ELECTRIC LINEAR ACTUATOR
    Publication number: 20230179073
    Abstract: An industrial heavy load electric linear actuator includes a gearbox (10), an electric motor (20), a lead screw (30), an extension pipe (40) and a load baring structure (50). The electric motor (20) is connected to the gearbox (10). A portion of the lead screw (30) is received inside the gearbox (10) and driven by the electric motor (20), and another portion of the lead screw (30) is extended out of the gearbox (10). The extension pipe (40) is movably fastened to the lead screw (30). The load bearing structure (50) includes a sleeve (51), a bearing (52), a fastening element (53), a fixation seat (54) and a rear supporting seat (55). The sleeve (51) is mounted to the lead screw (30) and holds the bearing (52) jointly with the fastening element (53). The fixation seat (54) and the rear supporting seat (55) hold the bearing (52) at outer perimeters of the sleeve (51) and the fastening element (53).
    Type: Application
    Filed: January 18, 2022
    Publication date: June 8, 2023
    Inventor: Yu-Chang LIN
  • Semiconductor device with implant and method of manufacturing same
    Patent number: 11670683
    Abstract: A FinFET is provided including a channel region containing a constituent element and excess atoms, the constituent element belonging to a group of the periodic table of elements, wherein said excess atoms are nitrogen, or belong to said group of the periodic table of elements, and a concentration of said excess atoms in the channel region is in the range between about 1019 cm?3 and about 1020 cm?3.
    Type: Grant
    Filed: August 4, 2021
    Date of Patent: June 6, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Chang Lin, Tien-Shun Chang, Chun-Feng Nieh, Huicheng Chang
  • Multicast packet replication method
    Patent number: 11658837
    Abstract: A replication list table structure for multicast packet replication is provided. The replication list table structure includes a plurality of entries. Each one of the plurality of entries includes a first field, a second field, a third field and a fourth field. For each one of the plurality of entries, the first field is used to declare whether the entry is an end of a program execution, the second field is used to declare the fourth field as a first type field for indicating a switch how to modify a header of a multicast packet, or as a second type field for indicating the switch, while reading the list, to jump to another one of the plurality entries, and the third field is preset to the first type field for indicating the switch how to modify the header of the multicast packet.
    Type: Grant
    Filed: July 10, 2020
    Date of Patent: May 23, 2023
    Assignee: REALTEK SEMICONDUCTOR CORP.
    Inventors: Kuo-Cheng Lu, Mao-Lin Huang, Yung-Chang Lin
  • Chip transferring method and the apparatus thereof
    Patent number: 11658052
    Abstract: A chip transferring method includes providing a plurality of chips on a first load-bearing structure; measuring a photoelectric characteristic value of each of the plurality of chips; categorizing the plurality of chips into a first portion chips and a second portion chips according to the photoelectric characteristic value of each of the plurality of chips; providing a second load-bearing structure; weakening a first adhesion between the first portion chips and the first load-bearing structure or between the second portion chips and the first load-bearing structure; and transferring the first portion chips or the second portion chips to the second load-bearing structure.
    Type: Grant
    Filed: July 2, 2021
    Date of Patent: May 23, 2023
    Assignee: EPISTAR CORPORATION
    Inventors: Min-Hsun Hsieh, De-Shan Kuo, Chang-Lin Lee, Jhih-Yong Yang
  • Backlight driving method and device for driving a scan-type display
    Patent number: 11651745
    Abstract: A backlight driving method includes steps of: (A) receiving a piece of image data; (B) generating a piece of adjustment data based on the image data; (C) generating, based on a plurality of predetermined delay values and on an original synchronization control (SC) signal that has a pulse, an internal SC signal that has a plurality of pulses, where respective time delays of the pulses of the internal SC signal with respect to the pulse of the original SC signal are respectively dependent on the predetermined delay values; and (D) generating a backlight driving output based on the adjustment data and the internal SC signal, so as to drive a backlight source of a scan-type display to emit light intermittently.
    Type: Grant
    Filed: May 10, 2022
    Date of Patent: May 16, 2023
    Assignee: MACROBLOCK, INC.
    Inventors: Chang-Lin Chen, Chun-Yi Li, Wei-Chung Chen
  • SEMICONDUCTOR STRUCTURE WITH ISOLATION FEATURE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20230144099
    Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a substrate and a bottom isolation feature formed over the substrate. The semiconductor structure also includes a bottom semiconductor layer formed over the bottom isolation feature and nanostructures formed over the bottom semiconductor layer. The semiconductor structure also includes a source/drain structure attached to the nanostructures and covering a portion of the bottom isolation feature.
    Type: Application
    Filed: February 16, 2022
    Publication date: May 11, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Cheng CHEN, Zhi-Chang LIN, Jung-Hung CHANG, Chien-Ning YAO, Tsung-Han CHUANG, Kuo-Cheng CHIANG
  • Hybrid Fin Structure of Semiconductor Device and Method of Forming Same
    Publication number: 20230135509
    Abstract: A semiconductor device and a method of forming the same are provided. A device includes a substrate, a first isolation structure over the substrate, a first fin and a second fin over the substrate and extending through the first isolation structure, and a hybrid fin extending into the first isolation structure and interposed between the first fin and the second fin. A top surface of the first fin and a top surface of the second fin are above a top surface of the first isolation structure. A top surface of the hybrid fin is above the top surface of the first isolation structure. The hybrid fin includes an upper region, and a lower region under the upper region. The lower region includes a seam. A topmost portion of the seam is below the top surface of the first fin and the top surface of the second fin.
    Type: Application
    Filed: January 21, 2022
    Publication date: May 4, 2023
    Inventors: Yen-Chun Huang, Shu Ling Liao, Fang-Yi Liao, Yu-Chang Lin