Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary method comprises forming a first stack structure and a second stack structure in a first area over a substrate, wherein each of the stack structures includes semiconductor layers separated and stacked up; depositing a first interfacial layer around each of the semiconductor layers of the stack structures; depositing a gate dielectric layer around the first interfacial layer; forming a dipole oxide layer around the gate dielectric layer; removing the dipole oxide layer around the gate dielectric layer of the second stack structure; performing an annealing process to form a dipole gate dielectric layer for the first stack structure and a non-dipole gate dielectric layer for the second stack structure; and depositing a first gate electrode around the dipole gate dielectric layer of the first stack structure and the non-dipole gate dielectric layer of the second stack structure.

Abstract: A tool posture control device includes a plurality of airbags, a gas supply module and a controller. A tool is allowed to be disposed among the airbags. A gas supply module connects the airbags. The controller is electrically connected to the gas supply module and configured to control the gas supply module to provide a plurality of gas to the airbags respectively according to a target bending angle value of the tool.

Abstract: A semiconductor structure includes a stack of semiconductor layers disposed over a substrate, a metal gate structure disposed over and interleaved with the stack of semiconductor layers, the metal gate structure including a gate electrode disposed over a gate dielectric layer, a first isolation structure disposed adjacent to a first sidewall of the stack of semiconductor layers, where the gate dielectric layer fills space between the first isolation structure and the first sidewall of the stack of semiconductor layers, and a second isolation structure disposed adjacent to a second sidewall of the stack of semiconductor layers, where the gate electrode fills the space between the second isolation structure and the second sidewall of the stack of semiconductor layers.

Abstract: A well-killing system for ultra-deep well drilling with co-existence of overflow and lost circulation is provided. An upper part of a wellhead blowout preventer is connected to a first mud pump and a lost circulation material mud tank through a pipeline, a first three-way control valve, and a second three-way control valve. A lower port of the second three-way control valve is connected to a second mud pump and a mud pit. A lower port of the first three-way control valve is connected to a first well-killing fluid tank and a second well-killing fluid tank. A gas-liquid separation tank is connected to a side of a wellhead device. A first pressure sensor and a first flowmeter are provided on a left port of the first three-way control valve. A second pressure sensor and a second flowmeter are provided at a left port of a third three-way control valve.

Abstract: A contactor and a control method thereof are disclosed, the contactor including: an electromagnetic component; a static contact; a movable component including a connected movable contact, a first elastic part configured to generate an elastic force supporting the movable component and a driving part configured to produce an electromagnetic driving force through a magnetic field generated by the electromagnetic component; a sensor; and a controller configured to: in response to the sensor detecting that the driving part is displaced based on the electric repulsion force generated by the current flowing through the movable contact and the static contact, control the electromagnetic component to adjust the generated magnetic field to reduce the electromagnetic driving force produced by the driving part based on the generated magnetic field in the opposite direction to the electric repulsion force, so that the movable contact is not closed with the static contact again.

Abstract: An electronic device includes a transceiver configured to transmit and receive ultrawide band (UWB) radar signals. The electronic device also includes a processor operatively coupled to the transceiver. The processor is configured to, based on the received UWB radar signals, detect a human within a detection area of the transceiver. The processor is further configured to perform, based on the detection of the human within the detection area of the transceiver, a motion detection operation, and perform, based on a result of the motion detection operation, a fall detection operation.

Abstract: A semiconductor package includes a photonic integrated circuit (PIC) die having a photonic layer, and an electronic integrated circuit (EIC) die bonded to the PIC die. The EIC die includes an optical region that allows the transmission of optical signals through the optical region towards the photonic layer, and a peripheral region outside of the optical region. The optical region includes optical concave/convex structures, a protection film and optically transparent material layers. The optical concave/convex structures are formed in the semiconductor structure. The protection film is conformally disposed over the optical concave/convex structures. The optically transparent material layers are disposed over the protection film and filling up the optical region. The peripheral region includes first bonding pads bonded to the photonic integrated circuit die, and via structures connected to the first bonding pads, wherein the protection film is laterally surrounding sidewalls of the via structures.

Abstract: A package structure includes a plurality of semiconductor die, an insulating encapsulant and a redistribution layer. Each of the plurality of semiconductor dies includes a semiconductor substrate, conductive pads disposed on the semiconductor substrate, conductive posts disposed on the conductive pads, and at least one alignment mark located on the semiconductor substrate. The insulating encapsulant is encapsulating the plurality of semiconductor dies. The redistribution layer is disposed on the insulating encapsulant and electrically connected to the plurality of semiconductor dies.

Abstract: The present disclosure provides an underwater detection method for contact leakage of a tunnel joint of a dam culvert, including: obtaining an underwater image sequence of the culvert by an underwater robot; preprocessing and registering the underwater image sequence; extracting particle information appearing in the underwater image sequence based on the registered underwater image sequence; constructing a three-dimensional fluid velocity distribution map based on the particle information, and determining leakage situation according to the three-dimensional fluid velocity distribution map; and superimposing the three-dimensional fluid velocity distribution map on a preconfigured three-dimensional culvert model, and rendering and displaying it.

Abstract: Disclosed in the present application are a display apparatus and a processing method. According to the method, a data stream from the external device in connection with the display apparatus is received; a device information frame in the data stream is obtained, where the device information frame is a data frame generated by the external device according to a basic transmission protocol between the external device and the display apparatus; marker bits in the device information frame are traversed; in response to the external device supporting the automatic control protocol, a play mode is switched according to usage scenario information added in the data stream; and in response to the external device not supporting the automatic control protocol, a play mode is switched according to a device type of the external device.

Abstract: This application provides techniques for establishing a P2P connection. The techniques comprise communicating with at least two auxiliary nodes to obtain answer messages returned by the at least two auxiliary nodes; determining, based on the answer messages, at least one public network address corresponding to an internal network address of a first client device; registering, with a cloud server, the at least one public network address corresponding to the internal network address of the first client device, and monitoring the at least one public network address corresponding to the internal network address of the first client device; and establishing a P2P connection to a second client device when detecting, in a preset duration, that the second client device returns a response data packet to a target public network address.

Abstract: The present disclosure provides a method of forming N-type and P-type source/drain features using one patterned mask and one self-aligned mask to increase windows of error tolerance and provide flexibilities for source/drain features of various shapes and/or volumes. The present disclosure also includes forming a trench between neighboring source/drain features to remove bridging between the neighboring source/drain features. In some embodiments, the trenches between the source/drain features are formed by etching from the backside of the substrate.

Abstract: Self-aligned gate cutting techniques are disclosed herein that provide dielectric gate isolation fins for isolating gates of multigate devices from one another. An exemplary device includes a first multigate device having first source/drain features and a first metal gate that surrounds a first channel layer and a second multigate device having second source/drain features and a second metal gate that surrounds a second channel layer. A dielectric gate isolation fin separates the first metal gate from the second metal gate. The dielectric gate isolation fin includes a first dielectric layer having a first dielectric constant and a second dielectric layer having a second dielectric constant disposed over the first dielectric layer. The second dielectric constant is greater than the first dielectric constant. The first metal gate and the second metal gate physically contact the first channel layer and the second channel layer, respectively, and the dielectric gate isolation fin.

Abstract: A semiconductor structure includes a source/drain (S/D) region, one or more dielectric layers over the S/D region, one or more semiconductor channel layers connected to the S/D region, an isolation structure under the S/D region and the one or more semiconductor channel layers, and a via under the S/D region and electrically connected to the S/D region. A lower portion of the via is surrounded by the isolation structure and an upper portion of the via extends vertically between the S/D region and the isolation structure.

Abstract: A semiconductor device includes a substrate. The semiconductor device includes a dielectric layer disposed over a portion of the substrate. The semiconductor device includes a diffusion blocking layer disposed over the dielectric layer. The diffusion blocking layer and the dielectric layer have different material compositions. The semiconductor device includes a ferroelectric layer disposed over the diffusion blocking layer.

Abstract: The present disclosure provides a method and apparatus for displaying an interactive message for an application, and a readable storage medium. and the method includes: displaying content corresponding to a content viewing operation for a user through a display interface of an application APP when the content viewing operation input by the user is received; displaying an interactive message in a preset region of the display interface when the interactive message is received; and displaying a reply box of the interactive message on the display interface to receive a reply message for the interactive message when a first vertical sliding trigger operation for the preset region is acquired.

Abstract: A method, device, computing equipment, and storage medium for predicting the drift of the floating object are provided. A method for predicting drift velocity includes: obtaining environmental characteristic parameters at the location of the floating object to be predicted, wherein the environmental characteristic parameters include wave characteristic parameters; inputting the wave characteristic parameters into a deep learning model for wave-induced drift velocity to obtain the wave-induced drift velocity; wherein the deep learning model for wave-induced drift velocity is trained based on first sample drift data, wherein the first sample drift data includes observed drift velocity of sample floating objects, corresponding sample water surface flow characteristic parameters, sample wind characteristic parameters, and sample wave characteristic parameters.

Abstract: A connecting device used for electrically connecting a power source with a power consuming module is provided. The connecting device includes a female connecting base and a male connecting base. The female connecting base has two opposite surfaces, a rim disposed on one of the surfaces and two terminals exposed on the surfaces. The terminals are connected to the live wire and neutral wire of the power source separately. The male connecting base includes a clamp, two conductive strips, and a ground strip. The rim is clamped, and the male connecting base is fastened to the female connecting base by the clamp. The terminals are connected to the conductive strips, while the end surface of each conductive strip protrudes from the surface of the male connecting base. The ground strip includes a ground surface which protrudes from the end surfaces of the conductive strips.

Abstract: A method includes forming semiconductive sheets over a substrate and arranged in a vertical direction; forming source/drain regions on either side of each of the semiconductive sheets; forming first air gap inner spacers interleaving with the semiconductive sheets; forming a gate around each of the semiconductive sheets, wherein the first air gap inner spacers are laterally between the gate and a first one of the source/drain regions.

Abstract: An electronic device may be provided with an antenna module having a substrate. An antenna may be disposed on the substrate. The antenna may have a directly fed patch and parasitic patches. The antenna may be fed by a feed via. The parasitic patches may include a first layer of parasitic patches separated by a gap overlapping the directly fed patch. The parasitic patches may include an additional parasitic patch formed in a second layer. The additional parasitic patch may overlap the gap. A floating ground via may couple a center of the additional parasitic patch and a center of the directly fed patch to a landing pad in a ground layer. The landing pad may short the via to the ground layer at the radiating frequency of the antenna. The landing pad may be electrically floating at DC frequencies.