Abstract: Through-chip coupling is utilized for signal transport, where an interface is formed between a first coil on a first integrated circuit (IC) chip and a second coil on a second IC chip. The first coil is coupled to an antenna. The second coil is coupled to an amplifier circuit. The second coil is not in direct contact with the first coil. The first coil and the second coil communicatively transmit signals between the antenna and the first amplifier circuit.

Abstract: A quadrature oscillator includes a first oscillator having a first second-order harmonic node, a second oscillator having a second second-order harmonic node, and at least one capacitor coupling the first second-order harmonic node and the second second-order harmonic node. The first oscillator is configured to supply an in-phase signal and the second oscillator is configured to supply a quadrature signal.

Abstract: A multi-chip electronic device includes a first winding having a first port (P+) and a second port (P?). The first winding is formed in a metal layer of a first chip. The device further includes a second winding having a third (S+) and a fourth port (S?). The second winding is formed in a metal layer of a second chip. A center tap of the second winding is connected to a reference potential.

Abstract: A bipolar device includes: an emitter of a first polarity type constructed on a semiconductor substrate; a collector of the first polarity type constructed on the semiconductor substrate; a gate pattern in a mesh configuration defining the emitter and the collector; an intrinsic base of a second polarity type underlying the gate pattern; and an extrinsic base constructed atop the gate pattern and coupled with the intrinsic base, for functioning together with the intrinsic base as a base of the bipolar device.

Abstract: A representative injection-locked frequency divider includes a differential direct injection pair that is configured to receive and mix differential injection signals and an oscillator that is electrically connected to the differential direct injection pair and produces an operating frequency based on the mixed differential injection signals.

Abstract: Methods and apparatuses for time to digital conversion (TDC) are disclosed. A timing circuit comprises a TDC circuit, a calibration module, and a correction module. The TDC circuit is configured to provide a timing signal indicative of a timing difference between edges of a periodic reference clock signal and a variable feedback signal. The TDC circuit is also configured to provide a delay signal that is variably delayed relative to the reference clock signal. The calibration module is configured to provide a calibration signal to increase and decrease a total delay of the TDC circuit based on a time delay of the calibration signal plus a time delay of a correction signal. The correction module, which is configured to receive the timing signal and provide the correction signal, minimizes harmonic spurs in a frequency response of the timing signal by operating at a frequency of the reference clock signal.

Abstract: A representative level-shifter comprises a dynamically biased current source circuit that receives a first voltage, a first and a second unidirectional current-conducting devices, a first and a second pull-down devices, and a pull-up device. The first and second unidirectional current-conducting devices are coupled to the dynamically biased current source circuit. A voltage output of the level-shifter is located at a first node that is located between the current-constant circuit and the second unidirectional current-conducting device. The first and second pull-down devices are coupled to the first and second unidirectional current-conducting devices, respectively. The pull-up device receives a second voltage and is coupled to the dynamically biased current source circuit and the first unidirectional current-conducting device.

Abstract: A level shifter includes an input node, an output node, a pull-up transistor, a pull-down transistor, and at least one diode-connected device coupled between the pull-up transistor and the pull-down transistor. The level shifter is arranged to be coupled to a high power supply voltage, to receive an input signal having a first voltage level at the input node, and to supply an output signal having a second voltage level at the output node. The high power supply voltage is higher than the first voltage level. The at least one diode-connected device allows the output signal to be pulled up to about a first diode voltage drop below the high power supply voltage and/or to be pulled down to about a second diode voltage drop above ground. The first diode voltage drop and the second diode voltage drop are from the at least one diode-connected device.

Abstract: A low-noise amplifier (LNA) includes a first cascode gain stage coupled to an input node for increasing an amplitude of an RF input signal. A first variable gain network is coupled to the first cascode gain stage and includes a first inductor for boosting a gain of the first cascode gain stage, a first capacitor coupled to the first inductor for blocking a direct current (DC) voltage, and a first switch coupled to the first inductor and to the first capacitor. The first switch is configured to selectively couple the first inductor to the first cascode gain stage in response to a first control signal.

Abstract: A low-noise amplifier (“LNA”) includes a first cascode gain stage including a first complementary metal oxide semiconductor (“CMOS”) transistor configured to receive a radio frequency (“RF”) input signal and a second CMOS transistor coupled to an output node. The first inductive gate network is coupled to a gate of the second CMOS transistor for increasing a gain of the first cascode gain stage. The first inductive gate network has a non-zero inductive input impedance and includes at least one passive circuit element.

Abstract: An ESD protection circuit includes a signal pad, a short circuited shunt stub on-chip with and coupled to the signal pad, an open circuited shunt stub on-chip and coupled to the signal pad.

Abstract: A level shifter includes one PMOS and two NMOS transistors. A source of the first NMOS transistor is coupled to a low power supply voltage. An input signal is coupled to a gate of the first NMOS transistor and a source of the second NMOS transistor. The input signal has a voltage level up to a first power supply voltage. A source of the PMOS transistor is coupled to a second power supply voltage, higher than the first power supply voltage. An output signal is coupled between the PMOS and the first NMOS transistors. The first NMOS transistor is arranged to pull down the output signal when the input signal is a logical 1, and the second NMOS transistor is arranged to enable the PMOS transistor to pull up the output signal to a logical 1 at the second power supply voltage when the input signal is a logical 0.

Abstract: A layout system is described comprising a layout unit configured to layout cells in a mask design for a semiconductor chip based on library cells for a specified process node; a non-critical path determination unit configured to determine a non-critical path in the semiconductor chip; a cell determination unit configured to determine a group of cells in the mask design that form a part of the non-critical path and determine the corresponding library cell for at least one of the group of cells; a library cell modifying unit configured to modify one or more corresponding library cells to form a corresponding modified library cell; and a cell replacement unit configured to replace a library cell in the group of cells in the mask design that form a part of the non-critical path with the corresponding modified library cell.

Abstract: A time amplifier circuit has first and second inverters and first and second pull-down paths. Each inverter includes a first NMOS transistor and a first PMOS transistor. A source of the first NMOS transistor is coupled to a ground node directly or through a first additional NMOS transistor having a gate coupled to a respective input node. The first and second inverters are coupled to first and second input nodes and to first and second output nodes, respectively. The first pull-down path is from the first output node to the ground node and is enabled in response to the first input signal and the second output signal being high. The second pull-down path is from the second output node to ground and is enabled in response to the second input signal and the first output signal being high.

Abstract: A circuit includes an operational PMOS transistor of a logic gate driver. A control circuit is configured to turn off the operational PMOS transistor during a standby mode. The circuit also includes a sacrificial PMOS transistor coupled to an output node. The operational PMOS transistor is coupled to the output node. The sacrificial PMOS transistor is configured to keep the output node at a logical 1 during the standby mode.

Abstract: An integrated tunable inductor includes a primary inductor having a plurality of inductor turns, at least one closed loop eddy current coil proximate the primary inductor, and at least one variable resistor integrated in series with the eddy current coil.

Abstract: In accordance with an embodiment, a method for substrate noise analysis comprises using a first processor based system, creating and simulating a circuit schematic comprising a multi-terminal model of a transistor, and thereafter, creating a layout based on properties represented in the circuit schematic and simulation results of the simulating. The multi-terminal model comprises a source terminal, a gate terminal, a drain terminal, a body terminal, and a guard-ring terminal.

Abstract: A two-stage digital-to-analog converter for outputting an analog voltage in response to a M-bit digital input code includes a two-bit serial charge redistribution digital-to-analog converter having a high reference voltage input node for receiving a high reference voltage and a low reference voltage input node for receiving a low reference voltage, and a voltage selector. The voltage selector sets the high reference voltage and low reference voltage to selected levels depending on at least a portion of the M-bit digital input code.

Abstract: A fuse circuit is disclosed, which comprises at least one electrical fuse element having a resistance that changes after being stressed in an electromigration mode, a switching device serially coupled with the electrical fuse element in a predetermined path between a fuse programming power supply (VDDQ) and a low voltage power supply (GND) for selectively allowing a programming current passing through the electrical fuse element during a programming operation, and at least one peripheral circuit coupled to the VDDQ, wherein the peripheral circuit is active and draws current from the VDDQ during a fuse programming operation.

Abstract: An ESD protection device includes a first well of a first semiconductor type disposed in a substrate of a second semiconductor type forming a first diode. A second well of the second semiconductor type is formed in the substrate to form a second diode with the first well. A first plurality of doped regions of the first semiconductor type are formed in an upper surface of the first well. A second plurality of doped regions of the second semiconductor type are formed in the upper surface of the first well forming a third diode with the first well. A plurality of STI regions are formed in the upper surface of the first well. Each STI region is disposed between a doped region of the first and second semiconductor types. The third diode provides a current bypass when an ESD voltage spike is received at one of the first or second plurality of doped regions.