Abstract: A cell and a method and a system for bandwidth management of a backhaul network of the cell, adapted for arranging a routing path of a bearer established between a user equipment and a serving gateway through the cell in the backhaul network, are provided. In the method, the cell connects the user equipment to establish the bearer between the user equipment and the serving gateway or change an established bearer. The cell sets a packet label on the data packets of the bearer and transmits the packet label and bandwidth management information of the bearer to a controller of the backhaul network for the controller to arrange the routing path of the data packets using the packet label in the backhaul network according to the bandwidth management information.

Abstract: Provided is a micro-electro-mechanical system (MEMS) chip package, including a circuit substrate, a MEMS chip, a driving chip, a cover, an insulator, and at least one first pad. The circuit substrate has a first surface and a second surface opposite to each other. The circuit substrate has a sound port passing through the first surface and the second surface. The MEMS chip is disposed on the first surface of the circuit substrate. The driving chip is electrically connected to the MEMS chip. The cover is disposed on the first surface of the circuit substrate. The cover covers the MEMS chip and the driving chip. The insulator covers the cover. The first pad is electrically connected to the driving chip by a first electrical path.

Abstract: In one embodiment, a method comprising causing motion of an enclosed container comprising substrate material and graphite material within the container; and coating surfaces of the substrate material with the graphite material responsive to the motion of the container, the coated surfaces comprising graphene or graphene layers.

Abstract: According to an exemplary embodiment, a method of forming a MIM capacitor is provided. The method includes the following operations: providing a first metal layer; providing a dielectric layer over the first metal layer; providing a second metal layer over the dielectric layer; etching the second metal layer to define the metal-insulator-metal capacitor; and oxidizing a sidewall of the second metal layer. According to an exemplary embodiment, a MIM capacitor is provided. The MIM capacitor includes a first metal layer; a dielectric layer over the first metal layer; a second metal layer over the dielectric layer; and an oxidized portion in proximity to the second metal layer and made of oxidized second metal layer.

Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.

Abstract: A receiving circuit for a digital television is provided. The receiving circuit of the digital television, adapted to process a digital television signal to generate transmission data, includes: a front-end circuit, configured to process the digital television signal to generate an interleaved signal; a setting unit, configured to provide a setting value associated with a digital video standard of the digital television signal; a frequency de-interleaving and time de-interleaving circuit, configured to select a frequency de-interleaving scheme and a time de-interleaving scheme corresponding to different digital video standards according to the setting value, and to process the interleaved signal to generate a de-interleaved signal; a quadrature amplitude modulation (QAM) demapping circuit, configured to demap the de-interleaved signal to generate a demapped signal; and a decoder, configured to decode the demapped signal to generate the transmission data.

Abstract: A communication network system, a calling terminal and a voice call establishing method thereof are provided. The communication network system comprises a called terminal, the calling terminal and a session initiation protocol (SIP) server. The calling terminal generates and transmits an invite message including IPv4 connection information and IPv6 connection information of the calling terminal. The SIP server is communicatively connected to the calling terminal and the called terminal. The SIP server receives the invite message from the calling terminal and forwards the invite message to the called terminal. The called terminal establishes a voice call with the calling terminal according to one of the IPv4 connection information and the IPv6 connection information of the calling terminal.

Abstract: A magnetic resonance imaging scan using a MR scanner receives via a user interface a MR imaging protocol categorizable into a MR scan type of a predefined set of MR scan types. Further, a database is queried by providing to the database scan information permitting the database to identify the MR scan type of the MR imaging protocol. Statistical information on the MR scan type which can include statistics on modifications of individual scan parameters of the MR scan type is received from a database, and the statistical information is provided to the user interface. Modifications of the MR imaging protocol can be received from the user interface, resulting in a modified MR imaging protocol, according to which the MR imaging scan can be performed.

Abstract: A method of forming a contact structure is provided. A silicon-containing substrate is provided with a composite dielectric layer formed thereon. An opening penetrates through the composite dielectric layer and exposes a portion of the source/drain region. A titanium nitride layer is formed in the opening, and the titanium nitride layer is in contact with the exposed portion of the source/drain region. The titanium nitride layer is annealed, so that the bottom portion of the titanium nitride layer is partially transformed into a titanium silicide layer. A conductive layer is formed to fill up the opening.

Abstract: Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.

Abstract: A semiconductor device includes an active layer, a source electrode, a drain electrode, a gate electrode, an interlayer dielectric, an inter-source layer, an inter-source plug, an inter-drain layer, an inter-drain plug, an inter-gate layer, and an inter-gate plug. The active layer is made of III-V group semiconductors. The source electrode, the drain electrode, and the gate electrode are disposed on the active layer. The gate electrode is disposed between the source electrode and the drain electrode. The interlayer dielectric covers the source electrode, the drain electrode, and the gate electrode. The inter-source layer, the inter-drain layer, and the inter-gate layer are disposed on the interlayer dielectric. The inter-source plug is electrically connected to the source electrode and the inter-source layer. The inter-drain plug is electrically connected to the drain electrode and the inter-drain layer. The inter-gate plug is electrically connected to the gate electrode and the inter-gate layer.

Abstract: The present invention provides a rapid screening device for brain disease to diagnose a patient's disease of cranial nerves by the states of the patient's eyeball. The rapid screening device for brain disease comprises a sensing unit, a processing unit and a carrier. The sensing unit can capture an image of the patient's eyeball. The sensing unit outputs an image signal of the eyeball, wherein the image of at least one eyeball can be resolved from the image signal of the eyeball. The processing unit is connected to the sensing unit. The processing unit retrieves a plurality of images from the sensing unit within a predetermined time interval, and the processing unit executes an algorithm to generate a calculated result by the images of the image signals of the eyeball. The carrier is provided with the sensing unit and the processing unit, wherein the calculated result is used to diagnose or predict that the disease happens to the patient.

Abstract: A receptacle connector includes an insulative housing defining a base and a mating tongue, with a widen and thicken step structure around a root thereof adjacent to the base; two rows of contacts disposed in the insulating housing with contacting sections exposed upon the mating tongue and mount tails out of the base; a metallic shield surrounding the mating tongue so as to define a mating cavity; and a metallic bracket attached the shield. The first wall of the shield defines a pair of spring tangs split therefrom and extending rearwards into the mating cavity, the second wall defines a pair of dimples protruding inwards the mating cavity for holding the plug connector. The bracket covers spring tangs and seals any opens defined on the first wall for keeping integrity therewith under EMI consideration.

Abstract: The present disclosure relates to a semiconductor process, which includes: (a) providing a semiconductor element; (b) attaching the semiconductor element to a carrier by an adhesive layer, so that the adhesive layer is sandwiched between the semiconductor element and the carrier; and (c) cutting the semiconductor element to form a plurality of semiconductor units. Thereby, the gaps between the semiconductor units are fixed after the cutting process, so as to facilitate testing the semiconductor units.

Abstract: A plug connector includes a connector body defining a rear cable supporting platform with opposite first and second surfaces, a plurality of terminals and a cable. The terminal includes a pair of USB 2.0 signal soldering legs, a grounding and power soldering legs exposed to the first surface of the supporting platform and a detecting soldering leg, an additional power and grounding soldering legs exposed to the second surface. Wires of the cable consist of a pair of USB 2.0 signal wires, a power wire, a grounding wire welded with corresponding soldering legs on the first surface. The second surface of the supporting platform is further located with a SMT type resistor with a first leg and a second leg, the first leg is connected with the detecting soldering leg, the second leg is connected with the additional power soldering leg or the additional grounding soldering leg.

Abstract: A method includes forming a first implantation mask comprising a first opening, implanting a first portion of a semiconductor substrate through the first opening to form a first doped region, forming a second implantation mask comprising a second opening, and implanting a second portion of the semiconductor substrate to form a second doped region. The first portion of the semiconductor substrate is encircled by the second portion of the semiconductor substrate. A surface layer of the semiconductor substrate is implanted to form a third doped region of an opposite conductivity type than the first and the second doped regions. The third doped region forms a diode with the first and the second doped regions.

Abstract: The present disclosure relates to a mask and a method for manufacturing a display panel. The mask includes: a body provided with a plurality of openings for defining pixel patterns and partition areas each of which is located among adjacent openings; and at least partition member provided on the partition areas. Using the mask and manufacturing provided by the present disclosure, pixel color mixing can be reduced.

Abstract: An integrated circuit (IC) using a copper-alloy based hybrid bond is provided. The IC comprises a pair of semiconductor structures vertically stacked upon one another. The pair of semiconductor structures comprise corresponding dielectric layers and corresponding metal features arranged in the dielectric layers. The metal features comprise a copper alloy having copper and a secondary metal. The IC further comprises a hybrid bond arranged at an interface between the semiconductor structures. The hybrid bond comprises a first bond bonding the dielectric layers together and a second bond bonding the metal features together. The second bond comprises voids arranged between copper grains of the metal features and filled by the secondary metal. A method for bonding a pair of semiconductor structures together using the copper-alloy based hybrid bond is also provided.

Abstract: A method for naming an image file comprises the steps of: searching for a keyword string in initial scan image data; identifying an encoded string after the keyword string; and generating an initial file corresponding to the initial scan image data. If the keyword string is found, a file name of the initial file is automatically set up according to the encoded string.

Abstract: In one implementation, a housing has a first surface and a second surface. A first side may be between the first surface and the second surface. An input device on may be on the first surface. A sensor on the first side may generate data representing an object detected by the sensor. A controller may process the data and control movement of the cursor on a display when the controller determines that the object is in the shape of a hand in a grip form.