Abstract: The present disclosure provides one embodiment of an IC method that includes receiving an IC design layout including a plurality of main features; choosing isolation distances to the IC design layout; oversizing the main features according to each of the isolation distances; generating a space block layer for the each of the isolation distances by a Boolean operation according to oversized main features; choosing an optimized space block layer and an optimized block dummy density ratio of the IC design layout according to pattern density variation; generating dummy features in the optimized space block layer according to the optimized block dummy density ratio; and forming a tape-out data of the IC design layout including the main features and the dummy features, for IC fabrication.

Abstract: A method of fabricating a TMR sensor that includes a free layer having at least one B-containing (BC) layer made of CoFeB, CoFeBM, CoB, CoBM, or CoBLM, and a plurality of non-B containing (NBC) layers made of CoFe, CoFeM, or CoFeLM is disclosed where L and M are one of Ni, Ta, Ti, W, Zr, Hf, Tb, or Nb. In every embodiment, a NBC layer contacts the tunnel barrier and NBC layers each with a thickness from 2 to 8 Angstroms are formed in alternating fashion with one or more BC layers each 10 to 80 Angstroms thick. Total free layer thickness is <100 Angstroms. The TMR sensor may be annealed with a one step or two step process. The free layer configuration described herein enables a significant noise reduction (SNR enhancement) while realizing a high TMR ratio, low magnetostriction, low RA, and low Hc values.

Abstract: The present disclosure provides a method that includes receiving an IC design layout having main features and generating a plurality of space block layers to the IC design layout. The method also includes calculating main pattern density PD0 and dummy pattern density PDs of the IC design layout and calculating a least variation block dummy density ratio (LVBDDR) of the IC design layout for each of the space block layers according to the main pattern density and the dummy pattern density. The method further includes choosing an optimized space block layer and an optimized block dummy density ratio according to the LVBDDR and generating a modified IC design layout from the IC design layout according to the optimized space block layer and the optimized block dummy density ratio. Additionally, the method includes forming a tape-out data of the modified IC design layout for IC fabrication.

Abstract: Processing infrastructure metadata information about a virtual resource of a virtual cloud is disclosed. Infrastructure metadata information is collected. The collected metadata information is about a virtual resource of a virtual cloud. A storage of infrastructure metadata information is updated. The updating of the storage of infrastructure metadata information is performed using the collected information.

Abstract: A method of forming a wiring structure for an integrated circuit device includes forming a first metal line within an interlevel dielectric (ILD) layer, and forming a second metal line in the ILD layer adjacent the first metal line; masking selected regions of the first and second metal lines; selectively plating metal cap regions over exposed regions of the first and second metal lines at periodic intervals such that a spacing between adjacent metal cap regions of an individual metal line corresponds to a critical length, L, at which a back stress gradient balances an electromigration force in the individual metal line, so as to suppress mass transport of electrons; and wherein the metal cap regions of the first metal line are formed at staggered locations with respect to the metal cap regions of the second metal line, along a common longitudinal axis.

Abstract: A dual stage LNA for use in multiband receivers is disclosed. In an exemplary embodiment, an apparatus includes a plurality of first stage amplifiers having a plurality of first stage output ports, respectively, to output first stage amplified voltage mode signals. The apparatus also includes a plurality of second stage amplifiers having a plurality of second stage input ports, respectively, and second stage output ports to output amplified current mode signals. The apparatus also includes a switch apparatus having input terminals connected to the first stage output ports and output terminals connected to the second stage input ports, the switch apparatus to connect selected second stage input ports to selected first stage output ports.

Abstract: The present disclosure provides an embodiment of a method, for a lithography process for reducing a critical dimension (CD) by a factor n wherein n<1. The method includes providing a pattern generator having a first pixel size Si to generate an alternating data grid having a second pixel size S2 that is <S1, wherein the pattern generator includes multiple grid segments configured to offset from each other in a first direction; and scanning the pattern generator in a second direction perpendicular to the first direction during the lithography process such that each subsequent segment of the grid segments is controlled to have a time delay relative to a preceding segment of the grid segments.

Abstract: A physical unclonable function (PUF) semiconductor device includes a semiconductor substrate extending along a first direction to define a length and a second direction opposite the first direction to define a thickness. At least one pair of semiconductor structures is formed on the semiconductor substrate. The semiconductor structures include a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first gate dielectric layer having a first shape that defines a first threshold voltage. The second semiconductor structure includes a second gate dielectric layer having a second dielectric shape that is reversely arranged with respect to the first shape and that defines a second threshold voltage different from the first threshold voltage.

Abstract: A wafer probing system includes a probe card assembly having a plurality of individual probe structures configured make contact with a semiconductor wafer mounted on a motor driven wafer chuck, with each probe structure configured with a pressure sensing unit integrated therewith; and a controller configured to drive the probe card assembly with one or more piezoelectric driver units response to feedback from the pressure sensing units of the individual probe structures.

Abstract: A system and method for maskless direct write lithography are disclosed. The method includes receiving a plurality of pixels that represent an integrated circuit (IC) layout; identifying a first subset of the pixels that are suitable for a first compression method; and identifying a second subset of the pixels that are suitable for a second compression method. The method further includes compressing the first and second subset using the first and second compression method respectively, resulting in compressed data. The method further includes delivering the compressed data to a maskless direct writer for manufacturing a substrate. In embodiments, the first compression method uses a run-length encoding and the second compression method uses a dictionary-based encoding. Due to the hybrid compression method, the compressed data can be decompressed with a data rate expansion ratio sufficient for high-volume IC manufacturing.

Abstract: Disclosed herein is a control system for NOx reduction in a power plant, the control system comprising a model predictive controller; a proportional integral differential controller and/or an adaptive controller; where the proportional integral differential controller and/or an adaptive controller are subordinated to and in operative communication with the model predictive controller; where the proportional integral differential controller and/or an adaptive controller comprise a feedback loop; a NOx reduction system comprising a NOx reducing agent supply tank and a water supply tank; and a furnace for combusting a fuel; where the furnace lies downstream of the NOx reduction system and where the furnace is provided with a plurality of nozzles that are in fluid communication with the NOx reduction system; where the control system is in electrical communication with the NOx reduction system.

Abstract: An electric conduction heat dissipation substrate includes a ceramic substrate, and a seed layer, and a buffering material layer and a copper circuit layer formed thereon in order. The buffering material layer has a coefficient of thermal expansion between those of the ceramic substrate and the copper circuit layer. Moreover, the buffering material layer is composed of alloy material and ceramic material or composed of metal material and ceramic material.

Abstract: A positioning system comprises a sweeper and a positioning device arranged on a ceiling. The sweeper has a lighting component for emitting light. The positioning device at least has a height measuring unit and a plurality of light-sensitive units. The positioning device measures a vertical distance between the positioning device and a floor through the height measuring unit. The positioning device receives the light emitted from the emitting light of the sweeper through the light-sensitive units, and calculates an oblique distance between the positioning device and the sweeper based on different strengths of the light respectively received from each of the plurality of light-sensitive units. Therefore, the positioning device can calculates a parallel distance between the positioning device and the sweeper based on the vertical distance and the oblique distance, and further determines a related position of the sweeper opposite to the positioning device.

Abstract: A method for fabricating an interconnect function array includes forming a first plurality of conductive lines on a substrate, forming an insulator layer over the first plurality of conductive lines and the substrate, removing portions of the insulator layer to define cavities in the insulator layer that expose portions of the substrate and the first plurality of conductive lines, wherein the removal of the portions of the insulator layer results in a substantially random arrangement of cavities exposing portions of the substrate and the first plurality of conductive lines, depositing a conductive material in the cavities, and forming a second plurality of conductive lines on portions of the conductive material in the cavities and the insulator layer.

Abstract: A physical unclonable function (PUF) semiconductor device includes a semiconductor substrate extending along a first direction to define a length and a second direction opposite the first direction to define a thickness. At least one pair of semiconductor structures is formed on the semiconductor substrate. The semiconductor structures include a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a first gate dielectric layer having a first shape that defines a first threshold voltage. The second semiconductor structure includes a second gate dielectric layer having a second dielectric shape that is reversely arranged with respect to the first shape and that defines a second threshold voltage different from the first threshold voltage.

Abstract: A back end of the line (BEOL) fuse structure having a stack of vias. The stacking of vias leads to high aspect ratios making liner and seed coverage inside the vias poorer. The weakness of the liner and seed layers leads to a higher probability of electromigration (EM) failure. The fuse structure addresses failures due to poor liner and seed coverage. Design features permit determining where failures occur, determining the extent of the damaged region after fuse programming and preventing further propagation of the damaged dielectric region.

Abstract: A method for fabricating an interconnect function array includes forming a first plurality of conductive lines on a substrate, forming an insulator layer over the first plurality of conductive lines and the substrate, removing portions of the insulator layer to define cavities in the insulator layer that expose portions of the substrate and the first plurality of conductive lines, wherein the removal of the portions of the insulator layer results in a substantially random arrangement of cavities exposing portions of the substrate and the first plurality of conductive lines, depositing a conductive material in the cavities, and forming a second plurality of conductive lines on portions of the conductive material in the cavities and the insulator layer.

Abstract: A wireless charging system includes a wireless charging device and a power-consuming device installed in a charging area. The wireless charging device has a signal conversion module connected to a controller, a transmitter antenna and a power input terminal. The power-consuming device has a receiver coil connected to a rectifier and outputting generated power through a power output terminal. Before or when the wireless charging device charges the power-consuming device, the controller of the wireless charging device can detect a power consumption status, voltage and current information and phase difference information of the transmitter antenna to instantly determine if any foreign metal object enters the charging area, thereby preventing high temperature generated by the foreign metal object from causing equipment damage and danger and enhancing wireless charging safety.

Abstract: A device includes a main two-stage low noise amplifier (LNA) configured to amplify a carrier aggregation (CA) communication signal, the main two-stage LNA comprising a first LNA stage and a second LNA stage, an output of the first LNA stage having a first stage second order intermodulation product, the second LNA stage comprising a phase-inverter configured to phase-invert the output of the first LNA stage to generate a second stage phase-inverted output, and an auxiliary LNA stage coupled to the main two-stage LNA, the auxiliary LNA stage configured to cancel the first stage second order intermodulation product.

Abstract: A technique for converting design shapes into pixel values is provided. The technique may be used to control a direct-write or other lithographic process performed on a workpiece. In an exemplary embodiment, the method includes receiving, at a computing system, a design database specifying a feature having more than four vertices. The computing system also receives a pixel grid. A set of rectangles corresponding to the feature is determined, and the computing system determines an area of a pixel of the pixel grid overlapped by the feature based on the set of rectangles. In some such embodiments, a lithographic exposure intensity is determined for the pixel based on the area overlapped by the feature, and the lithographic exposure intensity is provided for patterning of a workpiece.