Abstract: A portable electronic device including a first body, a second body, a pivot element, a heat source, a first flexible heat conductive element, and a flip cover is provided. The pivot element is connected to the second body, and the second body is pivotally connected to the first body through the pivot element. The heat source is disposed in the first body. The first flexible heat conductive element is thermally coupled to the heat source and extends toward the pivot element from the heat source. The first flexible heat conductive element passes through the pivot element and extends into the inside of the second body and is thus thermally coupled to the second body. The flip cover is pivotally connected to the first body and located on a moving path of the pivot element.

Abstract: Provided are a gate structure and a method of forming the same. The gate structure includes a gate dielectric layer, a metal layer, and a cluster layer. The metal layer is disposed over the gate dielectric layer. The cluster layer is sandwiched between the metal layer and the gate dielectric layer, wherein the cluster layer at least includes an amorphous silicon layer, an amorphous carbon layer, or an amorphous germanium layer. In addition, a semiconductor device including the gate structure is provided.

Abstract: A ternary content addressable memory and a two-port SRAM are provided and include a storage cell and two transistors. The storage cell includes a first active region, a second active region, a third active region, and a fourth active region, extending along a first direction, and a first gate line, a second gate line, a third gate line, and a fourth gate line extending along a second direction. The first gate line crosses the third active region and the fourth active region, the second gate line crosses the fourth active region, the third gate line crosses the first active region, and the fourth gate line crosses the first active region and the second active region. The transistors are electrically connected to the storage cell, and the transistors and the storage cell are arranged along the first direction.

Abstract: A multi-loop cycling heat dissipation module including a first tank, a first pipe, a second tank, and a second pipe is provided. The first pipe is connected to the first tank to form a first loop, a first working fluid fills the first loop to transfer heat via phase transformation, and a first high-temperature section and a first low-temperature section are formed on the first pipe. The second pipe is connected to the second tank to form a second loop, a second working fluid fills the second loop to transfer heat via phase transformation, and a second high-temperature section and a second low-temperature section are formed on the second pipe. The first high-temperature section is in thermal contact with the second low-temperature section, and the first low-temperature section is in thermal contact with the second high-temperature section.

Abstract: A tool change unit includes a base and two tool arms rotatably mounted on the base and respectively located on two sides of the base. Each arm body includes a position-returning element, a gripping element, and an actuation element. The position-returning element enables the tool arm to rotate for upward and downward moving between a first position and a second position. The gripping element functions to grip a main-axle tool or a magazine tool. The tool change unit is combinable with a power unit to form a tool change device. The power unit drives the tool change unit to do rotation or rotation and upward and downward movement.

Abstract: A Hepatitis E virus (HEV)-based virus like nanoparticle (HEVNP) made with a modified capsid protein containing at least a portion of open reading frame 2 (ORF2) protein conjugated with gold nanocluster is provided. Also provided are methods of targeted delivery of a nucleic acid using the HEVNP.

Abstract: A dynamic voltage compensation circuit suitable for performing voltage compensation between an electronic device and a multimedia device, and includes a current detection unit, a calculation module and a voltage output unit. The current detection unit is configured to obtain the output current of the electronic device outputting the multimedia device from the bus power terminal. The calculation module is configured to receive the output current and an ideal reference voltage, execute a voltage compensation algorithm to calculate a predetermined output voltage based on the output current, the ideal reference voltage, and a compensation coefficient, and generate a control signal according to the predetermined output voltage. The voltage output unit is configured to receive a control signal, and is controlled by the control signal to generate a compensated output voltage and output it to a bus power terminal.

Abstract: A data processing method is proposed, including: sensing, via at least one sensing portion, target information of a target device; receiving and processing, via an electronic device, the target information of the sensing portion to form feature information; processing, via the electronic device, the feature information into a label matrix, and establishing, via an artificial intelligence training method, a target model based on the label matrix; and after the electronic device captures real-time information of the target device, predicting, via the target model, a life limit of the target device, wherein a content of the target information is corresponding to a content of the real-time information. Thus, a good target model is constituted and is advantageous in training artificial intelligence by processing the feature information into the label matrix.

Abstract: A semiconductor device including a cap layer and a method for forming the same are disclosed. In an embodiment, a method includes epitaxially growing a first semiconductor layer over an N-well; etching the first semiconductor layer to form a first recess; epitaxially growing a second semiconductor layer filling the first recess; etching the second semiconductor layer, the first semiconductor layer, and the N-well to form a first fin; forming a shallow trench isolation region adjacent the first fin; and forming a cap layer over the first fin, the cap layer contacting the second semiconductor layer, forming the cap layer including performing a pre-clean process to remove a native oxide from exposed surfaces of the second semiconductor layer; performing a sublimation process to produce a first precursor; and performing a deposition process wherein material from the first precursor is deposited on the second semiconductor layer to form the cap layer.

Abstract: Provided is an electronic device. The electronic device includes a housing, a heat generating element, a plurality of fans, and a guide structure. The housing includes a first outlet. The heat generating element is disposed in the housing. The fans are disposed in the housing. Each fan includes a second outlet. The second outlets at least partially face the interior of the housing. The guide structure is disposed in the housing, and is at least partially located between the fans. The guide structure at least partially extends toward the first outlet.

Abstract: A fan adapted for being disposed in an electronic device is provided. The fan includes a hub and a plurality of metal blades respectively extending from the hub. Each of the metal blades has a root portion connected to the hub and an end portion away from the hub, and a mass of the end portion is greater than a mass of the root portion, such that the metal blade is elongated while the fan is rotated.

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a front surface, a back surface opposite to the front surface, and a light-sensing region close to the front surface. The image sensor device includes an insulating layer covering the back surface and extending into the semiconductor substrate. The protection layer has a first refractive index, and the first refractive index is less than a second refractive index of the semiconductor substrate and greater than a third refractive index of the insulating layer, and the protection layer conformally and continuously covers the back surface and extends into the semiconductor substrate. The image sensor device includes a reflective structure surrounded by insulating layer in the semiconductor substrate.

Abstract: An opening is formed through a dielectric material layer to physically expose a top surface of a conductive material portion in, or over, a substrate. A metallic nitride liner is formed on a sidewall of the opening and on the top surface of the conductive material portion. A metallic adhesion layer including an alloy of copper and at least one transition metal that is not copper is formed on an inner sidewall of the metallic nitride liner. A copper fill material portion may be formed on an inner sidewall of the metallic adhesion layer. The metallic adhesion layer is thermally stable, and remains free of holes during subsequent thermal processes, which may include reflow of the copper fill material portion. An additional copper fill material portion may be optionally deposited after a reflow process.

Abstract: A tool for a bone implant includes a sleeve and a transmission rod including a transmission member disposed on an end of a shaft. Another end of the shaft is located outside of the sleeve. The transmission member is received in the sleeve and includes a first compartment and a plurality of first teeth surrounding the first compartment. A drilling rod includes a second compartment and a plurality of second teeth surrounding the second compartment. A coupling portion is disposed between the second compartment and a bit. The coupling portion is coupled with the sleeve. The bit is located outside of the sleeve. Two magnets are disposed in the first and second compartments, respectively. Two same poles respectively of the two magnets face each other.

Abstract: The present invention features a compound of formula I: or a pharmaceutically acceptable salt thereof, where R1, R2, R3, W, X, Y, Z, n, o, p, and q are defined herein, for the treatment of CFTR mediated diseases, such as cystic fibrosis. The present invention also features pharmaceutical compositions, method of treating, and kits thereof.

Abstract: An image processing chip includes a first interface port, a second interface port, a first upstream facing port (UFP) physical layer module, a first configuration channel detection module, a second upstream facing port (UFP) physical layer module, a second configuration channel detection module, a display signal processing module, a USB signal processing module, an image signal output port and a USB signal output port. The first configuration channel detection module is coupled to the first interface port through a first configuration channel pair, and configured to, after being communicated through a USB specification, detect a first configuration channel signal of a first input signal group to determine a signal type of the first input signal group, and control the first UFP physical layer module to output the first input signal group with a first signal configuration according to the signal type of the first input signal group.

Abstract: A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously.

Abstract: A fouling-proof structure is applicable to synthetic leather or fabric and it includes an alcohol-resistant layer; and a water-based fouling-proof layer disposed on the alcohol-resistant layer, wherein the alcohol-resistant layer is formed by curing an alcohol-resistant combination, and the alcohol-resistant combination comprises polyurethane resin, wherein the water-based fouling-proof layer is formed by curing a water-based fouling-proof combination, and the water-based fouling-proof combination comprises polyurethane resin, water, polymerized siloxanes, water-based PTFE and silicone oil.

Abstract: The present invention discloses a signal enhancement relay apparatus is provided. A display data channel stretching circuit includes a direct and an indirect channels. A snooper circuit is disposed at the direct channel. The indirect channel includes a master and a slave paths having a master and a slave transmission circuits disposed thereon. The direct channel is selected under a default passive mode such that a snooper link bridging handler circuit is enabled to monitor a display data transmission on the direct path through the snooper circuit, to perform a channel link bridging process corresponding to a data enhancement transmission channel accordingly.

Abstract: A method includes forming a first low-dimensional layer over an isolation layer, forming a first insulator over the first low-dimensional layer, forming a second low-dimensional layer over the first insulator, forming a second insulator over the second low-dimensional layer, and patterning the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator into a protruding fin. Remaining portions of the first low-dimensional layer, the first insulator, the second low-dimensional layer, and the second insulator form a first low-dimensional strip, a first insulator strip, a second low-dimensional strip, and a second insulator strip, respectively. A transistor is then formed based on the protruding fin.