Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first stacked nanostructure and a second stacked nanostructure formed over a substrate, and a dummy fin structure between the first stacked nanostructure and the second stacked nanostructure. The semiconductor device structure includes a gate structure formed over the first stacked nanostructure and the second stacked nanostructure, and a conductive layer formed over the gate structure. The semiconductor device structure includes a capping layer formed over the dummy fin structure, and each of the gate structure and the conductive layer is divided into two portions by the capping layer.

Abstract: A linear actuator (1) and the centrifugal safety device (50) thereof is disclosed. The safety device (50) includes an outer socket (51) having a stop portion (512) and a first accommodation portion (513), an inner socket (53) having a raised portion (531) and a second accommodation portion (532) and a centrifugal assembly (55) having a centrifugal block (551) and an elastic element (555). The inner socket (53) drives the centrifugal assembly (55) to rotate. If the centrifugal force of the centrifugal block (551) is smaller than the elasticity of the elastic element (555), then the centrifugal block (551) is limited in the second accommodation portion (532) by the elastic element (555), or else the centrifugal block (551) moves into the first accommodation portion (513) and clamped by the raised portion (531) and the stop portion (512).

Abstract: A method of forming a semiconductor transistor device. The method comprises forming a fin-shaped channel structure over a substrate and forming a first source/drain epitaxial structure and a second source/drain epitaxial structure on opposite endings of the fin structure. The method further comprises forming a metal gate structure surrounding the fin structure. The method further comprises flipping and partially removing the substrate to form a back-side capping trench while leaving a lower portion of the substrate along upper sidewalls of the first source/drain epitaxial structure and the second source/drain epitaxial structure as a protective spacer. The method further comprises forming a back-side dielectric cap in the back-side capping trench.

Abstract: A wearable device is provided. The wearable device includes an electronic component and an encapsulant. The encapsulant includes a low-penetrability region encapsulating the electronic component and a high-penetrability region physically separated from the electronic component.

Abstract: A method includes depositing a multi-layer stack over a semiconductor substrate, the multi-layer stack including a plurality of sacrificial layers that alternate with a plurality of channel layers; forming a first recess in the multi-layer stack; forming first spacers on sidewalls of the sacrificial layers in the first recess; depositing a first semiconductor material in the first recess, where the first semiconductor material is undoped, where the first semiconductor material is in physical contact with a sidewall and a bottom surface of at least one of the first spacers; implanting dopants in the first semiconductor material, where after implanting dopants the first semiconductor material has a gradient-doped profile; and forming an epitaxial source/drain region in the first recess over the first semiconductor material, where a material of the epitaxial source/drain region is different from the first semiconductor material.

Abstract: A semiconductor package includes a circuit board structure, a redistribution layer structure, a package structure, and a ring structure. The redistribution layer structure has a first region and a second region surrounding the first region. The redistribution layer structure is disposed over and electrically connected to the circuit board structure. A metal density in the second region is greater than a metal density in the first region. The package structure is disposed over the first region of the redistribution layer structure. The package structure is electrically connected to the redistribution layer structure. The ring structure is disposed over the second region of the redistribution layer structure.

Abstract: A semiconductor device includes a substrate, a fin structure and an isolation layer formed on the substrate and adjacent to the fin structure. The semiconductor device includes a gate structure formed on at least a portion of the fin structure and the isolation layer. The semiconductor device includes an epitaxial layer including a strained material that provides stress to a channel region of the fin structure. The epitaxial layer has a first region and a second region, in which the first region has a first doping concentration of a first doping agent and the second region has a second doping concentration of a second doping agent. The first doping concentration is greater than the second doping concentration. The epitaxial layer is doped by ion implantation using phosphorous dimer.

Abstract: A semiconductor package device and a method of manufacturing a semiconductor package device are provided. The semiconductor package device includes a substrate, a first electronic component, and an encapsulation layer. The substrate has a first surface, a second surface opposite to the first surface, and a first opening extending from the first surface to the second surface. The first electronic component is disposed on the first surface of the substrate. The encapsulation layer is formed on the second surface of the substrate. The encapsulation layer includes a chamber connected to the first opening, and a width of the first opening is smaller than a width of the chamber.

Abstract: A harmonic speed reducer is provided. The harmonic speed reducer includes a wave generator, a flexible gear, a first rigid gear, and a second rigid gear. The wave generator can be driven to rotate relative to a central axis. The flexible gear has a plurality of first outer gear structures, a division groove, and a plurality of second outer gear structures. The first rigid gear has a plurality of first inner gear structures configured to be engaged with the first outer gear structures. The second rigid gear has a plurality of second inner gear structures configured to be engaged with the second outer gear structures. A first intersection line is defined between each of the first inner gear structures and a sectional surface. An angle between the first intersection line and a first horizontal line is within a range from 0.1 degrees to 5 degrees.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first gate stack wrapping around first nanostructures, a second gate stack wrapping around second nanostructures, a gate isolation structure interposing between the first gate stack and the second gate stack, a first source/drain feature adjoining the first nanostructures, a second source/drain feature adjoining the second nanostructures, and a source/drain spacer structure interposing between the first source/drain feature and the second source/drain feature. The gate isolation structure covers a sidewall of the source/drain spacer structure.

Abstract: A lifting table stand includes a pair of telescopic columns, a carrier, an actuation module and a passive mechanism. Each telescopic column includes multiple tubes adapted to sheathe with each other and move telescopically relative to each other. The carrier includes a beam straddling the telescopic columns and a pair of support members perpendicularly connected to two ends of the beam. The actuation module includes a receiving member detachably installed to the beam and a driver connected to the receiving member. The passive mechanism includes a transmission shaft and a pair of gear sets installed in the tubes. The transmission shaft passes the driver and is connected to each gear set. Since the receiving member is detachably installed to beam, the actuation module may be changed to different types to control the elevation of the lifting table stand.

Abstract: A semiconductor package device includes a substrate, an electronic component, and a thermal conductive layer. The electronic component is disposed on the substrate and includes a first surface facing away from the substrate. The thermal conductive layer is disposed above the first surface of the electronic component. The thermal conductive layer includes a plurality of portions spaced apart from each other.

Abstract: An integrated circuit includes a first nanostructure transistor including a plurality of first semiconductor nanostructures over a substrate and a source/drain region in contact with each of the first semiconductor nanostructures. The integrated circuit includes a second nanostructure transistor including a plurality of second semiconductor nanostructures and a second source/drain region in contact with one or more of the second semiconductor nanostructures but not in contact with one or more other second semiconductor nanostructures.

Abstract: An apparatus for collecting information communicating with a server and a collecting device includes scanning a bar code and transmit identification information of the apparatus to the server; the bar code is configured to link to a webpage of the server; acquiring biological characteristic information of a user of the apparatus collected by the collecting device; acquiring the identification information and the biological characteristic information matched by the server; and displaying the identification information and the biological characteristic information synchronized with the server. A method and a server for collecting information are also disclosed.

Abstract: A virtual image display system, including a handheld electronic device having a first battery and a virtual image display having a second battery, is provided. The handheld electronic device and the virtual image display are coupled to each other. The handheld electronic device is used to calculate a power supply time of the first battery; calculate an expected discharge time of the second battery under a discharge condition; compare the power supply time and the expected discharge time to generate a comparison result; and adjust a supply current provided by the first battery to the virtual image display according to the comparison result.

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a fin structure over a substrate. The fin structure includes a protection layer and alternating first and second semiconductor layers over the protection layer. The method also includes etching the fin structure to form a source/drain recess, forming a sacrificial contact in the source/drain recess, forming a source/drain feature over the sacrificial contact in the source/drain recess, removing the first semiconductor layers of the fin structure, thereby forming a plurality of nanostructures, forming a gate stack wrapping around the nanostructures, removing the substrate thereby exposing the protection layer and the sacrificial contact and replacing the sacrificial contact with a contact plug.

Abstract: Disclosed is a time-division multiplexing (TDM) scheduler capable of determining a service order for serving N packet transmission requesters. The TDM scheduler includes: N current count value generators configured to serve the N packet transmission requesters respectively, and generate N current count values according to parameters of the N packet transmission requesters, a previous scheduling result generated by the EDD scheduler previously, and a predetermined counting rule; and an earliest due date (EDD) scheduler configured to generate a current scheduling result for determining the service order according to the N current count values and a predetermined urgency decision rule, wherein an extremum of the N current count values relates to one of the N packet transmission requesters, and the EDD scheduler selects this requester as the one to be served preferentially.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: A mask layer is formed over a semiconductor device. The semiconductor device includes: a gate structure, a first layer disposed over the gate structure, and an interlayer dielectric (ILD) disposed on sidewalls of the first layer. The mask layer includes an opening that exposes a portion of the first layer and a portion of the ILD. A first etching process is performed to etch the opening partially into the first layer and partially into the ILD. A liner layer is formed in the opening after the first etching process has been performed. A second etching process is performed after the liner layer has been formed. The second etching process extends the opening downwardly through the first layer and through the gate structure. The opening is filled with a second layer after the second etching process has been performed.

Abstract: A method for forming a gate all around transistor includes forming a plurality of semiconductor nanosheets. The method includes forming a cladding inner spacer between a source region of the transistor and a gate region of the transistor. The method includes forming sheet inner spacers between the semiconductor nanosheets in a separate deposition process from the cladding inner spacer.