Abstract: A semiconductor device includes an isolation feature in a substrate. The semiconductor device further includes a first source/drain feature in the substrate, wherein a first side of the first source/drain feature contacts the isolation feature, and the first source/drain feature exposes a portion of the isolation feature below a top surface of the substrate. The semiconductor device further includes a silicide layer over the first source/drain feature. The semiconductor device further includes a dielectric layer along the exposed portion of the isolation feature below the top surface of the substrate, wherein the dielectric layer contacts the silicide layer. The semiconductor device further includes a second source/drain feature in the substrate on an opposite side of a gate stack from the first source/drain feature, wherein the second source/drain feature has a substantially uniform thickness.

Abstract: A system and method for fabricating a 3D image sensor structure is disclosed. The method comprises providing an image sensor with a backside illuminated photosensitive region on a substrate, applying a first dielectric layer to the first side of the substrate opposite the substrate side where image data is gathered, and applying a semiconductor layer that is optionally polysilicon, to the first dielectric layer. A least one control transistor may be created on the first dielectric layer, within the semiconductor layer and may optionally be a row select, reset or source follower transistor. An intermetal dielectric may be applied over the first dielectric layer; and may have at least one metal interconnect disposed therein. A second interlevel dielectric layer may be disposed on the control transistors. The dielectric layers and semiconductor layer may be applied by bonding a wafer to the substrate or via deposition.

Abstract: A surface treatment of a magnesium alloy includes preparing a substrate of magnesium alloy, micro-arc oxidizing the substrate of magnesium alloy, forming an oxide layer with a hydroxyl group on the substrate of magnesium alloy, silylizing the oxide layer of the substrate of magnesium alloy with the oxide layer, by soaking the substrate of magnesium alloy in a processing solution with a silyl group-containing compound for 1-300 minutes, and placing the substrate of magnesium alloy with the silylized oxide layer at 70-200° C. for 1-300 minutes, allowing a condensation reaction to occur. The manufactured surface-treated magnesium alloy shows a decreased degradation rate in vivo.

Abstract: An acoustic transducer with high sensitivity includes a base plate, a back plate and a vibrating membrane. The vibrating membrane is peripherally fixed to the base plate and covers an opening of the base plate. The back plate has a positioning member connected between the back plate and the vibrating membrane, so as to define at least one vibratile portion that is arranged annularly by a plurality of elastic members. Thereby, the vibratile portion has a reduced deformable width and increased rigidity, so can effectively improve its acoustically receiving sensitivity and signal-to-noise ratio.

Abstract: A receiving circuit for a digital television is provided. The receiving circuit of the digital television, adapted to process a digital television signal to generate transmission data, includes: a front-end circuit, configured to process the digital television signal to generate an interleaved signal; a setting unit, configured to provide a setting value associated with a digital video standard of the digital television signal; a frequency de-interleaving and time de-interleaving circuit, configured to select a frequency de-interleaving scheme and a time de-interleaving scheme corresponding to different digital video standards according to the setting value, and to process the interleaved signal to generate a de-interleaved signal; a quadrature amplitude modulation (QAM) demapping circuit, configured to demap the de-interleaved signal to generate a demapped signal; and a decoder, configured to decode the demapped signal to generate the transmission data.

Abstract: In an LED dimming and driving method and its circuit, a receiver, a current source and a controller are installed in a dimming module, and after the receiver has received a dimming signal, the current source is driven to output a current with a magnitude corresponsive to the dimming signal, and then after the controller has converted the current into a voltage level by a terminal resistor, the magnitude of the driving current of the LED is adjusted according to the voltage level to improve a linear dimming accuracy.

Abstract: An embodiment method for forming an image sensor includes forming an anti-reflective coating over a surface of a semiconductor supporting a photodiode, forming an etching stop layer over the anti-reflective coating, forming a buffer oxide over the etching stop layer, and selectively removing a portion of the buffer oxide through etching, the etching stop layer protecting the anti-reflective coating during the etching. An embodiment image sensor includes a semiconductor disposed in an array region and in a periphery region, the semiconductor supporting a photodiode in the array region, an anti-reflective coating disposed over a surface of the semiconductor, an etching stop layer disposed over the anti-reflective coating, a thickness of the etching stop layer over the photodiode in the array region less than a thickness of the etching stop layer in the periphery region, and a buffer oxide disposed over the etching stop layer in the periphery region.

Abstract: A plug for provision of power includes a housing forming a receiving cavity with two opposite sites in a vertical direction which is compatible with a standard plug connector with twelve contacts on each site and a first and second rows of contacts on the sides while in diagonally symmetrical manner. Each contact includes a contacting section, and a connecting section for directly connecting to a corresponding wire. Each row of contacts is categorized with a pair of power contacts, a pair of grounding contacts and a specific contact without any high speed differential pair. Two pair of power contacts of both two rows are electrically connected together either via direct mechanical connection via vertical extensions or via indirect electrical connection via the latch which has a pair of side arms extending into the receiving cavity at two opposite transverse ends.

Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element and a second semiconductor element bonded on the first semiconductor element. The first semiconductor element includes a first substrate, a common conductive feature in the first substrate, a first inter-level dielectric (ILD) layer, a first interconnection feature and a conductive plug connecting the first interconnection feature to the common conductive feature. The second semiconductor element includes a second substrate, a second ILD layers over the second substrate and a second interconnection feature in second ILD layers. The device also includes a conductive deep plug connecting to the common conductive feature in the first semiconductor element and the second interconnection feature. The conductive deep plug is separated with the conductive plug by the first ILD layer.

Abstract: An electronic device and a data transmission method thereof are provided. The electronic device includes a counter, a multiplexer, and a buffer. The counter counts the number of read times that the host device reads the electronic device, and produces a read time header corresponding to the number of read times. The multiplexer selects a piece of transmission data in a plurality of data to be transmitted according to the read time header. Each of the plurality of data to be transmitted corresponds to a different read time header related to the varied number of read times. The buffer buffers the read time header and outputs the read time header and the transmission data to the host device after receiving the transmission data. The host device decodes the read time header and the transmission data to obtain the selected data to be transmitted.

Abstract: In one embodiment, a method implemented by a processor, comprising receiving voltage values corresponding to a battery system, receiving charge values corresponding to charge flowing through the battery system, and determining a state of charge based on specified anchoring points of a charge integration, the anchoring points based on the received voltage and time.

Abstract: A transmission system and a transmission method for network address translation traversal are provided. The transmission system includes a private network device, a network address record device, a public network device and a network address translation server. The network address record device records an inner network address of the private network device and an outer network address corresponding to the inner network address. The public network device inquires the inner network address of the private network device and the outer network address corresponding to the inner network address from the network address record device, and generates a packet according to the inner network address and the outer network address corresponding to the inner network address. The network address translation server receives the packet from the public network device, and transmits the packet to the public network device.

Abstract: The present disclosure proposes a handover management method and a base station having a smart antenna using the same method. A transceiver of the base station transmits and receives wireless data. An interface controller of the base station transmits a source beam-forming information and receives a target beam-forming information.

Abstract: A method and apparatus for a low resistance image sensor contact, the apparatus comprising a photosensor disposed in a substrate, a first ground well disposed in a first region of the substrate, the first ground well having a resistance lower than the substrate, and a ground line disposed in a region adjacent to the first ground well. The first ground well is configured to provide a low resistance path to the ground line from the substrate for excess free carriers in the first region of the substrate. The apparatus may optionally comprise a second ground well having a lower resistance than the first ground well and disposed between the first ground well and the ground line, and may further optionally comprise a third ground well having a lower resistance than the second ground well and disposed between the second ground well and the ground line.

Abstract: The disclosure describes an exemplary binding layer formed on Aluminum (Al) substrate that binds the substrate with a coated material. Additionally, an extended form of the binding layer is described. By making a solution containing Al-transition metal elements-P—O, the solution can be used in slurry making (the slurry contains active materials) in certain embodiments. The slurry can be coated on Al substrate followed by heat treatment to form a novel electrode. Alternatively, in certain embodiments, the solution containing Al-transition metal elements-P—O can be mixed with active material powder, after heat treatment, to form new powder particles bound by the binder.

Abstract: A heat dissipating device includes a supporting part, a plurality of first fins and a plurality of second fins. The first fins are disposed in a vertical array at the supporting part. The second fins are disposed in an inclined array at the supporting part. The first fins and the second fins are staggeredly disposed and adjacent to each other correspondingly. The heat exchange efficiency of the fins is improved so as to increase the heat dissipating efficiency of the heat dissipating device.

Abstract: A method of forming a conductive structure includes forming a first opening and a second opening in a dielectric layer on a substrate, wherein the first opening is narrower than the second opening. The method further includes depositing a diffusion barrier layer to line the first opening and the second opening. The method further includes forming a metal layer over the diffusion barrier layer to fill at least portions of the first opening and the second opening, wherein a maximum thickness of the metal layer in the first opening is greater than a maximum thickness of the metal layer in the second opening.

Abstract: A light emitting device driving circuit and a method thereof are provided. The light emitting device driving circuit includes a frequency detection circuit and a frequency adjustment circuit. The frequency detection circuit is configured to detect a light source frequency of a light emitting device to provide at least one detection frequency signal. The frequency adjustment circuit adjusts the light source frequency of the light emitting device according to the detection frequency signal and a plurality of preset flicker frequencies.

Abstract: An illuminated running board for a vehicle includes a light guide plate, a panel, and a luminous module. A plurality of convex portions is formed on a top surface of the light guide plate, and a plurality of optic pattern portions is formed on a bottom surface of the light guide plate. A groove is formed in the bottom surface of the light guide plate and spaced from the optic pattern portions. The panel mounted on the top surface of the light guide plate has a plurality of through-holes, each of which is penetrated by one of the convex portions. The luminous module installed in the groove includes a plurality of luminous elements which are not opposite to the convex portions. Light rays from the luminous elements are conducted into the light guide plate, reflected to the optic pattern portions, and projected upward from the convex portions.

Abstract: The present invention proposes a relaxation state evaluation system and method and a computer program product thereof. The method comprises steps: measuring ECG data of a user; analyzing the ECG data to generate a first, second, third and fourth parameters, wherein the first parameter is the short-scale entropy slope of the user before cardiovascular disease treatment (CVDT); the second parameter is the difference of the post-CVDT and pre-CVDT mean RR intervals; the third parameter is the logarithm of the variance of the pre-CVDT high frequency NN intervals; the fourth parameter is the logarithm of the ratio of the variances of the pre-CVDT low frequency and high frequency NN intervals; working out an evaluation index, which is a function of the abovementioned parameters; and evaluating the relaxation state of the user, wherein the user is determined to be in a relaxation state if the evaluation index is over a threshold.