Abstract: The present technology proposes techniques for ensuring globally consistent transactions. This technology may allow distributed systems to ensure the causal order of read and write transactions across different partitions of a distributed database. By assigning causally generated timestamps to the transactions based on one or more globally coherent time services, the timestamps can be used to preserve and represent the causal order of the transactions in the distributed system. In this regard, certain transactions may wait for a period of time after choosing a timestamp in order to delay the start of any second transaction that might depend on it. The wait may ensure that the effects of the first transaction are not made visible until its timestamp is guaranteed to be in the past. This may ensure that a consistent snapshot of the distributed database can be determined for any past timestamp.

Abstract: A method for automatically processing a structure-reinforcing member of an aircraft, including: (S1) acquiring, by a handheld laser scanner, data of an area to be reinforced of the aircraft; (S2) controlling a robotic arm to automatically grab the reinforcing member for automatic scanning; (S3) setting a cutting path in a computer aided design (CAD) digital model followed by registration with real data to obtain an actual cutting path, and cutting the reinforcing member; (S4) controlling the robotic arm to guide a cut reinforcing member to a scanning area for automatic scanning; and (S5) subjecting point cloud data of the cut reinforcing member and the area to be reinforced to virtual assembly and calculating a machining allowance to determine whether an accuracy requirement is met; if yes, ending a task; otherwise, grinding the reinforcing member automatically, and repeating steps (S4)-(S5).

Abstract: A cart for wafer transportation includes a cart body, a separator disposed between first and second wafer holders, an airtight lock configured to seal the cart body. A wafer transfer system includes a cart including a space for holding a wafer holder, a first workstation configured to load the wafer holder into the space and pressurize the space, and a second workstation configured to depressurize the space and unload the wafer holder from the space, wherein the cart is transportable between the first workstation and the second workstation. A method for transporting wafers includes docking a cart in a workstation; loading a wafer holder into a space of the cart; pressurizing the space to cause a pressure of the space to be greater than an atmospheric pressure; maintaining the pressure of the space at the pressure; and moving the cart carrying the wafer holder away from the workstation.

Abstract: A method for performing data access performance shaping of a memory device and associated apparatus are provided. The method may include: receiving a plurality of host commands from a host device, for performing data access on the NV memory according to the plurality of host commands; and monitoring the plurality of host commands to control respective performance metrics of a plurality of access control groups of the memory device with a dual-state leaky bucket (LB) model, wherein regarding any access control group, for example: determining at least one first performance metric according to at least one first command to be a first LB fill level of a dual-state LB; in response to the first LB fill level being below a state threshold, determining the dual-state LB to be in a first predetermined state, and configuring the dual-state LB to have a first predetermined drain rate, for dynamically adjusting performance quota.

Abstract: A semiconductor device is provided, which contains a memory bank including M primary word lines and R replacement word lines, a row/column decoder, and an array of redundancy fuse elements. A sorted primary failed bit count list is generated in a descending order for the bit fail counts per word line. A sorted replacement failed bit count list is generated in an ascending order of the M primary word lines in an ascending order. The primary word lines are replaced with the replacement word lines from top to bottom on the lists until a primary failed bit count equals a replacement failed bit count or until all of the replacement word lines are used up. Optionally, the sorted primary failed bit count list may be re-sorted in an ascending or descending order of the word line address prior to the replacement process.

Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.

Abstract: A backlight module includes a light guide element including first optical microstructures and second optical microstructures. An angle value of an angle of the first optical microstructures is V1. When the second optical microstructures are respectively recessed into or protrude from a bottom surface, a projection of each sub-optical microstructure on a reference plane has a peak point closest or to farthest from a light emitting surface and a first valley point and a second valley point farthest from or closest to the light emitting surface, a height difference between the peak point and the first valley point or the second valley point is ?H, a length difference between the peak point and the first valley point or the second valley point is ?L, and tan?1(?H/?L) is V2, where V2>0 and V2?0.5·V1.

Abstract: A method of 3D motion reconstruction of outdoor, highly flexible moving subjects with multiple cameras on drones is described herein. A multi-drone capturing system is used to remove the restriction of a dedicated virtual reality shooting place, “the hot seat,” so that the actor/target is able to perform agile or long-distance activities outdoor. The subject's 3D pose parameters are estimated by the captured multi-view images by the drones, and the sequence of poses becomes the motion in time to control the animation of a pre-built 3D model. The method is able to be directly integrated into an existing Virtual Reality/Augmented reality (VR/AR) production chain, and the subject is able to be extended to animals that are difficult to be contained in a VR camera mesh space.

Abstract: An insert-storage intravenous drip moving seat includes a main body, two extension support arms, an inverted V-shaped support arm and plural moving wheels. The two extension support arms form a V-shaped structure, and each is bent and connected to a fixed bar, so that a storage space is formed under the main body and the two extension support arms; the bottom of both ends of each fixed bar has a moving wheel; the inverted V-shaped support arm is connected to the two extension support arms; the bottom of the other ends of the inverted V-shaped support arm has one of the moving wheels; both moving wheels are disposed on the same radius distance; and a guide entrance is formed between the two fixed bars and corresponsive to the inverted V-shaped support arm to provide an insert-storage design of the inverted V-shaped arm by the guide entrance.

Abstract: A semiconductor structure includes a substrate, a semiconductor fin connected to the substrate, an epitaxial layer disposed over the semiconductor fin, and a silicide feature over and in contact with the epitaxial layer. The epitaxial layer including silicon germanium and further includes gallium in an upper portion of the epitaxial layer that is in contact with the silicide feature.

Abstract: The present disclosure provides a method for analyzing a minor defect based on a progressive segmentation network, including: acquiring an original image for a surface of a component, and cropping the original image into a plurality of patches; inputting each of the patches to a minor defect feature extraction network to extract an image feature; classifying the patch into a defective image or a non-defective background image according to an extracted image feature; inputting an extracted image feature of the defective image to a defect segmentation network to obtain a segmentation mask image of a corresponding defect; and quantitatively analyzing the defect according to the segmentation mask image to obtain information such as an area, a length and a width of the defect.

Abstract: The present disclosure provides a DC motor driving system including a DC motor, a power supply device, a switch circuit, and a microprocessor. The power supply device provides an input electrical energy. The switch circuit receives the input electrical energy and outputs a motor electrical energy, which includes a motor power and a motor voltage, to the DC motor. The DC motor driving system switchably works in a constant-voltage mode, a first variable-voltage mode, or a second variable-voltage mode. In the constant-voltage mode, the input electrical energy remains unchanged. In the first variable-voltage mode, the microprocessor controls the power supply device to adjust the input electrical energy for increasing the motor voltage and the motor power. In the second variable-voltage mode, the microprocessor controls the power supply device to adjust the input electrical energy for decreasing the motor voltage and keeping the motor power unchanged.

Abstract: A method and apparatus for dosage measurement and monitoring in an ion implantation system is disclosed. In one embodiment, a transferring system, includes: a vacuum chamber, wherein the vacuum chamber is coupled to a processing chamber; a shaft coupled to a ball screw, wherein the ball screw and the shaft are configured in the vacuum chamber; and a vacuum rotary feedthrough, wherein the vacuum rotary feedthrough comprises a magnetic fluid seal so as to provide a high vacuum sealing, and wherein the vacuum rotary feedthrough is configured through a first end of the vacuum chamber and coupled to the ball screw so as to provide a rotary motion on the ball screw.

Abstract: A portable electronic device and a plate antenna module thereof are provided. The plate antenna module includes an antenna carrying structure, an inner surrounding radiation structure, a first inner feeding structure, an outer surrounding radiation structure, and a first outer feeding structure. The first inner feeding structure is surrounded by the inner surrounding radiation structure. The inner surrounding radiation structure is surrounded by the outer surrounding radiation structure. The inner surrounding radiation structure and the outer surrounding radiation structure are respectively disposed on two different planes of the antenna carrying structure.

Abstract: In example implementations, a computing device is provided. The computing device includes a memory bus, a first memory module connected to a first slot of the memory bus, a second memory module connected to a second slot of the memory bus, and a processor communicatively coupled to the memory bus. The processor is to detect a mixed memory module configuration caused by the first memory module and the second memory module and train the first memory module and the second memory module to operate at a maximum mixed memory module configuration speed.

Abstract: A light source module includes a light guide plate, a light-emitting element, and first and second prism sheets. One of the light-emitting surface and the bottom surface of the light guide plate has strip-shaped microstructures. The bottom surface has bottom microstructures, and the angle between the first surface of each bottom microstructure and the bottom surface is 1° to 17°. The first prism sheet is disposed on the light-emitting surface and between the light-emitting surface and the second prism sheet and includes first prism rods. The second prism sheet includes second prism rods. The aspect ratio of the strip-shaped microstructure is greater than 0.2. The angle between the maximum luminance direction of the light from the light-emitting surface and the normal direction of the light-emitting surface is less than 70°. The light-emitting angle range is less than 40°. A display device including the light source module is also provided.

Abstract: An adapter with power delivery function includes a power transmission module, a first input connector, and an output connector. The power transmission module includes a bidirectional DC charging and discharging circuit, a bypass circuit, and a control circuit. The control circuit is coupled to the bidirectional DC charging and discharging circuit and the bypass circuit. The first input connector is coupled to the bidirectional DC charging and discharging circuit, the bypass circuit, and the control circuit. The first input connector includes a high voltage level pin, a low voltage level pin, and an identification pin. The output pin is coupled to the bidirectional DC charging and discharging circuit and the bypass circuit. The present disclosure further provides an electric vehicle and a wire with power delivery function.

Abstract: Example latching assemblies and electronic devices including the latching assemblies are disclosed. In an example, an electronic device includes a housing including a cavity to receive a peripheral device therein. In addition, the electronic device includes a latching assembly disposed within the housing. The latching assembly includes a latch biased toward the cavity to engage with the peripheral device, and a block. Displacement of the block is to slidingly engage the block along the latch and thereby withdraw the latch from the cavity.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a fin active region formed on a semiconductor substrate and spanning between a first sidewall of a first shallow trench isolation (STI) feature and a second sidewall of a second STI feature; an anti-punch through (APT) feature of a first type conductivity; and a channel material layer of the first type conductivity, disposed on the APT feature and having a second doping concentration less than the first doping concentration. The APT feature is formed on the fin active region, spans between the first sidewall and the second sidewall, and has a first doping concentration.

Abstract: An apparatus is described that includes an image sensor and a light source driver circuit integrated in a same semiconductor chip package. The image sensor includes visible light pixels and depth pixels. The depth pixels are to sense light generated with a light source drive signal. The light source drive signal is generated with the light source driver circuit.