Abstract: A method includes obtaining image data for a patient. The image data corresponds to acquisition data from an imaging acquisition from a set of planned image acquisitions in an examination plan for the patient. The method further includes analyzing the image data with a processor based on an imaging practice guideline and producing electronically formatted data indicative of the analysis. The processor generates a signal indicative of a recommendation of a change to the examination plan based on the data indicative of the analysis.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a semiconductor substrate. The dielectric layer has a first recess. The method includes forming a first conductive material layer over an inner wall and a bottom of the first recess. The first conductive material layer is partially filled in the first recess. The method includes performing a reflow process to convert the first conductive material layer into a first conductive layer. The first conductive layer has a second recess in the first recess. The method includes performing an electroplating process or an electroless plating process to form a second conductive layer over the first conductive layer so as to fill the second recess.

Abstract: The present invention features a compound of formula I: or a pharmaceutically acceptable salt thereof, where R1, R2, R3, W, X, Y, Z, n, o, p, and q are defined herein, for the treatment of CFTR mediated diseases, such as cystic fibrosis. The present invention also features pharmaceutical compositions, method of treating, and kits thereof.

Abstract: An electrical connector has a mating cavity opening forwardly. The electrical connector has a main body, a terminal module and a sealing member. The terminal module has an insulator and a plurality of conductive terminals received therein. The conductive terminals have contacting portions exposed into the mating cavity and connecting legs. The terminal module is received in the main body. The sealing member is filled in a gap between the terminal module and main body to seal the gap.

Abstract: A beam splitter contains: a body, a main reflection portion, a sub reflection portion, and a refraction portion. The body includes an inlet and an outlet. The main reflection portion is located on a first side of the body, and the main reflection portion and the outlet have a first rotating angle and a second rotating angle respectively so that the main reflection portion reflects an external beam to produce a main beam. The sub reflection portion is located on the first side of the body, and the sub reflection portion reflects the external beam to produce a sub beam. The refraction portion is located on a second side of the body and has a third rotating angle different from the inlet, the sub beam projects out of the refraction portion to produce a deflective projection angle of the sub beam.

Abstract: The present disclosure relates to a multi-dimensional integrated chip having a redistribution layer vertically extending between integrated chip die, which is laterally offset from a back-side bond pad. The multi-dimensional integrated chip has a first integrated chip die with a first plurality of metal interconnect layers disposed within a first inter-level dielectric layer arranged onto a front-side of a first semiconductor substrate. The multi-dimensional integrated chip also has a second integrated chip die with a second plurality of metal interconnect layers disposed within a second inter-level dielectric layer abutting the first ILD layer. A bond pad is disposed within a recess extending through the second semiconductor substrate. A redistribution layer vertically extends between the first plurality of metal interconnect layers and the second plurality of metal interconnect layers at a position that is laterally offset from the bond pad.

Abstract: A semiconductor structure includes a semiconductive substrate including a first surface and a second surface opposite to the first surface, a shallow trench isolation (STI) including a first portion at least partially disposed within the semiconductive substrate and tapered from the first surface towards the second surface, and a second portion disposed inside the semiconductive substrate, coupled with the first portion and extended from the first portion towards the second surface, and a void enclosed by the STI, wherein the void is at least partially disposed within the second portion of the STI.

Abstract: An electronic device including: an inner housing portion and an outer housing portion, the inner housing portion having a cavity, the outer housing portion having an opening; and an antenna assembly including a substrate accommodated in the cavity, a ground element on the substrate, a conductive adhesive portion on the ground element and affixed to the outer housing portion, and a positioning portion on the substrate and received in the opening.

Abstract: A beam splitter contains: a body, a main reflection portion, a sub reflection portion, and a refraction portion. The body includes an inlet and an outlet. The main reflection portion is located on a first side of the body, and the main reflection portion and the outlet have a first rotating angle and a second rotating angle respectively so that the main reflection portion reflects an external beam to produce a main beam. The sub reflection portion is located on the first side of the body, and the sub reflection portion reflects the external beam to produce a sub beam. The refraction portion is located on a second side of the body and has a third rotating angle different from the inlet, the sub beam projects out of the refraction portion to produce a deflective projection angle of the sub beam.

Abstract: An acetabular cup structure of the present invention includes a ball-and-socket prosthesis and a liner, where a ball wall of the ball-and-socket prosthesis has a groove formed by connecting at least two continuous straight lines, and the groove connects an outer surface of the ball wall to an inner surface of the ball wall, so that an expandable sheet is formed between the groove formed by connecting the at least two continuous straight lines and having an angle there-between and two ends of the groove that are not connected, and the liner, for connecting a femoral stem, is tightly attached to the inner surface of the ball wall, and when the liner is tightly attached to the inner surface of the ball wall, the liner presses the sheet and extends to the groove, so that the liner is attached to the ball-and-socket prosthesis more tightly.

Abstract: A method for detecting data stream synchronization includes receiving a first data stream, verifying a first data sequence corresponding to a first data sequence field, generating a first flag of successful synchronization verification when the first data sequence is successfully verified, verifying a second data sequence corresponding to a second data sequence field, and generating a second flag of successful synchronization verification when the second data sequence is successfully verified.

Abstract: A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlxGa1-xN (0<x<1) while the stress control layer is made from AlxInyGa1-x-yN (0<x<1, 0<y<1, 0<x+y<1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.

Abstract: A power supply system using an energy storage cell includes at least one lithium cell module; a voltage balance device, received and built in the lithium cell module, for performing voltage balance; and a cell module voltage monitoring device, disposed between a load and the lithium cell module, for monitoring and controlling working voltage ranges of all the lithium cell modules. The voltage balance device built in each lithium cell module performs charging correction on a lithium cell unit in which a capacitance difference is caused by a fabrication process or caused subsequently, to prevent overcharge damage of the lithium cell unit caused by the capacitance difference. The cell module voltage monitoring device is provided on an external line, and only a correct total charge voltage needs to be provided to charge the lithium cell module.

Abstract: The present invention provides an electrolyte for surface treatment of a metal implant including 10-30 wt % of a sulfur-containing compound aqueous solution, 3-10 wt % of a phosphorous-containing compound aqueous solution, 0.5-2 wt % of an oxidant aqueous solution, and 0.5-5 wt % of a surfactant aqueous solution, with the rest being water. The concentration of the sulfur-containing compound aqueous solution is 0.1-3 M. The concentration of the phosphorous-containing compound aqueous solution is 0.05-2 M. The concentration of the oxidant aqueous solution is 0.05-1 M. The concentration of the surfactant aqueous solution is 0.05-5 M. As such, it is able to utilize the electrolyte for treating a surface of a metal implant, forming a porous oxide layer on the surface of the metal implant.

Abstract: A semiconductor process for forming a plug includes the following steps. A dielectric layer having a recess is formed on a substrate. A titanium layer is formed to conformally cover the recess. A first titanium nitride layer is formed to conformally cover the titanium layer, thereby the first titanium nitride layer having first sidewall parts. The first sidewall parts of the first titanium nitride layer are pulled back, thereby second sidewall parts being formed. A second titanium nitride layer is formed to cover the recess. Moreover, a semiconductor structure formed by said semiconductor process is also provided.

Abstract: BSI image sensors and methods. In an embodiment, a substrate is provided having a sensor array and a periphery region and having a front side and a back side surface; a bottom anti-reflective coating (BARC) is formed over the back side to a first thickness, over the sensor array region and the periphery region; forming a first dielectric layer over the BARC; a metal shield is formed; selectively removing the metal shield from over the sensor array region; selectively removing the first dielectric layer from over the sensor array region, wherein a portion of the first thickness of the BARC is also removed and a remainder of the first thickness of the BARC remains during the process of selectively removing the first dielectric layer; forming a second dielectric layer over the remainder of the BARC and over the metal shield; and forming a passivation layer over the second dielectric layer.

Abstract: An LED spherical lamp includes a base, a power supply unit, a substrate and a cover. The power supply unit is installed inside the base, and the substrate has plural LED light emitting elements and is coupled to a side of the base, and the cover is fixed to the base for covering the substrate. The LED spherical lamp includes an electrical connector installed to the substrate and having a plurality of electrical terminals for electrically connecting the substrate to the power supply unit, and an engaging slot is concavely formed on a side of the electrical connector, such that the power supply unit drives the LED light emitting elements to achieve the lighting effect. The LED spherical lamp has the effects of simplifying the assembling and manufacturing procedure, assuring the electrical conduction of components, and facilitating the maintenance, repair, and replacement of the components.

Abstract: A method comprises providing a semiconductor alloy layer on a semiconductor substrate, forming a gate structure on the semiconductor alloy layer, forming source and drain regions in the semiconductor substrate on both sides of the gate structure, removing at least a portion of the semiconductor alloy layer overlying the source and drain regions, and forming a metal silicide region over the source and drain regions.

Abstract: A method for fabricating a semiconductor device with improved bonding ability is disclosed. The method comprises providing a substrate having a front surface and a back surface; forming one or more sensor elements on the front surface of the substrate; forming one or more metallization layers over the front surface of the substrate, wherein forming a first metallization layer comprises forming a first conductive layer over the front surface of the substrate; removing the first conductive layer from a first region of the substrate; forming a second conductive layer over the front surface of the substrate; and removing portions of the second conductive layer from the first region and a second region of the substrate, wherein the first metallization layer in the first region comprises the second conductive layer and the first metallization layer in the second region comprises the first conductive layer and the second conductive layer.