Abstract: A test structure for characterizing an organic photodiode image sensor includes, on a common substrate, a cathode sheet resistance portion; a diode capacitance portion; an organic photodiode sheet resistance portion; a contact resistance portion; a step coverage portion; a quantum efficiency portion; a film adhesion portion; and an inkjet printing portion. The organic photodiode sheet resistance portion includes gate metal sets, each gate metal set including four evenly spaced metal lines terminating in a probe point, wherein the spacing within each gate metal set is progressively increased from a first gate metal set to a last gate metal set, and wherein a spacing between each gate metal set is larger than the spacing within any gate metal set; and an organic photodiode sheet formed over the gate metal sets.

Abstract: An article that includes: a glass, glass-ceramic or ceramic substrate comprising a primary surface; at least one of an optical film and a scratch-resistant film disposed over the primary surface; and an easy-to-clean (ETC) coating comprising a fluorinated material that is disposed over an outer surface of the at least one of an optical film and a scratch-resistant film. The at least one of an optical film and a scratch-resistant film comprises an average hardness of 12 GPa or more. Further, the outer surface of the at least one of an optical film and a scratch-resistant film comprises a surface roughness (Rq) of less than 1.0 nm. Further, the at least one of an optical film and a scratch-resistant film comprises a total thickness of about 500 nm or more.

Abstract: A single-phase flip-flop comprising: a master latch comprising: a first circuit to generate a master latch signal in response to a first master logic operation on a flip flop input signal and a first clock signal, and a second circuit to generate a master output signal in response to a second master logic operation on the first clock signal and master latch signal; a slave latch comprising: a third circuit to generate a slave output signal in response to a first slave logic operation on the first clock signal and one of the master output signal and an inverted slave output signal; and wherein the master latch is configured to capture the flip-flop input signal during a first portion of the first clock signal and the slave latch is configured to capture the master output signal during a second portion of the first clock signal.

Abstract: A circuit comprises an array of programmable memory elements fabricated on a substrate, each memory element having one or more processable regions which, when processed by an external process in which a material is applied to at least partially cover one or more of the regions, are configured to program that memory element to one of multiple states;a first set of control lines connected to the array of memory elements, by which the contents of each individual memory element are capable of being accessed by control signals applied to a respective combination of at least two control lines in the first set of control lines;and an array of second circuit elements, different to the memory elements, each connected to a control line of the first set of control lines and to another control line of a second set of control lines, different to the first set of control lines, so as to provide access to second circuit elements in the array.

Abstract: A storage bitcell comprising a first inverter cross-coupled with a second inverter, both the first and second inverter being in a path between a first potential and a second potential; wherein a first isolator is connected in the path between the first inverter and the first potential. The storage bitcell has particular application as Static Random-Access Memory (SRAM) circuitry.

Abstract: According to one embodiment of the present disclosure, an apparatus is provided. The apparatus comprises a data input to receive a data signal. The apparatus further comprises a latching circuitry. The latching circuitry comprises a first Correlated Electron Switch (CES) element and a second CES element. The latching circuitry further comprises a control circuit coupled to the first CES element and the second CES element. The control circuit is configured to program impedance states of the first CES element and the second CES element based on the data signal.

Abstract: A semiconductor device includes a semiconductor die having a first main face, a second main face and side faces connecting the first main face and the second main face. The semiconductor device also includes a conductive column arranged on the first main face of the semiconductor die and electrically coupled to the semiconductor die, and an insulating body arranged on the first main face of the semiconductor die. The insulating body has an upper main face and side faces. The upper main surface of the insulating body is coplanar with a top face of the conductive pillar. The semiconductor device further includes a metal layer arranged on the top face of the conductive pillar. The side faces of the semiconductor die and the side faces of the insulating body are coplanar.

Abstract: Embodiments are described for digital forward body biasing CMOS circuits. In an embodiment, a power management unit limits the amount of time for which digital forward body biasing may be implemented. In another embodiment, once a CMOS circuit is put into a full digital forward body bias mode, the CMOS circuit is gradually brought back to a zero forward body bias mode. In another embodiment, charge is shared among biased transistor wells during transition intervals when transitioning from one bias mode to another.

Abstract: Mechanisms are provided for energy management signalling with an apparatus for processing data, such as a system-on-chip integrated circuit (2). Processing circuitry (6, 8, 10) is coupled to consumer energy interface circuitry (14, 16, 18) which communicates with energy management circuitry (4). The energy management signals which are communicated include a static power consumption signal indicative of a level of power consumption which is independent of processing operations being performed and a dynamic power consumption signal indicative of a level of dynamic power consumption which is dependent upon the processing operations being performed.

Abstract: Techniques for implementing a self-test procedure of an integrated circuit are provided, where the self-test procedure comprises testing for an electrical connection between first and second input-output pads of the integrated circuit. A control device is capable of adapting a functional configuration of usage of the first and second input-output pads in dependence on presence of the electrical connection. A corresponding integrated circuit, printed circuit and method are also provided. These techniques allow the integrated circuit to be used in a variety of contexts, without requiring physical customisation of the integrated circuit to adapt it to its usage context, in particular where connections from the context to the pads of the integrated circuit may be made to individual pads in some contexts or may span more than one pad in other contexts.

Abstract: Broadly speaking, embodiments of the present techniques provide a voltage monitoring circuit for low power minimum-energy sensor nodes. The circuit comprises sensing circuitry to sense a monitored signal having a plurality of operating signal states; a first comparator having a first input for receiving an upper threshold signal; and a second comparator having a first input for receiving a lower threshold signal, the upper and lower threshold signals defining a range which includes at least one signal state of the plurality of operating states of the monitored signal, wherein the first and second comparators have a bias input for receiving a bias configuration setting, the bias configuration setting being selectable according to an operating signal state of the monitored signal.

Abstract: A single-phase flip-flop comprising: a master latch comprising: a first circuit to generate a master latch signal in response to a first master logic operation on a flip flop input signal and a first clock signal, and a second circuit to generate a master output signal in response to a second master logic operation on the first clock signal and master latch signal; a slave latch comprising: a third circuit to generate a slave output signal in response to a first slave logic operation on the first clock signal and one of the master output signal and an inverted slave output signal; and wherein the master latch is configured to capture the flip-flop input signal during a first portion of the first clock signal and the slave latch is configured to capture the master output signal during a second portion of the first clock signal.

Abstract: There is provided an apparatus comprising a requirement determination unit to determine an energy requirement for a system component. A status determination unit determines status information relating to a plurality of heterogeneous energy stores and actuating system control unit controls an activity of the system component in dependence on the status information relating to the plurality of heterogeneous energy stores and the energy requirement.

Abstract: A single-phase flip-flop comprising: a master latch comprising: a first circuit to generate a master latch signal in response to a first master logic operation on a flip flop input signal and a first clock signal, and a second circuit to generate a master output signal in response to a second master logic operation on the first clock signal and master latch signal; a slave latch comprising: a third circuit to generate a slave output signal in response to a first slave logic operation on the first clock signal and one of the master output signal and an inverted slave output signal; and wherein the master latch is configured to capture the flip-flop input signal during a first portion of the first clock signal and the slave latch is configured to capture the master output signal during a second portion of the first clock signal.

Abstract: A storage bitcell comprising a first inverter cross-coupled with a second inverter, both the first and second inverter being in a path between a first potential and a second potential; wherein a first isolator is connected in the path between the first inverter and the first potential. The storage bitcell has particular application as Static Random-Access Memory (SRAM) circuitry.

Abstract: An integrated circuit including a first voltage domain incorporates real time clock circuitry that communicates via communication circuitry with processing circuitry contained within a second voltage domain. The communication circuitry includes first parallel-to-serial conversion circuitry located within the first voltage domain, level shifting circuitry for passing serial signals between the voltage domains and second parallel-to-serial circuitry located in the second voltage domain.

Abstract: An interface device for a data processing system is provided. The interface device comprises first interface circuitry to receive incoming data and second interface circuitry to transmit processed data to a data store for storage. The interface device is provided with processing circuitry to generate the processed data from the incoming data wherein the processing carried out reduces the data in size. The processing circuitry is also responsive to at least one characteristic of the incoming data or the processed data to transmit a notification signal to a data processing component of the data processing system.

Abstract: Articles utilizing polymeric dielectric materials for gate dielectrics and insulator materials are provided along with methods for making the articles. The articles are useful in electronics-based devices that utilize organic thin film transistors.

Abstract: According to one embodiment of the present disclosure, a device comprises a latching circuitry, where the latching circuitry comprises at least one correlated electron random access memory (CeRAM) element. The latching circuitry further comprises a control circuit coupled to the at least one CeRAM element. The control circuit is configured to receive at least one control signal. Based on the at least one control signal, perform at least one of storing data into the latching circuitry and outputting data from the latching circuitry.

Abstract: Various implementations described herein are directed to an integrated circuit. The integrated circuit may include a comparator stage, a resistor, a capacitor, and active switches arranged to provide a clock signal having a time period that is independent of a first source voltage. Independence may be achieved by using a second source voltage derived from the first source voltage as a fixed ratio.