Abstract: A partitioning method for partitioning a group of power-ground (PG) cells is disclosed. The method includes forming a first partition by selecting at least one in-boundary PG cell from the group of PG cells, adding at least one out-boundary PG cell from the group of PG cells into the first partition, forming a second partition by selecting the remaining in-boundary PG cells and the remaining out-boundary PG cells in the group of PG cells, calculating the total area of the in-boundary PG cells in the first partition, calculating the total area of the out-boundary PG cells in the first partition, calculating the total area of the in-boundary PG cells in the second partition, calculating the total area of the out-boundary PG cells in the second partition, and calculating the difference between the total areas of in-boundary PG cells in the first partition and the out-boundary PG cells in the first partition.

Abstract: A method performed by at least one processor includes: accessing a layout of an integrated circuit (IC), the layout comprising a resistor-capacitor (RC) netlist comprising a plurality of circuit nodes; identifying an RC network in the RC netlist; determining a characterization matrix corresponding to the RC network; updating the RC netlist by replacing the RC network with the characterization matrix; and calculating voltages and currents of the plurality of circuit nodes based on the updated RC netlist.

Abstract: A method for forming an integrated device is provided. The method includes the following operations. A first circuit layout having a first power path and a second power path is provided. The first power path and the second power path are aligned in a first direction. A first pitch between the first power path and the second power path is analyzed. It is determined whether the first pitch is less than a threshold pitch. If the first pitch is less than the threshold pitch, the second power path is modified in a second direction. The second direction is perpendicular to the first direction.

Abstract: A method includes generating a first timing library for a first set of circuit elements for a first set of input parameters. Generating the first timing library includes determining device characteristics for each of the circuit elements in the first set of circuit elements and storing the determined device characteristics in a database. A second timing library is generated for a second set of circuit elements for a second set of input parameters. The second timing library is generated by using one or more of the determined device characteristics previously stored in the database. A circuit is formed on a substrate. The circuit includes at least one of the first set of circuit elements or the second set of circuit elements.

Abstract: A method of designing a layout includes assigning a first color group to a plurality of first routing tracks. The method includes assigning a second color group to a plurality of second routing tracks. A first routing track is between adjacent second routing tracks. The method includes assigning a color from the first color group to each default conductive element along each first routing track. A color of a first default conductive element along each first routing track is different from a color of an adjacent default conductive element along a same first routing track. The method includes assigning a color from the second color group to each default conductive element along each second routing track. A color of a first default conductive element along each second routing track is different from a color of an adjacent default conductive element along a same second routing track.

Abstract: In some embodiments, a plurality of first input waveforms having a same first input transition characteristic and different first tail characteristics are obtained. A first cell is characterized using the plurality of first input waveforms to create a plurality of corresponding first entries associated with the first input transition characteristic in a library. A design layout is generated based on performing circuit simulation using at least one entry of the plurality of first entries. An integrated circuit (IC) chip is manufactured using the design layout.

Abstract: A method of forming an integrated circuit is provided. The method includes several operations. A semiconductor substrate is received, and a conductive grid is disposed over the semiconductor substrate, wherein the conductive grid includes a plurality of non-continuous conductive lines. A plurality of first conductive lines and a plurality of second conductive lines are selected from the plurality of non-continuous conductive lines. The plurality of second conductive lines is replaced by a plurality of third conductive lines respectively, wherein a space between adjacent third conductive lines is greater than a space between adjacent second conductive lines. A system configured to perform the method is also provided.

Abstract: A semiconductor device includes: a power grid (PG) arrangement including: a conductive layer M(i) including segments which are conductive, where i is an integer and i?0; and a conductive layer M(i+1) over the conductive layer M(i), the conductive layer M(i+1) including segments which are conductive; the M(i) segments including first and second segments designated correspondingly for first and second reference voltages, the first and second segments being interspersed and substantially parallel to a first direction; and the segments in the conductive layer M(i+1) including third and fourth segments designated correspondingly for the first and second reference voltages; the third and fourth segments being interspersed and substantially parallel to a perpendicular second direction; and wherein the segments in the conductive layer M(i+1) are arranged substantially asymmetrically such that each fourth segment is located, relative to the first direction, substantially asymmetrically between corresponding adjacent o

Abstract: A method of forming an integrated circuit includes: forming a conductive grid on a semiconductor substrate; selecting a plurality of first conductive lines from a plurality of non-continuous conductive lines according to a first mask layer assigned to the plurality of first conductive lines; selecting a plurality of second conductive lines from the plurality of non-continuous conductive lines according to a second mask layer assigned to the plurality of second conductive lines, wherein the second mask layer different from the first mask layer, and the plurality of second conductive lines is electrically connected to the plurality of first conductive lines via the plurality of continuous conductive lines; and replacing the plurality of second conductive lines by a plurality of third conductive lines respectively, wherein the plurality of third conductive lines is assigned to the first mask layer.

Abstract: A method of designing an integrated circuit device includes receiving an initial design of an integrated circuit, including a selection and location of a functional group of integrated circuit components, a power grid with multiple layers of conductive lines for supplying power to the components, and vias of one or more initial sizes interconnecting the conductive lines of different layers. The method further includes determining, based on a predetermined criterion such as the existence of unoccupied space for a functional unit, that a via modification can be made. The method further includes substituting the one or more of the via with a modified via of a larger cross-sectional area or a plurality of vias having a larger total cross-sectional area than the initial via. The method further includes confirming that the modified design complies with a predetermined set of design rules.

Abstract: A method for forming an integrated device includes following operations. A first circuit is provided. The first circuit has a first connecting path, a plurality of second connecting paths, and a third connecting path. The plurality of second connecting paths are electrically connected to a first connecting portion of the first connecting path. The third connecting path is electrically coupled to a second connecting portion of the first connecting path. An electromigration (EM) data of the first connecting path is analyzed to determine if a third connecting portion between the first connecting portion and the second connecting portion induces EM phenomenon. The first circuit is modified for generating a second circuit when the third connecting portion induces EM phenomenon. The integrated device according to the second circuit is generated.

Abstract: A method of forming a semiconductor device includes: providing a first circuit having a plurality of circuit cells; analyzing a loading capacitance on a first pin cell connecting a first circuit cell and a second circuit cell in the plurality of circuit cells to determine if the loading capacitance of the first pin cell is larger than a first predetermined capacitance; replacing the first pin cell by a second pin cell for generating a second circuit when the loading capacitance is larger than the first predetermined capacitance, wherein the second pin cell is different from the first pin cell; and generating the semiconductor device according to the second circuit.

Abstract: A method of forming an integrated circuit includes: forming a conductive grid on a semiconductor substrate; selecting a plurality of first conductive lines from a plurality of non-continuous conductive lines according to a first mask layer assigned to the plurality of first conductive lines; selecting a plurality of second conductive lines from the plurality of non-continuous conductive lines according to a second mask layer assigned to the plurality of second conductive lines, wherein the second mask layer different from the first mask layer, and the plurality of second conductive lines is electrically connected to the plurality of first conductive lines via the plurality of continuous conductive lines; and replacing the plurality of second conductive lines by a plurality of third conductive lines respectively, wherein the plurality of third conductive lines is assigned to the first mask layer.

Abstract: A method includes accessing a design data of an integrated circuit (IC), the design data including a plurality of layers. For each of the layers, the method performs: assigning a bin size of the respective layer based on a layout property of the respective layer; and performing a bin-based feature allocation according to the assigned bin size. The method also includes updating the design data according to the bin-based feature allocation. At least one of the accessing, assigning, performing and updating steps is conducted by at least one processor.

Abstract: An integrated circuit that includes a first row having a first height, with a first cell in the first row that has the first height. The integrated circuit further includes a second row having a second height, where the first height is not an integer multiple of the second height. A second cell is in the second row that has the second height.

Abstract: An integrated circuit includes a cell layer, a first metal layer, and a first conductive via. The cell layer includes first and second cells, each of which is configured to perform a circuit function. The first metal layer is above the cell layer and includes a first conductive feature that extends from the first cell into the second cell and that is configured to receive a supply voltage. A first conductive via interconnects the cell layer and the metal layer.

Abstract: A method performed by at least one processor includes: accessing a layout of an integrated circuit (IC), the layout comprising a resistor-capacitor (RC) netlist comprising a plurality of circuit nodes; identifying an RC network in the RC netlist; determining a characterization matrix corresponding to the RC network; updating the RC netlist by replacing the RC network with the characterization matrix; and calculating voltages and currents of the plurality of circuit nodes based on the updated RC netlist.

Abstract: A method is disclosed that includes the operation below. Vertices in a conflict graph are sorted into a first clique and a second clique, in which the conflict graph corresponds to a layout of a circuit. A first vertex of the vertices is merged with a second vertex of the vertices, to generate a reduced graph, in which the first clique excludes the second vertex, and the second clique excludes the first vertex. A first color pattern of a plurality of color patterns is assigned to a first pattern, corresponding to the first vertex, and a second pattern, corresponding to the second vertex, in the layout according to the reduced graph.