Abstract: A semiconductor device includes a first diode, a second diode, a clamp circuit and a third diode. The first diode is coupled between an input/output (I/O) pad and a first voltage terminal. The second diode is coupled with the first diode, the I/O pad and a second voltage terminal. The clamp circuit is coupled between the first voltage terminal and the second voltage terminal. The second diode and the clamp circuit are configured to direct a first part of an electrostatic discharge (ESD) current flowing between the I/O pad and the first voltage terminal. The third diode, coupled to the first voltage terminal, and the second diode include a first semiconductor structure configured to direct a second part of the ESD current flowing between the I/O pad and the first voltage terminal.

Abstract: In some embodiments, a semiconductor device is provided, including a first doped region of a first conductivity type configured as a first terminal of a first diode, a second doped region of a second conductivity type configured as a second terminal of the first diode, wherein the first and second doped regions are coupled to a first voltage terminal; a first well of the first conductivity type surrounding the first and second doped regions in a layout view; a third doped region of the first conductivity type configured as a first terminal, coupled to an input/output pad, of a second diode; and a second well of the second conductivity type surrounding the third doped region in the layout view. The second and third doped regions, the first well, and the second well are configured as a first electrostatic discharge path between the I/O pad and the first voltage terminal.

Abstract: A package structure includes a redistribution circuit structure, a wiring substrate, a semiconductor device, an insulating encapsulation, and a reinforcement structure. The redistribution circuit structure has a first surface and a second surface opposite to the first surface. The wiring substrate is disposed on the first surface of the redistribution circuit structure. The semiconductor device is disposed on the second surface of the redistribution circuit structure. The insulating encapsulation laterally encapsulates the wiring substrate. The reinforcement structure is directly in contact with the insulating encapsulation.

Abstract: A device is disclosed herein. The device includes an electrostatic discharge (ESD) detector, a bias generator, and an ESD driver including at least two transistors coupled to each other in series. The ESD detector is configured to detect an input signal and generate a detection signal in response to an ESD event being detected. The bias generator is configured to generate a bias signal according to the detection signal. The at least two transistors are controlled according to the bias signal and a logic control signal, and the input signal is applied across the at least two transistors.

Abstract: An illuminable decoration comprises at least two trunk sections, each trunk section includes a hollow tube and a cable assembly coupled to each trunk section. Each cable assembly comprises a first modular electrical connector end that has an inner socket and an outer plug that circumscribes the inner socket. Further, each cable assembly comprises a second modular electrical connector end that has an inner plug and an outer socket that circumscribes the inner plug. A first electrical wire electrically couples between the inner socket of the first modular electrical connector and the inner plug of the second modular electrical connector. Also, a second electrical wire electrically couples between the outer plug of the first modular electrical connector and the outer socket of the second modular electrical connector. When two trunk sections are assembled together end-to-end, the trunk sections are mechanically and electrically coupled to form a modular electrical distribution system.

Abstract: A package structure includes a package substrate, a first semiconductor package and a second semiconductor package, an underfill material, a gap filling structure and a heat dissipation structure. The first semiconductor package and the second semiconductor package are electrically bonded to the package substrate. The underfill material is disposed to fill a first space between the first semiconductor package and the package substrate and a second space between the second semiconductor package and the package substrate. The gap filling structure is disposed over the package substrate and in a first gap laterally between the first semiconductor package and the second semiconductor package. The heat dissipation structure is disposed on the package substrate and attached to the first semiconductor package and the second semiconductor package through a thermal conductive layer.

Abstract: Systems and methods for fast merging of panelist activity are disclosed. The system can maintain a plurality of panelist identifiers each stored with a respective plurality of offline content events, and identify, from the plurality of panelist identifiers, a subset of panelist identifiers that are stored with a respective offline content event that matches a target offline content event. The system can map each of the subset to a respective plurality of unique identifiers corresponding to virtual devices having virtual device attributes. The system can reduce, for each of the subset, the respective plurality of unique identifiers to a sketch that represents the respective plurality of unique identifiers. The system can combine the sketch of each of the subset of panelist identifiers into an aggregated sketch, and transmit the aggregated sketch to a computing device for analysis with an aggregated sketch representing online content events.

Abstract: A semiconductor device includes a first diode, a second diode, a clamp circuit and a third diode. The first diode is coupled between an input/output (I/O) pad and a first voltage terminal. The second diode is coupled with the first diode, the I/O pad and a second voltage terminal. The clamp circuit is coupled between the first voltage terminal and the second voltage terminal. The second diode and the clamp circuit are configured to direct a first part of an electrostatic discharge (ESD) current flowing between the I/O pad and the first voltage terminal. The third diode, coupled to the first voltage terminal, and the second diode include a first semiconductor structure configured to direct a second part of the ESD current flowing between the I/O pad and the first voltage terminal.

Abstract: An illuminable decoration comprises at least two trunk sections, each trunk section includes a hollow tube and a cable assembly coupled to each trunk section. Each cable assembly comprises a first modular electrical connector end that has an inner socket and an outer plug that circumscribes the inner socket. Further, each cable assembly comprises a second modular electrical connector end that has an inner plug and an outer socket that circumscribes the inner plug. A first electrical wire electrically couples between the inner socket of the first modular electrical connector and the inner plug of the second modular electrical connector. Also, a second electrical wire electrically couples between the outer plug of the first modular electrical connector and the outer socket of the second modular electrical connector. When two trunk sections are assembled together end-to-end, the trunk sections are mechanically and electrically coupled to form a modular electrical distribution system.

Abstract: A package structure includes a redistribution circuit structure, a wiring substrate, a semiconductor device, an insulating encapsulation, and a reinforcement structure. The redistribution circuit structure has a first surface and a second surface opposite to the first surface. The wiring substrate is disposed on the first surface of the redistribution circuit structure. The semiconductor device is disposed on the second surface of the redistribution circuit structure. The insulating encapsulation laterally encapsulates the wiring substrate. The reinforcement structure is directly in contact with the insulating encapsulation.

Abstract: A device is disclosed herein. The device includes an electrostatic discharge (ESD) detector, a bias generator, and an ESD driver including at least two transistors coupled to each other in series. The ESD detector is configured to detect an input signal and generate a detection signal in response to an ESD event being detected. The bias generator is configured to generate a bias signal according to the detection signal. The at least two transistors are controlled according to the bias signal and a logic control signal, and the input signal is applied across the at least two transistors.

Abstract: A package structure including a wiring substrate, conductive terminals, an insulating encapsulation, a redistribution circuit structure, guiding patterns and a semiconductor device. The conductive terminals are disposed on a surface of the wiring substrate. The insulating encapsulation laterally encapsulates the wiring substrate and the conductive terminals. The redistribution circuit structure is disposed on the insulating encapsulation and the conductive terminals, and the redistribution circuit structure is electrically connected to the wiring substrate through the conductive terminals. The guiding patterns are disposed between the wiring substrate and the redistribution circuit structure, and the guiding patterns are in contact with and encapsulated by the insulating encapsulation.

Abstract: A structure including a first semiconductor die, an interposer and a first insulating encapsulation is provided. The first semiconductor die includes a semiconductor substrate, an interconnect structure disposed on the semiconductor substrate and conductive vias disposed on the interconnect structure. The interposer includes a dielectric layer and through vias penetrating through the dielectric layer. The first insulating encapsulation laterally encapsulates the first semiconductor die and the interposer, wherein a thickness of the dielectric layer of the interposer substantially equals to a thickness of the first semiconductor die and a thickness of the first insulating encapsulation.

Abstract: A method of fabricating a semiconductor device is provided, including providing a base substrate and a die stacking unit mounted on the base substrate. Conductive joints are connected between two adjacent dies of the die stacking unit. The method further includes providing dummy micro bumps and dummy pads between the two adjacent dies and between the conductive joints. The dummy micro bumps and the dummy pads are connected to one of the two adjacent dies but not to the other, and the dummy micro bumps are formed on some of the dummy pads but not on all of the dummy pads. In addition, the method includes filling the gaps between the base substrate, all dies of the die stacking unit, the conductive joints, the dummy micro bumps, and the dummy pads with an underfill material by capillary attraction.

Abstract: Methods, systems, and computer readable medium for reducing inconsistencies in output between an original model and a new model. The method includes receiving an original model and a new model, mapping structures of the new model to structures of the original model, classifying each structure of the new model as belonging to a group of the original model, an unused group not in the original model, a subset of a group of the original model, or a merged set of a first and a second, different group of the original model, generating a merged model based on the mapping and classifying, and classifying a unique entities, using the merged model, by applying consistent hashing to each of the unique entities.

Abstract: A package structure includes a circuit substrate and a semiconductor package. The semiconductor package is disposed on the circuit substrate, and includes a plurality of semiconductor dies, an insulating encapsulant and a connection structure. The insulating encapsulant comprises a first portion and a second portion protruding from the first portion, the first portion is encapsulating the plurality of semiconductor dies and has a planar first surface, and the second portion has a planar second surface located at a different level than the planar first surface. The connection structure is located over the first portion of the insulating encapsulant on the planar first surface, and located on the plurality of semiconductor dies, wherein the connection structure is electrically connected to the plurality of semiconductor dies and the circuit substrate.

Abstract: A semiconductor package includes a first integrated circuit structure, a second integrated circuit structure, a plurality of conductive bumps, an encapsulating material, and a redistribution structure. The first integrated circuit structure includes an active surface having a plurality of contact pads, a back surface opposite to the active surface, and a plurality of through vias extending through the first integrated circuit structure and connecting the active surface and the back surface. The second integrated circuit structure is disposed on the back surface of the first integrated circuit structure. The conductive bumps are disposed between the first integrated circuit structure and the second integrated circuit structure, and electrically connecting the plurality of through vias and the second integrated circuit structure. The encapsulating material at least encapsulates the second integrated circuit structure.

Abstract: A semiconductor device is provided. The semiconductor device includes a base substrate, a die stacking unit, a number of dummy micro bumps, and an underfill material. The die stacking unit, which is mounted on the base substrate, includes a first die, a second die, and a number of first conductive joints. The first die and the second die are stacked on each other, and the first conductive joints are disposed between and connected to the first die and the second die. The dummy micro bumps, which are disposed between the first conductive joints, are connected to the first die but not to the second die. The underfill material is filled into a number of gaps between the base substrate, the first die, the second die, the first conductive joints, and the dummy micro bumps.

Abstract: A package structure is provided. The package structure includes a substrate and a stack of semiconductor dies over the substrate. The package structure also includes an underfill element covering sidewalls of the semiconductor dies. The package structure further includes a protective film attached to the substrate and laterally surrounding the underfill element and the semiconductor dies. The underfill element separates the protective film from the semiconductor dies.

Abstract: A package structure including a wiring substrate, conductive terminals, an insulating encapsulation, a redistribution circuit structure, guiding patterns and a semiconductor device. The conductive terminals are disposed on a surface of the wiring substrate. The insulating encapsulation laterally encapsulates the wiring substrate and the conductive terminals. The redistribution circuit structure is disposed on the insulating encapsulation and the conductive terminals, and the redistribution circuit structure is electrically connected to the wiring substrate through the conductive terminals. The guiding patterns are disposed between the wiring substrate and the redistribution circuit structure, and the guiding patterns are in contact with and encapsulated by the insulating encapsulation.