Abstract: A junction field effect transistor includes a substrate and a gate region having a first conductive type in the substrate. Source/drain regions of a second conductive type opposite to the first conductive type are disposed in the substrate on opposite sides of the gate region. A pair of high-voltage well regions of the second conductive type are disposed beneath the source/drain regions. A channel region is provided beneath the gate region and between the pair of high-voltage well regions. The channel region is of the second conductive type and has a dopant concentration lower than that of the pair of high-voltage well regions.

Abstract: An ultra-high voltage device is provided. The ultra-high voltage device includes a substrate, a first well zone formed in the substrate, a second well zone having a surface formed in the substrate adjacent to the first well zone, a gate oxide formed on the first well zone and the second well zone of the substrate, a gate formed on the gate oxide, a channel formed in the first well zone underneath the gate oxide, an accumulation region formed in the second well zone underneath the gate oxide adjacent to the channel, wherein only a part of the accumulation region is implanted with a dopant to form an implant region therein, and an insulation region formed on the surface of the second well zone of the substrate adjacent to the accumulation region, wherein a boundary is formed between the insulation region and the accumulation region.

Abstract: A probe card having a configurable structure for exchanging/swapping electronic components for impedance matching is provided. In the probe card, an applied force is exerted on the electronic component so as to make the electronic component electrically connected with at least one conductive contact pad of a supporting unit. The supporting unit is a circuit board or a space transformer. In order to facilitate the exchange or swap of the electronic component, the applied force can be removed. The probe card includes a pressing plate which can be moved between a pressing position and a non-pressing position. The pressing plate has a pressing surface which is contacted with the top end of the electronic component while the pressing plate is in the pressing position. Therefore, the applied force can be generated or removed by changing the positioning of the pressing plate.

Abstract: An ultra-high voltage device is provided. The ultra-high voltage device includes a substrate, a first well zone formed in the substrate, a second well zone formed in the substrate adjacent to the first well zone, a gate oxide layer formed on the first well zone and the second well zone, a gate formed on the gate oxide layer, an insulation region formed on the surface of the second well zone, a first implant region formed in the second well zone underneath the insulation region, a second implant region formed below the first implant region, and a junction formed between the first implant region and the second implant region. At least one of the first implant region and the second implant region includes at least two sub-implant regions having different implant concentrations. The sub-implant region having the higher implant concentration is adjacent to the junction.

Abstract: A high-frequency cantilever type probe card includes a base board, a probe base provided on the base board, two probes, and a capacitor having opposite ends electrically connected to the probes respectively. The probe base is made of an insulating material, and the probes are made of a conductive material. Each of the probes has an arm and a tip, wherein the arm is connected to the probe base, and the tip is adapted to contact a pad of a DUT. When the DUT generates a testing signal with a high frequency, and the testing signal is transmitted to one of the probes, the capacitor, and the other one of the probes in sequence, and then transmitted back to the DUT.

Abstract: A method, system and computer-readable medium for assessing a disease condition of a cancer of a subject, including: receiving a blood sample from the subject; isolating a plurality of circulating tumor cells (CTCs) from the blood sample; measuring at least one of cell or cell nucleus sizes of each of the plurality of CTCs; determining a measured CTC size distribution of the plurality of CTCs based on the measuring; comparing the measured CTC size distribution to a reference CTC size distribution using a computer; and assigning the disease condition of the cancer of the subject based on the comparing.

Abstract: A high-voltage semiconductor structure including a substrate, a first doped region, a well, a second doped region, a third doped region, a fourth doped region, and a gate structure is provided. The substrate has a first conductive type. The first doped region has the first conductive type and is formed in the substrate. The well has a second conductive type and is formed in the substrate. The second doped region has the second conductive type and is formed in the first doped region. The third doped region has the first conductive type and is formed in the well. The fourth doped region has the second conductive type and is formed in the well. The gate structure is disposed over the substrate and partially covers the first doped region and the well.

Abstract: A high-voltage semiconductor structure including a substrate, a first doped region, a well, a second doped region, a third doped region, a fourth doped region, and a gate structure is provided. The substrate has a first conductive type. The first doped region has the first conductive type and is formed in the substrate. The well has a second conductive type and is formed in the substrate. The second doped region has the second conductive type and is formed in the first doped region. The third doped region has the first conductive type and is formed in the well. The fourth doped region has the second conductive type and is formed in the well. The gate structure is disposed over the substrate and partially covers the first doped region and the well.

Abstract: A multilayer circuit board includes a first substrate and a second substrate in stack. The first substrate is provided with two first pads, two second pads, and two first sub-circuits. The first pads and the second pads are electrically connected to the first sub-circuits. The second substrate has a top surface, a bottom surface, a lateral edge, and two openings. The bottom surface of the second substrate is attached to the top surface of the first substrate. The openings extend from the top surface to the bottom surface of the second substrate. The first pads of the first substrate are in the opening of the second substrate; the second pads of the first substrate are not covered by the second substrate. The second substrate is further provided with a pad on the top surface and a second sub-circuit electrically connected to the pad of the second substrate.

Abstract: A probe module includes a base adapted to be fixed to a tester, an engaging seat engaged with the base, a signal connector, an electrical signal transmitting member, and two probes located below the engaging seat. The engaging seat has an engaging opening and a first end surface. The signal connector is provided in the engaging opening, and has a signal conductive portion and a conductive ground. A signal wire and a ground layer of the electrical signal transmitting member are electrically connected to the signal conductive portion and the conductive ground, respectively. The probes are electrically connected to the signal wire and the ground layer, respectively. The probes extend out of a first extending reference plane of the first end surface. Alternatively, a reflector is used to reflect an image of the probes upward. Whereby, a length of the electrical signal transmitting member can be further shortened.

Abstract: A multilayer circuit board includes a plurality of stacked substrates, a plurality of first conductive lands, and a plurality of second conductive lands. A surface at a side of each of the substrates has an exposed portion which is not covered by the neighboring substrate, wherein each of the first conductive lands is respectively provided on each of the exposed portions. Each of the second conductive lands is provided on the exposed portion of the outermost substrate, wherein each of the substrates has a conductor pattern to be electrically connected to one of the first conductive lands and to one of the second conductive lands.

Abstract: A semiconductor device is provided. The device includes a substrate having a first conductivity type. The device further includes a drain region, a source region, and a well region disposed in the substrate. The well region is disposed between the drain region and the source region and having a second conductivity type opposite to the first conductivity type. The device further includes a plurality of doped regions disposed within the well region. The doped regions are vertically and horizontally offset from each other. Each of the doped regions includes a lower portion having the first conductivity type, and an upper portion stacked on the lower region and having the second conductivity type.

Abstract: A multilayer circuit board includes a first substrate and a second substrate in stack. The first substrate is provided with a first pad, a second pad, and a first sub-circuit. The first pad and the second pad are electrically connected to the first sub-circuit. The second substrate has a top surface, a bottom surface, and an opening. The bottom surface of the second substrate is attached to the top surface of the first substrate. The opening extends from the top surface to the bottom surface of the second substrate. The first pad of the first substrate is in the opening of the second substrate; the second pad of the first substrate is not covered by the second substrate. The second substrate further provided with a pad on the top surface and a second sub-circuit electrically connected to the pad of the second substrate.

Abstract: A high-side circuit, adapted for a switched-mode converter, includes a level shifter, a high-side driver, a high-side transistor, a capacitor, and an active diode. The level shifter receives a first signal to generate a set signal. The high-side driver is supplied by a bootstrap voltage of a bootstrap node and a floating reference voltage of a floating reference node, which controls the high-side transistor to provide an input voltage to the floating reference node according to the set signal. The capacitor is coupled between the bootstrap node and the floating reference node. The active diode provides a supply voltage to the bootstrap node. When the bootstrap voltage exceeds the supply voltage, the active diode isolates the supply voltage from the bootstrap node according to a control voltage. The active diode includes a first-type well coupled to the bootstrap node, where the high-side driver is disposed.

Abstract: A switch-mode converter includes a high-side driver, a high-side transistor, a low-side driver, a low-side transistor, a capacitor, and an active diode. The high-side driver is supplied by the bootstrap voltage of the bootstrap node and a floating reference voltage of a floating reference node, and generates the high-side output signal. The high-side transistor provides an input voltage to the floating reference node according to the high-side output signal. The low-side driver generates the low-side output signal. The low-side transistor couples the floating reference node to a ground according to the low-side output signal. The capacitor is coupled between the bootstrap node and the floating reference node. The active diode provides the supply voltage to the bootstrap node. When the bootstrap voltage exceeds the supply voltage, the active diode isolates the supply voltage from the bootstrap node.

Abstract: A high-side circuit, adapted for a switched-mode converter, includes a level shifter, a high-side driver, a high-side transistor, a capacitor, and an active diode. The level shifter receives a first signal to generate a set signal. The high-side driver is supplied by a bootstrap voltage of a bootstrap node and a floating reference voltage of a floating reference node, which controls the high-side transistor to provide an input voltage to the floating reference node according to the set signal. The capacitor is coupled between the bootstrap node and the floating reference node. The active diode provides a supply voltage to the bootstrap node. When the bootstrap voltage exceeds the supply voltage, the active diode isolates the supply voltage from the bootstrap node according to a control voltage. The active diode includes a first-type well coupled to the bootstrap node, where the high-side driver is disposed.

Abstract: An ultra-low power transmitter applied in multi-channel frequency shift keying (FSK) communication is provided. The transmitter includes a fixed-frequency generation device, a low-frequency frequency synthesizer, and an injection locking device. The fixed-frequency generation device provides a reference frequency to the low-frequency frequency synthesizer. The frequency synthesizer divides the reference frequency with corresponding divisors for generating a plurality of divided frequency signals. Then, the divided frequency signals are injected into the injection locking device. The injection locking device will lock at the average frequency of previously mentioned divided frequencies. Wherein, the injection locking device filters the high frequency noise, which is produced by the frequency synthesizer, at the time of the injection locking. The ultra-low power transmitter obtains a high-frequency transmitted signal by using the frequency-locked signal.

Abstract: A semiconductor device is provided. The device includes a substrate having a first conductivity type. The device further includes a drain region, a source region, and a well region disposed in the substrate. The well region is disposed between the drain region and the source region and having a second conductivity type opposite to the first conductivity type. The device further includes a plurality of doped regions disposed within the well region. The doped regions are vertically and horizontally offset from each other. Each of the doped regions includes a lower portion having the first conductivity type, and an upper portion stacked on the lower region and having the second conductivity type.

Abstract: A multilayer circuit board includes a first substrate and a second substrate in stack. The first substrate has a first pad, and a first circuit, wherein the first circuit is embedded in the first substrate, and the first pad is electrically connected to the first circuit. The second substrate has a first through hole, a second pad, and a second circuit, wherein the first through hole is opened at both sides of the second substrate, and the first pad of the first substrate is in the first through hole; the second circuit is embedded in the second substrate, and the second pad is electrically connected to the second circuit. The pads on each substrate are exposed by the through hole(s) of the above substrate(s) to shorten the null sections of the interconnectors and reduce the interference from the null sections.

Abstract: A probe module, which supports loopback test and is provided between a PCB and a DUT, includes an adapter, two probes, two inductive components provided at the adapter, and a capacitive component. The adapter has two connecting circuits. An end of each of the probes is connected to one of the connecting circuits, while another end thereof, which is a tip, contacts the DUT. Each of the inductive components has an end electrically connected to one of the connecting circuits, and another end electrically connected to the PCB through a conductive member, which is provided at the adapter, wherein two ends of the capacitive component are electrically connected to one of the connecting circuits, respectively. Whereby, the signal paths are changed by the differences between frequencies of signals, and the transmission path of high-frequency signals is effectively shortened.