Abstract: The present disclosure describes an example method for cell placement in an integrated circuit (IC) layout design. The method includes partitioning a layout area into one or more contiguous units, where each unit includes a plurality of placement sites. The method also includes mapping a first set of pin locations and a second set of pin locations to each of the one or more contiguous units. The method further includes placing a cell in the one or more contiguous units, where the cell is retrieved from a cell library that includes a plurality of pin locations for the cell. The placement of the cell is based on an allocation of one or more pins associated with the cell to at least one of a pin track from the first plurality of pin locations, a pin track from second plurality of pin locations, or a combination thereof.

Abstract: The present disclosure describes an example method for cell placement in an integrated circuit layout design. The method includes retrieving, from a cell library, first and second cells each including a first local metal track proximate to a top boundary and a second local metal track proximate to a bottom boundary. The method includes placing, by a processor, the first and second cells in a layout area including global metal tracks of first and second types. Each global metal track of the first type and each global metal tracks of the second type alternate between one another in the layout area. The first and second local metal tracks of the first cell is aligned with adjacent first global metal track of the first and second types, respectively. The first and second local metal tracks of the second cell is aligned with adjacent second global metal track of the first and second types, respectively.

Abstract: Embodiments of mechanisms for forming power gating cells and virtual power circuits on multiple active device layers are described in the current disclosure. Power gating cells and virtual power circuits are formed on separate active device layers to allow interconnect structure for connecting with the power source be formed on a separate level from the interconnect structure for connecting the power gating cells and the virtual power circuits. Such separation prevents these two types of interconnect structures from competing for the same space. Routings for both types of interconnect structures become easier. As a result, metal lengths of interconnect structures are reduced and the metal widths are increased. Reduced metal lengths and increased metal widths reduce resistance, improves resistance-capacitance (RC) delay and electrical performance, and improves interconnect reliability, such as reducing electro-migration.

Abstract: A method for timing optimization is disclosed. The method includes obtaining information on timing of paths in a chip, wherein the information includes a mean of slacks and a sigma of slacks of each of the paths, determining a sigma margin (SM) value each of the paths, the SM value being obtained by dividing the mean by the sigma, and determining that a first path of the paths is more critical than a second path of the paths, an SM value of the first path being smaller than that of the second path.

Abstract: In some embodiments, in a method performed by at least one processor, spaces among a plurality of layout segments is analyzed by the at least one processor to determine at least one first-type conflicted edge according to a first predetermined length. Spaces among the plurality of layout segments is analyzed by the at least one processor to determine a plurality of potential conflicted edges according to a second predetermined length different from the first predetermined length. At least one second-type conflicted edge is determined by the at least one processor according to the plurality of potential conflicted edges. If at least one odd-vertex loop is formed in the plurality of layout segments is checked by the at least one processor according to the at least one first-type conflicted edge and the at least one second-type conflicted edge to determine if a violation occurs in the plurality of layout segments.

Abstract: A method includes identifying the first path as a target path, wherein an operation speed of the target path is adjusted from the corner case; deriving and outputting first values from the lookup table by indexing the lookup table with a threshold voltage associated with the first path identified as the target path as the main threshold voltage and a threshold voltage associated with the second path as the slave threshold voltage; calculating a first extra time based on the first values and first cell delays associated with the first path.

Abstract: An integrated circuit includes a substrate and a first set of functional cell units formed over the substrate. Each of the functional cell units includes a pair of functional cells that have different threshold voltages and a filler cell between the functional cells thereof. A number of the functional cell units in the first set is equal to or greater than a number of a second set of functional cell units, each of which includes a pair of functional cells that have different threshold voltages and that abut against each other. As such, a leakage current of the integrated circuit is reduced.

Abstract: A partitioning method for partitioning a group of power-ground (PG) cells is disclosed. The method includes forming a first partition by selecting at least one in-boundary PG cell from the group of PG cells, adding at least one out-boundary PG cell from the group of PG cells into the first partition, forming a second partition by selecting the remaining in-boundary PG cells and the remaining out-boundary PG cells in the group of PG cells, calculating the total area of the in-boundary PG cells in the first partition, calculating the total area of the out-boundary PG cells in the first partition, calculating the total area of the in-boundary PG cells in the second partition, calculating the total area of the out-boundary PG cells in the second partition, and calculating the difference between the total areas of in-boundary PG cells in the first partition and the out-boundary PG cells in the first partition.

Abstract: A method includes generating a first timing library for a first set of circuit elements for a first set of input parameters. Generating the first timing library includes determining device characteristics for each of the circuit elements in the first set of circuit elements and storing the determined device characteristics in a database. A second timing library is generated for a second set of circuit elements for a second set of input parameters. The second timing library is generated by using one or more of the determined device characteristics previously stored in the database. A circuit is formed on a substrate. The circuit includes at least one of the first set of circuit elements or the second set of circuit elements.

Abstract: A power grid of an integrated circuit (IC) is provided. The power grid includes a plurality of first power lines formed in a first metal layer, a plurality of second power lines formed in the first metal layer and parallel to the first power lines, a plurality of third power lines formed in a second metal layer, and a plurality of fourth power lines formed in the second metal layer and parallel to the third power lines. The first and second power lines are interlaced in the first metal layer. The third and fourth power lines are interlaced in the second metal layer. Distances from the individual first power line to the two adjacent second power lines are the same, and distances from the individual third power line to the two adjacent fourth power lines are different.

Abstract: An integrated circuit includes a cell that is between a substrate and a supply conductive line and that includes a source region, a contact conductive line, a power conductive line, and a power via. The contact conductive line extends from the source region. The power conductive line is coupled to the contact conductive line. The power via interconnects the supply conductive line and the power conductive line.

Abstract: An integrated circuit includes a substrate and a first set of functional cell units formed over the substrate. Each of the functional cell units includes a pair of functional cells that have different threshold voltages and a filler cell between the functional cells thereof. A number of the functional cell units in the first set is equal to or greater than a number of a second set of functional cell units, each of which includes a pair of functional cells that have different threshold voltages and that abut against each other. As such, a leakage current of the integrated circuit is reduced.

Abstract: An integrated circuit (IC) structure includes a power rail oriented in a power rail direction and first metal segments above the power rail, oriented in a first metal level direction perpendicular to the power rail direction. First vias positioned between the power rail and the first metal segments are positioned at locations where first metal segments overlap the power rail. A second metal segment is positioned above the first metal segments, overlaps the power rail, and is oriented in the power rail direction. Second vias are positioned above the first vias between the first metal segments and the second metal segments, and a power strap is positioned above the second metal segment. The power strap is electrically connected to the power rail, each first metal segment of the plurality of first metal segments has a minimum width, and the power strap has a width greater than a minimum width.

Abstract: An embodiment cell shift scheme includes abutting a first transistor cell against a second transistor cell and shifting a place and route boundary away from a polysilicon disposed between the first transistor cell and the second transistor cell. In an embodiment, the cell shift scheme includes shifting the place and route boundary to prevent a mismatch between a layout versus schematic (LVS) netlist and a post-simulation netlist.

Abstract: A FIT evaluation method for an IC is provided. The FIT evaluation method includes accessing data representing a layout of the IC comprising a number of metal lines and a number of VIAs; picking a number of nodes along the metal lines; dividing each of the metal lines into a number of metal segments based on the nodes; and determining a FIT value for each of the metal segments or VIAs to verify the layout and fabricate the IC.

Abstract: An integrated circuit (IC) design method is disclosed. The method includes: using a computer to perform synthesis upon a register transfer level (RTL) IC design to generate a gate level netlist; performing place and route (P&R) upon the gate level netlist to generate a layout; determining a sink current distribution information of the layout; and generating a voltage (IR) drop/electro-migration (EM) analysis result of the layout according to the sink current distribution information; wherein the layout includes a cell having a cell height that is N times higher than a single cell height, where N is an integer and greater than 1, and the cell corresponds to N power/ground (P/G) rail sets; wherein the sink current distribution information includes a proportion of a sink current flowing through each of the N power/ground (P/G) rail sets with respect to the cell when operated. Associated non-transitory computer-readable medium is also disclosed.

Abstract: A method performed by a processor, the method including preparing a netlist describing a first circuit including an active component, obtaining an original electrical characteristic of the active component, wherein an electrical characteristic of the active component is the original electrical characteristic in a condition that the active component has not been operated; obtaining an aged data describing a variation in the original electrical characteristic, wherein the variation is caused by operating the first circuit under a first mode and a second mode different from the first mode during a time period; providing a simulation result by simulating, based on an aged electrical characteristic, the first circuit operating under the first mode and the second mode during the time period, wherein the aged electrical characteristic is a combination of the original electrical characteristic and the variation.

Abstract: A method includes receiving an input that is in an electronic file format and that includes information associated with an integrated circuit (IC) layout, selecting a non EM rule compliant metal line of the IC layout that is in violation of an EM rule from the input, obtaining a current of the non EM rule compliant metal line from the input, comparing the current with a threshold current, and determining whether the EM rule violation is negligible based on the result of comparison. As such, a semiconductor device may be fabricated from the IC layout when it is determined that the EM rule violation is negligible.

Abstract: A method of designing a layout includes assigning a first color group to a plurality of first routing tracks. The method includes assigning a second color group to a plurality of second routing tracks. A first routing track is between adjacent second routing tracks. The method includes assigning a color from the first color group to each default conductive element along each first routing track. A color of a first default conductive element along each first routing track is different from a color of an adjacent default conductive element along a same first routing track. The method includes assigning a color from the second color group to each default conductive element along each second routing track. A color of a first default conductive element along each second routing track is different from a color of an adjacent default conductive element along a same second routing track.

Abstract: Embodiments of mechanisms for forming power gating cells and virtual power circuits on multiple active device layers are described in the current disclosure. Power gating cells and virtual power circuits are formed on separate active device layers to allow interconnect structure for connecting with the power source be formed on a separate level from the interconnect structure for connecting the power gating cells and the virtual power circuits. Such separation prevents these two types of interconnect structures from competing for the same space. Routings for both types of interconnect structures become easier. As a result, metal lengths of interconnect structures are reduced and the metal widths are increased. Reduced metal lengths and increased metal widths reduce resistance, improves resistance-capacitance (RC) delay and electrical performance, and improves interconnect reliability, such as reducing electro-migration.