Abstract: A package structure and method for forming the same are provided. The method includes forming a through substrate via structure in a substrate, and forming a first trench in the substrate. The method includes stacking a first stacked die package structure over the substrate using a plurality of first bonding structures. The first bonding structures are between the substrate and the first stacked die package structure, and a there is plurality of cavities between two adjacent first bonding structures. The method also includes forming an underfill layer over the first stacked die package structure and in the cavities, and the underfill layer is formed in a portion of the first trench. The method further includes forming a package layer over the underfill layer.

Abstract: A structure and a formation method of a package structure are provided. The method includes disposing a semiconductor die structure over a substrate. The method also includes disposing a protective film over the substrate. The protective film has an opening exposing the semiconductor die structure, and sidewalls of the opening surround the semiconductor die structure. The method further includes dispensing an underfill material into the opening to surround the semiconductor die structure.

Abstract: An isolated switched-mode power converter converts power from an input source into power for an output load. A digital controller senses a secondary-side voltage, such as a rectified voltage, of the power converter. The secondary-side voltage is divided down using a high-impedance voltage divider. The resultant divided-down voltage is provided to a voltage sensor within the digital controller. The voltage sensor level shifts the provided voltage, and buffers the resulting level-shifted voltage. The buffered, level-shifted voltage is provided to a tracking analog-to-digital converter (ADC) for digitization. The buffered signal provided to the tracking ADC has a high current capability, such that the voltage input to the tracking ADC may quickly converge before the tracking ADC outputs a digital value for the sensed secondary-side voltage.

Abstract: A method includes forming an electrical connector over a substrate of a wafer, and molding a polymer layer, with at least a portion of the electrical connector molded in the polymer layer. A first sawing step is performed to form a trench in the polymer layer. After the first sawing step, a second sawing step is performed to saw the wafer into a plurality of dies.

Abstract: Some embodiments relate to a semiconductor device on a substrate. An interconnect structure is disposed over the semiconductor substrate. A first conductive pad is disposed over the interconnect structure. A second conductive pad is disposed over the interconnect structure and spaced apart from the first conductive pad. A third conductive pad is disposed over the interconnect structure and spaced apart from the first and second conductive pads. A first ESD protection element is electrically coupled between the first and second conductive pads. A first device under test (DUT) is electrically coupled between the first and third conductive pads.

Abstract: An isolated switched-mode power converter converts power from an input source into power for an output load. A digital controller senses a secondary-side voltage, such as a rectified voltage, of the power converter. The secondary-side voltage is divided down using a high-impedance voltage divider. The resultant divided-down voltage is provided to a voltage sensor within the digital controller. The voltage sensor level shifts the provided voltage, and buffers the resulting level-shifted voltage. The buffered, level-shifted voltage is provided to a tracking analog-to-digital converter (ADC) for digitization. The buffered signal provided to the tracking ADC has a high current capability, such that the voltage input to the tracking ADC may quickly converge before the tracking ADC outputs a digital value for the sensed secondary-side voltage.

Abstract: Some embodiments relate to a semiconductor device on a substrate. An interconnect structure is disposed over the substrate, and a first conductive pad is disposed over the interconnect structure. A second conductive pad is disposed over the interconnect structure and is spaced apart from the first conductive pad. A third conductive pad is disposed over the interconnect structure and is spaced apart from the first and second conductive pads. A fourth conductive pad is disposed over the interconnect structure and is spaced apart from the first, second, and third conductive pads. A first ESD protection element is electrically coupled between the first and second pads; and a second ESD protection element is electrically coupled between the third and fourth pads. A first device under test is electrically coupled between the first and third conductive pads; and a second device under test is electrically coupled between the second and fourth pads.

Abstract: An electronic device and the manufacturing method thereof are provided. The electronic device includes a semiconductor die, a conductive structure electrically coupled to the semiconductor die, an insulating encapsulant encapsulating the semiconductor die and the conductive structure, and a redistribution structure disposed on the insulating encapsulant and the semiconductor die. The conductive structure includes a first conductor, a second conductor, and a diffusion barrier layer between the first conductor and the second conductor. The redistribution structure is electrically connected to the semiconductor die and the first conductor of the conductive structure.

Abstract: A method includes forming an electrical connector over a substrate of a wafer, and molding a polymer layer, with at least a portion of the electrical connector molded in the polymer layer. A first sawing step is performed to form a trench in the polymer layer. After the first sawing step, a second sawing step is performed to saw the wafer into a plurality of dies.

Abstract: A semiconductor device is provided. The semiconductor device includes a base substrate, a die stacking unit, a number of dummy micro bumps, and an underfill material. The die stacking unit, which is mounted on the base substrate, includes a first die, a second die, and a number of first conductive joints. The first die and the second die are stacked on each other, and the first conductive joints are disposed between and connected to the first die and the second die. The dummy micro bumps, which are disposed between the first conductive joints, are connected to the first die but not to the second die. The underfill material is filled into a number of gaps between the base substrate, the first die, the second die, the first conductive joints, and the dummy micro bumps.

Abstract: Systems and methods are disclosed for the functional decomposition of the catalog domain and its sub-domains inside a global scale e-commerce system into respective software application services with dedicated data storage, so in order for the complex raw data of different nature or sub-domain that belongs to large catalogs to be easily accessed and read by online stores, it needs to be deciphered and derived by its domain specific computational process then materialized into appropriate real time content that can be directly obtained via software services and APIs by B2C and B2B websites instead having to utilize lots of computational power for every on line store page request to generate necessary real time content from the same raw catalog data that is administered by catalog managers. In the case of data that does not frequently change (i.e.

Abstract: A method includes forming an electrical connector over a substrate of a wafer, and molding a polymer layer, with at least a portion of the electrical connector molded in the polymer layer. A first sawing step is performed to form a trench in the polymer layer. After the first sawing step, a second sawing step is performed to saw the wafer into a plurality of dies.

Abstract: An angular position sensing device for detecting angular position of a rotor of a motor includes a first resolver that includes an annular rotor, an annular stator, a plurality of excitation coils and four induction coils. The annular stator has a stator annular body, and a plurality of stator magnetic poles. One of the annular rotor and the annular stator surrounds the other one of the annular rotor and the annular stator. The excitation coils are respectively wound on the stator magnetic poles of the annular stator. The induction coils are respectively wound on four of the stator magnetic poles.

Abstract: A voice control device includes a microphone module, a voice encoding module, a display and a processing unit. The voice encoding module is electrically connected to the microphone module. The processing unit is electrically connected to the voice encoding module and the display. The microphone module receives a voice signal and transmits the received voice signal to the voice encoding module. One of the voice encoding module and the processing unit analyzes and processes the voice signal to determine a sound source direction of the voice signal and obtains response information according to the voice signal. The processing unit controls the display to rotate to the sound source direction and transmits the response information to the display for displaying the response information.

Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle ?1, a second curve having a second angle ?2 and a third curve having a third angle ?3, wherein ?3>?2>?1 .

Abstract: A chip includes a first group of dummy bumps disposed at a top surface of the chip in a first corner of the chip, a second group of dummy bumps disposed at the top surface of the chip in a second corner of the chip, and active bump connectors disposed at the top surface of the chip. The chip also includes an outer seal ring disposed around a periphery of the chip, a first seal ring arrangement disposed around the first group of dummy bumps, and a second seal ring arrangement disposed around the second group of dummy bumps. The first seal ring arrangement and second seal ring arrangement are disposed in dielectric layers underlying the first and second groups of dummy bumps.

Abstract: A method and system for processing Domain Name Services (DNS) request in a gateway. The gateway receives a DNS request from a host from its local area network. The gateway then selects DNS server(s) and transmits a new DNS request to at least one DNS server(s). DNS server(s) may or may not be accessible through a first tunnel. The contents of the new DNS request are the same as the content of the received DNS request. Further, when the gateway receives a DNS response corresponding to the DNS request, it determines a decision whether to transfer data to the host whose IP address is specified in the DNS response through a second tunnel. The decision may be based on a geographical location of an IP address.

Abstract: Disclosed herein a sialyl donor and its use for the synthesis of gangliosides. The sialyl donor has the structure of, wherein, R1 and R2 are independently benzoyl, toluenesulfonyl, pivaloyl or acetyl optionally substituted with a halogen; and R3 is acetyl or —(O)CCH2OH. In one preferred embodiment, in the sialyl donor of formula (I), R is acetyl. Also disclosed herein is a method of synthesizing a sialoside. The method comprises steps of: coupling the sialyl donor of formula (I) with a glycosyl acceptor having a primary hydroxyl group in the presence of N-iodosuccinimide (NIS) and trifluoromethanesulfonic acid (TfOH) under suitable conditions; and isolating the sialoside, which has an ?-glycosidic linkage. According to preferred embodiments, the coupling is conducted in a solvent selected from the group consisting of, CH3CN, CH3Cl, and CH2Cl2 at a temperature between ?20° C. to ?60° C.

Abstract: A system for chassis management includes a plurality of motherboards of a chassis, a plurality of baseboard management controllers (BMCs), and at least one chassis level component. Each of the plurality of BMCs is associated with one of the plurality of motherboards. The plurality of BMCs are interconnected via a first communication bus. The plurality of BMCs and the at least one chassis level component are interconnected via a second communication bus. One BMC of the plurality of BMCs is configured to operate as a virtual chassis management controller (VCMC) for the chassis. The VCMC is configured to exchange data with other BMCs of the plurality of BMCs over the first communication bus and manage the at least one chassis level component over the second communication bus.