Patents by Inventor Fu Wang

Fu Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF
    Publication number: 20230027508
    Abstract: Provided are a resistive random access memory (RRAM) and a manufacturing method thereof. The resistive random access memory includes multiple unit structures disposed on a substrate. Each of the unit structures includes a first electrode, a first metal oxide layer, and a spacer. The first electrode is disposed on the substrate. The first metal oxide layer is disposed on the first electrode. The spacer is disposed on sidewalls of the first electrode and the first metal oxide layer. In addition, the resistive random access memory includes a second metal oxide layer and a second electrode. The second metal oxide layer is disposed on the unit structures and is connected to the unit structures. The second electrode is disposed on the second metal oxide layer.
    Type: Application
    Filed: August 6, 2021
    Publication date: January 26, 2023
    Applicant: United Microelectronics Corp.
    Inventors: Kai Jiun Chang, Chun-Hung Cheng, Chuan-Fu Wang
  • RESISTIVE RANDOM-ACCESS MEMORY (RRAM) DEVICE AND FORMING METHOD THEREOF
    Publication number: 20230019178
    Abstract: A resistive random-access memory (RRAM) device, including a bottom electrode, a high work function layer, a resistive material layer and a top electrode sequentially stacked on a substrate, wherein the resistive material layer includes a bottom part and a top part, first spacers covering sidewalls of the top part and the top electrode, and second spacers covering sidewalls of the bottom part, thereby constituting a RRAM cell.
    Type: Application
    Filed: September 27, 2022
    Publication date: January 19, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Shu-Hung Yu, Chun-Hung Cheng, Chuan-Fu Wang
  • RESISTIVE RANDOM-ACCESS MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    Publication number: 20230020564
    Abstract: Provided is a resistive random-access memory device, including a dielectric layer located on a substrate, a first electrode which is a column located on the dielectric layer, a second electrode covering a top surface and a sidewall of the first electrode, and a variable resistance layer sandwiched between the top surface of the first electrode and the second electrode and between the sidewall of the first electrode and the second electrode and located between the second electrode and the dielectric layer.
    Type: Application
    Filed: August 17, 2021
    Publication date: January 19, 2023
    Applicant: United Microelectronics Corp.
    Inventors: Wen-Jen Wang, Chun-Hung Cheng, Chuan-Fu Wang
  • ACCESSORY FOR HANDHELD DEVICE
    Publication number: 20230009175
    Abstract: The present disclosure provides an accessory for a handheld device. The accessory includes a first base, a second base, a first flexible element and a second flexible element. The first flexible element and the second flexible element are respectively disposed at the first base. The first flexible element has a first track. The second flexible element has a second track. The second base has a fastener for engaging with the first track and the second track. The first flexible element is flexed based on sliding of the fastener along the first track. The second flexible element is flexed based on sliding of the fastener along the second track.
    Type: Application
    Filed: September 16, 2022
    Publication date: January 12, 2023
    Inventors: CHING-FU WANG, JUI-CHEN LU, PO-WEN HSIAO, CHIA-HO LIN
  • SEMICONDUCTOR DEVICE AND METHOD
    Publication number: 20230008413
    Abstract: A method includes forming a fin protruding from a semiconductor substrate; forming a dummy gate stack over the fin, wherein forming the dummy gate stack includes depositing a layer of amorphous material over the fin; performing an anneal process on the layer of amorphous material, wherein the anneal process recrystallizes the layer of amorphous material into a layer of polycrystalline material, wherein the anneal process includes heating the layer of amorphous material for less than one millisecond; and patterning the layer of polycrystalline material; and forming an epitaxial source/drain region in the fin adjacent the dummy gate stack; and removing the dummy gate stack and replacing the dummy gate stack with a replacement gate stack.
    Type: Application
    Filed: February 16, 2022
    Publication date: January 12, 2023
    Inventors: Po-Kang Ho, Kuo-Ju Chen, Wei-Ting Chang, Wei-Fu Wang, Li-Ting Wang, Huicheng Chang, Yee-Chia Yeo, Yi-Chao Wang, Tsai-Yu Huang
  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20230005795
    Abstract: A method for fabricating a semiconductor device includes the steps of forming a metal gate on a substrate, a spacer around the metal gate, and a first interlayer dielectric (ILD) layer around the spacer, performing a plasma treatment process to transform the spacer into a first bottom portion and a first top portion, performing a cleaning process to remove the first top portion, and forming a second ILD layer on the metal gate and the first ILD layer.
    Type: Application
    Filed: August 3, 2021
    Publication date: January 5, 2023
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Yi-Fan Li, Po-Ching Su, Yu-Fu Wang, Min-Hua Tsai, Ti-Bin Chen, Chih-Chiang Wu, Tzu-Chin Wu
  • Method for manufacturing a resistive random access memory structure
    Patent number: 11538990
    Abstract: A method for forming a resistive random access memory structure. The resistive random access memory structure includes a bottom electrode; a variable resistance layer disposed on the bottom electrode; a top electrode disposed on the variable resistance layer; a protection layer surrounding the variable resistance layer, wherein a top surface of the protection layer and a top surface of the top electrode are coplanar; and an upper interconnect structure disposed on the top electrode, wherein the upper interconnect structure is electrically connected to the top electrode and directly contacts a sidewall of the protection layer.
    Type: Grant
    Filed: July 9, 2021
    Date of Patent: December 27, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Wen-Jen Wang, Chun-Hung Cheng, Chuan-Fu Wang
  • RESISTIVE RANDOM-ACCESS MEMORY (RRAM) DEVICE AND FORMING METHOD THEREOF
    Publication number: 20220399495
    Abstract: A RRAM device includes a bottom electrode, a resistive material layer, a high work function layer, a top electrode, a hard mask and high work function sidewall parts. The bottom electrode, the resistive material layer, the high work function layer, the top electrode and the hard mask are sequentially stacked on a substrate. The high work function sidewall parts cover sidewalls of the top electrode and sidewalls of the hard mask, thereby constituting a RRAM cell. A method of forming said RRAM device is also provided.
    Type: Application
    Filed: July 19, 2021
    Publication date: December 15, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Wen-Jen Wang, Chun-Hung Cheng, Chuan-Fu Wang
  • SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
    Publication number: 20220359618
    Abstract: A semiconductor device includes a substrate having a memory region and a logic region. A first dielectric layer is disposed on the substrate. A first conductive structure and a second conductive structure are respectively formed in the first dielectric layer on the memory region and the logic region. A memory cell is formed on the first dielectric layer and directly contacts a top surface of the first conductive structure. A first cap layer continuously covers a top surface and a sidewall of the memory cell and directly contacts a top surface of the second conductive structure. A second dielectric layer is formed on the first cap layer. A third conductive structure penetrates through the second dielectric layer and the first cap layer to contact the memory cell.
    Type: Application
    Filed: July 21, 2022
    Publication date: November 10, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Wen-Jen Wang, Chun-Hung Cheng, Chuan-Fu Wang
  • Accessory for handheld device
    Patent number: 11486532
    Abstract: The present disclosure provides an accessory for a handheld device. The accessory includes a first base, a second base, a first flexible element and a second flexible element. The first flexible element and the second flexible element are respectively disposed at the first base. The first flexible element has a first track. The second flexible element has a second track. The second base has a fastener for engaging with the first track and the second track. The first flexible element is flexed based on sliding of the fastener along the first track. The second flexible element is flexed based on sliding of the fastener along the second track.
    Type: Grant
    Filed: September 8, 2021
    Date of Patent: November 1, 2022
    Assignee: EVOLUTIVE LABS CO., LTD.
    Inventors: Ching-Fu Wang, Jui-Chen Lu, Po-Wen Hsiao, Chia-Ho Lin
  • Resistive random-access memory (RRAM) device and forming method thereof
    Patent number: 11489114
    Abstract: A resistive random-access memory (RRAM) device includes a bottom electrode, a high work function layer, a resistive material layer, a top electrode and high work function spacers. The bottom electrode, the high work function layer, the resistive material layer and the top electrode are sequentially stacked on a substrate, wherein the resistive material layer includes a bottom part and a top part. The high work function spacers cover sidewalls of the bottom part, thereby constituting a RRAM cell. The present invention also provides a method of forming a RRAM device.
    Type: Grant
    Filed: March 25, 2021
    Date of Patent: November 1, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shu-Hung Yu, Chun-Hung Cheng, Chuan-Fu Wang
  • CONNECTING APPARATUS
    Publication number: 20220341451
    Abstract: A connecting apparatus includes a main body having a first half member and a second half member; the second ends of the two half members configured to open or close relatively to each other; an accommodating cavity formed between the first and second half members; a driving member and an actuating member installed inside the accommodating cavity; the driving member capable of driving the actuating member to move toward the second ends of the two half members to an opened position, thereby expanding the second ends of the two half members outward. The connecting apparatus is installed inside an elongated member, and latch portions on the second ends of the two half members are able to latch onto another elongated member to achieve a connection between elongated members.
    Type: Application
    Filed: April 23, 2021
    Publication date: October 27, 2022
    Inventor: Chuan-Fu WANG
  • MEMORY DEVICES AND METHODS OF FORMING THE SAME
    Publication number: 20220336738
    Abstract: A method of forming a memory device includes the following operations. A first conductive plug is formed within a first dielectric layer over a substrate. A treating process is performed to transform a portion of the first conductive plug into a buffer layer, and the buffer layer caps the remaining portion of the first conductive plug. A phase change layer and a top electrode are sequentially formed over the buffer layer. A second dielectric layer is formed to encapsulate the top electrode and the underlying phase change layer. A second conductive plug is formed within the second dielectric layer and in physical contact with the top electrode. A filamentary bottom electrode is formed within the buffer layer.
    Type: Application
    Filed: July 9, 2021
    Publication date: October 20, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Li Chiang, Jer-Fu Wang, Chao-Ching Cheng, Tzu-Chiang Chen
  • Protection case assembly for handheld device
    Patent number: 11444650
    Abstract: The present disclosure provides a protection case assembly for a handheld device. The protection case assembly includes a main case and a frame. The main case has an accommodating space configured to accommodate the handheld device, and an opening disposed correspondingly to a lens module of the handheld device. The frame is detachably disposed in the opening, and includes a groove set configured to receive the main case in the opening.
    Type: Grant
    Filed: July 13, 2020
    Date of Patent: September 13, 2022
    Assignee: EVOLUTIVE LABS CO., LTD.
    Inventors: Ching-Fu Wang, Sheng-Che Su, Po-Wen Hsiao, Chia-Ho Lin
  • Semiconductor device and method for forming the same
    Patent number: 11437436
    Abstract: A semiconductor device includes a substrate having a memory region and a logic region. A first dielectric layer is disposed on the substrate. A first conductive structure and a second conductive structure are formed in the first dielectric layer and respectively on the memory region and the logic region of the substrate. A memory cell is disposed on the first dielectric layer and directly contacts a top surface of the first conductive structure. A first cap layer is formed on the first dielectric layer and continuously covers a top surface and a sidewall of the memory cell and a top surface of the second conductive structure. A second dielectric layer is formed on the first cap. A third conductive structure is formed in the second dielectric layer and penetrates through the first cap layer to contacts the memory cell.
    Type: Grant
    Filed: October 29, 2020
    Date of Patent: September 6, 2022
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Wen-Jen Wang, Chun-Hung Cheng, Chuan-Fu Wang
  • RESISTIVE RANDOM-ACCESS MEMORY (RRAM) DEVICE AND FORMING METHOD THEREOF
    Publication number: 20220271223
    Abstract: A resistive random-access memory (RRAM) device includes a bottom electrode, a high work function layer, a resistive material layer, a top electrode and high work function spacers. The bottom electrode, the high work function layer, the resistive material layer and the top electrode are sequentially stacked on a substrate, wherein the resistive material layer includes a bottom part and a top part. The high work function spacers cover sidewalls of the bottom part, thereby constituting a RRAM cell. The present invention also provides a method of forming a RRAM device.
    Type: Application
    Filed: May 11, 2022
    Publication date: August 25, 2022
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Shu-Hung Yu, Chun-Hung Cheng, Chuan-Fu Wang
  • RESISTIVE RANDOM-ACCESS MEMORY (RRAM) DEVICE AND FORMING METHOD THEREOF
    Publication number: 20220271222
    Abstract: A resistive random-access memory (RRAM) device includes a bottom electrode, a high work function layer, a resistive material layer, a top electrode and high work function spacers. The bottom electrode, the high work function layer, the resistive material layer and the top electrode are sequentially stacked on a substrate, wherein the resistive material layer includes a bottom part and a top part. The high work function spacers cover sidewalls of the bottom part, thereby constituting a RRAM cell. The present invention also provides a method of forming a RRAM device.
    Type: Application
    Filed: March 25, 2021
    Publication date: August 25, 2022
    Inventors: Shu-Hung Yu, Chun-Hung Cheng, Chuan-Fu Wang
  • Protection casing assembly for wearable device
    Patent number: 11422507
    Abstract: The present disclosure provides a protection casing assembly for a wearable device. The protection casing assembly includes a main case and a frame. The main case has a first accommodation space and configured to allow a wearable device to be disposed detachably. When the wearable device is disposed in the first accommodation space, the wearable device and the main case define a second accommodation space adjacent to at a device surface of the wearable device. The frame is detachably disposed in the second accommodation space.
    Type: Grant
    Filed: October 2, 2019
    Date of Patent: August 23, 2022
    Assignee: EVOLUTIVE LABS CO., LTD.
    Inventors: Ching-Fu Wang, Sheng-Che Su, Po-Wen Hsiao, Chia-Ho Lin
  • Platinum complex, nitrogen-containing bidentate chelate, and apparatus for providing visible emission or near-infrared emission
    Patent number: 11414447
    Abstract: Provided is a platinum complex having a structure represented by formula (I): wherein A1 to A3 each independently represent a 5-membered or 6-membered unsaturated ring, A3 is optionally formed between A1 and A2; X1, X2, and X3 each independently represent carbon or nitrogen; R1 represents hydrogen, substituted or unsubstituted C1-C6 alkyl, —CF2H, —CFH2, substituted or unsubstituted C6-C12 aryl or —CmF2m+1, m is an integer of 1 to 5; R2 and R3 each independently represent hydrogen, C1-C12 alkyl, substituted or unsubstituted C1-C6 alkoxyl, substituted or unsubstituted C6-C12 aryl, or —CnF2n+1, n is an integer of 0 to 3; p and q each independently represent an integer of 1 to 2; and when p or q is equal to 2, two R2's or R3's may join to form a C3-C8 aromatic or nitrogen-containing heteroaromatic ring.
    Type: Grant
    Filed: January 14, 2021
    Date of Patent: August 16, 2022
    Assignees: National Tsing Hua University, City of University of Hong Kong
    Inventors: Yun Chi, Sheng-Fu Wang, Li-Wen Fu
  • Back cover for a bumper case
    Patent number: D972546
    Type: Grant
    Filed: December 3, 2018
    Date of Patent: December 13, 2022
    Assignee: EVOLUTIVE LABS CO., LTD.
    Inventor: Ching-Fu Wang