Abstract: A method of forming a semiconductor arrangement is provided. The semiconductor arrangement includes an interconnection arrangement comprising a first connection between a driver and a receiver. At least one buffer is disposed along the first connection to reduce delay associated with the interconnection arrangement. However, buffers increase power consumption, and thus a determination is made as to whether a buffer is unnecessary. A buffer is determined to be unnecessary where removal of the buffer does not violate a timing constraint regarding an amount of time a signal takes to go from the driver to the receiver. If a buffer is determined to be unnecessary, the buffer is removed to reduce power consumption.

Abstract: A method comprises providing a non-transitory, machine-readable storage medium storing a partial netlist of at least a portion of a previously taped-out integrated circuit (IC) layout, representing a set of photomasks for fabricating an IC having the IC layout such that the IC meets a first specification value. A computer identities a proper subset of a plurality of first devices in the IC layout, such that replacement of the proper subset of the first devices by second devices in a revised IC layout satisfies a second specification value different from the first specification value. At least one layout mask is generated and stored in at least one non-transitory machine readable storage medium, accessible by a tool for forming at least one additional photomask, such that the set of photomasks and the at least one additional photomask are usable to fabricate an IC according to the revised IC layout.

Abstract: In some embodiments, a fishbone structure in a power network includes a first conductive segment in a first conductive layer running in a first direction, a plurality of second conductive segments in a second conductive layer running in a second direction and a plurality of interlayer vias between the first conductive layer and the second conductive layer. The second direction is substantially vertical to the first direction. The plurality of second conductive segments overlap with the first conductive segment. The plurality of interlayer vias are formed at where the plurality of second conductive segments overlap with the first conductive segment. Each of the plurality of second conductive segments has a width such that the first conductive segment has a first unit spacing with a first adjacent conductive line or one of the plurality of second conductive segments has a second unit spacing with a second adjacent conductive line.

Abstract: Embodiments of mechanisms for forming power gating cells and virtual power circuits on multiple active device layers are described in the current disclosure. Power gating cells and virtual power circuits are formed on separate active device layers to allow interconnect structure for connecting with the power source be formed on a separate level from the interconnect structure for connecting the power gating cells and the virtual power circuits. Such separation prevents these two types of interconnect structures from competing for the same space. Routings for both types of interconnect structures become easier. As a result, metal lengths of interconnect structures are reduced and the metal widths are increased. Reduced metal lengths and increased metal widths reduce resistance, improves resistance-capacitance (RC) delay and electrical performance, and improves interconnect reliability, such as reducing electro-migration.

Abstract: A method for creating double patterning compliant integrated circuit layouts is disclosed. The method allows patterns to be assigned to different masks and stitched together during lithography. The method also allows portions of the pattern to be removed after the process.

Abstract: In some embodiments, in a method, cell layouts of a plurality of cells are received. For each cell, a respective constraint that affects a geometry of an interconnect to be coupled to an output pin of the cell in a design layout is determined based on a geometry of the output pin of the cell in the cell layout.

Abstract: An embodiment cell shift scheme includes abutting a first transistor cell against a second transistor cell and shifting a place and route boundary away from a polysilicon disposed between the first transistor cell and the second transistor cell. In an embodiment, the cell shift scheme includes shifting the place and route boundary to prevent a mismatch between a layout versus schematic (LVS) netlist and a post-simulation netlist.

Abstract: One or more techniques or systems for determining double patterning technology (DPT) layout routing compliance are provided herein. For example, a layout routing component of a system is configured to assign a pin loop value to a pin loop. In some embodiments, the pin loop value is assigned based on a mask assignment of a pin of the pin loop. In some embodiments, the pin loop value is assigned based on a number of nodes associated with the pin loop. DPT compliance or a DPT violation is determined for the pin loop based on the pin loop value. In this manner, odd loop detection associated with DPT layout routing is provided because a DPT violation results in generation of an additional instance of a net, for example. Detecting an odd loop allows a design to be redesigned before fabrication, where the odd loop would present undesired issues.

Abstract: A method of designing a circuit includes receiving a circuit design, and determining a temperature change of at least on back end of line (BEOL) element of the circuit design. The method further includes identifying at least one isothermal region within the circuit design; and determining, using a processor, a temperature increase of at least one front end of line (FEOL) device within the at least one isothermal region. The method further includes combining the temperature change of the at least one BEOL element with the temperature change of the at least one FEOL device, and comparing the combined temperature change with a threshold value.

Abstract: A method includes identifying at least one local power segment of a circuit, estimating at least one performance parameter of the at least one power segment based on a computer-based simulation of the circuit, and changing a design of the circuit based on at least one electromigration avoidance strategy if the at least one parameter is greater than or equal to a threshold value. A data file representing the circuit is stored if the at least one parameter is less than the threshold value.

Abstract: Embodiments of mechanisms for forming power gating cells and virtual power circuits on multiple active device layers are described in the current disclosure. Power gating cells and virtual power circuits are formed on separate active device layers to allow interconnect structure for connecting with the power source be formed on a separate level from the interconnect structure for connecting the power gating cells and the virtual power circuits. Such separation prevents these two types of interconnect structures from competing for the same space. Routings for both types of interconnect structures become easier. As a result, metal lengths of interconnect structures are reduced and the metal widths are increased. Reduced metal lengths and increased metal widths reduce resistance, improves resistance-capacitance (RC) delay and electrical performance, and improves interconnect reliability, such as reducing electro-migration.

Abstract: An embodiment is a method for providing an adjusted electronic representation of an integrated circuit layout, the method including using one or more processor, generating a timing performance of a path in a first netlist, identifying a first cell in the path that violates a timing performance parameter, and generating a plurality of derivative cells from a subsequent cell that is in the path after the first cell, where each derivative cell includes a variation of the subsequent cell. The method further includes in response to the identifying the first cell, replacing the subsequent cell with at least one of the plurality of derivative cells to generate a first modified netlist, where the variation of the at least one of the plurality of derivative cells reduces the violation of the timing performance parameter, and generating a final netlist based on the first modified netlist.

Abstract: An embodiment cell shift scheme includes abutting a first transistor cell against a second transistor cell and shifting a place and route boundary away from a polysilicon disposed between the first transistor cell and the second transistor cell. In an embodiment, the cell shift scheme includes shifting the place and route boundary to prevent a mismatch between a layout versus schematic (LVS) netlist and a post-simulation netlist.

Abstract: A method of generating a techfile corresponding to a predetermined fabrication process is disclosed. The method includes determining a typical value and a corner variation value usable to model an electrical characteristic of a layer of back end of line (BEOL) features to be fabricated by the predetermined fabrication process, based on measurement of one or more sample integrated circuit chips fabricated by the predetermined fabrication process. A reduced variation value is calculated based on the corner variation value and a scaling factor. The techfile is generated based on the typical value and the reduced variation value.

Abstract: A method of generating a netlist comprises extracting a first capacitance value between the first set of electrical components inside a defined region using a first extraction technique. The method additionally comprises extracting a second capacitance value between a second set of electrical components comprising at least one electrical component outside the defined region using a second extraction technique different from the first extraction technique. The method also comprises generating the netlist including the first capacitance value and the second capacitance value. The first extraction technique is capable of extracting capacitance values between electrical components arranged in a first quantity of directions with respect to one another and the second extraction technique is capable of extracting capacitance values between electrical components arranged in a second quantity of directions with respect to one another. The first quantity of directions is greater than the second quantity of directions.

Abstract: An integrated circuit (IC) memory device includes a first conductive layer. The IC memory device also includes a second conductive layer over the first conductive layer. The IC memory device further includes a first-type pin box electrically coupled with the first conductive layer. The IC memory device additionally includes a second-type pin box, different from the first-type pin box, electrically coupled with the second conductive layer.

Abstract: A method comprises providing a non-transitory, machine-readable storage medium storing a partial netlist of at least a portion of a previously taped-out integrated circuit (IC) layout, representing a set of photomasks for fabricating an IC having the IC layout such that the IC meets a first specification value. A computer identities a proper subset of a plurality of first devices in the IC layout, such that replacement of the proper subset of the first devices by second devices in a revised IC layout satisfies a second specification value different from the first specification value. At least one layout mask is generated and stored in at least one non-transitory machine readable storage medium, accessible by a tool for forming at least one additional photomask, such that the set of photomasks and the at least one additional photomask are usable to fabricate an IC according to the revised IC layout.

Abstract: Among other things, one or more techniques and/or systems for performing design layout are provided. In an example, a design layout corresponds to a layout of a standard cell whose connectivity is described by a netlist. For example, the netlist specifies net types for respective vias of the standard cell. One or more connectivity rings are formed within the design layout to provide connectivity for one or more vias of the design layout. For example, a first connectivity ring is generated, such as from mandrel, to connect one or more ring one vias. A second connectivity ring is generated, such as from passive pattern, to connect one or more ring two vias. One or more cuts are generated within the design layout to isolate vias having different net types. In this way, the design layout is self-aligned double patterning (SADP) compliant.

Abstract: Embodiments of mechanisms for forming power gating cells and virtual power circuits on multiple active device layers are described in the current disclosure. Power gating cells and virtual power circuits are formed on separate active device layers to allow interconnect structure for connecting with the power source be formed on a separate level from the interconnect structure for connecting the power gating cells and the virtual power circuits. Such separation prevents these two types of interconnect structures from competing for the same space. Routings for both types of interconnect structures become easier. As a result, metal lengths of interconnect structures are reduced and the metal widths are increased. Reduced metal lengths and increased metal widths reduce resistance, improves resistance-capacitance (RC) delay and electrical performance, and improves interconnect reliability, such as reducing electro-migration.

Abstract: A method for cell characterization with Miller capacitance includes characterizing input capacitance of an input of a first stage in a cell by considering a first current transition at the input of the first stage up to a first stop time. The first stop time occurs during the first current transition exhibits a substantial tail portion contributed by the later of a first input voltage transition and a first output voltage transition reaching a corresponding steady state voltage. The first input voltage transition is associated with the input of the first stage. The first output voltage transition is associated with an output of the first stage coupled to the input through a capacitor.