Abstract: The present disclosure, in some embodiments, relates to a ferroelectric memory device. The ferroelectric memory device includes a multi-layer stack disposed on a substrate. The multi-layer stack has a plurality of conductive layers and a plurality of dielectric layers stacked alternately. A channel layer penetrates through the plurality of conductive layers and the plurality of dielectric layers. A ferroelectric layer is disposed between the channel layer and both of the plurality of conductive layers and the plurality of dielectric layers. A plurality of oxygen scavenging layers are disposed along sidewalls of the plurality of conductive layer. The plurality of oxygen scavenging layers laterally separate the ferroelectric layer from the plurality of conductive layers.

Abstract: The present disclosure provides a method and a system for scanning wafer. The system captures a defect image of a wafer, and generates a reference image corresponding to the first defect image based on a reference image generation model. The system generates a defect marked image based on the defect image and the reference image.

Abstract: The present disclosure discloses a video interface conversion device that includes a first and a second interface transmission circuit, a color conversion circuit and an image compression circuit. The first and the second interface transmission circuit are respectively electrically coupled to an image source and a display terminal. The second interface transmission circuit negotiates a maximum output bandwidth with the display terminal such that the first interface transmission circuit compares an input data bandwidth of a data signal received from the image source and the maximum output bandwidth. When the maximum output bandwidth is smaller than the input data bandwidth, an image compression and/or a color coding conversion is performed on the data signal, and the data signal having the processed input data bandwidth being smaller than or equal to the maximum output bandwidth is further transmitted by the second interface transmission circuit to the display terminal.

Abstract: A communication device includes a nonconductive track, an antenna element, a first turning wheel, and a second turning wheel. The antenna element is disposed on the nonconductive track. The first turning wheel and the second turning wheel drive the nonconductive track according to a control signal, so as to adjust the position of the antenna element. The communication device provides an almost omnidirectional radiation pattern.

Abstract: An antenna structure includes a first signal source, a second signal source, a first radiator, a second radiator, a third radiator, a first circuit, and a second circuit. The first signal source is used to generate a first wireless signal, and the second signal source is used to generate a second wireless signal. The first radiator is coupled to the first signal source to receive the first wireless signal, and the second radiator is coupled to the second signal source to receive the second wireless signal. The first circuit has a first end coupled to the third radiator and a second end coupled to the first radiator or the first signal source. The second circuit has a first end coupled to the third radiator and a second end coupled to the second radiator or the second signal source.

Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.

Abstract: A heat dissipation system of a portable electronic device is provided. The heat dissipation system includes a body and at least one fan. A heat source of the portable electronic device is disposed in the body. The fan is a centrifugal fan disposed in the body. The fan has at least one flow inlet, at least one flow outlet, and at least one spacing portion. The flow outlet faces toward the heat source, and the spacing portion surrounds the flow inlet and abuts against the body, so as to isolate the flow inlet and the heat source in two spaces independent of each other in the body.

Abstract: An electronic device with auxiliary lighting function and an operation method thereof are provided. The electronic device includes a first body, a light-emitting module, and a processing module. The first body has a first surface. The light-emitting module is located on the first surface of the first body. The processing module is coupled to the light-emitting module, and is used to determine an operation of a first power supply mode or a second power supply mode according to a current power supply state. When the processing module is operated in the first power supply mode, the processing module dynamically adjusts an auxiliary illumination light provided by the light-emitting module according to a battery power. When the processing module is operated in the second power supply mode, the processing module dynamically adjusts the auxiliary illumination light provided by the light-emitting module according to a sensing result.

Abstract: A semiconductor device includes a fin structure, a two-dimensional (2D) material channel layer, a ferroelectric layer, and a metal layer. The fin structure extends from a substrate. The 2D material channel layer wraps around at least three sides of the fin structure. The ferroelectric layer wraps around at least three sides of the 2D material channel layer. The metal layer wraps around at least three sides of the ferroelectric layer.

Abstract: In an embodiment, a method includes forming a multi-layer stack including alternating layers of an isolation material and a semiconductor material, patterning the multi-layer stack to form a first channel structure in a first region of the multi-layer stack, where the first channel structure includes the semiconductor material, depositing a memory film layer over the first channel structure, etching a first trench extending through a second region of the multi-layer stack to form a first dummy bit line and a first dummy source line in the second region, where the first dummy bit line and first dummy source line each include the semiconductor material, and replacing the semiconductor material of the first dummy bit line and the first dummy source line with a conductive material to form a first bit line and a first source line.

Abstract: A method of forming a semiconductor memory device includes the following steps. First of all, a substrate is provided, and a plurality of gates is formed in the substrate, along a first direction. Next, a semiconductor layer is formed on the substrate, covering the gates, and a plug is then in the semiconductor layer, between two of the gates. Then, a deposition process is performed to from a stacked structure on the semiconductor layer. Finally, the stacked structure is patterned to form a plurality of bit lines, with one of the bit lines directly in contact with the plug.

Abstract: A semiconductor device includes a substrate, a first poly-material pattern, a first conductive element, a first semiconductor layer, and a first gate structure. The first poly-material pattern is over and protrudes outward from the substrate, wherein the first poly-material pattern includes a first active portion and a first poly-material portion joined to the first active portion. The first conductive element is over the substrate, wherein the first conductive element includes the first poly-material portion and a first metallic conductive portion covering at least one of a top surface and a sidewall of the first poly-material portion. The first semiconductor layer is over the substrate and covers the first active portion of the first poly-material pattern and the first conductive element. The first gate structure is over the first semiconductor layer located within the first active portion.

Abstract: The disclosure provides a data sharing system and a data sharing method. The data sharing system includes a storage device and a processor. The processor executes multiple modules stored by the storage device. When a first software as a service (SaaS) application program sends a data sharing request to a second SaaS application program, a mutual trust relationship service module receives a request for confirmation of a mutual trust relationship transmitted by the second SaaS application program, so as to confirm the mutual trust relationship. When the mutual trust relationship is confirmed, the mutual trust relationship service module obtains virtual user identification data from a tenant management service module, and provides the virtual user identification data to the second SaaS application program, so that the second SaaS application program obtains data authority, and shares specific data to the first SaaS application program.

Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.

Abstract: An image capturing device includes a casing, a camera assembly, an adjustment element, a first stopping structure and a second stopping structure. The camera assembly is disposed within the casing. A portion of the camera assembly is exposed outside the casing. The adjustment element is connected with the camera assembly, and rotatable relative to the casing. As the adjustment element is rotated, the camera assembly is correspondingly rotated. The adjustment element includes a contacting structure. The first stopping structure and the second stopping structure are arranged between the casing and the adjustment element and located at different positions. When the camera assembly is switched to a horizontal photographing mode, the contacting structure is positioned at the first stopping structure. When the camera assembly is switched to a vertical photographing mode, the contacting structure is positioned at the second stopping structure.

Abstract: In a method of manufacturing a semiconductor device, a gate space is formed by removing a sacrificial gate electrode, a gate dielectric layer is formed in the gate space, conductive layers are formed on the gate dielectric layer to fully fill the gate space, the gate dielectric layer and the conducive layers are recessed to form a recessed gate electrode, and a contact metal layer is formed on the recessed gate electrode. The recessed gate electrode does not includes tungsten, and the contact metal layer includes tungsten.

Abstract: A chemical mechanical polishing (CMP) apparatus is provided, including a polishing pad and a polishing head. The polishing pad has a polishing surface. The polishing head is configured to hold a wafer in contact with the polishing surface during the polishing process. The polishing head includes a retaining ring, at least one fluid channel, and a vacuum pump. The retaining ring is arranged along the periphery of the polishing head and configured to retain the wafer. The at least one fluid channel is provided inside the polishing head, wherein the retaining ring includes a bottom surface facing the polishing surface and a plurality of holes in fluid communication with the bottom surface and the at least one fluid channel. The vacuum pump is fluidly coupled to the at least one fluid channel.

Abstract: An image capturing device includes a casing, a camera assembly, an adjustment element, a first stopping structure and a second stopping structure. The camera assembly is disposed within the casing. A portion of the camera assembly is exposed outside the casing. The adjustment element is connected with the camera assembly, and rotatable relative to the casing. As the adjustment element is rotated, the camera assembly is correspondingly rotated. The adjustment element includes a contacting structure. The first stopping structure and the second stopping structure are arranged between the casing and the adjustment element and located at different positions. When the camera assembly is switched to a horizontal photographing mode, the contacting structure is positioned at the first stopping structure. When the camera assembly is switched to a vertical photographing mode, the contacting structure is positioned at the second stopping structure.