Abstract: A semiconductor package is provided. The semiconductor package includes a semiconductor die, a stack of polymer layers, redistribution elements and a passive filter. The polymer layers cover a front surface of the semiconductor die. The redistribution elements and the passive filter are disposed in the stack of polymer layers. The passive filter includes a ground plane and conductive patches. The ground plane is overlapped with the conductive patches, and the conductive patches are laterally separated from one another. The ground plane is electrically coupled to a reference voltage. The conductive patches are electrically connected to the ground plane, electrically floated, or electrically coupled to a direct current (DC) voltage.

Abstract: A backlight driving method includes steps of: (A) receiving a piece of image data that includes a number (K) of segments, where K?2; (B) generating a piece of adjustment data that includes a number (K) of segments; each segment of the adjustment data being generated based on a respective segment of the image data and upon receipt of the respective segment of the image data; (C) generating, based on a piece of delay data and on an original synchronization control (SC) signal that has a pulse, an internal SC signal that has a number (K) of pulses; and (D) generating a backlight driving output based on the adjustment data and the internal SC signal, so as to drive a backlight source of a scan-type display to emit light.

Abstract: A semiconductor device according to the present disclosure includes a bottom dielectric feature on a substrate, a plurality of channel members directly over the bottom dielectric feature, a gate structure wrapping around each of the plurality of channel members, two first epitaxial features sandwiching the bottom dielectric feature along a first direction, and two second epitaxial features sandwiching the plurality of channel members along the first direction.

Abstract: Systems, devices, and methods related to video surveillance as a service (VSaaS) are described. For example, a removable storage device, such as a secure digital (SD) memory card or a micro SD card, can be configured to run a virtual camera agent. When the removable storage device is inserted into a digital camera to provide a storage capacity for the digital camera, the agent can convert the video captured by the digital camera into video captured by a virtual camera. The virtual camera can be configured to be in compliance with the camera requirements of a VSaaS platform. Thus, a digital camera not in compliance with the platform can still be used with the platform through the deployment of the virtual camera that is enabled by the removable storage device.

Abstract: A semiconductor device and a method of forming the same are provided. The method includes forming a semiconductor fin extending from a substrate. A dummy gate stack is formed over the semiconductor fin. The dummy gate stack extends along sidewalls and a top surface of the semiconductor fin. The semiconductor fin is patterned to form a recess in the semiconductor fin. A semiconductor material is deposited in the recess. An implantation process is performed on the semiconductor material. The implantation process includes implanting first implants into the semiconductor material and implanting second implants into the semiconductor material. The first implants have a first implantation energy. The second implants have a second implantation energy different from the first implantation energy.

Abstract: A backlight driving method includes steps of: (A) generating an original synchronization control (SC) signal, and a serial input signal that contains multiple predetermined delay values; (B) generating multiple internal SC signals based on the original SC signal and the delay values, such that respective time delays of the internal SC signals with respect to the original SC signal are respectively dependent on the delay values; and (C) generating multiple backlight driving outputs based on the internal SC signals to respectively drive multiple backlight sources, such that the backlight sources emit light in an order dependent on the delay values.

Abstract: A backlight driving method includes steps of: (A) receiving a piece of image data; (B) generating a piece of adjustment data based on the image data; (C) generating, based on a plurality of predetermined delay values and on an original synchronization control (SC) signal that has a pulse, an internal SC signal that has a plurality of pulses, where respective time delays of the pulses of the internal SC signal with respect to the pulse of the original SC signal are respectively dependent on the predetermined delay values; and (D) generating a backlight driving output based on the adjustment data and the internal SC signal, so as to drive a backlight source of a scan-type display to emit light intermittently.

Abstract: A semiconductor device and a method of forming the same are provided. A semiconductor device according to the present disclosure includes a first source/drain feature, a second source/drain feature, a first semiconductor channel member and a second semiconductor channel member extending between the first and second source/drain features, and a first dielectric feature and a second dielectric feature each including a first dielectric layer and a second dielectric layer different from the first dielectric layer. The first and second dielectric features are sandwiched between the first and second semiconductor channel members.

Abstract: A fixing mechanism for a lifting device is provided. The lifting device includes a motor and a transmission shaft driven by the motor. The fixing mechanism includes a support body, a fixing assembly, a bearing, and a connection assembly. The fixing assembly includes a base plate fixed above the support body and a chamber disposed between the base plate and the support body. A bearing is arranged in the chamber and clamped between the support body and the base plate, and the transmission shaft passes through the bearing and protrudes from the base plate. The connection assembly is sleeved on the transmission shaft to together connect with the motor. Accordingly, power transmission efficiency may be improved, and vibration and noise generated during operation of the motor may be reduced.

Abstract: Corner portions of a semiconductor fin are kept on the device while removing a semiconductor fin prior to forming a backside contact. The corner portions of the semiconductor fin protect source/drain regions from etchant during backside processing. The corner portions allow the source/drain features to be formed with a convex profile on the backside. The convex profile increases volume of the source/drain features, thus, improving device performance. The convex profile also increases processing window of backside contact recess formation.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes an isolation structure formed over a substrate, and a first stacked nanostructure and a second stacked nanostructure extending above the isolation structure. The semiconductor device structure includes an inner spacer layer surrounding the first stacked nanostructure, and a dummy fin structure formed over the isolation structure. The dummy fin structure is between the first stacked nanostructure and the second stacked nanostructure, and a capping layer formed over the dummy fin structure. The inner spacer layer is in direct contact with the dummy fin structure and the capping layer.

Abstract: An optical module and a projection apparatus using the optical module are provided. The optical module includes a base, a first frame, an optical element and at least one driving assembly. The first frame is disposed in the base. The optical element is disposed in the first frame. The at least one driving assembly is disposed between the base and the first frame. The first frame is configured to move relative to the base by a magnetic force generated by the at least one driving assembly. Each of the at least one driving assembly includes a coil and a Halbach array magnet structure, the coil and the Halbach array magnet structure face each other along a first direction, a width of the Halbach array magnet structure in the first direction is W1, and a width of the coil in the first direction is W2, and 0.7?W1/W2?2.

Abstract: Embodiments of the present disclosure relate to an un-doped or low-doped epitaxial layer formed below the source/drain features. The un-doped or low-doped epitaxial layer protects the source/drain features from damage during replacement gate processes, and also prevent leakage currents in the mesa device. A semiconductor device is disclosed. The semiconductor device includes an epitaxial feature having a dopant of a first concentration, and a source/drain feature in contact with the epitaxial feature. The source/drain feature comprises the dopant of a second concentration, and the second concentration is higher than the first concentration.

Abstract: An optical device for coupling light propagating between a waveguide and an optical transmission component is provided. The optical device includes a taper portion and a grating portion. The taper portion is disposed between the grating portion and the waveguide. The grating portion includes rows of grating patterns. A first size of a first grating pattern in a first row of grating patterns is larger than a second size of a second grating pattern in a second row of grating patterns. A first distance between the first row of grating patterns and the waveguide is less than a second distance between the second row of grating patterns and the waveguide.

Abstract: Corner portions of a semiconductor fin are kept on the device while removing a semiconductor fin prior to forming a backside contact. The corner portions of the semiconductor fin protect source/drain regions from etchant during backside processing. The corner portions allow the source/drain features to be formed with a convex profile on the backside. The convex profile increases volume of the source/drain features, thus, improving device performance. The convex profile also increases processing window of backside contact recess formation.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary method comprises alternately forming first semiconductor layers and second semiconductor layers over a substrate, wherein the first semiconductor layers and the second semiconductor layers include different materials and are stacked up along a direction substantially perpendicular to a top surface of the substrate; forming a dummy gate structure over the first and second semiconductor layers; forming a source/drain (S/D) trench along a sidewall of the dummy gate structure; forming inner spacers between edge portions of the first semiconductor layers, wherein the inner spacers are bended towards the second semiconductor layers; and epitaxially growing a S/D feature in the S/D trench, wherein the S/D feature contacts the first semiconductor layers and includes facets forming a recession away from the inner spacers.

Abstract: A method includes forming a source/drain region in a semiconductor fin; after forming the source/drain region, implanting first impurities into the source/drain region; and after implanting the first impurities, implanting second impurities into the source/drain region. The first impurities have a lower formation enthalpy than the second impurities. The method further includes after implanting the second impurities, annealing the source/drain region.

Abstract: A semiconductor package device and a method of manufacturing a semiconductor package device are provided. The semiconductor package device includes a substrate, a first electronic component, and an encapsulation layer. The substrate has a first surface, a second surface opposite to the first surface, and a first opening extending from the first surface to the second surface. The first electronic component is disposed on the first surface of the substrate. The encapsulation layer is formed on the second surface of the substrate. The encapsulation layer includes a chamber connected to the first opening, and a width of the first opening is smaller than a width of the chamber.

Abstract: Systems, devices, and methods related to a Deep Learning Accelerator and memory are described. For example, a removable media (e.g., a memory card, or a USB drive) may be configured to execute instructions with matrix operands and configured with: an interface to receive a video stream; and random access memory to buffer a portion of the video stream as an input to an Artificial Neural Network and to store instructions executable by the Deep Learning Accelerator and matrices of the Artificial Neural Network. Such a removable media can be used to replace an existing removable media used in a surveillance camera to record video or images. The Deep Learning Accelerator can execute the instructions to generate analytics of the buffer portion using the Artificial Neural Network, enabling the surveillance camera that is upgraded via the use of the removable media to provide intelligent services based on the analytics.