Abstract: An example redundant power supply system comprises a power supply input to receive power from a power supply; a buck-boost converter coupled to the power supply input; and a controller coupled to the buck-boost converter. The controller is to receive a power supply identification signal from the power supply. The controller is also to enable or disable the buck-boost converter based on the power supply identification signal.

Abstract: An embodiment package comprises an integrated circuit die encapsulated in an encapsulant, a patch antenna over the integrated circuit die, and a dielectric feature disposed between the integrated circuit die and the patch antenna. The patch antenna overlaps the integrated circuit die in a top-down view. The thickness of the dielectric feature is in accordance with an operating bandwidth of the patch antenna.

Abstract: A method for managing power during communication with an implantable medical device, including establishing a communications link, utilizing a power corresponding to a session start power, to initiate a current session between an implantable medical device (IMD) and external device. A telemetry break condition of the communications link is monitored during the current session. The power utilized by the IMD is adjusted between low and high power levels, during the current session based on the telemetry break condition. The number of sessions is counted, including the current session and one or more prior sessions, in which the IMD utilized the higher power level, and a level for the session start power to be utilized to initiate a next session following the current session is adaptively learned based on the counting of the number of sessions.

Abstract: A package structure includes a plurality of stacked die units and an insulating encapsulant. The plurality of stacked die units is stacked on top of one another, where each of the plurality of stacked die units include a first semiconductor die, a first bonding chip. The first semiconductor die has a plurality of first bonding pads. The first bonding chip is stacked on the first semiconductor die and has a plurality of first bonding structure. The plurality of first bonding structures is bonded to the plurality of first bonding pads through hybrid bonding. The insulating encapsulant is encapsulating the plurality of stacked die units.

Abstract: A structure including stacked substrates, a first semiconductor die, a second semiconductor die, and an insulating encapsulation is provided. The first semiconductor die is disposed over the stacked substrates. The second semiconductor die is stacked over the first semiconductor die. The insulating encapsulation includes a first encapsulation portion encapsulating the first semiconductor die and a second encapsulation portion encapsulating the second semiconductor die.

Abstract: A semiconductor package includes a first die and a through via. The through via is electrically connected to the first die. The through via includes a first conductive layer having a first width, a second conductive layer having a second width different from the first width and a first seed layer disposed aside an interface between the first conductive layer and the second conductive layer.

Abstract: A radiative heat collective bonder or gangbonder for packaging a semiconductor die stack is provided. The bonder generally includes a shroud positioned at least partially around the die stack and a radiative heat source positioned inward of the shroud and configured to emit a radiative heat flux in a direction away from the shroud. The bonder may further include a bondhead configured to contact the backside of the topmost die in the die stack and optionally include another bondhead configured to contact a substrate beneath the die stack. The radiative heat source may be configured to direct the radiative heat flux to at least a portion of the die stack to reduce a vertical temperature gradient in the die stack. One or both of the bondheads may be configured to concurrently direct a conductive heat flux into the die stack.

Abstract: A manufacturing method of a semiconductor device includes forming a bitline on a semiconductor structure comprising a conductive feature therein. A spacer is formed adjacent to a sidewall of the bitline, and the spacer has a dielectric contact in a range of about 2 to about 3. A sacrificial layer is formed over the semiconductor structure and covering the spacer. A portion of the sacrificial layer over the bitline is etched to form a first trench to expose a top surface of the bitline. A dielectric layer is formed in the first trench and over the bitline. After forming the dielectric layer, a remaining portion of the sacrificial layer is removed to form a second trench over the semiconductor structure and an outer sidewall of the first spacer is exposed. A contact is formed in the second trench and connected to the conductive feature of the semiconductor structure.

Abstract: This disclosure is directed to a ball valve having an outer valve body, a valve core, a rotational assembly, and a functional assembly. The valve core is accommodated in the outer valve body, and the valve core has a flow channel defined therein. The rotational assembly is connected to the valve core for turning the valve core. A portion of the functional assembly is disposed in the flow channel.

Abstract: A micro-light-emitting diode (microLED) display panel includes a plurality of microLEDs arranged in rows and columns. Anodes of microLEDs in a same row are connected to a corresponding data line, and cathodes of pixels in a same column are connected to a corresponding group of common lines, each of which is connected to cathodes of microLEDs of different colors.

Abstract: In example implementations, a computing device is provided. The computing device includes an expansion interface that includes a plurality of slots. A first add-in card is connected to a first slot of the plurality of slots. A second add-in card is connected to a second slot of the plurality of slots. The computing device includes a processor communicatively coupled to the expansion interface. The processor is to detect that the first add-in card is compatible with a power savings control signal and that the second add-in card is not compatible with the power savings control signal, disable the power savings control signal to the second slot, and transmit the power savings control signal to the first slot when the first add-in card goes into a power savings mode.

Abstract: A package structure includes a plurality of stacked die units and an insulating encapsulant. The plurality of stacked die units is stacked on top of one another, where each of the plurality of stacked die units include a first semiconductor die, a first bonding chip. The first semiconductor die has a plurality of first bonding pads. The first bonding chip is stacked on the first semiconductor die and has a plurality of first bonding structure. The plurality of first bonding structures is bonded to the plurality of first bonding pads through hybrid bonding. The insulating encapsulant is encapsulating the plurality of stacked die units.

Abstract: A package structure is provided. The package structure includes a dielectric structure and an antenna structure disposed in the dielectric structure. The package structure also includes a semiconductor device disposed on the dielectric structure and a protective layer surrounding the semiconductor device. The package structure further includes a conductive feature electrically connecting the semiconductor device and the antenna structure. A portion of the antenna structure is between the conductive feature and the dielectric structure.

Abstract: In example implementations, a computing device is provided. The computing device includes an expansion interface, a first device, a second device, and a processor communicatively coupled to the expansion interface. The expansion interface includes a plurality of slots. Two slots of the plurality of slots are controlled by a single reset signal. The first device is connected to a first slot of the two slots and has a feature that is compatible with the single reset signal. The second device is connected to a second slot of the two slots and does not have the feature compatible with the single reset signal. The process is to detect the first device connected to the first slot and the second device connected to the second slot and disable the feature by preventing the first slot and the second slot from receiving the single reset signal.

Abstract: The present disclosure relates to a circuit and a method for compensating output of voltage source, and the voltage source. The circuit (20) for compensating an output (Vo) of a voltage source, comprises: a sensing unit (202), a first adjustment unit (102), an amplifier unit (205), and a second adjustment unit (101). The first adjustment unit (102) is coupled in parallel with the sensing unit (202), and configured to generate at least one pole point and/or at least one zero point in a transfer function of the circuit (20); the second adjustment unit (101) is configured to generate at least one zero point in the transfer function of the circuit (20). Therefore, the first adjustment unit, and the second adjustment unit are arranged for generating adjustable zero points and pole points in the transfer function of the voltage source, so as to obtain a higher loop bandwidth.

Abstract: A method, system and external instrument are provided. The method initiates a communication link between an external instrument (EI) and an implantable medical device (IMD), established a first connection interval for conveying data packets between the EI and IMD and monitors a connection criteria that includes at least one of a data throughput requirement. A battery indicator or link condition of the communications link is between the IMD and EI. The method further changes from the first connection interval to a second connection interval based on the connection criteria.

Abstract: A semiconductor device including a chip package, a dielectric structure, and a first antenna pattern is provided. The dielectric structure is disposed on the chip package and includes a cavity and a vent in communication with the cavity. The first antenna pattern is disposed on the dielectric structure, wherein the chip package is electrically coupled to the first antenna pattern, and the cavity of the dielectric structure is disposed between the chip package and the first antenna pattern.

Abstract: An apparatus comprises conductive segments comprising an uneven topography comprising upper surfaces of the conductive segments protruding above an upper surface of underlying materials, a first passivation material substantially conformally overlying the conductive segments, and a second passivation material overlying the first passivation material. The second passivation material is relatively thicker than the first passivation material. The apparatus also comprises structural elements overlying the second passivation material. The second passivation material has a thickness sufficient to provide a substantially flat surface above the uneven topography of the underlying conductive segments at least in regions supporting the structural elements. Microelectronic devices, memory devices, and related methods are also disclosed.

Abstract: In example implementations, a computing device is provided. The computing device includes a memory bus, a first memory module connected to a first slot of the memory bus, a second memory module connected to a second slot of the memory bus, and a processor communicatively coupled to the memory bus. The processor is to detect a mixed memory module configuration caused by the first memory module and the second memory module and train the first memory module and the second memory module to operate at a maximum mixed memory module configuration speed.

Abstract: A deep neural network (DNN) processing device with a decompressing module, comprises a storage module, for storing a plurality of binary codes, a coding tree, a zero-point value and a scale; a decompressing module, coupled to the storage module, for generating a quantized weight array according to the plurality of binary codes, the coding tree and the zero-point value wherein the quantized weight array is generated according to an aligned quantized weight array and the zero-point value; and a DNN processing module, coupled to the decompressing module, for processing an input signal according to the quantized weight array and the scale.