Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a fin disposed in a first region of the semiconductor device, channel members disposed in a second region of the semiconductor device and stacked in a vertical direction, first and second metal gates disposed on a top surface of the fin, a third metal gate wrapping around each of the channel members, a first implant region in the fin with a first conductivity type, and a second implant region in the fin with a second conductivity opposite the first conductivity type. The fin includes first and second type epitaxial layers alternatingly disposed in the vertical direction. The first and second type epitaxial layers have different material compositions. The first type epitaxial layers and the channel members have the same material composition.

Abstract: A semiconductor device includes a fin extending from a substrate. The fin has a source/drain region and a channel region. The channel region includes a first semiconductor layer and a second semiconductor layer disposed over the first semiconductor layer and vertically separated from the first semiconductor layer by a spacing area. A high-k dielectric layer at least partially wraps around the first semiconductor layer and the second semiconductor layer. A metal layer is formed along opposing sidewalls of the high-k dielectric layer. The metal layer includes a first material. The spacing area is free of the first material.

Abstract: A host system initiates an abort of a command that has been placed into a submission queue (SQ) of the host system. The host system identifies at least one of a first outcome and a second outcome. When the first outcome indicates that the command is not completed and the second outcome indicates that the SQ entry has been fetched from the SQ, the host system sends an abort request to a storage device, and issues a cleanup request to direct the host controller to reclaim host hardware resources allocated to the command. The host system adds a completion queue (CQ) entry to a CQ and sets an overall command status (OCS) value of the CQ entry based on at least one of the first outcome and the second outcome.

Abstract: A preparation method for a circuit board connection structure includes: providing a circuit board module that including a first outer wiring layer, and the first outer wiring layer including solder pads; forming a first pyrolytic adhesive layer and an inner wiring layer on the first outer wiring layer; forming a second pyrolytic adhesive layer and a second copper foil layer on the inner wiring layer; defining a plurality of through holes each configured to expose one of the solder pads; forming a copper plating layer on the second copper foil layer; etching the copper plating layer and the second copper foil layer to form a second outer wiring layer, thereby obtaining an intermediate body; heating and washing the intermediate body to remove the first pyrolytic adhesive layer and the second pyrolytic adhesive layer. The present application also provides a circuit board connection structure.

Abstract: A semiconductor device comprises a fin structure disposed over a substrate; a gate structure disposed over part of the fin structure; a source/drain structure, which includes part of the fin structure not covered by the gate structure; an interlayer dielectric layer formed over the fin structure, the gate structure, and the source/drain structure; a contact hole formed in the interlayer dielectric layer; and a contact material disposed in the contact hole. The fin structure extends in a first direction and includes an upper layer, wherein a part of the upper layer is exposed from an isolation insulating layer. The gate structure extends in a second direction perpendicular to the first direction. The contact material includes a silicon phosphide layer and a metal layer.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first metal layer over a substrate, forming a dielectric layer over the first metal layer. The method includes forming a trench in the dielectric layer, and performing a surface treatment process on a sidewall surface of the trench to form a hydrophobic layer. The hydrophobic layer is formed on a sidewall surface of the dielectric layer. The method further includes depositing a metal material in the trench and over the hydrophobic layer to form a via structure.

Abstract: Provided is a composition including a lactic acid bacterium and a carrier thereof for prophylaxis or treatment of an allergy. The lactic acid bacterium is Lactobacillus paragasseri, such as Lactobacillus paragasseri BBM171 deposited under DSMZ Accession No. DSM 34311. Also provided is a method for preventing or treating an allergy in a subject that includes administering an effective amount of the composition of Lactobacillus paragasseri to the subject.

Abstract: A semiconductor device includes a first set of nanostructures stacked over a substrate in a vertical direction, and each of the first set of nanostructures includes a first end portion and a second end portion, and a first middle portion laterally between the first end portion and the second end portion. The first end portion and the second end portion are thicker than the first middle portion. The semiconductor device also includes a first plurality of semiconductor capping layers around the first middle portions of the first set of nanostructures, and a gate structure around the first plurality of semiconductor capping layers.

Abstract: This disclosure relates to a surgical tool configured for holding an implant includes an inner rod and a sleeve. The inner rod includes a rod portion and a holding portion. The holding portion is located at one end of the rod portion and has a first accommodation space configured for accommodating at least part of the implant. The sleeve includes a sleeving portion and a retaining portion. The sleeving portion is slidably sleeved on the rod portion of the inner rod. The retaining portion is located at one end of the sleeving portion and selectively presses against the holding portion. The inner rod further includes at least one fin portion protruded from the holding portion and located in the first accommodation space for being inserted into at least one slot of the implant.

Abstract: An apparatus is provided with processing circuitry that receives a phase image acquired at a corresponding cardiac phase, determines, from the received phase image, a mask image of a particular cardiac region, applies both the determined mask image and the phase image to inputs of a trained neural network model to obtain, from outputs of the neural network model, a location probability map. The neural network model is trained with a set of input data and a corresponding set of output data. The input data includes a training mask image and a training phase image, and the output data includes a training location probability map. The processing circuitry calculates, for the cardiac phase, from the determined location probability map output from the trained neural network model, a value of a cardiac motion metric. The determined location probability map specifies a probable location of a cardiac vessel.

Abstract: A package assembly and a manufacturing method thereof are provided. The package assembly includes a first package component and an optical signal port disposed aside the first package component. The first package component includes a first die including an electronic integrated circuit, a first insulating encapsulation laterally covering the first die, a redistribution structure disposed on the first die and the first insulating encapsulation, and a second die including a photonic integrated circuit and electrically coupled to the first die through the redistribution structure. The optical signal port is optically coupled to an edge facet of the second die of the first package component.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a first substrate, a device layer, a first dielectric layer, a second dielectric layer, a second substrate, and a circuit layer. The device layer is disposed on the first substrate. The first dielectric layer is disposed on the device layer. The second dielectric layer is disposed on the first dielectric layer. The second substrate is disposed on the second dielectric layer. The circuit layer is disposed on the second substrate.

Abstract: A host system is coupled to a storage device and manages completion queues (CQs) for the storage device. The host system includes a host controller and memory that stores submission queues (SQs) and the CQs. The host controller fetches a command from a given SQ that corresponds to a target CQ. The host controller saves the command in an SQ internal buffer of the host controller, calculates an available capacity (AC) associated with the given SQ for the host system to store a response to the command from the storage device, and sends the command to the storage device when the available capacity is non-zero. The available capacity is calculated based on, at least in part, available slots in the target CQ.

Abstract: An information processing method controls a CT scanner such that the method includes, but is not limited to, determining an X-ray irradiation period from an electrocardiogram acquired from an electrocardiography device attached to a living object to be imaged, by processing the electrocardiogram at multiple different cardiac phases; performing, by controlling a CT gantry including and rotatably supporting an X-ray source and an X-ray detector, a diagnostic CT scan in the determined X-ray irradiation period, of at least a part of the heart region, to obtain a CT image; and causing a display unit to display the obtained CT image. The method can be performed at least by an information processing apparatus including processing circuitry and/or computer instructions stored in a non-transitory computer readable storage medium for performing the method.

Abstract: A display panel and a spliced display are provided. The display panel includes a substrate, a plurality of light-emitting elements, a driving circuit, and an optical sensor. The substrate includes a through hole, and the through hole includes a hole. The plurality of the light-emitting elements are disposed on the substrate. The through hole is located in a region between two of the plurality of the light-emitting elements. The driving circuit is disposed on the substrate and electrically connected to the plurality of the light-emitting elements. The optical sensor is disposed corresponding to the through hole and receives sensing light through the hole. The width W of the hole meets the equation of H?W<D. H is the depth of the hole, and D is the distance between the two of the plurality of the light-emitting elements.

Abstract: The invention encompasses hydrogels, monomer precursors of the hydrogels, methods for the preparation thereof, and methods of use therefor. The linking of monomers can take place using non-radical, bioorthogonal reactions such as copper-free click-chemistry.

Abstract: The present invention provides a storage node contact structure of a memory device comprising a substrate having a dielectric layer comprising a recess, a first tungsten metal layer, and an adhesive layer on the first tungsten metal layer and a second tungsten metal layer on the adhesive layer, wherein the second tungsten metal layer is formed by a physical vapor deposition (PVD).

Abstract: A semiconductor structure includes a first semiconductor layer having an upper portion over a lower portion, a source/drain feature over the upper portion of the first semiconductor layer, a first contact structure under the lower portion of the first semiconductor layer and electrically connected to the lower portion of the first semiconductor layer. The lower portion is more heavily doped with first dopants than the upper portion. The first dopants are of a first conductivity-type. The source/drain feature includes second dopants of a second conductivity-type opposite to the first conductivity-type.

Abstract: The present application provides a circuit board and a manufacturing method thereof. The manufacturing method includes: providing a stacked board; the stacked board includes a third conducting circuit, a second substrate, a first conducting circuit, a first substrate, and a second conducting circuit, which are stacked disposed in that order; defining several through holes on a surface of the stacked board along a stacked direction of the stacked board; and manufacturing antenna conductors in the through holes. The antenna conductors are disposed in the through holes on a surface of the stacked board, the antenna conductors on different layers are connected to corresponding conducting circuits, some of the antenna conductors are directly connected with the conducting circuit. A loss of signals while transmitting is reduced, and the circuit board including the antenna structure is changed from an up-down structure into a left-right structure for reducing a board thickness.