Abstract: A method for forming an image sensor device is provided. The method includes providing a semiconductor substrate including a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The method includes forming an insulating layer over the back surface and in the first trench. A void is formed in the insulating layer in the first trench, and the void is closed. The method includes removing the insulating layer over the void to open up the void. The opened void forms a second trench partially in the first trench. The method includes filling a reflective structure in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.

Abstract: A method for forming a semiconductor device is provided. The method includes forming a gate stack to partially cover a semiconductor structure. The method also includes forming a first semiconductor material over the semiconductor structure. The method further includes forming a second semiconductor material over the first semiconductor material. In addition, the method includes forming a third semiconductor material over the second semiconductor material. The first semiconductor material and the third semiconductor material together surround the second semiconductor material. The second semiconductor material has a greater dopant concentration than that of the first semiconductor material or that of the third semiconductor material.

Abstract: An integrated semiconductor device includes a first semiconductor device, an ILD layer and a second semiconductor device. The first semiconductor device has a first transistor structure. The ILD layer is over the first semiconductor device and has a thickness in a range substantially from 10 nm to 100 nm. The second semiconductor device is over the ILD layer and has a 2D material layer as a channel layer of a second transistor structure thereof.

Abstract: In one embodiment, a system comprising a battery set comprising plural battery cells configured in a circuit; and a control system configured to switch current flow in the circuit from bi-directional flow to and from the battery set to mono-directional flow to or from the battery set based on an over-charging or over-discharging condition.

Abstract: A method, apparatus, and stored instructions are provided for transforming a query representation by unnesting a predicate condition that is based on whether or not a result exists for a subquery of the predicate condition. An initial query representation is received. The initial query representation represents an initial query that includes an EXISTS-equivalent predicate or a NOT-EXISTS-equivalent predicate and at least one other predicate in a disjunction. The initial query representation is transformed into a semantically equivalent transformed query representation that represents a transformed query. The transformed query includes, instead of the EXISTS-equivalent predicate or a NOT-EXISTS-equivalent predicate, a join operator that references the data object.

Abstract: A memory includes: a dielectric fin formed over a substrate; and a pair of memory cells disposed along respective sidewalls of the dielectric fin, each of the pair of memory cells comprising: a first conductor layer; a selector layer; a resistive material layer; and a second conductor layer, wherein the first conductor layer, selector layer, resistive material layer, and second conductor layer each includes upper and lower boundaries, and at least one of the upper and lower boundaries is tilted away from one of the sidewalls of the dielectric fin by an angle.

Abstract: A signal processing method includes: driving multiple backlight zones to emit respectively; detecting multiple first luminance values corresponding to the backlight zones when each of the backlight zones emits; calculating a diffusion matrix according to the first luminance values; obtaining multiple first correction signals corresponding to the backlight zones according to the diffusion matrix and multiple target luminance values corresponding to the backlight zones; and controlling the backlight zones to display according to the first correction signals respectively.

Abstract: A garbage collection method for a data storage device includes steps of: entering a background mode from a foreground mode; selecting a plurality of source data blocks from a plurality of in-use data blocks; dividing a mapping table into a plurality of sub-mapping tables and selecting one of the sub-mapping tables as a target sub-mapping table, wherein the target sub-mapping table is used to manage one of the source data blocks; selecting a destination data block from a plurality of spare data blocks; and sequentially updating a correspondence relationship of data stored in the target sub-mapping table from the source data blocks to the destination data block, wherein the updating comprises copying the data stored in the source data blocks to the destination data block.

Abstract: A random code generator includes a differential cell array, a power supply circuit, a first selecting circuit and a current judgment circuit. The power supply circuit receives an enrolling signal and a feedback signal. The first selecting circuit receives a first selecting signal. When the enrolling signal is activated and an enrollment is performed on the first differential cell, the power supply circuit provides an enrolling voltage, and the enrolling voltage is transmitted to a first storage element and a second storage element of the first differential cell through the first selecting circuit. Consequently, the cell current is generated. When a magnitude of the cell current is higher than a specified current value, the current judgment circuit activates the feedback signal, so that the power supply circuit stops providing the enrolling voltage.

Abstract: A semiconductor device includes a gate structure on a substrate, in which the gate structure includes a silicon layer on the substrate, a titanium nitride (TiN) layer on the silicon layer, a titanium (Ti) layer between the TiN layer and the silicon layer, a metal silicide between the Ti layer and the silicon layer, a titanium silicon nitride (TiSiN) layer on the TiN layer, and a conductive layer on the TiSiN layer.

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process.

Abstract: An electrical connector with a contact module includes an insulative body, a plurality of contacts retained to the body, and a grounding bar embedded within the body. The contacts include a plurality of differential pair contacts and a plurality of grounding contacts. The ground bar forms a plurality of spring tangs. The body forms a plurality of cavities and the corresponding spring tangs of the grounding bar extend into the corresponding cavities to contact the corresponding grounding contacts. Conductive adhesive is filled within each cavity and solidified to secure all the spring tang, the corresponding grounding contact and the body together. The electrical connector is formed by a pair of contact modules back to back secured to together by an insulative case either by assembling or via an over-molding process. The cavities and the corresponding conductive adhesive of each contact module is hidden from the exterior.

Abstract: A serial general purpose input/output system includes a transmitter, a cable, a receiver and a verification unit. The transmitter includes an encoder to perform cyclic redundancy check coding on a data to generate a cyclic redundancy check code for verifying the accuracy of the data, and a first serial general purpose input/output connector coupled to the encoder to transmit the data and the cyclic redundancy check code. The receiver includes a second serial general purpose input/output connector coupled to the first serial general purpose input/output connector by the serial general purpose input/output cable to receive the data and the cyclic redundancy check code from the first serial general purpose input/output connector.

Abstract: The present invention relates to a slowly degraded alloy and a method for producing the same. The slowly degraded alloy comprises a degradable metal and a cladding layer. The degradable metal is completely covered with the cladding layer, such that a degradation rate of the degradable metal is decreased. Furthermore, because the cladding layer is made from polymer materials, the cladding layer does not be broken easily when a stress is applied to the slowly degraded alloy, thereby efficiently covering the degradable metal therein, and lowering the degradation rate of the degradable metal.

Abstract: A control method for network communication system including base station network management server comprises of obtaining an item of neighbor base station identification information of a neighbor base station by a first base station; providing the first base station identification information to a base station network management server by the first base station; obtaining a first base station neighbor information from the base station network management server by a first MEC platform; producing an item of first platform neighbor information by the first MEC platform; determining whether a request signal matches the first platform neighbor information after receiving the request signal from a second MEC platform; providing the first platform identification information to the second MEC platform while determining that the request signal matches the first platform neighbor information.

Abstract: A heat dissipation fan suited for being assembled in an electronic device is provided. The heat dissipation fan includes a hub and a plurality of fan blades disposed at and surrounding the hub. The fan blade has ductility and flexibility, and any two fan blades next to each other are in different thickness.

Abstract: A memory cell includes: a first electrode contact formed as a cylinder shape that extends along a first direction; a resistive material layer comprising a first portion that extends along the first direction and surrounds the first electrode contact; and a second electrode contact coupled to the resistive material layer, wherein the second electrode contact surrounds the first electrode contact and the first portion of the resistive material layer.

Abstract: A semiconductor device comprises a first chip bonded on a second chip. The first chip comprises a first substrate and first interconnection components formed in first IMD layers. The second chip comprises a second substrate and second interconnection components formed in second IMD layers. The device further comprises a first conductive plug formed within the first substrate and the first IMD layers, wherein the first conductive plug is coupled to a first interconnection component and a second conductive plug formed through the first substrate and the first IMD layers and formed partially through the second IMD layers, wherein the second conductive plug is coupled to a second interconnection component.

Abstract: A fan blade includes an arch-shaped body, a connecting portion, at least one sheet and at least one reinforcement component. The arch-shaped body has a pressure bearing surface and a negative pressure surface opposite to the pressure bearing surface. The connecting portion is connected to a first end portion of the arch-shaped main body. The sheet is connected to the pressure bearing surface or the negative pressure surface. The reinforcement component is connected to the pressure bearing surface. An orthogonal projection of the sheet on the arch-shaped body and an orthogonal projection of the reinforcement component on the arch-shaped body are not overlapped with each other. A fan is also provided.

Abstract: A heat dissipation module including a chamber, a first cooling fin, and a barrier part is provided. The chamber has an accommodating space, at least one inlet, and at least one outlet. The at least one inlet is disposed in a first side wall of the chamber and communicates with the accommodating space. The at least one outlet is disposed in a second side wall of the chamber away from the at least one inlet and communicates with the accommodating space. The first cooling fin is disposed in the accommodating space. The first cooling fin has a guiding surface which extends obliquely upward. The barrier part is disposed outside the guiding surface of the first cooling fin and has at least one through hole.