Abstract: According to one example, a semiconductor device includes a substrate and a fin stack that includes a plurality of nanostructures, a gate device surrounding each of the nanostructures, and inner spacers along the gate device and between the nanostructures. A width of the inner spacers differs between different layers of the fin stack.

Abstract: A semiconductor device includes a first dielectric layer, a stack of semiconductor layers disposed over the first dielectric layer, a gate structure wrapping around each of the semiconductor layers and extending lengthwise along a direction, and a dielectric fin structure and an isolation structure disposed on opposite sides of the stack of semiconductor layers and embedded in the gate structure. The dielectric fin structure has a first width along the direction smaller than a second width of the isolation structure along the direction. The isolation structure includes a second dielectric layer extending through the gate structure and the first dielectric layer, and a third dielectric layer extending through the first dielectric layer and disposed on a bottom surface of the gate structure and a sidewall of the first dielectric layer.

Abstract: Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary semiconductor structure according to the present disclosure includes a substrate having a p-type well or an n-type well, a first base portion over the p-type well, a second base portion over the n-type well, a first plurality of channel members over the first base portion, a second plurality of channel members over the second base portion, an isolation feature disposed between the first base portion and the second base portion, and a deep isolation structure in the substrate disposed below the isolation feature.

Abstract: A device includes: a stack of semiconductor nanostructures; a gate structure wrapping around the semiconductor nanostructures, the gate structure extending in a first direction; a source/drain region abutting the gate structure and the stack in a second direction transverse the first direction; a contact structure on the source/drain region; a backside conductive trace under the stack, the backside conductive trace extending in the second direction; a first through via that extends vertically from the contact structure to a top surface of the backside dielectric layer; and a gate isolation structure that abuts the first through via in the second direction.

Abstract: A computer-implemented method of automated design for a vibration-based energy harvesting system for a host structure includes receiving acceleration signals obtained from one or more accelerometers attached to the host structure, determining dominating acceleration frequencies of the host structure from the received acceleration signals, determining a degree-of-freedom number of a cantilever beam based on the number of dominating acceleration frequencies of the host structure, simulating vibration of the cantilever beam across a plurality of parameters, determining values of the plurality of parameters that result in a match between resonant frequencies of the cantilever beam and the dominating acceleration frequencies of the host structure, and outputting a proposed design of the cantilever beam including the values of the plurality of parameters.

Abstract: A semiconductor structures and a method for forming the same are provided. The semiconductor structure includes first nanostructures and second nanostructures spaced apart from the first nanostructures in a first direction. A left-most point of the first nanostructures and a left-most point of the second nanostructures has a first distance in the first direction. The semiconductor structure further includes first source/drain features attached to opposite sides of the first nanostructures in a second direction being orthogonal to the first direction and third nanostructures and fourth nanostructures spaced apart from the third nanostructures in the first direction. A left-most point of the third nanostructures and a left-most point of the fourth nanostructures has a second distance in the first direction. In addition, the third nanostructures are wider than the first nanostructures in the first direction, and the first distance is smaller than the second distance.

Abstract: Techniques for snapshot classification involve generating a plurality of snapshots of a storage system at multiple times; clustering the plurality of snapshots into a first group of snapshots and a second group of snapshots based on data features of the plurality of snapshots; and determining a clean snapshot among the plurality of snapshots based on a comparison between the generation time of the first group of snapshots and the generation time of the second group of snapshots. Accordingly, a clean snapshot and a damaged snapshot can be automatically and quickly distinguished, thereby improving the efficiency of finding a clean snapshot and helping a user recover data quickly.

Abstract: The present disclosure provides an information communication method, an apparatus and a communications device. The method of the present disclosure includes: obtaining target policy information; sending the target policy information to a second communications device, where the target policy information includes at least one of the following: a reliability index for indicating a success probability of data transmission; a bandwidth index for indicating a system bandwidth; or a spectral efficiency index for indicating a spectral efficiency.

Abstract: A resonator includes a resonance layer, a substrate, and a barrier layer. The barrier layer is located on the substrate, and the barrier layer and the substrate form a cavity. The cavity is configured to accommodate the resonance layer. The barrier layer includes a top wall and a side wall, and an inner surface of the side wall surrounds the resonance layer. An outer surface of the side wall includes a groove, and the groove surrounds the side wall.

Abstract: A method and apparatus for sending subscriber identifiers are disclosed. The method includes: receiving information of a USIM card from a UICC in a cloud card pool over a first communication connection; receiving an identity request from a 5G SA network, wherein the identity request is for requesting acquiring a SUCI; acquiring the SUCI based on the identity request and the information of the USIM card; and sending the SUCI to the 5G SA network, wherein the SUCI is for establishing a second communication connection. The SUCI may be generated at the ME or at the UICC. The first communication connection may be a roaming communication connection and the second communication connection may be a non-roaming communication connection.

Abstract: The present application discloses an inertial sensor comprising a proof mass, an anchor, a flexible member and several sensing electrodes. The anchor is positioned on one side of the sensing, mass block in a first axis. The flexible member is connected to the anchor point and extends along the first axis towards the proof mass to connect the proof mass, in which the several sensing electrodes are provided. In this way, the present application can effectively solve the problems of high difficulty in the production and assembly of inertial sensors and poor product reliability thereof.

Abstract: A processor may automatically generate one or more transcripts based on a media context. The processor may append at least one of the one or more transcripts to the media. The processor may modify the at least one of the one or more transcripts based on an adjustment to a weight factor.

Abstract: A semiconductor device includes a substrate and a semiconductor structure over the substrate. The semiconductor device also includes a first dielectric structure over the substrate, and the first dielectric structure has a first height. The semiconductor device further includes a second dielectric structure over the substrate, and the second dielectric structure has a second height. The second height is smaller than the first height. In addition, the semiconductor device includes a first gate stack wrapped around the first dielectric structure, and the semiconductor structure and the second dielectric structure are spaced apart from the first gate stack. The semiconductor device includes a second gate stack wrapped around the second dielectric structure and the semiconductor structure, and the second gate stack is electrically isolated from the first gate stack.

Abstract: This application provides a sidelink resource configuration method and apparatus. The method includes: configuring, by a network device, sidelink bandwidth part (SL BWP) configuration information for a terminal device, where the SL BWP configuration information is used to indicate a common first parameter of M resource pools in the SL BWP; and configuring, by the terminal device, the M resource pools in the SL BWP based on the SL BWP configuration information in a process of configuring the resource pools in the SL BWP, where the M resource pools have at least one same parameter, and the at least one parameter is determined based on the first parameter. Therefore, communication between different terminal devices can be implemented by configuring the resource pools in the SL BWP.

Abstract: The present invention relates to the technical field of fault location of distributed energy resources connected flexible DC distribution network, and disclosed a fault location method, system and application of bipolar short-circuit of two-level VSC-type photovoltaic-connected flexible DC distribution network, wherein, directions of positive currents of DC feeders during fault are used to locate a fault section; a bipolar short-circuit distance measurement model covering interactions and responses of systems is established according to equivalent circuits of transient periods; and fault location is done by obtaining a distance to fault with electric parameters and information of the fault.

Abstract: A method of forming a semiconductor transistor device. The method comprises forming a channel structure over a substrate and forming a first source/drain structure and a second source/drain structure on opposite sides of the fin structure. The method further comprises forming a gate structure surrounding the fin structure. The method further comprises flipping and partially removing the substrate to form a back-side capping trench while leaving a lower portion of the substrate along upper sidewalls of the first source/drain structure and the second source/drain structure as a protective spacer. The method further comprises forming a back-side dielectric cap in the back-side capping trench.

Abstract: The present disclosure provides a composition comprising a compound of formula (I) or a physiologically acceptable salt thereof, in which the compound of formula (I) or a physiologically acceptable salt thereof has a HPLC purity of ?90%; wherein R1, R2, X and n are as defined herein. The present disclosure further provides use of the composition according to the present disclosure for preparing and/or purifying a composition comprising a salt of the compound of formula (I), and a method for treating a disease caused by a Coronavirus which comprises administering the composition of the present disclosure to a subject. The composition of the present disclosure comprises the compound of formula (I) with high purity, and has good fluidity and anti-caking property; moreover, the claimed composition comprising the compound of formula (I)) with high purity is more suitable for preparing a composition comprising a salt of the compound of formula (I) with higher purity.

Abstract: The present disclosure provides a soft ground cleaning vehicle, including a main body frame; wherein each of both sides of the main body frame is arranged with a screw propulsion mechanism, and a lower portion of each of the both sides of the main body frame is arranged with a bottom frame; a power assembly is arranged on the bottom frame, and an extension frame is arranged on a lower portion of the bottom frame; the extension frame is arranged with a rotation assembly; a plastic track is arranged on the power assembly and the rotation assembly; a plurality of stand plates are arranged on an outer strip surface of the plastic track.

Abstract: A leak check is performed on a semiconductor wafer processing tool that includes a process chamber and process gas lines, and a semiconductor wafer is processed using the semiconductor wafer processing tool if the leak check passes. Each gas line includes a mass flow controller (MFC) and normally closed valves including an upstream and downstream valves upstream and downstream of the MFC. Leak checking includes: leak checking up to the downstream valves of the gas lines with the upstream valves closed and the downstream valves of the gas lines closed; and leak checking up to the upstream valve of each the process gas line with the upstream valves of the of the process gas lines closed and with the downstream valve of the of the process gas line being leak checked open and the downstream valve of every other process gas line closed.

Abstract: A method for testing burning performance of a dark-colored cigarette using a dark-colored cigarette paper is provided. The dark-colored cigarette paper has a grayscale less than 255. The method includes: simulating, by a robotic arm, a cigarette smoking process and environment; acquiring, by a full-vision camera system, an image of a burn line and ash column region of the dark-colored cigarette; and analyzing a burning performance indicator of the dark-colored cigarette according to coordinate information of the burn line and ash column region. The method is based on a surface reflection characteristic of the dark-colored cigarette paper and a principle of optical reflection to light and highlight an edge of the dark-colored cigarette sample by a light source at a certain angle from a side. In this way, the method forms a chromatic aberration to localize the dark-colored cigarette sample, thereby testing the burning performance of the dark-colored cigarette sample.