Abstract: A flicker-free linear LED drive circuit is disclosed. The flicker-free linear LED drive circuit converts the input voltage of the external power supply to form an output current to the LED. The flicker-free linear LED drive circuit includes a measuring module, a regulating module and a rectifier module. The flicker-free linear LED drive circuit is characterized in that the measuring module is configured to measure the phase angle of the input voltage after full-wave rectification; the regulating module is used to form the complex voltage signal according to the measurement signal in the voltage waveform of the regulating module for the half-wave period, the conduction angle range formed at the fixed power is used as the basis for electrical conduction in the half-wave period of the input voltage.

Abstract: A flash memory controller for controlling a flash memory module includes a communication interface for receiving a first data and a second data; and a processing circuit for dynamically controlling a data writing mode of the flash memory module according to an amount of stored data in the flash memory module. If the amount of stored data in the flash memory module is less than a first threshold when the communication interface receives the first data, the processing circuit controls the flash memory module so that the first data is written into the first data block under an one-bit-per-cell mode. If the amount of stored data in the flash memory module is greater than the first threshold when the communication interface receives the second data, the processing circuit controls the flash memory module so that the second data is written into the second data block under a two-bit-per-cell mode.

Abstract: A training or rating system includes a shape sensing enabled device (104) and a database (140) of possible shapes and sequences of shapes for the shape sensing enabled device. The possible shapes and sequences of shapes include a collection of poses derived by appropriately performing a procedure with the shape sensing enabled device. A comparison module (154) is configured to compare real-time poses of the shape sensing enabled device with the collection of poses in the database to output comparison feedback for a user of the shape sensing enabled device.

Abstract: A method of fabricating a semiconductor device includes forming a fin structure on a substrate, forming a channel layer on a sidewall and a top surface of the fin structure, and forming a gate stack over the channel layer. The channel layer includes a two-dimensional (2D) material. The gate stack includes a ferroelectric layer.

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a first side, a second side opposite to the first side, and at least one light-sensing region close to the first side. The image sensor device includes a dielectric feature covering the second side and extending into the semiconductor substrate. The dielectric feature in the semiconductor substrate surrounds the light-sensing region. The image sensor device includes a reflective layer in the dielectric feature in the semiconductor substrate, wherein a top portion of the reflective layer protrudes away from the second side, and a top surface of the reflective layer and a top surface of the insulating layer are substantially coplanar.

Abstract: A method for testing a semiconductor structure includes forming a dielectric layer over a test region of a substrate. A cap layer is formed over the dielectric layer. The dielectric layer and the cap layer are annealed. The annealed cap layer is removed. A ferroelectricity of the annealed dielectric layer is in-line tested.

Abstract: A method comprises providing a semiconductor alloy layer on a semiconductor substrate, forming a gate structure on the semiconductor alloy layer, forming source and drain regions in the semiconductor substrate on both sides of the gate structure, removing at least a portion of the semiconductor alloy layer overlying the source and drain regions, and forming a metal silicide region over the source and drain regions.

Abstract: A signal processing method includes: driving multiple backlight zones to emit respectively; detecting multiple first luminance values corresponding to the backlight zones when each of the backlight zones emits; calculating a diffusion matrix according to the first luminance values; obtaining multiple first correction signals corresponding to the backlight zones according to the diffusion matrix and multiple target luminance values corresponding to the backlight zones; and controlling the backlight zones to display according to the first correction signals respectively.

Abstract: A gaming device includes a self-stabilizing module including a first portion and a second portion, a controller assembly disposed at the second portion, a motion sensor, an operation processing module, and a display screen disposed at the first portion. The operation processing module generates a frame signal to the display screen according to a program. The controller assembly and the second portion rotate about at least one self-stabilizing axis relative to the first portion when the self-stabilizing module is activated. The motion sensor generates a control signal due to the relative rotation of the first and second portions. The operation processing module generates another frame signal corresponding to a movement posture of the controller assembly relative to the display screen according to the control signal and the program. The display screen is not located on a movement track of the controller assembly. A gaming controller is also provided.

Abstract: A gaming device including a self-stabilizing module with at least two self-stabilizing axes, a display assembled to the self-stabilizing module, a controller assembly assembled to the self-stabilizing module, a motion sensor, and a processing module is provided. A relative movement of the controller assembly and the display are generated via at least one self-stabilizing axis of the self-stabilizing module. The processing module generates a frame signal to transfer to the display according to a program. When the self-stabilizing module is activated and the relative movement is generated, the motion sensor generates a control signal to the processing module, and the processing module generate another frame signal, which correspondingly depicts a posture of the controller assembly relative to the display, to transfer to the display according to the control signal and the program. A gaming controller is also provided.

Abstract: An underwater ultrasonic device includes at least one first ultrasonic transducer and at least one second ultrasonic transducer. The first ultrasonic transducer is configured to transmit a plurality of ultrasonic signals and the second ultrasonic transducer is configured to receive a plurality of reflected signals of the ultrasonic signals. The first ultrasonic transducer and the second ultrasonic transducer are disposed with respect to each other. One of the first ultrasonic transducer and the second ultrasonic transducer is curvilinear and another one of the first ultrasonic transducer and the second ultrasonic transducer is curvilinear or straight linear.

Abstract: A compute node, a failure detection method thereof and a cloud data processing system are provided. The method is adapted to the cloud data processing system having a plurality of compute nodes and at least one management node, and includes following steps: performing a self-inspection on operating statuses of services being provided and resource usage statuses, and reporting an inspection result to the management node by each compute node; dynamically adjusting a time interval of a next report and informing the management node of the time interval by the compute node; and checking a report condition of the inspection result according to the time interval by the management node, so as to determine whether the compute node fails.

Abstract: Generally, the present disclosure provides example embodiments relating to conductive features, such as metal contacts, vias, lines, etc., and methods for forming those conductive features. In a method embodiment, a dielectric layer is formed on a semiconductor substrate. The semiconductor substrate has a source/drain region. An opening is formed through the dielectric layer to the source/drain region. A silicide region is formed on the source/drain region and a barrier layer is formed in the opening along sidewalls of the dielectric layer by a same Plasma-Enhance Chemical Vapor Deposition (PECVD) process.

Abstract: A method for fabricating semiconductor device includes the steps of first forming a silicon layer on a substrate and then forming a metal silicon nitride layer on the silicon layer, in which the metal silicon nitride layer includes a bottom portion, a middle portion, and a top portion and a concentration of silicon in the top portion is greater than a concentration of silicon in the middle portion. Next, a conductive layer is formed on the metal silicon nitride layer and the conductive layer, the metal silicon nitride layer, and the silicon layer are patterned to form a gate structure.

Abstract: An apparatus and a method for monitoring the relative relationship between the wafer and the chuck is provided, especially for monitoring whether the wafer is sticky on the chuck when the wafer is de-chucked. The lift pins may be extended outside the chuck to separate the wafer and the chuck when the wafer is de-chucked. By detecting the capacitance between the de-chucked wafer and the chuck, especially by comparing the detected capacitance with the capacitance that the wafer is held by the chuck, one may determine whether the wafer is sticky on the chuck, or even whether the wafer is properly supported by the lift pins. Accordingly, an early alarm may be issued if the wafer is sticky or improperly removed. Besides, by controlling a switch electrically connected to a lift pin that contacted the wafer, the charges at the wafer may be eliminated.

Abstract: A display substrate, a display device and a display method thereof, and a mask plate are provided. The display substrate includes: a plurality of pixel unit groups arranged in rows, each of the pixel unit groups including: a first-color sub-pixel unit, and a ring-shaped second-color sub-pixel unit surrounding the first-color sub-pixel unit.

Abstract: In one embodiment, a system comprising a battery set comprising plural battery cells configured in a circuit; and a control system configured to switch current flow in the circuit from bi-directional flow to and from the battery set to mono-directional flow to or from the battery set based on an over-charging or over-discharging condition.

Abstract: A fan failure backup apparatus includes a first fan module and a second fan module. When a second control unit of the second fan module realizes that the first fan module is failed through a first control unit of the first fan module, and the second control unit realizes that the second fan module is not failed, the second control unit controls the second fan module to additionally enhance a pressure-flow characteristic of a second fan unit of the second fan module.

Abstract: A memory cell includes: a first electrode contact formed as a cylinder shape that extends along a first direction; a resistive material layer comprising a first portion that extends along the first direction and surrounds the first electrode contact; and a second electrode contact coupled to the resistive material layer, wherein the second electrode contact surrounds the first electrode contact and the first portion of the resistive material layer.

Abstract: A semiconductor device comprises a first chip bonded on a second chip. The first chip comprises a first substrate and first interconnection components formed in first IMD layers. The second chip comprises a second substrate and second interconnection components formed in second IMD layers. The device further comprises a first conductive plug formed within the first substrate and the first IMD layers, wherein the first conductive plug is coupled to a first interconnection component and a second conductive plug formed through the first substrate and the first IMD layers and formed partially through the second IMD layers, wherein the second conductive plug is coupled to a second interconnection component.