Abstract: Provided herein are a mutant envelope protein of Zika virus and a nucleic acid molecule including a nucleotide sequence encoding the mutant envelope protein. The mutant envelope protein, which preferably has a threonine substitution at 105th position, or an asparagine substitution at 248th position and a threonine substitution at 250th position in an amino acid sequence of SEQ ID NO: 1, includes an N-glycan masking a fusion loop region of the mutant envelope protein of Zika virus. Also provided herein is a vaccine composition, including the mutant envelope protein or a recombinant virus including the nucleic acid molecule. Also provided herein is a method of preventing Zika virus infection and reducing antibody-dependent enhancement of dengue virus infection, including administering to a subject in need thereof an effective amount of a vaccine composition including the mutant envelope protein of Zika virus.

Abstract: A display panel comprising a first substrate, a second substrate, a color conversion layer, and an image sensing layer. A plurality of display units are between the first substrate and the second substrate. At least one of the plurality of display units has at least three sub-pixels. Each of the sub-pixels at least has one display region and a light shielding region disposed on at least one side of the display region. The color conversion layer is disposed in the display unit. Each of the color conversion elements is disposed in at least one portion of the light shielding region of each of the sub-pixels. The image sensing layer is disposed on the display unit and at least partially overlaps the color conversion layer. Each of the image sensing elements is disposed in at least one portion of the light shielding region of each of the sub-pixels to serve as an image sensing region.

Abstract: A display panel comprising a first substrate, a second substrate, a color conversion layer, and an image sensing layer. A plurality of display units are between the first substrate and the second substrate. At least one of the plurality of display units has at least three sub-pixels. Each of the sub-pixels at least has one display region and a light shielding region disposed on at least one side of the display region. The color conversion layer is disposed in the display unit. Each of the color conversion elements is disposed in at least one portion of the light shielding region of each of the sub-pixels. The image sensing layer is disposed on the display unit and at least partially overlaps the color conversion layer. Each of the image sensing elements is disposed in at least one portion of the light shielding region of each of the sub-pixels to serve as an image sensing region.

Abstract: A fabricating method of a stop layer includes providing a substrate. The substrate is divided into a memory region and a peripheral circuit region. Two conductive lines are disposed within the peripheral circuit region. Then, an atomic layer deposition is performed to form a silicon nitride layer to cover the conductive lines. Later, after forming the silicon nitride layer, a silicon carbon nitride layer is formed to cover the silicon nitride layer. The silicon carbon nitride layer serves as a stop layer.

Abstract: A fingerprint identification device and a method for manufacturing the fingerprint identification device are provided. The fingerprint identification device includes a solder ball array, a re-distribution layer, an image sensing integrated circuit (IC), a light emitting circuit, a photic layer and a molding material. The re-distribution layer disposed on the solder ball array is electrically connected to a plurality of solder balls. The image sensing IC includes a plurality of through silicon vias (TSVs), and the TSVs are correspondingly electrically connected to the solder balls, respectively, through the re-distribution layer. The light emitting circuit is disposed on one side of the image sensing IC, and electrically connected to the image sensing IC through the re-distribution layer. The image sensing IC controls the light emitting circuit. The photic layer is disposed on the image sensing IC. The molding material encloses the image sensing IC.

Abstract: A method of fabricating a DRAM includes providing a substrate. Later, a first mask layer is formed to cover the substrate. The first mask layer includes a hydrogen-containing silicon nitride layer and a silicon oxide layer. The hydrogen-containing silicon nitride layer has the chemical formula: SixNyHz, wherein x is between 4 and 8, y is between 3.5 and 9.5, and z equals 1. After that, the first mask layer is patterned to form a first patterned mask layer. Next, the substrate is etched by taking the first patterned mask layer as a mask to form a word line trench. Subsequently, the first patterned mask layer is removed entirely. Finally, a word line is formed in the word line trench.

Abstract: A fabricating method of a stop layer includes providing a substrate. The substrate is divided into a memory region and a peripheral circuit region. Two conductive lines are disposed within the peripheral circuit region. Then, an atomic layer deposition is performed to form a silicon nitride layer to cover the conductive lines. Later, after forming the silicon nitride layer, a silicon carbon nitride layer is formed to cover the silicon nitride layer. The silicon carbon nitride layer serves as a stop layer.

Abstract: Provided herein are a mutant envelope protein of Zika virus and a nucleic acid molecule including a nucleotide sequence encoding the mutant envelope protein. The mutant envelope protein, which preferably has a threonine substitution at 105th position, or an asparagine substitution at 248th position and a threonine substitution at 250th position in an amino acid sequence of SEQ ID NO: 1, includes an N-glycan masking a fusion loop region of the mutant envelope protein of Zika virus. Also provided herein is a vaccine composition, including the mutant envelope protein or a recombinant virus including the nucleic acid molecule. Also provided herein is a method of preventing Zika virus infection and reducing antibody-dependent enhancement of dengue virus infection, including administering to a subject in need thereof an effective amount of a vaccine composition including the mutant envelope protein of Zika virus.

Abstract: A display device and a manufacturing method thereof are provided. The manufacturing method of the display device includes following steps: assembling a protection substrate and a display panel, wherein the protection substrate has an inner surface, facing a first surface of the display panel, and an end portion extends towards the display panel; assembling a device component and the display panel disposed between the device component and the protection substrate, wherein the device component has a component side surface, the display panel has a side surface, and a gap is formed among the end portion, the component side surface and the side surface; extending a dispensing extending portion to the gap; and dispensing an adhesive to the side surface and the component side surface to form an adhesive layer.

Abstract: Provided is an influenza mucosal vaccine composition and preparation and application thereof. This composition contains an antigen fusion protein which includes an influenza virus antigen and a Type IIb heat-labile enterotoxin A subunit from Escherichia coli. Immunization with this antigen fusion protein induces cellular and humoral immune responses, including systemic and mucosal immune responses, against a specific influenza virus in a subject, and therefore protects the subject from viral infection.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a bit line structure on a substrate; forming a first spacer, a second spacer, and a third spacer around the bit line structure; forming an interlayer dielectric (ILD) layer on the bit line structure; planarizing part of the ILD layer; removing the ILD layer and the second spacer to form a recess between the first spacer and the third spacer; and forming a liner in the recess.

Abstract: A data encryption and decryption method is provided. The method is used in a data encryption and decryption system and includes: establishing, by a data encryption and decryption device, a first secure sockets layer (SSL) connection with a mobile device; receiving a data transmitted from the mobile device; generating a first symmetric key, encrypting the data using the first symmetric key, and generating first encrypted data; encrypting the first symmetric key using a first public key, and generating a first encrypted key; and transmitting the first encrypted data and the first encrypted key to the mobile device.

Abstract: A semiconductor memory device includes a semiconductor substrate, a first support layer, a first electrode, a capacitor dielectric layer, and a second electrode. The first support layer is disposed on the semiconductor substrate. The first electrode is disposed on the semiconductor substrate and penetrates the first support layer. The capacitor dielectric layer is disposed on the first electrode. The second electrode is disposed on the semiconductor substrate, and at least a part of the capacitor dielectric layer is disposed between the first electrode and the second electrode. The first support layer includes a carbon doped nitride layer, and a carbon concentration of a bottom portion of the first support layer is higher than a carbon concentration of a top portion of the first support layer.

Abstract: A method of manufacturing memory devices is provided in the present invention. The method includes the steps of providing a substrate with multiple capacitors, wherein the capacitor includes a lower electrode layer, an insulating layer and an upper electrode layer and a top plate, forming a tungsten layer on the upper electrode, performing a nitriding plasma treatment to the tungsten layer to form a tungsten nitride layer, and forming a pre-metal dielectric layer on the tungsten nitride layer.

Abstract: The present disclosure illustrates a switch device for substation and an error warning method thereof. The switch device accesses and copies a generic object oriented substation event (GOOSE) packet, and when the copied GOOSE packet is determined to trigger an abnormal condition event, the switch device generates and transmits an abnormal condition event confirmation request to an upstream switch device. A warning message is issued when a ready response cannot be received by the switch device from the upstream switch device. Therefore, the technical effect of quickly and accurately finding the switch device triggering the abnormal condition event first to facilitate repair may be achieved.

Abstract: The present invention provides a method for forming an amorphous silicon multiple layer structure, the method comprises the flowing steps: first, a substrate material layer is provided, next, a first amorphous silicon layer is formed on the substrate material layer, wherein the first amorphous silicon layer includes a plurality of hydrogen atoms disposed therein, afterwards, an UV curing process is performed to the first amorphous silicon layer, so as to remove the hydrogen atoms from the first amorphous silicon layer, finally, a second amorphous silicon layer is formed on the first amorphous silicon layer.

Abstract: A method of manufacturing memory devices is provided in the present invention. The method includes the steps of providing a substrate with multiple capacitors, wherein the capacitor includes a lower electrode layer, an insulating layer and an upper electrode layer and a top plate, forming a tungsten layer on the upper electrode, performing a nitriding plasma treatment to the tungsten layer to form a tungsten nitride layer, and forming a pre-metal dielectric layer on the tungsten nitride layer.

Abstract: An expansion card with homogenized light outputs and light-homogenizing device thereof are disclosed. The expansion card includes a circuit board and a light-homogenizing device. The circuit board includes a light-emitting device disposed on a first side edge. The light-homogenizing device includes a light-guiding body, a light-diffusion element, and a light-turning element. The light-guiding body includes a light-input side and a light-output side opposite to each other, and the light-input side is adjacent to the first side edge. The light-diffusion element is disposed on the light-input side of the light-guiding body and opposite to the light-emitting device. The light-diffusion element and the light-out side are configured to diffuse the light beams entering into the light-guiding body from the light-emitting device and form a light-transmitting path.

Abstract: A semiconductor memory device includes a semiconductor substrate, a first support layer, a first electrode, a capacitor dielectric layer, and a second electrode. The first support layer is disposed on the semiconductor substrate. The first electrode is disposed on the semiconductor substrate and penetrates the first support layer. The capacitor dielectric layer is disposed on the first electrode. The second electrode is disposed on the semiconductor substrate, and at least a part of the capacitor dielectric layer is disposed between the first electrode and the second electrode. The first support layer includes a carbon doped nitride layer, and a carbon concentration of a bottom portion of the first support layer is higher than a carbon concentration of a top portion of the first support layer.

Abstract: The present invention provides a method for fabricating a semiconductor device, comprising at least the steps of: providing a substrate in which a memory region and a peripheral region are defined, the memory region includes a plurality of memory cells, each memory cell includes at least a first transistor and a capacitor, the peripheral region compress a second transistor, a first insulating layer is formed within the memory region and the peripheral region by an atomic layer deposition process, covering the capacitor of the memory cells in the memory region and the second transistor in the peripheral region, and a second insulating layer is formed, overlying the first insulating layer and the peripheral region. Finally, a contact structure is formed within the second insulating layer, and electrically connecting the second transistor.